专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20170029948A1 METHODS AND APPARATUSES FOR TEMPERATURE-INDEXED THIN FILM DEPOSITION 审中-公开
标题翻译：温度指数薄膜沉积的方法和装置
公开(公告)号：US20170029948A1
公开(公告)日：2017-02-02
申请号：US14811435
申请日：2015-07-28
申请人： ASM IP Holding B.V.
发明人： Bert Jongbloed , Delphine Longrie , Robin Roelofs , Lucian Jdira , Suvi Juhani Haukka , Antti Niskanen , Jun Kawahara , Yukihiro Mori
IPC分类号： C23C16/455 , H01L21/285 , H01L21/02 , C23C16/52 , C23C16/458
CPC分类号： C23C16/45544 , C23C16/45527 , C23C16/45565 , C23C16/458 , C23C16/4583 , C23C16/52 , C23C16/54 , H01L21/0228 , H01L21/0262 , H01L21/28556
摘要： In accordance with some embodiments herein, methods and apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other, and the substrate can be contacted with different reactants at different temperatures so as to minimize or prevent undesired gas phase reactions, chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.
摘要翻译：根据本文的一些实施例，提供了用于沉积薄膜的方法和装置。在一些实施例中，提供多个站，其中每个站提供不同的反应物或反应物的组合。这些站可以彼此气体隔离，并且可以在不同的温度下将基板与不同的反应物接触，以便最小化或防止不期望的气相反应，化学气相沉积（CVD）和/或原子层沉积（ALD）反应在不同的反应物或反应物的组合之间。

2. 发明申请

US20200071828A1 TEMPERATURE-INDEXED THIN FILM DEPOSITION REACTORS 审中-公开
公开(公告)号：US20200071828A1
公开(公告)日：2020-03-05
申请号：US16677446
申请日：2019-11-07
申请人： ASM IP Holding B.V.
发明人： Bert Jongbloed , Delphine Longrie , Robin Roelofs , Lucian Jdira , Suvi Haukka , Antti Niskanen , Jun Kawahara , Yukihiro Mori
IPC分类号： C23C16/455 , C23C16/458 , C23C16/52 , H01L21/02 , H01L21/285 , C23C16/54
摘要： In accordance with some embodiments herein, methods and apparatuses for deposition of thin films are provided. In some embodiments, a deposition reactor is provided comprising: a first station configured to contain a substrate, the first station comprising a first heating element; a second station configured to contain the substrate, the second station comprising a second heating element, wherein the first station is configured to contact the substrate with a first reactant in the first station in substantial isolation from the second station such that a layer of the first reactant is deposited on the substrate, wherein the first heating element is configured to heat the first station to a first station temperature during contacting of the substrate with the first reactant, wherein the second station is configured to contact the substrate with a second reactant in the second station substantially in the absence of the first reactant, and wherein the second heating element is configured to heat the second station to a second station temperature during contacting of the substrate with the second reactant, a transfer system; and a controller set to control a cycle of: moving the substrate via the transfer system to the first station, directing the first station to contact the substrate with the first reactant at the first station temperature, moving the substrate to the second station via the transfer system, and directing the second station to contact the substrate with the second reactant at the second station temperature, and further set to repeat the cycle until a film of desired thickness is formed on a surface of the substrate.

3. 发明公开

US20240014030A1 METHOD FOR SELECTIVE DEPOSITION OF SILICON NITRIDE AND STRUCTURE INCLUDING SELECTIVELY-DEPOSITED SILICON NITRIDE LAYER 审中-公开
公开(公告)号：US20240014030A1
公开(公告)日：2024-01-11
申请号：US18218726
申请日：2023-07-06
申请人： ASM IP Holding B.V.
发明人： Agung Setiadi , Hiroki Matsuda , Jun Kawahara
IPC分类号： H01L21/02 , H01J37/32
CPC分类号： H01L21/0217 , H01J37/32816 , H01J37/32449 , H01L21/0228 , H01L21/02211 , H01L21/02274 , H01J2237/332 , H01J2237/182
摘要： A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes performing one or more deposition cycles and performing a treatments process.

4. 发明授权

US10801106B2 Shower plate structure for exhausting deposition inhibiting gas 有权
公开(公告)号：US10801106B2
公开(公告)日：2020-10-13
申请号：US15380557
申请日：2016-12-15
申请人： ASM IP HOLDING B.V.
发明人： Ryoko Yamada , Jun Kawahara , Kazuo Sato
IPC分类号： C23C16/44 , C23C16/455 , B05B16/60 , H01J37/32
摘要： A shower plate adapted to be installed in a plasma deposition apparatus including a gas inlet port, a shower head, a reaction chamber and an exhaust duct, the shower plate being adapted to be attached to the showerhead and having: a front surface adapted to face the gas inlet port; and a rear surface opposite to the front surface, wherein the shower plate has multiple apertures each extending from the front surface to the rear surface, and wherein the shower plate further has at least one aperture extending from the front surface side of the shower plate to the exhaust duct.

5. 发明申请

US20190181002A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20190181002A1
公开(公告)日：2019-06-13
申请号：US15838428
申请日：2017-12-12
申请人： ASM IP Holding B.V.
发明人： Toshiaki Iijima , Masaki Tokunaga , Jun Kawahara
IPC分类号： H01L21/02 , C23C16/50 , C23C16/34 , C23C16/455
摘要： A method for manufacturing a semiconductor device includes forming a SiN film on a substrate. Plasma treatment is applied to the SiN film using a He-containing gas.

6. 外观设计

USD834686S1 Shower plate 有权
公开(公告)号：USD834686S1
公开(公告)日：2018-11-27
申请号：US29587855
申请日：2016-12-15
申请人： ASM IP HOLDING B.V.
设计人： Ryoko Yamada , Jun Kawahara , Kazuo Sato

7. 发明授权

US12024772B2 Apparatuses for thin film deposition 有权
公开(公告)号：US12024772B2
公开(公告)日：2024-07-02
申请号：US17811978
申请日：2022-07-12
申请人： ASM IP HOLDING B.V.
发明人： Jun Kawahara , Suvi Haukka , Antti Niskanen , Eva Tois , Raija Matero , Hidemi Suemori , Jaako Anttila , Yukihiro Mori
IPC分类号： C23C16/455 , C23C16/458 , C23C16/52 , C23C16/54 , H01L21/67 , H01L21/677
CPC分类号： C23C16/45527 , C23C16/45544 , C23C16/4583 , C23C16/52 , C23C16/54 , H01L21/67161 , H01L21/67167 , H01L21/67207 , H01L21/67745
摘要： In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

8. 发明申请

US20220341040A1 APPARATUSES FOR THIN FILM DEPOSITION 有权
公开(公告)号：US20220341040A1
公开(公告)日：2022-10-27
申请号：US17811978
申请日：2022-07-12
申请人： ASM IP HOLDING B.V.
发明人： Jun Kawahara , Suvi Haukka , Antti Niskanen , Eva Tois , Raija Matero , Hidemi Suemori , Jaako Anttila , Yukihiro Mori
IPC分类号： C23C16/455 , C23C16/52 , C23C16/458 , C23C16/54 , H01L21/67 , H01L21/677
摘要： In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

9. 发明授权

US11037780B2 Method for manufacturing semiconductor device with helium-containing gas 有权
公开(公告)号：US11037780B2
公开(公告)日：2021-06-15
申请号：US15838428
申请日：2017-12-12
申请人： ASM IP Holding B.V.
发明人： Toshiaki Iijima , Masaki Tokunaga , Jun Kawahara
IPC分类号： H01L21/02 , C23C16/34 , C23C16/455 , C23C16/50
摘要： A method for manufacturing a semiconductor device includes forming a SiN film on a substrate. Plasma treatment is applied to the SiN film using a He-containing gas.

10. 发明申请

US20170032956A1 METHODS FOR THIN FILM DEPOSITION 审中-公开
标题翻译：薄膜沉积方法
公开(公告)号：US20170032956A1
公开(公告)日：2017-02-02
申请号：US14811370
申请日：2015-07-28
申请人： ASM IP Holding B.V.
发明人： Jun Kawahara , Suvi Haukka , Antti Niskanen , Eva Tois , Raija Matero , Hidemi Suemori , Jaako Anttila , Yukihiro Mori
IPC分类号： H01L21/02 , H01L21/285
CPC分类号： H01L21/28556 , C23C16/04 , C23C16/45551 , C23C16/54 , H01L21/0262 , H01L21/28562 , H01L21/76829 , H01L21/76849
摘要： In accordance with some embodiments herein, methods for deposition of thin films are provided. In some embodiments, thin film deposition is performed in a plurality of stations, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.
摘要翻译：根据本文的一些实施例，提供了用于沉积薄膜的方法。在一些实施例中，在多个站中执行薄膜沉积，其中每个站提供不同的反应物或反应物的组合。这些站可以彼此气体隔离，以便最小化或防止不同反应物或反应物组合之间的不希望的化学气相沉积（CVD）和/或原子层沉积（ALD）反应。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式