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    • 10. 发明授权
    • CVD oxide surface pre-conditioning by inductively coupled O2 plasma
    • 通过电感耦合O2等离子体进行CVD氧化物表面预处理
    • US09240315B1
    • 2016-01-19
    • US14512312
    • 2014-10-10
    • Applied Materials, Inc.
    • Ping Han HsiehTeng-Fang Kuo
    • H01L21/02
    • H01L21/02057H01L21/0206H01L21/02299
    • A method and apparatus for conditioning an oxide surface during a semiconductor device formation process is provided herein. One or more plasma processing operations are performed on a substrate having a fin structure and shallow trench isolation structure (STI) formed thereon. An oxygen containing plasma process may modify surfaces of the STI structure in preparation for an argon containing plasma process. The argon containing plasma process may form a first layer on the fin structure and STI structure and an ammonia fluoride containing plasma process may form a second layer on the first layer. The first and second layers may be removed from the substrate during a subsequent heating process to provide a cleaned fin structure suitable for subsequent processing operations.
    • 本文提供了一种在半导体器件形成过程中调节氧化物表面的方法和装置。 在其上形成有翅片结构和浅沟槽隔离结构(STI)的衬底上执行一个或多个等离子体处理操作。 含氧等离子体工艺可以修饰STI结构的表面,以制备含氩等离子体工艺。 含氩等离子体工艺可以在翅片结构上形成第一层,STI结构和含氟化氨的等离子体工艺可以在第一层上形成第二层。 在随后的加热过程中,第一层和第二层可以从衬底上移除,以提供适于后续处理操作的清洁的鳍结构。