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1. 发明申请

US20210402444A1 SYSTEM FOR CLEANING SEMICONDUCTOR WAFERS 有权
公开(公告)号：US20210402444A1
公开(公告)日：2021-12-30
申请号：US17470713
申请日：2021-09-09
申请人： ACM Research (Shanghai) Inc.
发明人： Hui WANG , Fufa CHEN , Fuping CHEN , Jian WANG , Xi WANG , Xiaoyan ZHANG , Yinuo JIN , Zhaowei JIA , Liangzhi XIE , Jun WANG , Xuejun LI
IPC分类号： B08B3/12 , B08B1/00 , H01L21/67 , B06B3/02 , B06B1/02 , B08B3/08 , H01L21/02 , H01L21/687
摘要： A system for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the system comprising: a wafer holder for temporary restraining a semiconductor wafer during a cleaning process; an inlet for delivering a cleaning liquid over a surface of the semiconductor wafer; a sonic generator configured to alternately operate at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, to impart sonic energy to the cleaning liquid, the first predetermined period of time and the second predetermined period of time consecutively following one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.

2. 发明申请

US20220037172A1 METHODS AND APPARATUS FOR CLEANING SUBSTRATES 有权
公开(公告)号：US20220037172A1
公开(公告)日：2022-02-03
申请号：US17347011
申请日：2021-06-14
申请人： ACM Research (Shanghai) Inc.
发明人： Hui WANG , Xi WANG , Fuping CHEN , Fufa CHEN , Jian WANG , Xiaoyan ZHANG , Yinuo JIN , Zhaowei JIA , Jun WANG , Xuejun LI
IPC分类号： H01L21/67 , H01L21/02 , H01L21/68 , H01L21/687
摘要： The present invention discloses a method for cleaning substrate without damaging patterned structure on the substrate using ultra/mega sonic device, comprising: applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; after micro jet generated by bubble implosion and before said micro jet generated by bubble implosion damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned.

3. 发明申请

US20220032344A1 METHODS AND APPARATUS FOR CLEANING SUBSTRATES 有权
公开(公告)号：US20220032344A1
公开(公告)日：2022-02-03
申请号：US17378096
申请日：2021-07-16
申请人： ACM Research (Shanghai) Inc.
发明人： Hui WANG , Xi WANG , Fuping CHEN , Fufa CHEN , Jian WANG , Xiaoyan ZHANG , Yinuo JIN , Zhaowei JIA , Jun WANG , Xuejun LI
IPC分类号： B08B3/12 , B06B1/02 , B06B1/06 , H01L21/02 , H01L21/67
摘要： A method for effectively cleaning vias (20034), trenches (20036) or recessed areas on a substrate (20010) using an ultra/mega sonic device (1003, 3003, 16062, 17072), comprising: applying liquid (1032) into a space between a substrate (20010) and an ultra/mega sonic device (1003, 3003, 16062, 17072); setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device (1003, 3003, 16062, 17072); after the ratio of total bubbles volume to volume inside vias (20034), trenches (20036) or recessed areas on the substrate (20010) increasing to a first set value, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device (1003, 3003, 16062, 17072); after the ratio of total bubbles volume to volume inside the vias (20034), trenches (20036) or recessed areas reducing to a second set value, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate (20010) being cleaned.

4. 发明申请

US20220139697A1 METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS 有权
公开(公告)号：US20220139697A1
公开(公告)日：2022-05-05
申请号：US17575244
申请日：2022-01-13
申请人： ACM Research (Shanghai) Inc.
发明人： Jun WANG , Hui WANG , Fufa CHEN , Fuping CHEN , Jian WANG , Xi WANG , Xiaoyan ZHANG , Yinuo JIN , Zhaowei JIA , Liangzhi XIE , Xuejun LI
IPC分类号： H01L21/02 , H01L21/67 , G08B21/18 , B08B13/00 , B08B3/12
摘要： A method for cleaning semiconductor substrate without damaging patterned structure on the semiconductor substrate using ultra/mega sonic device comprises applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive the ultra/mega sonic device; before bubble cavitation in the liquid damaging patterned structure on the substrate, setting the ultra/mega sonic power supply at zero output; after temperature inside bubble cooling down to a set temperature, setting the ultra/mega sonic power supply at frequency f1 and power P1 again; detecting power on time at power P1 and frequency f1 and power off time separately or detecting amplitude of each waveform output by the ultra/mega sonic power supply; comparing the detected power on time with a preset time τ1, or comparing the detected power off time with a preset time τ2, or comparing detected amplitude of each waveform with a preset value, if the detected power on time is longer than the preset time τ1, or the detected power off time is shorter than the preset time τ2, or the detected amplitude of any waveform is larger than the preset value, shut down the ultra/mega sonic power supply and send out an alarm signal.

5. 发明申请

US20210301416A1 ELECTROPLATING APPARATUS AND ELECTROPLATING METHOD 有权
公开(公告)号：US20210301416A1
公开(公告)日：2021-09-30
申请号：US17057981
申请日：2019-04-29
申请人： ACM RESEARCH (SHANGHAI) INC.
发明人： Zhaowei JIA , Jian WANG , Hui WANG , Hongchao YANG
IPC分类号： C25D21/12 , H01L21/288 , H01L21/687 , H01L23/544 , C25D7/12 , C25D5/18 , C25D17/00 , C25D17/06 , C25D17/12
摘要： Embodiments of the present invention provide an electroplating apparatus for electroplating on a surface of a wafer, the electroplating apparatus comprising a plurality of electrodes, the plurality of electrodes forming electric fields on the surface of the wafer, wherein an independent electric field is formed in a designated area, the intensity of the independent electric field is independently controlled, when a notch of the wafer is positioned within the designated area, a total amount of power received by the notch within the designated area is reduced. Embodiments of the present invention also provide an electroplating method for electroplating on a surface of a wafer by using a plurality of electrodes, the method controlling the plurality of electrodes to form electric fields on the surface of the wafer, wherein an independent electric field is formed in a designated area, the intensity of the independent electric field is independently controlled, when a notch of the wafer is positioned within the designated area, a total amount of power received by the notch within the designated area is reduced. The electroplating apparatus and the electroplating method of the present invention control the electroplating height of the notch of the wafer by directly controlling the intensity of the electric field. Compared with a conventional control method which only changing the rotation speed of the wafer, the present invention is more accurate and reliable, the electroplating efficiency is also increased.

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