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1. 发明授权

US11997379B2 Image processing system, image processing apparatus, and image processing method 有权
公开(公告)号：US11997379B2
公开(公告)日：2024-05-28
申请号：US17631047
申请日：2020-09-04
申请人： Osamu Torii , Kohei Marumoto , Yusuke Fukuoka
发明人： Osamu Torii , Kohei Marumoto , Yusuke Fukuoka
IPC分类号： H04N23/63 , G06F16/11 , G06F16/16
CPC分类号： H04N23/632 , G06F16/11 , G06F16/164
摘要： An image processing system includes a generating unit and a storing unit. The generating unit determines a subject included in a wide-angle image and generate a partial image including the subject from the wide-angle image. The storing unit stores the partial image in association with the wide-angle image from which the partial image is extracted.

2. 发明申请

US20110088849A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20110088849A1
公开(公告)日：2011-04-21
申请号：US12992327
申请日：2009-05-14
申请人： Katsushi Kishimoto , Yusuke Fukuoka
发明人： Katsushi Kishimoto , Yusuke Fukuoka
IPC分类号： C23F1/08 , C23C16/50
CPC分类号： C23C16/5096 , H05H1/2406 , H05H2001/2418
摘要： A plasma processing apparatus, comprising: a reaction chamber; a gas inlet portion that introduces a reactant gas into the reaction chamber; an exhaust portion that exhausts the reactant gas from said reaction chamber; at least three discharge portions respectively made up of first electrode and second electrode pairs, a first electrode and a second electrode constituting each one of the first electrode and second electrode pairs being disposed to oppose to each other inside said reaction chamber, so as to cause a plasma discharge in the reactant gas; a support portion that supports and parallels the first electrode and second electrode pairs in one of a horizontal manner and a vertical manner; and a power supply portion that supplies power to all of said discharge portions, wherein said power supply portion includes a high frequency generator and an amplifier that amplifies high frequency power from the high frequency generator to be supplied to the first electrodes, and a first electrode of one discharge portion out of said discharge portions and a first electrode of other discharge portion out of said discharge portions being adjacent to the one discharge portion are connected to an identical one of the high frequency generator respectively via separate ones of the amplifier, or respectively connected to separate ones of the high frequency generator via the amplifier, and the second electrodes of respective discharge portions are grounded.
摘要翻译：一种等离子体处理装置，包括：反应室; 将反应气体引入反应室的气体入口部; 从所述反应室排出反应气体的排气部; 分别由第一电极和第二电极对构成的至少三个放电部分，构成第一电极和第二电极对中的每一个的第一电极和第二电极在反应室内部彼此相对设置，从而使反应气体中的等离子体放电; 支撑部，其以水平方式和垂直方式之一支撑并平行第一电极和第二电极对; 以及向全部所述放电部供电的供电部，其特征在于，所述供电部包括高频发生器和放大来自所述高频发生器的供给所述第一电极的高频电力的放大器，以及第一电极所述放电部分中的一个放电部分和与所述一个放电部分相邻的所述放电部分中的另一个放电部分的第一电极分别经由所述放大器中的分别连接到所述高频发生器中的相同的一个，经由放大器连接到高频发生器的单独的一个，并且各个放电部分的第二电极接地。

3. 发明授权

US07540257B2 Plasma processing apparatus and semiconductor device manufactured by the same apparatus 失效
标题翻译：等离子体处理装置和由同一装置制造的半导体装置
公开(公告)号：US07540257B2
公开(公告)日：2009-06-02
申请号：US11328448
申请日：2006-01-10
申请人： Katsushi Kishimoto , Yusuke Fukuoka
发明人： Katsushi Kishimoto , Yusuke Fukuoka
IPC分类号： C23C16/00
CPC分类号： H01J37/32431
摘要： A plasma processing apparatus of this invention includes a sealable chamber to be introduced with reactive material gas, a plurality of pairs of cathode-anode bodies arranged in the chamber, for forming a plurality of discharge spaces for performing plasma discharge of the material gas, a power supply for plasma discharge, placed outside the chamber, a matching box placed outside the chamber, for matching impedance between the cathode-anode bodies and the power supply, and a power introduction wire extending to each of the cathodes from the power supply via the matching box. Herein, the power introduction wire is branched to the number corresponding to the number of the cathodes between the matching box and the cathodes, and the branched wires are symmetrically extended.
摘要翻译：本发明的等离子体处理装置包括能够引入反应性材料气体的可密封腔室，布置在腔室中的多对阴极 - 阳极体，用于形成用于进行材料气体的等离子体放电的多个放电空间; 用于等离子体放电的电源，放置在室外部，匹配盒放置在室外，用于匹配阴极 - 阳极体和电源之间的阻抗;以及功率引入线，其通过电源从电源延伸到每个阴极配套箱这里，功率引入线被分支到与匹配箱和阴极之间的阴极数相对应的数量，并且分支线对称地延伸。

4. 发明申请

US20060191480A1 Plasma processing apparatus and semiconductor device manufactured by the same apparatus 有权
标题翻译：等离子体处理装置和由同一装置制造的半导体装置
公开(公告)号：US20060191480A1
公开(公告)日：2006-08-31
申请号：US11328461
申请日：2006-01-10
申请人： Katsushi Kishimoto , Yusuke Fukuoka
发明人： Katsushi Kishimoto , Yusuke Fukuoka
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/3244
摘要： A plasma processing apparatus of this invention includes a sealable chamber, a gas supply source of reactive material gas, placed outside the chamber, a gas introduction pipe connected to the gas supply source, for introducing the material gas into the chamber, and a plurality of sets of cathode-anode bodies for forming a plurality of discharge spaces which perform plasma discharge of the material gas in the chamber. Herein, the gas introduction pipe includes a gas branch section arranged in the chamber, a main pipe for connecting the gas supply source to the gas branch section, and a plurality of branch pipes connected from the main pipe to each of the discharge spaces via the gas branch section. The branch pipes are configured so that conductances thereof are substantially equivalent to each other.
摘要翻译：本发明的等离子体处理装置包括：可密封室，反应性材料气体供应源，放置在室外;气体导入管，连接到气体供应源，用于将材料气体引入室;以及多个用于形成执行腔室中的原料气体的等离子体放电的多个放电空间的阴极 - 阳极体组。这里，气体引入管包括设置在室中的气体分支部，用于将气体供给源连接到气体分支部的主管，以及从主管经由主管连接到每个排出空间的多个分支管气支部。分支管构造成使得其电导基本上彼此相等。

5. 发明申请

US20050085003A1 Silicon-based thin-film photoelectric conversion device and method of manufacturing thereof 失效
公开(公告)号：US20050085003A1
公开(公告)日：2005-04-21
申请号：US10942958
申请日：2004-09-17
申请人： Katsushi Kishimoto , Yusuke Fukuoka , Katsuhiko Nomoto
发明人： Katsushi Kishimoto , Yusuke Fukuoka , Katsuhiko Nomoto
IPC分类号： H01L31/04 , H01L21/00 , H01L31/075 , H01L31/18
CPC分类号： H01L31/077 , H01L31/1824 , Y02E10/545 , Y02P70/521
摘要： An excellent silicon-based thin-film photoelectric conversion device is manufactured simply and efficiently at a low cost. Specifically, a method of manufacturing the silicon-based thin-film photoelectric conversion device including a p-type semiconductor layer, an i-type microcrystalline silicon-based photoelectric conversion layer and an n-type semiconductor layer deposited by plasma CVD includes the steps of: successively depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer on a substrate within the same plasma CVD film deposition chamber; transferring the substrate out of the film deposition chamber; and subsequently to the step of depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer, eliminating influences of remaining n-type impurities on a cathode and/or within the film deposition chamber.

6. 发明申请

US20180373483A1 IMAGE MANAGEMENT SYSTEM, IMAGE MANAGEMENT METHOD, AND PROGRAM 审中-公开
公开(公告)号：US20180373483A1
公开(公告)日：2018-12-27
申请号：US15533727
申请日：2015-11-25
申请人： Hirohisa INAMOTO , Yusuke FUKUOKA
发明人： Hirohisa INAMOTO , Yusuke FUKUOKA
IPC分类号： G06F3/14 , G06F17/30 , H04N5/232
摘要： An image management system includes a reception unit and transmission unit. The reception unit receives, from a first communication terminal, link information that is transmitted from the image management system and is managed in a link information management system. The transmission unit transmits, to the first communication terminal, a view script and image data corresponding to the link information. The image data is received from a second communication terminal.

7. 发明申请

US20180107886A1 INFORMATION PROCESSING SYSTEM AND INFORMATION PROCESSING METHOD 审中-公开
公开(公告)号：US20180107886A1
公开(公告)日：2018-04-19
申请号：US15729744
申请日：2017-10-11
申请人： Hirohisa INAMOTO , Yusuke FUKUOKA , Tadayohi NAKATANI , Kei KUSHIMOTO , Takuji NOMURA
发明人： Hirohisa INAMOTO , Yusuke FUKUOKA , Tadayohi NAKATANI , Kei KUSHIMOTO , Takuji NOMURA
IPC分类号： G06K9/20 , G06K9/18 , G06F3/0481 , H04N5/232
CPC分类号： G06K9/2063 , G06F3/0481 , G06K9/18 , H04N1/00968 , H04N5/2258 , H04N5/23206 , H04N5/23229 , H04N5/23238 , H04N5/23293 , H04N5/232941 , H04N2201/325
摘要： An information processing apparatus for processing an image includes circuitry unit and a communication interface. The circuitry acquires identification information to identify a set of one or more objects to be imaged by an imaging device according to a predetermined imaging sequence. The communication interface transmits at least one image of the set of one or more objects that is captured by the imaging device in association with the identification information, to a management device.

8. 发明申请

US20120155994A1 VACUUM PROCESSING DEVICE AND VACUUM PROCESSING FACTORY 审中-公开
标题翻译：真空加工设备和真空加工设备
公开(公告)号：US20120155994A1
公开(公告)日：2012-06-21
申请号：US13391886
申请日：2010-08-23
申请人： Katsushi Kishimoto , Yusuke Fukuoka
发明人： Katsushi Kishimoto , Yusuke Fukuoka
IPC分类号： H01L21/677
CPC分类号： H01L21/67724 , C23C16/54 , H01L21/6719 , H01L21/6773 , H01L21/67736 , H01L21/67775
摘要： A vacuum processing device includes a first processing chamber for housing a workpiece and performing vacuum processing on the workpiece, an evacuatable second processing chamber for housing a workpiece to be vacuum-processed and a workpiece having been vacuum-processed, a gate unit provided between the first and second processing chambers so that the gate unit is attachable to and detachable from the first processing chamber, a transport device for loading the workpiece to be vacuum-processed from a loading unit to a vacuum processing unit through the gate unit, and unloading the workpiece having been vacuum-processed from the vacuum processing unit to an unloading unit through the gate unit, and a movement mechanism for separating the first and second processing chambers from each other.
摘要翻译：真空处理装置包括：用于容纳工件并对工件进行真空处理的第一处理室，用于容纳要被真空处理的工件的可抽空的第二处理室和被真空处理的工件; 第一处理室和第二处理室，使得门单元可附接到第一处理室和可从第一处理室拆卸;传送装置，用于通过门单元将从加载单元被真空处理的工件装载到真空处理单元，工件已经从真空处理单元被真空处理到通过门单元的卸载单元，以及用于将第一和第二处理室彼此分离的移动机构。

9. 发明授权

US08137046B2 Substrate transfer apparatus and substrate transfer method 有权
标题翻译：基板转印装置和基板转印方法
公开(公告)号：US08137046B2
公开(公告)日：2012-03-20
申请号：US12536912
申请日：2009-08-06
申请人： Katsushi Kishimoto , Yusuke Fukuoka , Noriyoshi Kohama , Yusuke Ozaki
发明人： Katsushi Kishimoto , Yusuke Fukuoka , Noriyoshi Kohama , Yusuke Ozaki
IPC分类号： B65G35/00
CPC分类号： H01L21/67784 , H01L21/67748
摘要： A substrate transfer apparatus comprising: a plurality of floating-transfer guide plates adjacent to each other, each of guide plates having a plurality of floating gas ejecting holes; a gas supplying source; a tray to mount a substrate to be transferred, and that is floated by the floating gas; and a transfer arm for transferring the floated tray from the guide plate to the adjacent other guide plate, wherein the tray includes both side edges, and a contact/engagement portion formed at the respective both side edges for the transfer arm, each of the transfer arms including a base portion that can horizontally reciprocate along a rail provided so as to be parallel to the transfer direction, a guide portion provided to the base portion, that can horizontally reciprocate in a direction orthogonal to the transfer direction, and an arm portion provided to the guide portion, that can horizontally reciprocate in the direction parallel to the transfer direction.
摘要翻译：一种基板传送装置，包括：彼此相邻的多个浮动传送导向板，每个导板具有多个浮动气体喷射孔; 气体供应源; 用于安装待转移的基板并由浮动气体浮动的托盘; 以及用于将浮托盘从引导板传送到相邻的另一个引导板的传送臂，其中托盘包括两个侧边缘，以及形成在传送臂的相应两个侧边缘处的接触/接合部分，每个传送包括可沿着设置成平行于传送方向的轨道水平往复运动的基部的臂，设置在基部上的引导部，该引导部能够沿与传送方向正交的方向水平往复运动;以及臂部，导向部分能够沿平行于传送方向的方向水平往复运动。

10. 发明申请

US20110312167A1 PLASMA PROCESSING APPARATUS, AND DEPOSITION METHOD AN ETCHING METHOD USING THE PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体处理装置和使用等离子体处理装置的蚀刻方法的沉积方法
公开(公告)号：US20110312167A1
公开(公告)日：2011-12-22
申请号：US12995579
申请日：2009-05-28
申请人： Katsushi Kishimoto , Yusuke Fukuoka , Nobuyuki Tanigawa
发明人： Katsushi Kishimoto , Yusuke Fukuoka , Nobuyuki Tanigawa
IPC分类号： H01L21/205 , H01L21/3065 , C23C16/50
CPC分类号： H01J37/32568 , C23C16/509 , H01J37/32091
摘要： A plasma processing apparatus, comprising: a reaction chamber; a plurality of discharge portions each made up of a pair of a first electrode and a second electrode disposed inside the reaction chamber so as to oppose to each other and to cause a plasma discharge under an atmosphere of a reactant gas; and a dummy electrode, wherein a plurality of the first electrodes are connected to a power supply portion, a plurality of the second electrodes are grounded, and the dummy electrode is disposed so as to oppose to an outer surface side of an external first electrode in terms of a parallel direction out of the plurality of the first electrodes which are disposed in the parallel direction, and is grounded.
摘要翻译：一种等离子体处理装置，包括：反应室; 多个放电部分，每个由一对第一电极和第二电极构成，设置在反应室内部以彼此相对，并在反应气体的气氛下引起等离子体放电; 和虚拟电极，其中多个所述第一电极连接到电源部分，多个所述第二电极接地，并且所述虚拟电极被设置为与所述外部第一电极的外表面侧相对并排设置在平行方向上的多个第一电极中的并联方向的接地。

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