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1. 发明申请

US20160365480A1 HIGH EFFICIENCY VISIBLE AND ULTRAVIOLET NANOWIRE EMITTERS 审中-公开
标题翻译：高效可见和超紫外线纳米级发光体
公开(公告)号：US20160365480A1
公开(公告)日：2016-12-15
申请号：US15177608
申请日：2016-06-09
申请人： ZETIAN MI , SONGRUI ZHAO , RENJIE WANG
发明人： ZETIAN MI , SONGRUI ZHAO , RENJIE WANG
IPC分类号： H01L33/06 , H01S5/042 , H01L33/38 , H01L33/00 , H01L33/08 , H01L33/32
CPC分类号： H01L33/06 , H01L33/007 , H01L33/08 , H01L33/18 , H01L33/32 , H01S5/021 , H01S5/1042 , H01S5/32341 , H01S5/4006
摘要： GaN-based nanowire heterostructures have been intensively studied for applications in light emitting diodes (LEDs), lasers, solar cells and solar fuel devices. Surface charge properties play a dominant role on the device performance and have been addressed within the prior art by use of a relatively thick large bandgap AlGaN shell covering the surfaces of axial InGaN nanowire LED heterostructures has been explored and shown substantial promise in reducing surface recombination leading to improved carrier injection efficiency and output power. However, these lead to increased complexity in device design, growth and fabrication processes thereby reducing yield/performance and increasing costs for devices. Accordingly, there are taught self-organising InGaN/AlGaN core-shell quaternary nanowire heterostructures wherein the In-rich core and Al-rich shell spontaneously form during the growth process.
摘要翻译： GaN基纳米线异质结构已经被深入研究用于发光二极管（LED），激光器，太阳能电池和太阳能燃料装置中的应用。表面电荷特性在器件性能上起主要作用，并且在现有技术中已经通过使用覆盖轴向InGaN纳米线LED异质结构的表面的相对较厚的大带隙AlGaN壳已经被探索并且显示出在减少表面复合引线以提高载流子注入效率和输出功率。然而，这些导致设备设计，增长和制造过程的复杂性增加，从而降低产量/性能并增加设备的成本。因此，已经教导了自组织的InGaN / AlGaN核 - 壳四元纳米线异质结构，其中在生长过程中富含In和Fe的壳自发形成。

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