专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110127490A1 Method of Growing Uniform Semiconductor Nanowires without Foreign Metal Catalyst and Devices Thereof 有权
标题翻译：不含外来金属催化剂及其器件的均匀半导体纳米线生长方法
公开(公告)号：US20110127490A1
公开(公告)日：2011-06-02
申请号：US12956039
申请日：2010-11-30
申请人： Zetian Mi
发明人： Zetian Mi
IPC分类号： H01L29/66 , H01L21/20 , H01L33/06
CPC分类号： H01L21/0262 , B82Y10/00 , H01L21/0254 , H01L21/02603 , H01L21/02645 , H01L29/0676 , H01L31/035227 , H01L31/035281 , H01L31/075 , H01L31/184 , H01L31/1848 , H01L33/007 , H01L33/08 , H01L33/18 , Y02E10/544 , Y02E10/548
摘要： Amongst the candidates for very high efficiency solid state lights sources and full solar spectrum solar cells are devices based upon InGaN nanowires. Additionally these nanowires typically require heterostructures, quantum dots, etc which all place requirements for these structures to be grown with relatively few defects. Further manufacturing requirements demand reproducible nanowire diameter, length etc to allow these nanowires to be embedded within device structures. Additionally flexibility according to the device design requires that the nanowire at the substrate may be either InN or GaN. According to the invention a method of growing relatively defect free nanowires and associated structures for group III—nitrides is presented without the requirement for foreign metal catalysts and overcoming the non-uniform growth of prior art non-catalyst growth techniques. The technique also allows for unique dot-within-a-dot nanowire structures.
摘要翻译：在非常高效的固态光源和全太阳光谱太阳能电池的候选者中，是基于InGaN纳米线的器件。另外，这些纳米线通常需要异质结构，量子点等，这些结构都要求这些结构以相对较少的缺陷生长。进一步的制造要求需要可再现的纳米线直径，长度等，以使这些纳米线嵌入器件结构内。另外根据器件设计的灵活性要求衬底上的纳米线可以是InN或GaN。根据本发明，提出了生长相对缺陷的纳米线和用于III族氮化物的相关结构的方法，而不需要外来金属催化剂并克服现有技术非催化剂生长技术的不均匀生长。该技术还允许独特的点对点纳米线结构。

2. 发明申请

US20190013440A1 Dilute-Antimonide Group-II-Nitride Nanostructure Optoelectronic Devices 审中-公开
公开(公告)号：US20190013440A1
公开(公告)日：2019-01-10
申请号：US16030855
申请日：2018-07-09
申请人： Mohammad Faqrul Alam Chowdhury , Zetian Mi
发明人： Mohammad Faqrul Alam Chowdhury , Zetian Mi
IPC分类号： H01L33/32 , H01L33/06 , H01L33/20 , H01L33/42 , H01L33/00 , H01L27/15 , H01L33/44
CPC分类号： H01L33/325 , H01L27/156 , H01L33/0075 , H01L33/06 , H01L33/08 , H01L33/18 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/42 , H01L33/44 , H01L2933/0025
摘要： A nanostructure optoelectronic device, in accordance with aspects of the present technology, can include a group-III element semiconductor with a first type of doping, one or more quantum structures including a dilute-Antimonide group-III-Nitride disposed on the first type of doped group-III element semiconductor, and a group-III element semiconductor with a second type of doping disposed on the dilute-Antimonide group-III-Nitride. The concentration of the Antimony (Sb) can be adjusted to vary the energy bandgap of the dilute-Antimonide group-III-Nitride between 3.4 and 2.0 electron Volts (eV)

3. 发明申请

US20160273115A1 PHOTOCATHODES AND DUAL PHOTOELECTRODES FOR NANOWIRE PHOTONIC DEVICES 审中-公开
标题翻译：用于纳米级光电器件的光电二极管和双光电子器件
公开(公告)号：US20160273115A1
公开(公告)日：2016-09-22
申请号：US15071268
申请日：2016-03-16
申请人： ZETIAN MI , SHIZHAO FAN , BANDAR ALOTAIBI
发明人： ZETIAN MI , SHIZHAO FAN , BANDAR ALOTAIBI
IPC分类号： C25B9/00 , C25B1/00 , H01L31/0336 , H01L31/0232 , H01L31/0304 , H01L31/0352
CPC分类号： C25B9/00 , C01B3/042 , C25B1/003 , Y02E60/364 , Y02E60/368
摘要： Important components of direct solar based nanowire enabled chemical processing and electrochemical systems are a high efficiency and highly stable photocathode and 2-photon dual electrodes. The former enables photo-excited electrons that lead to hydrogen generation whereas the later with complementary energy bandgap photoanode and photocathode enables high efficiency, unassisted solar-driven water splitting. Accordingly, it would be beneficial to leverage the high surface areas and self-contained conversion of direct solar illuminated hydrogen generation from such nanowires with multiple junctions for broad solar spectrum absorption by providing monolithically integrated multi-junction photocathodes. It would be further beneficial to provide nanowire based dual-photoelectrode systems that together with a parallel illumination scheme, can fundamentally address these critical challenges. It would be further beneficial for these nanowire based dual-photoelectrode systems to exploit a semiconductor material family that can be tuned across the solar spectrum, can be doped both p-type and n-type and supported large current conduction.
摘要翻译：直接太阳能纳米线化学处理和电化学系统的重要组成部分是高效率和高度稳定的光电阴极和双光子双电极。前者能够产生导致氢气产生的光激发电子，而后者具有互补能带隙光电阳极和光电阴极，可以实现高效率，无助太阳能驱动的水分解。因此，通过提供单片集成的多结光电阴极，利用具有多个连接点的这种纳米线的高表面积和直接太阳能照射氢生成的独立转换是有利的。提供基于纳米线的双光电子系统将是更有利的，其与平行照明方案一起可以从根本上解决这些关键挑战。对于这些基于纳米线的双光电子系统来说，利用可以在太阳能光谱上调谐的半导体材料族将是更有益的，可掺杂p型和n型并支持大电流传导。

4. 发明授权

US08313966B2 Method for fabricating optical semiconductor tubes and devices thereof 有权
标题翻译：光半导体管的制造方法及其装置
公开(公告)号：US08313966B2
公开(公告)日：2012-11-20
申请号：US12983921
申请日：2011-01-04
申请人： Zetian Mi
发明人： Zetian Mi
IPC分类号： H01L21/00
CPC分类号： H01L29/06 , B82Y10/00 , B82Y20/00 , B82Y40/00 , B82Y99/00 , G02B6/12 , H01L29/0665 , H01L29/0673 , H01L29/66469 , H01L29/775 , H01S5/021 , H01S5/0215 , H01S5/0217 , H01S5/1042 , H01S5/1071 , H01S5/3412
摘要： Semiconductor micro- and nanotubes allow the incorporation of ordered structures such as quantum wells and quantum dots into them providing the potential for ultralow threshold micro- and nanoscale lasers for use in applications such as future ultrahigh-speed photonic systems as well as quantum information processing. According to the invention a means of manufacturing these with high reproducibility, low processing complexity, and at high densities is provided. Also provided is a means of releasing these micro- and nanotubes with low stress and a method of “pick-and-place” allowing micro- and nanotubes to be exploited in devices integrated on substrates that are either incompatible with the manufacturing technique or where the area of substrate required to manufacture them is detrimental to the cost or performance of the circuit.
摘要翻译：半导体微纳米管和纳米管可以将诸如量子阱和量子点的有序结构并入其中，为超低阈值微纳米级激光器提供潜力，用于未来超高速光子系统以及量子信息处理等应用。根据本发明，提供了具有高再现性，低加工复杂性和高密度的制造方法。还提供了释放这些具有低应力的微纳米管和纳米管的方法，以及一种拾取和放置的方法，允许在集成在与制造技术不相容的基底上的器件中使用微纳米管和纳米管，制造它们所需的基板对电路的成本或性能是有害的。

5. 发明申请

US20190148583A1 Core-Shell InGaN/AlGaN Quantum Nanowire Photonic Structures 审中-公开
公开(公告)号：US20190148583A1
公开(公告)日：2019-05-16
申请号：US16044337
申请日：2018-07-24
申请人： Zetian MI , Yong-Ho RA , Roksana RASHID , Xianhe LIU
发明人： Zetian MI , Yong-Ho RA , Roksana RASHID , Xianhe LIU
IPC分类号： H01L33/06 , H01L33/32 , H01L33/00 , H01L33/18 , H01S5/343 , H01S5/34 , G02B6/122
摘要： A nanowire can include a first semiconductor portion, a second portion including a quantum structure disposed on the first portion, and a second semiconductor portion disposed on the second portion opposite the first portion. The quantum structure can include one or more quantum core structures and a quantum core shell disposed about the one or more quantum core structures. The one or more quantum core structures can include one or more quantum disks, quantum arch-shaped forms, quantum wells, quantum dots within quantum wells or combinations thereof.

6. 发明申请

US20160365480A1 HIGH EFFICIENCY VISIBLE AND ULTRAVIOLET NANOWIRE EMITTERS 审中-公开
标题翻译：高效可见和超紫外线纳米级发光体
公开(公告)号：US20160365480A1
公开(公告)日：2016-12-15
申请号：US15177608
申请日：2016-06-09
申请人： ZETIAN MI , SONGRUI ZHAO , RENJIE WANG
发明人： ZETIAN MI , SONGRUI ZHAO , RENJIE WANG
IPC分类号： H01L33/06 , H01S5/042 , H01L33/38 , H01L33/00 , H01L33/08 , H01L33/32
CPC分类号： H01L33/06 , H01L33/007 , H01L33/08 , H01L33/18 , H01L33/32 , H01S5/021 , H01S5/1042 , H01S5/32341 , H01S5/4006
摘要： GaN-based nanowire heterostructures have been intensively studied for applications in light emitting diodes (LEDs), lasers, solar cells and solar fuel devices. Surface charge properties play a dominant role on the device performance and have been addressed within the prior art by use of a relatively thick large bandgap AlGaN shell covering the surfaces of axial InGaN nanowire LED heterostructures has been explored and shown substantial promise in reducing surface recombination leading to improved carrier injection efficiency and output power. However, these lead to increased complexity in device design, growth and fabrication processes thereby reducing yield/performance and increasing costs for devices. Accordingly, there are taught self-organising InGaN/AlGaN core-shell quaternary nanowire heterostructures wherein the In-rich core and Al-rich shell spontaneously form during the growth process.
摘要翻译： GaN基纳米线异质结构已经被深入研究用于发光二极管（LED），激光器，太阳能电池和太阳能燃料装置中的应用。表面电荷特性在器件性能上起主要作用，并且在现有技术中已经通过使用覆盖轴向InGaN纳米线LED异质结构的表面的相对较厚的大带隙AlGaN壳已经被探索并且显示出在减少表面复合引线以提高载流子注入效率和输出功率。然而，这些导致设备设计，增长和制造过程的复杂性增加，从而降低产量/性能并增加设备的成本。因此，已经教导了自组织的InGaN / AlGaN核 - 壳四元纳米线异质结构，其中在生长过程中富含In和Fe的壳自发形成。

7. 发明授权

US08563395B2 Method of growing uniform semiconductor nanowires without foreign metal catalyst and devices thereof 有权
标题翻译：不含异金属催化剂的均匀半导体纳米线生长方法及其装置
公开(公告)号：US08563395B2
公开(公告)日：2013-10-22
申请号：US12956039
申请日：2010-11-30
申请人： Zetian Mi
发明人： Zetian Mi
IPC分类号： H01L21/76
CPC分类号： H01L21/0262 , B82Y10/00 , H01L21/0254 , H01L21/02603 , H01L21/02645 , H01L29/0676 , H01L31/035227 , H01L31/035281 , H01L31/075 , H01L31/184 , H01L31/1848 , H01L33/007 , H01L33/08 , H01L33/18 , Y02E10/544 , Y02E10/548
摘要： Amongst the candidates for very high efficiency solid state lights sources and full solar spectrum solar cells are devices based upon InGaN nanowires. Additionally these nanowires typically require heterostructures, quantum dots, etc which all place requirements for these structures to be grown with relatively few defects. Further manufacturing requirements demand reproducible nanowire diameter, length etc to allow these nanowires to be embedded within device structures. Additionally flexibility according to the device design requires that the nanowire at the substrate may be either InN or GaN. According to the invention a method of growing relatively defect free nanowires and associated structures for group III—nitrides is presented without the requirement for foreign metal catalysts and overcoming the non-uniform growth of prior art non-catalyst growth techniques. The technique also allows for unique dot-within-a-dot nanowire structures.
摘要翻译：在非常高效的固态光源和全太阳光谱太阳能电池的候选者中，是基于InGaN纳米线的器件。另外，这些纳米线通常需要异质结构，量子点等，这些结构都要求这些结构以相对较少的缺陷生长。进一步的制造要求需要可再现的纳米线直径，长度等，以使这些纳米线嵌入器件结构内。另外根据器件设计的灵活性要求衬底上的纳米线可以是InN或GaN。根据本发明，提出了生长相对缺陷的纳米线和用于III族氮化物的相关结构的方法，而不需要外来金属催化剂并克服现有技术非催化剂生长技术的不均匀生长。该技术还允许独特的点对点纳米线结构。

8. 发明授权

US08669544B2 High efficiency broadband semiconductor nanowire devices and methods of fabricating without foreign catalysis 有权
标题翻译：高效宽带半导体纳米线器件及其制造方法，无需外界催化
公开(公告)号：US08669544B2
公开(公告)日：2014-03-11
申请号：US13370449
申请日：2012-02-10
申请人： Zetian Mi , Kai Cui , Hieu Pham Trung Nguyen
发明人： Zetian Mi , Kai Cui , Hieu Pham Trung Nguyen
IPC分类号： H01L29/06
CPC分类号： H01L29/0676 , B82Y10/00 , B82Y40/00 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02573 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02664 , H01L29/0665 , H01L29/068 , H01L29/127 , H01L29/20 , H01L29/2003 , H01L29/22 , H01L29/66469 , H01L29/66977 , H01L29/775 , H01L33/005 , H01L33/06 , H01L33/18
摘要： Amongst the candidates for very high efficiency solid state light sources and full solar spectrum solar cells are devices based upon InGaN nanowires. Additionally these nanowires typically require heterostructures, quantum dots, etc which all place requirements for these structures to be grown with relatively few defects and in a controllable reproducible manner. Additionally flexibility according to the device design requires that the nanowire at the substrate may be either InN or GaN. According to the invention a method of growing relatively defect free nanowires and associated structures for group IIIA-nitrides is presented without the requirement for foreign metal catalysts and overcoming the non-uniform growth of prior art non-catalyst growth techniques. According to other embodiments of the invention self-organizing dot-within-a-dot nanowire and dot-within-a-dot-within-a-well nanowire structures are presented.
摘要翻译：在非常高效的固态光源和全太阳光谱太阳能电池的候选者中，是基于InGaN纳米线的器件。另外，这些纳米线通常需要异质结构，量子点等，这些都使得这些结构以相对较少的缺陷生长并且以可控的可重现的方式生长。另外根据器件设计的灵活性要求衬底上的纳米线可以是InN或GaN。根据本发明，提出了生长相对缺陷的纳米线和用于IIIA族氮化物的相关结构的方法，而不需要外来金属催化剂并克服现有技术的非催化剂生长技术的不均匀生长。根据本发明的其它实施方案，提出了自组织点内纳米线和点内一点内的纳米线结构。

9. 发明申请

US20120205613A1 High Efficiency Broadband Semiconductor Nanowire Devices and Methods of Fabricating without Foreign Catalysis 有权
标题翻译：高效率宽带半导体纳米线器件及其制造方法，无需外界催化
公开(公告)号：US20120205613A1
公开(公告)日：2012-08-16
申请号：US13370449
申请日：2012-02-10
申请人： Zetian Mi , Kai Cui , Hieu Pham Trung Nguyen
发明人： Zetian Mi , Kai Cui , Hieu Pham Trung Nguyen
IPC分类号： H01L29/06 , H01L21/20
CPC分类号： H01L29/0676 , B82Y10/00 , B82Y40/00 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02573 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02664 , H01L29/0665 , H01L29/068 , H01L29/127 , H01L29/20 , H01L29/2003 , H01L29/22 , H01L29/66469 , H01L29/66977 , H01L29/775 , H01L33/005 , H01L33/06 , H01L33/18
摘要： Amongst the candidates for very high efficiency solid state light sources and full solar spectrum solar cells are devices based upon InGaN nanowires. Additionally these nanowires typically require heterostructures, quantum dots, etc which all place requirements for these structures to be grown with relatively few defects and in a controllable reproducible manner. Additionally flexibility according to the device design requires that the nanowire at the substrate may be either InN or GaN. According to the invention a method of growing relatively defect free nanowires and associated structures for group IIIA-nitrides is presented without the requirement for foreign metal catalysts and overcoming the non-uniform growth of prior art non-catalyst growth techniques. According to other embodiments of the invention self-organizing dot-within-a-dot nanowire and dot-within-a-dot-within-a-well nanowire structures are presented.
摘要翻译：在非常高效的固态光源和全太阳光谱太阳能电池的候选者中，是基于InGaN纳米线的器件。另外，这些纳米线通常需要异质结构，量子点等，这些都使得这些结构以相对较少的缺陷生长并且以可控的可重现的方式生长。另外根据器件设计的灵活性要求衬底上的纳米线可以是InN或GaN。根据本发明，提出了生长相对缺陷的纳米线和用于IIIA族氮化物的相关结构的方法，而不需要外来金属催化剂并克服现有技术的非催化剂生长技术的不均匀生长。根据本发明的其它实施方案，提出了自组织点内纳米线和点内一点内的纳米线结构。

10. 发明申请

US20110163421A1 Method for Fabricating Optical Semiconductor Tubes and Devices Thereof 有权
标题翻译：制造光半导体管及其器件的方法
公开(公告)号：US20110163421A1
公开(公告)日：2011-07-07
申请号：US12983921
申请日：2011-01-04
申请人： Zetian Mi
发明人： Zetian Mi
IPC分类号： H01L29/06 , H01L21/302 , B82Y20/00
CPC分类号： H01L29/06 , B82Y10/00 , B82Y20/00 , B82Y40/00 , B82Y99/00 , G02B6/12 , H01L29/0665 , H01L29/0673 , H01L29/66469 , H01L29/775 , H01S5/021 , H01S5/0215 , H01S5/0217 , H01S5/1042 , H01S5/1071 , H01S5/3412
摘要： Semiconductor micro- and nanotubes allow the incorporation of ordered structures such as quantum wells and quantum dots into them providing the potential for ultralow threshold micro- and nanoscale lasers for use in applications such as future ultrahigh-speed photonic systems as well as quantum information processing. According to the invention a means of manufacturing these with high reproducibility, low processing complexity, and at high densities is provided. Also provided is a means of releasing these micro- and nanotubes with low stress and a method of “pick-and-place” allowing micro- and nanotubes to be exploited in devices integrated on substrates that are either incompatible with the manufacturing technique or where the area of substrate required to manufacture them is detrimental to the cost or performance of the circuit.
摘要翻译：半导体微纳米管和纳米管可以将诸如量子阱和量子点的有序结构并入其中，为超低阈值微纳米级激光器提供潜力，用于未来超高速光子系统以及量子信息处理等应用。根据本发明，提供了具有高再现性，低加工复杂性和高密度的制造方法。还提供了释放这些具有低应力的这些微纳米管和纳米管的方法，以及一种“拾取和放置”的方法，允许在与制造技术不兼容的基板上集成的器件中使用微纳米管和纳米管，或者制造基板所需的面积对电路的成本或性能是有害的。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式