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1. 发明申请

US20230016664A1 METROLOGY METHOD, TARGET AND SUBSTRATE 有权
公开(公告)号：US20230016664A1
公开(公告)日：2023-01-19
申请号：US17873406
申请日：2022-07-26
申请人： ASML NETHERLANDS B.V.
发明人： Kaustuve BHATTACHARYYA , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
IPC分类号： G01B11/14 , G03F7/20
摘要： A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

2. 发明授权

US11428521B2 Metrology method, target and substrate 有权
公开(公告)号：US11428521B2
公开(公告)日：2022-08-30
申请号：US17519641
申请日：2021-11-05
申请人： ASML NETHERLANDS B.V.
发明人： Kaustuve Bhattacharyya , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
IPC分类号： G01B11/14 , G03F7/20
摘要： A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

3. 发明授权

US09786044B2 Method of measuring asymmetry, inspection apparatus, lithographic system and device manufacturing method 有权
公开(公告)号：US09786044B2
公开(公告)日：2017-10-10
申请号：US14971887
申请日：2015-12-16
申请人： ASML NETHERLANDS B.V.
发明人： Andreas Fuchs , Peter Hanzen Wardenier , Amandev Singh , Maxime D'Alfonso , Hilko Dirk Bos
IPC分类号： G06K9/00 , G06T7/00 , G03F7/20 , G06T7/11
CPC分类号： G06T7/0004 , G03F7/70633 , G03F7/70941 , G06T7/11 , G06T2207/30148
摘要： A scatterometer is used in a dark-field imaging mode to measure asymmetry-related parameters such as overlay. Measurements of small grating targets are made using identical optical paths, with the target in two orientations to obtain separate measurements of +1 and −1 diffraction orders. In this way, intensity scaling differences (tool asymmetry) are avoided. However, additive intensity defects due to stray radiation (ghosts) in the optical system cannot be avoided. Additive intensity issues strongly depend on the ratio between 0th and 1st order diffraction and are therefore strongly substrate (process) dependent. Calibration measurements are made on a few representative target gratings having biases. The calibration measurements are made, using not only different substrate rotations but also complementary apertures. Corrections are calculated and applied to correct asymmetry, to reduce error caused by stray radiation.

4. 发明授权

US09594311B2 Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method 有权
公开(公告)号：US09594311B2
公开(公告)日：2017-03-14
申请号：US14335711
申请日：2014-07-18
申请人： ASML Netherlands B.V.
发明人： Marcus Adrianus Van De Kerkhof , Maurits Van Der Schaar , Andreas Fuchs , Martyn John Coogans
IPC分类号： G03B27/54 , G03F7/20 , G01N21/47 , G01N21/95 , G01N21/956 , G03F9/00
CPC分类号： G03F7/7065 , G01N21/47 , G01N21/4788 , G01N21/9501 , G01N21/956 , G03F7/70633 , G03F9/7049 , G03F9/7088
摘要： The present invention makes the use of measurement of a diffraction spectrum in or near an image plane in order to determine a property of an exposed substrate. In particular, the positive and negative first diffraction orders are separated or diverged, detected and their intensity measured. The intensity of each of the first diffraction orders from the diffraction spectrum are compared to determine overlay (or other properties) of exposed layers on the substrate.

5. 发明授权

US09594310B2 Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method 有权
标题翻译：检测方法和装置，光刻设备，光刻处理单元和器件制造方法
公开(公告)号：US09594310B2
公开(公告)日：2017-03-14
申请号：US14335702
申请日：2014-07-18
申请人： ASML Netherlands B.V.
发明人： Marcus Adrianus Van De Kerkhof , Maurits Van Der Schaar , Andreas Fuchs , Martyn John Coogans
IPC分类号： G03B27/54 , G03F7/20 , G01N21/47 , G01N21/95 , G01N21/956 , G03F9/00
CPC分类号： G03F7/7065 , G01N21/47 , G01N21/4788 , G01N21/9501 , G01N21/956 , G03F7/70633 , G03F9/7049 , G03F9/7088
摘要： The present invention makes the use of measurement of a diffraction spectrum in or near an image plane in order to determine a property of an exposed substrate. In particular, the positive and negative first diffraction orders are separated or diverged, detected and their intensity measured. The intensity of each of the first diffraction orders from the diffraction spectrum are compared to determine overlay (or other properties) of exposed layers on the substrate.
摘要翻译：本发明使用在图像平面内或附近测量衍射光谱，以便确定曝光的基底的性质。特别地，正和负的第一衍射级被分离或分离，检测并测量它们的强度。比较来自衍射光谱的每个第一衍射级的强度，以确定衬底上的暴露层的覆盖（或其它性质）。

6. 发明授权

US09470986B2 Inspection methods, inspection apparatuses, and lithographic apparatuses 有权
标题翻译：检验方法，检查装置和光刻设备
公开(公告)号：US09470986B2
公开(公告)日：2016-10-18
申请号：US14190036
申请日：2014-02-25
申请人： ASML Netherlands B.V.
发明人： Andreas Fuchs , Maurits Van Der Schaar , Scott Anderson Middlebrooks , Panagiotis Pieter Bintevinos
IPC分类号： G03F7/20 , G01N21/956
CPC分类号： G03F7/70633 , G01N21/956
摘要： A method for determining overlay error includes measuring asymmetry of radiation reflected from each of a plurality of targets on a substrate. The plurality of targets include a predetermined overlay offset. The method also includes comparing the measured asymmetry of the radiation reflected from each of the plurality of targets to the corresponding predetermined overlay offset of the respective target. Additionally, the method includes determining the overlay error of a point on the substrate as a function of measured asymmetry reflected from the point. The function is determined by fitting a polynomial or a Fourier series to a comparison of the measured asymmetry of the radiation reflected from each of the plurality of targets to the corresponding predetermined overlay offset of the respective target. The function limits an effect of linearity error.
摘要翻译：用于确定覆盖误差的方法包括测量从衬底上的多个靶中的每一个反射的辐射的不对称性。多个目标包括预定的覆盖偏移。该方法还包括将从多个目标中的每一个反射的辐射的测量的不对称性与相应目标的对应的预定叠加偏移进行比较。另外，该方法包括根据从该点反射的测量的不对称性来确定衬底上的点的重叠误差。通过将多项式或傅里叶级数拟合到从多个目标中的每一个反射的辐射的测量的不对称与相应目标的对应的预定叠加偏移的比较来确定该功能。该功能限制了线性误差的影响。

7. 发明授权

US10386176B2 Metrology method, target and substrate 有权
公开(公告)号：US10386176B2
公开(公告)日：2019-08-20
申请号：US14835504
申请日：2015-08-25
申请人： ASML NETHERLANDS B.V.
发明人： Kaustuve Bhattacharyya , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
IPC分类号： G01B11/26 , G01B11/14 , G03F7/20
摘要： A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

8. 发明申请

US20160061589A1 METROLOGY METHOD, TARGET AND SUBSTRATE 审中-公开
标题翻译：计量方法，目标和底物
公开(公告)号：US20160061589A1
公开(公告)日：2016-03-03
申请号：US14835504
申请日：2015-08-25
申请人： ASML NETHERLANDS B.V.
发明人： Kaustuve BHATTACHARYYA , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
IPC分类号： G01B11/14
CPC分类号： G01B11/14 , G03F7/70633 , G03F7/70683
摘要： A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
摘要翻译：具有至少第一子目标和至少第二子目标的衍射测量目标，并且其中（1）所述第一和第二子目标各自包括一对周期性结构，并且所述第一子目标具有不同的设计比第二子目标，不同的设计包括具有与第二子目标周期结构不同的间距，特征宽度，空间宽度和/或分割的第一子目标周期性结构，或（2）第一和第二子目标周期结构子目标分别包括第一层中的第一和第二周期性结构，并且第三周期性结构至少部分地位于第一层下面的第二层中的第一周期性结构下方，并且在第二层周期结构之下不存在周期性结构并且第四周期性结构至少部分地位于第二层下面的第三层中的第二周期性结构下方。

9. 发明授权

US10718604B2 Metrology method, target and substrate 有权
公开(公告)号：US10718604B2
公开(公告)日：2020-07-21
申请号：US16507297
申请日：2019-07-10
申请人： ASML NETHERLANDS B.V.
发明人： Kaustuve Bhattacharyya , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
IPC分类号： G01B11/26 , G01B11/14 , G03F7/20
摘要： A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

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