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1. 发明授权

US07468290B2 Mechanical enhancement of dense and porous organosilicate materials by UV exposure 有权
标题翻译：通过紫外线曝光机械增强致密和多孔有机硅酸盐材料
公开(公告)号：US07468290B2
公开(公告)日：2008-12-23
申请号：US10624357
申请日：2003-07-21
申请人： Aaron Scott Lukas , Mark Leonard O'Neill , Jean Louise Vincent , Raymond Nicholas Vrtis , Mark Daniel Bitner , Eugene Joseph Karwacki, Jr.
发明人： Aaron Scott Lukas , Mark Leonard O'Neill , Jean Louise Vincent , Raymond Nicholas Vrtis , Mark Daniel Bitner , Eugene Joseph Karwacki, Jr.
IPC分类号： H01L51/40
CPC分类号： H01L21/02126 , C23C16/401 , C23C16/56 , H01L21/02203 , H01L21/02274 , H01L21/02348 , H01L21/3105 , H01L21/31695
摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.
摘要翻译：当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。在本发明的一个方面，将有机硅酸盐玻璃膜暴露于紫外光源，其中曝光后的膜与其相比具有至少10％或更大的机械性能（即，材料硬度和弹性模量）的改善沉积膜。

2. 发明申请

US20090054674A1 Mechanical Enhancement of Dense and Porous Organosilicate Materials by UV Exposure 有权
标题翻译：通过紫外线曝光对密集和多孔有机硅酸盐材料的机械增强
公开(公告)号：US20090054674A1
公开(公告)日：2009-02-26
申请号：US12262879
申请日：2008-10-31
申请人： Aaron Scott Lukas , Mark Leonard O'Neill , Jean Louise Vincent , Raymond Nicholas Vrtis , Mark Daniel Bitner , Eugene Joseph Karwacki, JR.
发明人： Aaron Scott Lukas , Mark Leonard O'Neill , Jean Louise Vincent , Raymond Nicholas Vrtis , Mark Daniel Bitner , Eugene Joseph Karwacki, JR.
IPC分类号： C07F7/18 , C23C16/56
CPC分类号： H01L21/02126 , C23C16/401 , C23C16/56 , H01L21/02203 , H01L21/02274 , H01L21/02348 , H01L21/3105 , H01L21/31695
摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.
摘要翻译：当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。在本发明的一个方面，将有机硅酸盐玻璃膜暴露于紫外光源，其中曝光后的膜与其相比具有至少10％或更大的机械性能（即，材料硬度和弹性模量）的改善沉积膜。

3. 发明授权

US07404990B2 Non-thermal process for forming porous low dielectric constant films 有权
标题翻译：用于形成多孔低介电常数膜的非热处理
公开(公告)号：US07404990B2
公开(公告)日：2008-07-29
申请号：US10295568
申请日：2002-11-14
申请人： Aaron Scott Lukas , Mark Leonard O'Neill , Mark Daniel Bitner , Jean Louise Vincent , Raymond Nicholas Vrtis , Eugene Joseph Karwacki, Jr.
发明人： Aaron Scott Lukas , Mark Leonard O'Neill , Mark Daniel Bitner , Jean Louise Vincent , Raymond Nicholas Vrtis , Eugene Joseph Karwacki, Jr.
IPC分类号： B05D3/06 , C08F2/34 , C08F2/52 , C08J7/18 , C08J7/16 , C23C16/00 , C23C16/50 , C23C16/56
CPC分类号： C23C16/56 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/31695
摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming phase within a multiphasic film thereby forming a porous film. The pore-forming phase may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.
摘要翻译：当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。在本发明的某些实施方案中，提供了一种低温方法，以除去多相膜内至少一部分成孔相，从而形成多孔膜。可以在非氧化性气氛中通过暴露于至少一种能量源（优选紫外光源）除去成孔相。

4. 发明授权

US07932188B2 Mechanical enhancement of dense and porous organosilicate materials by UV exposure 有权
标题翻译：通过紫外线曝光机械增强致密和多孔有机硅酸盐材料
公开(公告)号：US07932188B2
公开(公告)日：2011-04-26
申请号：US12262879
申请日：2008-10-31
申请人： Aaron Scott Lukas , Mark Leonard O'Neill , Jean Louise Vincent , Raymond Nicholas Vrtis , Mark Daniel Bitner , Eugene Joseph Karwacki, Jr.
发明人： Aaron Scott Lukas , Mark Leonard O'Neill , Jean Louise Vincent , Raymond Nicholas Vrtis , Mark Daniel Bitner , Eugene Joseph Karwacki, Jr.
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , C23C16/401 , C23C16/56 , H01L21/02203 , H01L21/02274 , H01L21/02348 , H01L21/3105 , H01L21/31695
摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.
摘要翻译：当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。在本发明的一个方面，将有机硅酸盐玻璃膜暴露于紫外光源，其中曝光后的膜与其相比具有至少10％或更大的机械性能（即，材料硬度和弹性模量）的改善沉积膜。

5. 发明授权

US07470454B2 Non-thermal process for forming porous low dielectric constant films 有权
标题翻译：用于形成多孔低介电常数膜的非热处理
公开(公告)号：US07470454B2
公开(公告)日：2008-12-30
申请号：US10624356
申请日：2003-07-21
申请人： Aaron Scott Lukas , Mark Leonard O'Neill , Mark Daniel Bitner , Jean Louise Vincent , Raymond Nicholas Vrtis , Eugene Joseph Karwacki, Jr.
发明人： Aaron Scott Lukas , Mark Leonard O'Neill , Mark Daniel Bitner , Jean Louise Vincent , Raymond Nicholas Vrtis , Eugene Joseph Karwacki, Jr.
IPC分类号： B05D5/00 , B05D3/06 , B05D3/02 , C23C16/18 , C23C16/40 , C23C16/42 , C23C16/48 , C23C16/517 , C23C16/56 , C08J7/16 , H01L21/3105 , H01L21/4757
CPC分类号： C23C16/56 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/31695
摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming material within a composite film thereby forming a porous film. The pore-forming material may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.
摘要翻译：当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。在本发明的某些实施方案中，提供了一种低温方法，以去除复合膜内至少一部分成孔材料，从而形成多孔膜。成孔材料可以在非氧化性气氛中暴露于至少一种能量源，优选紫外光源下去除。

6. 发明授权

US07332445B2 Porous low dielectric constant compositions and methods for making and using same 有权
标题翻译：多孔低介电常数组合物及其制备和使用方法
公开(公告)号：US07332445B2
公开(公告)日：2008-02-19
申请号：US11228223
申请日：2005-09-19
申请人： Aaron Scott Lukas , Mark Leonard O'Neill , Eugene Joseph Karwacki, Jr. , Raymond Nicholas Vrtis , Jean Louise Vincent
发明人： Aaron Scott Lukas , Mark Leonard O'Neill , Eugene Joseph Karwacki, Jr. , Raymond Nicholas Vrtis , Jean Louise Vincent
IPC分类号： H01L21/31
CPC分类号： C03C3/045 , C23C16/30 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02274 , H01L21/02348 , H01L21/3105 , H01L21/3122 , H01L21/31695 , Y10T428/31663
摘要： A porous organosilicate glass (OSG) film: SivOwCxHyFz, where v+w+x+y+z=100%, v is 10 to 35 atomic %, w is 10 to 65 atomic %, x is 5 to 30 atomic %, y is 10 to 50 atomic % and z is 0 to 15 atomic %, has a silicate network with carbon bonds as methyl groups (Si—CH3) and contains pores with diameter less than 3 nm equivalent spherical diameter and dielectric constant less than 2.7. A preliminary film is deposited by a chemical vapor deposition method from organosilane and/or organosiloxane precursors, and independent pore-forming precursors. Porogen precursors form pores within the preliminary film and are subsequently removed to provide the porous film. Compositions, film forming kits, include organosilane and/or organosiloxane compounds containing at least one Si—H bond and porogen precursors of hydrocarbons containing alcohol, ether, carbonyl, carboxylic acid, ester, nitro, primary amine, secondary amine, and/or tertiary amine functionality or combinations.
摘要翻译：多孔有机硅酸盐玻璃（OSG）膜：其中，X，Y，X，Y，其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜65原子％，x为5〜30原子％，y为10〜 z为0〜15原子％，具有作为甲基（Si-CH 3 3）的碳原子的硅酸盐网络，并且含有直径小于3nm的等效球径，介电常数小于2.7的孔。通过化学气相沉积法从有机硅烷和/或有机硅氧烷前体和独立的成孔前体沉积初步膜。致孔剂前体在预备膜内形成孔，随后被除去以提供多孔膜。组合物，成膜试剂盒包括含有至少一个Si-H键的有机硅烷和/或有机硅氧烷化合物，以及含有醇，醚，羰基，羧酸，酯，硝基，伯胺，仲胺和/或叔碳原子的烃的致孔剂前体胺官能团或组合。

7. 发明授权

US08399349B2 Materials and methods of forming controlled void 有权
标题翻译：形成受控空隙的材料和方法
公开(公告)号：US08399349B2
公开(公告)日：2013-03-19
申请号：US11693707
申请日：2007-03-29
申请人： Raymond Nicholas Vrtis , Dingjun Wu , Mark Leonard O'Neill , Mark Daniel Bitner , Jean Louise Vincent , Eugene Joseph Karwacki, Jr. , Aaron Scott Lukas
发明人： Raymond Nicholas Vrtis , Dingjun Wu , Mark Leonard O'Neill , Mark Daniel Bitner , Jean Louise Vincent , Eugene Joseph Karwacki, Jr. , Aaron Scott Lukas
IPC分类号： H01L21/4763
CPC分类号： H01L21/764 , H01L21/02115 , H01L21/02126 , H01L21/02172 , H01L21/02203 , H01L21/02205 , H01L21/02263 , H01L21/02274 , H01L21/02282 , H01L21/30604 , H01L21/31695 , H01L21/423 , H01L21/7682 , H01L2221/1047
摘要： The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removale of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.
摘要翻译：本发明是一种在衬底内形成气隙的方法，该方法包括：提供衬底; 通过沉积至少一种牺牲材料前体沉积牺牲材料; 沉积复合层; 去除复合层中的致孔剂材料以形成多孔层并使分层的基底与去除介质接触，以基本上去除牺牲材料并在基底内提供气隙; 其中所述至少一种牺牲材料前体选自：有机致孔剂; 硅和极性溶剂可溶性金属氧化物及其混合物。

8. 发明授权

US07098149B2 Mechanical enhancement of dense and porous organosilicate materials by UV exposure 有权
标题翻译：通过紫外线曝光机械增强致密和多孔有机硅酸盐材料
公开(公告)号：US07098149B2
公开(公告)日：2006-08-29
申请号：US10379466
申请日：2003-03-04
申请人： Aaron Scott Lukas , Mark Leonard O'Neill , Jean Louise Vincent , Raymond Nicholas Vrtis , Mark Daniel Bitner , Eugene Joseph Karwacki, Jr.
发明人： Aaron Scott Lukas , Mark Leonard O'Neill , Jean Louise Vincent , Raymond Nicholas Vrtis , Mark Daniel Bitner , Eugene Joseph Karwacki, Jr.
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , C23C16/401 , C23C16/56 , H01L21/02203 , H01L21/02274 , H01L21/02348 , H01L21/3105 , H01L21/31695
摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.
摘要翻译：当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。在本发明的一个方面，将有机硅酸盐玻璃膜暴露于紫外光源，其中曝光后的膜与其相比具有至少10％或更大的机械性能（即，材料硬度和弹性模量）的改善沉积膜。

9. 发明申请

US20110143032A1 Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films With Low Dielectric Constants 有权
标题翻译： Porogen，Porogenated前体及其使用方法提供具有低介电常数的多孔有机硅玻璃膜
公开(公告)号：US20110143032A1
公开(公告)日：2011-06-16
申请号：US13031387
申请日：2011-02-21
申请人： Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Manchao Xiao , John Anthony Thomas Norman
发明人： Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Manchao Xiao , John Anthony Thomas Norman
IPC分类号： C23C16/44 , C09D7/12
CPC分类号： C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02274
摘要： A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.
摘要翻译：多孔有机硅玻璃（OSG）膜由式SivOwCxHyFz表示的材料的单相组成，其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜 65原子％，x为5〜30原子％，y为10〜50原子％，z为0〜15原子％，其中，膜的孔隙和介电常数小于2.6。该薄膜通过化学气相沉积方法提供，其中预备薄膜由有机硅烷和/或有机硅氧烷前体和成孔剂（致孔剂）沉积，其可以与前体无关或与之结合。随后除去致孔剂以提供多孔膜。用于形成膜的组合物，例如试剂盒包括致孔剂和前体。致孔前体也可用于提供薄膜。

10. 发明授权

US08293001B2 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants 有权
标题翻译：孔原子，孔隙前体和使用它们的方法提供具有低介电常数的多孔有机硅玻璃膜
公开(公告)号：US08293001B2
公开(公告)日：2012-10-23
申请号：US13031387
申请日：2011-02-21
申请人： Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Manchao Xiao , John Anthony Thomas Norman
发明人： Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Manchao Xiao , John Anthony Thomas Norman
IPC分类号： C09D7/12
CPC分类号： C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02274
摘要： A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens) wherein the precursor is a compound of the formula R1n(OR2)p(O(O)CR4)3−n−pSi—R7—SiR3m(O(O)CR5)q(OR6)3−m−q where R1 and R3 are independently H or C1 to C4 linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated hydrocarbon; R2, R8 and R7 are independently C1 to C6 linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated hydrocarbon, R4 and Rs are independently H, C1 to C6 linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated hydrocarbon, n is 0 to 3, m is 0 to 3, q is 0 to 3 and p is 0 to 3, provided that n+m>1, n+p 3, and m+q 3, wherein the porogen is selected from the group consisting of norbornadiene, alpha-terpinene, limonene, cyclooctane, and cymene. The porogens are subsequently removed to provide the porous film.
摘要翻译：多孔有机硅玻璃（OSG）膜由式SivOwCxHyFz表示的材料的单相组成，其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜 65原子％，x为5〜30原子％，y为10〜50原子％，z为0〜15原子％，其中，膜的孔隙和介电常数小于2.6。该薄膜由化学气相沉积方法提供，其中预备薄膜由有机硅烷和/或有机硅氧烷前体和成孔剂（致孔剂）沉积，其中前体是式R1n（OR2）p（O（O））CR 4）3-n-pSi-R 7 -SiR 3 m（O（O）CR 5）q（OR 6）3-m-q其中R 1和R 3独立地为H或C 1至C 4直链或支链，饱和，单或多不饱和，环状，部分或完全氟化的烃; R2，R8和R7独立为C1至C6直链或支链，饱和，单或多不饱和，环状，芳族，部分或全部是氟化的烃，R4和R5独立地为H，C1至C6直链或支链，饱和，单或多不饱和的，环状的，芳族的，部分或完全氟化的烃，n为0至3，m为0至3，q为0至3，p为0至3，条件是n + m> 1，n + p 3和 m + q 3，其中致孔剂选自降冰片二烯，α-萜品烯，柠檬烯，环辛烷和伞花烃。随后除去致孔剂以提供多孔膜。

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