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1. 发明授权

US11088000B2 Wafer based corrosion and time dependent chemical effects 有权
公开(公告)号：US11088000B2
公开(公告)日：2021-08-10
申请号：US16709684
申请日：2019-12-10
申请人： Applied Materials, Inc.
发明人： Leonard Tedeschi , Benjamin Schwarz , Changhun Lee , Ping Han Hsieh , Adauto Diaz, Jr. , Daniel T. McCormick
IPC分类号： H01L21/67 , H01L21/66 , H01L23/522 , H01L23/64
摘要： Embodiments may also include a residual chemical reaction diagnostic device. The residual chemical reaction diagnostic device may include a substrate and a residual chemical reaction sensor formed on the substrate. In an embodiment, the residual chemical reaction sensor provides electrical outputs in response to the presence of residual chemical reactions. In an embodiment, the substrate is a device substrate, and the sensor is formed in a scribe line of the device substrate. In an alternative embodiment, the substrate is a process development substrate. In some embodiments, the residual chemical reaction sensor includes, a first probe pad, wherein a plurality of first arms extend out from the first probe pad, and a second probe pad, wherein a plurality of second arms extend out from the second probe pad and are interdigitated with the first arms.

2. 发明授权

US10515862B2 Wafer based corrosion and time dependent chemical effects 有权
公开(公告)号：US10515862B2
公开(公告)日：2019-12-24
申请号：US15480337
申请日：2017-04-05
申请人： APPLIED MATERIALS, INC.
发明人： Leonard Tedeschi , Benjamin Schwarz , Changhun Lee , Ping Han Hsieh , Adauto Diaz , Daniel T. McCormick
IPC分类号： H01L23/58 , H01L21/66 , H01L21/67 , H01L23/522 , H01L23/64
摘要： Embodiments may also include a residual chemical reaction diagnostic device. The residual chemical reaction diagnostic device may include a substrate and a residual chemical reaction sensor formed on the substrate. In an embodiment, the residual chemical reaction sensor provides electrical outputs in response to the presence of residual chemical reactions. In an embodiment, the substrate is a device substrate, and the sensor is formed in a scribe line of the device substrate. In an alternative embodiment, the substrate is a process development substrate. In some embodiments, the residual chemical reaction sensor includes, a first probe pad, wherein a plurality of first arms extend out from the first probe pad, and a second probe pad, wherein a plurality of second arms extend out from the second probe pad and are interdigitated with the first arms.

3. 发明授权

US10199221B2 Cleaning method 有权
公开(公告)号：US10199221B2
公开(公告)日：2019-02-05
申请号：US15853397
申请日：2017-12-22
申请人： Applied Materials, Inc.
发明人： Christopher S. Olsen , Peter Stone , Teng-fang Kuo , Ping Han Hsieh , Manoj Vellaikal
IPC分类号： H01L21/02 , H01L21/3065 , H01L21/67 , H01L21/687
摘要： Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

4. 发明授权

US11087979B2 Cleaning method 有权
公开(公告)号：US11087979B2
公开(公告)日：2021-08-10
申请号：US16266485
申请日：2019-02-04
申请人： Applied Materials, Inc.
发明人： Christopher S. Olsen , Peter Stone , Teng-fang Kuo , Ping Han Hsieh , Manoj Vellaikal
IPC分类号： H01L21/02 , H01L21/3065 , H01L21/67 , H01L21/687
摘要： Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

5. 发明授权

US09472416B2 Methods of surface interface engineering 有权
标题翻译：表面界面工程方法
公开(公告)号：US09472416B2
公开(公告)日：2016-10-18
申请号：US14506058
申请日：2014-10-03
申请人： APPLIED MATERIALS, INC.
发明人： Jim Zhongyi He , Ping Han Hsieh , Melitta Manyin Hon , Chun Yan , Xuefeng Hua
IPC分类号： H01L21/302 , H01L21/311 , H01L21/3213 , H01L21/02
CPC分类号： H01L21/31116 , H01L21/02057 , H01L21/32132 , H01L21/32137
摘要： Methods for surface interface engineering in semiconductor fabrication are provided herein. In some embodiments, a method of processing a substrate disposed atop a substrate support in a processing volume of a processing chamber includes: generating an ion species from an inductively coupled plasma formed within the processing volume of the processing chamber from a first process gas; exposing a first layer of the substrate to the ion species to form an ammonium fluoride (NH4F) film atop the first layer, wherein the first layer comprises silicon oxide; and heating the substrate to a second temperature at which the ammonium fluoride film reacts with the first layer to selectively etch the silicon oxide.
摘要翻译：本文提供半导体制造中的表面界面工程方法。在一些实施例中，处理设置在处理室的处理体积中的衬底支撑件顶部的衬底的方法包括：从处理室的处理容积中形成的电感耦合等离子体从第一工艺气体产生离子物质; 将所述衬底的第一层暴露于所述离子种类以在所述第一层顶部形成氟化铵（NH 4 F）膜，其中所述第一层包含氧化硅; 以及将所述衬底加热至所述氟化铵膜与所述第一层反应的第二温度以选择性地蚀刻所述氧化硅。

6. 发明授权

US10861693B2 Cleaning method 有权
公开(公告)号：US10861693B2
公开(公告)日：2020-12-08
申请号：US15375683
申请日：2016-12-12
申请人： Applied Materials, Inc.
发明人： Peter Stone , Christopher S. Olsen , Teng-fang Kuo , Ping Han Hsieh , Zhenwen Ding
IPC分类号： H01L21/3065 , H01L21/02 , H01L21/67 , H01L21/687 , H01L21/322 , H01L21/311
摘要： Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process to form an etched surface of the silicon-containing substrate and forming an epitaxial layer on the etched surface of the silicon-containing substrate. The plasma etch process comprises flowing an etchant gas mixture comprising a fluorine-containing precursor and a hydrogen-containing precursor into a substrate-processing region of a first processing chamber and forming a plasma from the etchant gas mixture flowed into the substrate-processing region.

7. 发明授权

US10008388B2 Device conformity control by low temperature, low pressure, inductively coupled ammonia-nitrogen trifluoride plasma 有权
公开(公告)号：US10008388B2
公开(公告)日：2018-06-26
申请号：US15413944
申请日：2017-01-24
申请人： Applied Materials, Inc.
发明人： Ping Han Hsieh , Teng-fang Kuo , Shi Wei Toh , Avgerinos V. Gelatos
IPC分类号： H01L21/311 , H01L21/768
CPC分类号： H01L21/31116 , H01L21/76801
摘要： The present disclosure generally relates to methods of removing oxides and oxide-containing layers from the surfaces of substrates. In one aspect, a method of processing a substrate comprises positioning a substrate in a process chamber, the substrate having an oxide layer thereon; introducing one or more process gases to an interior of the process chamber; ionizing the one or more process gases; exposing the oxide layer to the one or more ionized process gases, wherein the process chamber is maintained at a pressure less than about 50 mTorr during the exposing, and the substrate is maintained at a temperature within a range of about zero degrees Celsius to about 30 degrees Celsius during the exposing; and removing the oxide layer from the surface of the substrate.

8. 发明申请

US20180294200A1 WAFER BASED CORROSION & TIME DEPENDENT CHEMICAL EFFECTS 审中-公开
公开(公告)号：US20180294200A1
公开(公告)日：2018-10-11
申请号：US15480337
申请日：2017-04-05
申请人： APPLIED MATERIALS, INC.
发明人： Leonard TEDESCHI , Benjamin SCHWARZ , Changhun LEE , Ping Han Hsieh , Adauto DIAZ , Daniel T. McCormick
IPC分类号： H01L21/66
摘要： Embodiments may also include a residual chemical reaction diagnostic device. The residual chemical reaction diagnostic device may include a substrate and a residual chemical reaction sensor formed on the substrate. In an embodiment, the residual chemical reaction sensor provides electrical outputs in response to the presence of residual chemical reactions. In an embodiment, the substrate is a device substrate, and the sensor is formed in a scribe line of the device substrate. In an alternative embodiment, the substrate is a process development substrate. In some embodiments, the residual chemical reaction sensor includes, a first probe pad, wherein a plurality of first arms extend out from the first probe pad, and a second probe pad, wherein a plurality of second arms extend out from the second probe pad and are interdigitated with the first arms.

9. 发明授权

US09870921B2 Cleaning method 有权
公开(公告)号：US09870921B2
公开(公告)日：2018-01-16
申请号：US15259489
申请日：2016-09-08
申请人： Applied Materials, Inc.
发明人： Christopher S. Olsen , Peter Stone , Teng-fang Kuo , Ping Han Hsieh , Manoj Vellaikal
IPC分类号： H01L21/3065 , H01L21/02 , H01L21/67 , H01L21/687
CPC分类号： H01L21/02658 , H01J2237/334 , H01L21/02046 , H01L21/02049 , H01L21/02052 , H01L21/0206 , H01L21/02381 , H01L21/02521 , H01L21/02532 , H01L21/0262 , H01L21/3065 , H01L21/67167 , H01L21/67184 , H01L21/6719 , H01L21/68742
摘要： Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

10. 发明授权

US09240315B1 CVD oxide surface pre-conditioning by inductively coupled O2 plasma 有权
标题翻译：通过电感耦合O2等离子体进行CVD氧化物表面预处理
公开(公告)号：US09240315B1
公开(公告)日：2016-01-19
申请号：US14512312
申请日：2014-10-10
申请人： Applied Materials, Inc.
发明人： Ping Han Hsieh , Teng-Fang Kuo
IPC分类号： H01L21/02
CPC分类号： H01L21/02057 , H01L21/0206 , H01L21/02299
摘要： A method and apparatus for conditioning an oxide surface during a semiconductor device formation process is provided herein. One or more plasma processing operations are performed on a substrate having a fin structure and shallow trench isolation structure (STI) formed thereon. An oxygen containing plasma process may modify surfaces of the STI structure in preparation for an argon containing plasma process. The argon containing plasma process may form a first layer on the fin structure and STI structure and an ammonia fluoride containing plasma process may form a second layer on the first layer. The first and second layers may be removed from the substrate during a subsequent heating process to provide a cleaned fin structure suitable for subsequent processing operations.
摘要翻译：本文提供了一种在半导体器件形成过程中调节氧化物表面的方法和装置。在其上形成有翅片结构和浅沟槽隔离结构（STI）的衬底上执行一个或多个等离子体处理操作。含氧等离子体工艺可以修饰STI结构的表面，以制备含氩等离子体工艺。含氩等离子体工艺可以在翅片结构上形成第一层，STI结构和含氟化氨的等离子体工艺可以在第一层上形成第二层。在随后的加热过程中，第一层和第二层可以从衬底上移除，以提供适于后续处理操作的清洁的鳍结构。

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