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1. 发明公开

US20240027918A1 METROLOGY METHOD AND APPARATUS AND COMPUTER PROGRAM 审中-公开
公开(公告)号：US20240027918A1
公开(公告)日：2024-01-25
申请号：US18004555
申请日：2021-05-27
申请人： ASML Netherlands B.V.
发明人： Simon Gijsbert Josephus MATHIJSSEN , Patricius Aloysius Jacobus TINNEMANS , Arie Jeffrey DEN BOEF , Kaustuve BHATTACHARYYA , Samee Ur REHMAN
IPC分类号： G03F7/00 , G03F9/00
CPC分类号： G03F7/70633 , G03F9/7046 , G03F9/7042
摘要： Disclosed is a method of improving a measurement of a parameter of interest. The method comprises obtaining metrology data comprising a plurality of measured values of the parameter of interest, relating to one or more targets on a substrate, each measured value relating to a different measurement combination of a target of said one or more targets and a measurement condition used to measure that target and asymmetry metric data relating to asymmetry for said one or more targets. A respective relationship is determined for each of said measurement combinations relating a true value for the parameter of interest to the asymmetry metric data, based on an assumption that there is a common true value for the parameter of interest over said measurement combinations. These relationships are used to improve a measurement of the parameter of interest.

2. 发明申请

US20220057192A1 METROLOGY METHOD, TARGET AND SUBSTRATE 有权
公开(公告)号：US20220057192A1
公开(公告)日：2022-02-24
申请号：US17519641
申请日：2021-11-05
申请人： ASML NETHERLANDS B.V.
发明人： Kaustuve BHATTACHARYYA , Henricus Wilhelmus Maria VAN BUEL , Christophe David FOUQUET , Hendrik Jan Hidde SMILDE , Maurits VAN DER SCHAAR , Arie Jeffrey DEN BOEF , Richard Johannes Franciscus VAN HAREN , Xing Lan LIU , Johannes Marcus Maria BELTMAN , Andreas FUCHS , Omer Abubaker Omer ADAM , Michael KUBIS , Martin Jacobus Johan JAK
IPC分类号： G01B11/14 , G03F7/20
摘要： A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

3. 发明申请

US20190079413A1 Metrology in Lithographic Processes 审中-公开
公开(公告)号：US20190079413A1
公开(公告)日：2019-03-14
申请号：US16106322
申请日：2018-08-21
申请人： ASML Netherlands B.V.
发明人： Simon Gijsbert Josephus MATHIJSSEN , Martin Jacobus Johan JAK , Kaustuve BHATTACHARYYA
IPC分类号： G03F7/20 , G01N21/47
摘要： An apparatus and method for estimating a parameter of a lithographic process and an apparatus and method for determining a relationship between a measure of quality of an estimate of a parameter of a lithographic process are provided. In the apparatus for estimating the parameter a processor is configured to determine a quality of the estimate of the parameter relating to the tested substrate based on a measure of feature asymmetry in the at least first features of the tested substrate and further based on a relationship determined for a plurality of corresponding at least first features of at least one further substrate representative of the tested substrate, the relationship being between a measure of quality of an estimate of the parameter relating to the at least one further substrate and a measure of feature asymmetry in the corresponding first features.

4. 发明申请

US20180314160A1 METHOD AND APPARATUS FOR PREDICTING PERFORMANCE OF A METROLOGY SYSTEM 审中-公开
公开(公告)号：US20180314160A1
公开(公告)日：2018-11-01
申请号：US15771585
申请日：2016-10-07
申请人： ASML NETHERLANDS B.V.
发明人： Martinus Gerardus Maria Johannes MAASSEN , Reinder Teun PLUG , Kaustuve BHATTACHARYYA
IPC分类号： G03F7/20 , G06F17/50
CPC分类号： G03F7/705 , G03F7/70625 , G03F7/70991
摘要： Increasingly, metrology systems are integrated within the lithographic apparatuses, to provide integrated metrology within the lithographic process. However, this integration can result in a throughput or productivity impact of the whole lithographic apparatus which can be difficult to predict. It is therefore proposed to provide a simulation model which is operable to acquire throughput information associated with a throughput of a plurality of substrates within a lithographic apparatus, said throughput information comprising a throughput parameter, predict, using a throughput simulator the throughput using the throughput parameter as an input parameter. The throughput simulator may be calibrated using the acquired throughput information. The impact of at least one change of a throughput parameter on the throughput of the lithographic apparatus may be predicted using the throughput simulator.

5. 发明申请

US20230016664A1 METROLOGY METHOD, TARGET AND SUBSTRATE 有权
公开(公告)号：US20230016664A1
公开(公告)日：2023-01-19
申请号：US17873406
申请日：2022-07-26
申请人： ASML NETHERLANDS B.V.
发明人： Kaustuve BHATTACHARYYA , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
IPC分类号： G01B11/14 , G03F7/20
摘要： A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

6. 发明申请

US20210255553A1 METROLOGY METHOD, PATTERNING DEVICE, APPARATUS AND COMPUTER PROGRAM 有权
公开(公告)号：US20210255553A1
公开(公告)日：2021-08-19
申请号：US17306670
申请日：2021-05-03
申请人： ASML Netherlands B.V.
发明人： Zili ZHOU , Nitesh PANDEY , Olger Victor ZWIER , Patrick WARNAAR , Maurits VAN DER SCHAAR , Elliott Gerard MC NAMARA , Arie Jeffrey DEN BOEF , Paul Christiaan HINNEN , Murat BOZKURT , Joost Jeroen OTTENS , Kaustuve BHATTACHARYYA , Michael KUBIS
IPC分类号： G03F7/20 , G01N21/47 , G01N21/95 , G01N21/956 , G03F9/00
摘要： A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shifht (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.

7. 发明申请

US20190064680A1 MARK POSITION DETERMINATION METHOD 审中-公开
公开(公告)号：US20190064680A1
公开(公告)日：2019-02-28
申请号：US16083076
申请日：2017-02-22
申请人： ASML NETHERLANDS B.V.
发明人： Emil Peter SCHMITT-WEAVER , Amir Bin ISMAIL , Kaustuve BHATTACHARYYA , Paul DERWIN
IPC分类号： G03F7/20
摘要： Corrections are calculated for use in controlling a lithographic apparatus. Using a metrology apparatus a performance parameter is measured at sampling locations across one or more substrates to which a lithographic process has previously been applied. A process model is fitted to the measured performance parameter, and an up-sampled estimate is provided for process-induced effects across the substrate. Corrections are calculated for use in controlling the lithographic apparatus, using an actuation model and based at least in part on the fitted process model. For locations where measurement data is available, this is added to the estimate to replace the process model values. Thus, calculation of actuation corrections is based on a modified estimate which is a combination of values estimated by the process model and partly on real measurement data.

8. 发明申请

US20160370717A1 RECIPE SELECTION BASED ON INTER-RECIPE CONSISTENCY 审中-公开
标题翻译：基于互联网一致性的招标选择
公开(公告)号：US20160370717A1
公开(公告)日：2016-12-22
申请号：US15181126
申请日：2016-06-13
申请人： ASML NETHERLANDS B.V.
发明人： Arie Jeffrey DEN BOEF , Timothy Dugan DAVIS , Peter David ENGBLOM , Kaustuve BHATTACHARYYA
IPC分类号： G03F9/00 , G01B11/27
CPC分类号： G03F9/7069 , G01B11/272 , G03F7/70633
摘要： A method including: determining recipe consistencies between one substrate measurement recipe of a plurality of substrate measurement recipes and each other substrate measurement recipe of the plurality of substrate measurement recipes; calculating a function of the recipe consistencies; eliminating the one substrate measurement recipe from the plurality of substrate measurement recipes if the function meets a criterion; and reiterating the determining, calculating and eliminating until a termination condition is met. Also disclosed herein is a substrate measurement apparatus, including a storage configured to store a plurality of substrate measurement recipes, and a processor configured to select one or more substrate measurement recipes from the plurality of substrate measurement recipes based on recipe consistencies among the plurality of substrate measurement recipes.
摘要翻译：一种方法，包括：确定多个基板测量配方的一个基板测量配方与多个基板测量配方的每个其它基板测量配方之间的配方一致性; 计算配方一致性的功能; 如果功能满足标准，则从多个基板测量配方中消除一个基板测量配方; 并重申确定，计算和消除，直到满足终止条件。本文还公开了一种基板测量装置，其包括被配置为存储多个基板测量配方的存储器，以及配置为基于多个基板中的配方一致性从多个基板测量配方中选择一个或多个基板测量配方的处理器测量食谱。

9. 发明申请

US20130148121A1 Device Manufacturing Method and Associated Lithographic Apparatus, Inspection Apparatus, and Lithographic Processing Cell 有权
标题翻译：装置制造方法及相关平版印刷装置，检验装置及平版印刷加工单元
公开(公告)号：US20130148121A1
公开(公告)日：2013-06-13
申请号：US13687569
申请日：2012-11-28
申请人： ASML Netherlands B.V.
发明人： Arie Jeffrey DEN BOEF , Kaustuve BHATTACHARYYA , Martin Jacobus Johan JAK , Michael KUBIS
IPC分类号： G01B11/00
CPC分类号： G01B11/24 , G01B11/14 , G03F7/70633 , G03F9/7003 , G03F9/7049 , G03F9/7088 , G03F9/7092
摘要： Disclosed is a device manufacturing method, and accompanying inspection and lithographic apparatuses. The method comprises measuring on the substrate a property such as asymmetry of a first overlay marker and measuring on the substrate a property such as asymmetry of an alignment marker. In both cases the asymmetry is determined. The position of the alignment marker on the substrate is then determined using an alignment system and the asymmetry information of the alignment marker and the substrate aligned using this measured position. A second overlay marker is then printed on the substrate; and a lateral overlay measured on the substrate of the second overlay marker with respect to the first overlay marker using the determined asymmetry information of the first overlay marker.
摘要翻译：公开了一种器件制造方法，以及伴随的检查和光刻设备。该方法包括在衬底上测量诸如第一覆盖标记的不对称性和在衬底上测量诸如对准标记的不对称性的特性。在这两种情况下，确定不对称性。然后使用对准系统确定对准标记在衬底上的位置，并使用该测量位置对准对准标记和衬底的不对称信息。然后将第二覆盖标记印刷在基底上; 以及使用所确定的所述第一覆盖标记的不对称信息相对于所述第一覆盖标记在所述第二覆盖标记的基板上测量的横向覆盖。

10. 发明公开

US20240012342A1 METROLOGY METHOD AND ASSOCIATED METROLOGY AND LITHOGRAPHIC APPARATUSES 审中-公开
公开(公告)号：US20240012342A1
公开(公告)日：2024-01-11
申请号：US18035008
申请日：2021-11-04
申请人： ASML NETHERLANDS B.V.
发明人： Sebastianus Adrianus GOORDEN , Simon Gijsbert Josephus MATHIJSSEN , Leendert Jan KARSSEMEIJER , Manouk RIJPSTRA , Ralph BRINKHOF , Kaustuve BHATTACHARYYA
IPC分类号： G03F9/00 , G03F7/00
CPC分类号： G03F9/7046 , G03F7/706831 , G03F7/70625 , G03F7/706837
摘要： A method for a metrology process, the method includes obtaining first measurement data relating to a first set of measurement conditions and determining a first measurement recipe based on the first measurement data. At least one performance indicator is determined from one or more components of the first measurement data obtained from a component analysis or statistical decomposition. Alternatively, at least one performance indicator is determined from a comparison of one or more first measurement values relating to the first measurement recipe and one or more second measurement values relating to a second measurement recipe, where second measurement recipe is different to the first measurement data and relates a second set of measurement conditions, the second set of measurement conditions being different to the first set of measurement conditions.

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