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    • 2. 发明授权
    • Process for assembling piping or components by TIG welding
    • 通过TIG焊接组装管道或部件的工艺
    • US5396039A
    • 1995-03-07
    • US156817
    • 1993-11-24
    • Henri ChevrelTaeko HattoriHideki TakagiEiichi OzawaJean-Marie Friedt
    • Henri ChevrelTaeko HattoriHideki TakagiEiichi OzawaJean-Marie Friedt
    • B23K9/16B23K9/028B23K9/167B23K9/23B23K9/00
    • B23K9/0286
    • A process to avoid or limit corrosion at the junction of two piping comprising devices welded together, said piping comprising devices being adapted to flow corrosive gases through them, said process comprising the steps of:a) providing a first piping comprising device and connecting it to an inert gas source;b) purging it with an inert gas comprising substantially not more than 10 ppb of an oxidizing gas selected from the group consisting of oxygen, carbon dioxide, water vapor or mixtures thereof, said inert gas flowing from a first opening to a second opening of said piping comprising device;c) providing a second pipe comprising device in flow communication with the first one, while continuing to purge the first piping comprising device;d) welding the two piping comprising devices, said welding being carried out under an inert gas atmosphere; ande) repeating steps c and d if necessary.
    • 一种避免或限制在包括焊接在一起的装置的两个管道的接合处的腐蚀的过程,所述管道包括适于使腐蚀性气体通过它们的装置,所述方法包括以下步骤:a)提供包括装置的第一管道并将其连接到 惰性气源; b)用惰性气体吹扫,所述惰性气体基本上不超过10ppb的选自氧,二氧化碳,水蒸气或其混合物的氧化气体,所述惰性气体从第一开口流到所述 管道包括装置; c)提供包括与第一管流动连通的装置的第二管道,同时继续吹扫包括第一管道装置的第一管道; d)焊接包括装置的两个管道,所述焊接在惰性气体气氛下进行; 和e)如果需要,重复步骤c和d。
    • 4. 发明申请
    • METHOD FOR RECYCLING SILANE (SiH4)
    • 回收硅烷(SiH4)的方法
    • US20110011129A1
    • 2011-01-20
    • US12920956
    • 2009-02-18
    • Pierre BriendBruno AlbanHenri ChevrelDenis Jahan
    • Pierre BriendBruno AlbanHenri ChevrelDenis Jahan
    • F25J3/08
    • C23C16/45593C01B33/043C01B33/046C23C16/24C23C16/4412
    • The invention relates to a method for recycling silane that comprises the following consecutive steps: a) injecting a mixture of pure silane/pure hydrogen (SiH4/H2) in a reaction chamber for making silicon-containing thin layers; b) extracting from the mixture the excess of silane not used during step a)/hydrogen (SiH4/H2) via a pump using a supply gas; c) discharging from said pump, at a pressure close to the atmospheric pressure, a mixture containing at least silane (SiH4), hydrogen (H2) and an amount different from zero of said supply gas; d) separating the silane (SiH4) from the hydrogen/supply gas mixture resulting from the mixture from step c), the silane thus obtained containing less than 100 ppm of supply gas, preferably less than 10 ppm of supply gas and more preferably less than 1 ppm of supply gas; characterised in that at least 50%, preferably 70%, and more preferably 80% of the silane (SiH4) from step b) is reused after step d) for a new step a).
    • 本发明涉及一种回收硅烷的方法,包括以下连续步骤:a)在用于制造含硅薄层的反应室中注入纯硅烷/纯氢(SiH4 / H2)的混合物; b)通过使用供给气体的泵,从步骤a)/氢(SiH 4 / H 2)中从混合物中提取未使用的过量的硅烷; c)在接近大气压的压力下从所述泵排出至少包含硅烷(SiH 4),氢(H 2)和与所述供应气体不同于零的量的混合物; d)从由步骤c)的混合物得到的氢/供应气体混合物中分离硅烷(SiH 4),所得到的硅烷含有少于100ppm的供应气体,优选小于10ppm的供应气体,更优选小于 1 ppm供气; 其特征在于,在步骤d)之后,再次使用来自步骤b)的至少50%,优选70%,更优选80%的硅烷(SiH 4)用于新的步骤a)。