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    • 2. 发明申请
    • Method and apparatus for fabricating crack-free group III nitride semiconductor materials
    • 制造无裂纹III族氮化物半导体材料的方法和装置
    • US20060280668A1
    • 2006-12-14
    • US11483455
    • 2006-07-10
    • Vladimir DmitrievYuri Melnik
    • Vladimir DmitrievYuri Melnik
    • C01B21/072
    • C30B25/00C30B25/02C30B29/403Y10S117/915
    • A method and apparatus for growing low defect, optically transparent, colorless, crack-free, substantially flat, single crystal Group III nitride epitaxial layers with a thickness of at least 10 microns is provided. These layers can be grown on large area substrates comprised of Si, SiC, sapphire, GaN, AlN, GaAs, AlGaN and others. In one aspect, the crack-free Group III nitride layers are grown using a modified HVPE technique. If desired, the shape and the stress of Group III nitride layers can be controlled, thus allowing concave, convex and flat layers to be controllably grown. After the growth of the Group III nitride layer is complete, the substrate can be removed and the freestanding Group III nitride layer used as a seed for the growth of a boule of Group III nitride material. The boule can be sliced into individual wafers for use in the fabrication of a variety of semiconductor structures (e.g., HEMTs, LEDs, etc.).
    • 提供了一种用于生长厚度至少为10微米的低缺陷,光学透明,无色,无裂纹,基本平坦的单晶III族氮化物外延层的方法和装置。 这些层可以在由Si,SiC,蓝宝石,GaN,AlN,GaAs,AlGaN等构成的大面积基板上生长。 在一个方面,使用改进的HVPE技术生长无裂纹的III族氮化物层。 如果需要,可以控制III族氮化物层的形状和应力,从而允许可控地生长凹面,凸面和平面层。 在III族氮化物层的生长完成之后,可以去除衬底,并且将独立的III族氮化物层用作用于生长III族氮化物材料的晶粒的种子。 可以将该小片切成单独的晶片,以用于制造各种半导体结构(例如,HEMT,LED等)。
    • 4. 发明申请
    • Reactor for extended duration growth of gallium containing single crystals
    • 含镓单晶长时间生长反应器
    • US20050056222A1
    • 2005-03-17
    • US10632736
    • 2003-08-01
    • Yuri MelnikVitali SoukhoveevVladimir IvantsovKatie TsvetkovVladimir Dmitriev
    • Yuri MelnikVitali SoukhoveevVladimir IvantsovKatie TsvetkovVladimir Dmitriev
    • C30B25/00C23C16/00
    • C30B25/00C30B25/02C30B29/403C30B29/406Y10T117/10Y10T117/1016
    • An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.
    • 提供一种用于生长体GaN和AlGaN单晶晶粒的装置,优选使用改进的HVPE工艺。 单晶晶粒通常具有超过4立方厘米的体积,最小尺寸约为1厘米。 如果需要,可以在生长期间掺杂大块材料以实现n,i-或p型导电性。 为了具有足够的持续时间的生长周期,优选使用延伸的Ga源,其中Ga源的一部分保持在相对高的温度,而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块,优选使用多个Al源,Al源被依次激活以避免Al源耗尽和过度降解。 为了实现高生长速率,优选使用双重生长区反应器,其中第一高温区用于晶体成核,第二低温区用于快速晶体生长。 虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体,但优选两个晶体结构具有相同的组成,从而产生改善的晶体质量。
    • 6. 发明申请
    • REACTOR FOR EXTENDED DURATION GROWTH OF GALLIUM CONTAINING SINGLE CRYSTALS
    • 含有单晶的玻璃的延长时间的增长反应
    • US20080022926A1
    • 2008-01-31
    • US11868880
    • 2007-10-08
    • Yuri MelnikVitali SoukhoveevVladimir IvantsovKatie TsvetkovVladimir Dmitriev
    • Yuri MelnikVitali SoukhoveevVladimir IvantsovKatie TsvetkovVladimir Dmitriev
    • C30B11/00
    • C30B25/00C30B25/02C30B29/403C30B29/406Y10T117/10Y10T117/1016
    • An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.
    • 提供一种用于生长体GaN和AlGaN单晶晶粒的装置,优选使用改进的HVPE工艺。 单晶晶粒通常具有超过4立方厘米的体积,最小尺寸约为1厘米。 如果需要,可以在生长期间掺杂大块材料以实现n,i-或p型导电性。 为了具有足够的持续时间的生长周期,优选使用延伸的Ga源,其中Ga源的一部分保持在相对高的温度,而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块,优选使用多个Al源,Al源被依次激活以避免Al源耗尽和过度降解。 为了实现高生长速率,优选使用双重生长区反应器,其中第一高温区用于晶体成核,第二低温区用于快速晶体生长。 虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体,但优选两个晶体结构具有相同的组成,从而产生改善的晶体质量。
    • 7. 发明申请
    • Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
    • 制造无裂纹III族氮化物半导体材料的方法和装置
    • US20050142391A1
    • 2005-06-30
    • US10778633
    • 2004-02-13
    • Vladimir DmitrievYuri Melnik
    • Vladimir DmitrievYuri Melnik
    • C30B25/00B32B9/00C23C16/00
    • C30B25/00C30B25/02C30B29/403Y10S117/915
    • A method and apparatus for growing low defect, optically transparent, colorless, crack-free, substantially flat, single crystal Group III nitride epitaxial layers with a thickness of at least 10 microns is provided. These layers can be grown on large area substrates comprised of Si, SiC, sapphire, GaN, AlN, GaAs, AlGaN and others. In one aspect, the crack-free Group III nitride layers are grown using a modified HVPE technique. If desired, the shape and the stress of Group III nitride layers can be controlled, thus allowing concave, convex and flat layers to be controllably grown. After the growth of the Group III nitride layer is complete, the substrate can be removed and the freestanding Group III nitride layer used as a seed for the growth of a boule of Group III nitride material. The boule can be sliced into individual wafers for use in the fabrication of a variety of semiconductor structures (e.g., HEMTs, LEDs, etc.).
    • 提供了一种用于生长厚度至少为10微米的低缺陷,光学透明,无色,无裂纹,基本平坦的单晶III族氮化物外延层的方法和装置。 这些层可以在由Si,SiC,蓝宝石,GaN,AlN,GaAs,AlGaN等构成的大面积基板上生长。 在一个方面,使用改进的HVPE技术生长无裂纹的III族氮化物层。 如果需要,可以控制III族氮化物层的形状和应力,从而允许可控地生长凹面,凸面和平面层。 在III族氮化物层的生长完成之后,可以去除衬底,并且将独立的III族氮化物层用作用于生长III族氮化物材料的晶粒的种子。 可以将该小片切成单独的晶片,以用于制造各种半导体结构(例如,HEMT,LED等)。
    • 8. 发明申请
    • METHOD FOR ACHIEVING LOW DEFECT DENSITY ALGAN SINGLE CRYSTAL BOULES
    • 实现低缺陷密度单晶晶体的方法
    • US20090050913A2
    • 2009-02-26
    • US11134200
    • 2005-05-20
    • Yuri MELNIKVitali SOUKHOVEEVVladimir IVANTSOVKatie TSVETKOVVladimir DMITRIEV
    • Yuri MELNIKVitali SOUKHOVEEVVladimir IVANTSOVKatie TSVETKOVVladimir DMITRIEV
    • H01L33/00
    • C30B25/00C30B11/00C30B11/14C30B29/40C30B29/403C30B29/406H01L21/0237H01L21/02378H01L21/02389H01L21/0254H01L21/0262
    • A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.
    • 提供了一种用于生长体GaN和AlGaN单晶晶粒的方法,优选使用改进的HVPE工艺。 单晶晶粒通常具有超过4立方厘米的体积,最小尺寸约为1厘米。 如果需要,可以在生长期间掺杂大块材料以实现n,i-或p型导电性。 为了具有足够的持续时间的生长周期,优选使用延伸的Ga源,其中Ga源的一部分保持在相对高的温度,而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块,优选使用多个Al源,Al源被依次激活以避免Al源耗尽和过度降解。 为了实现高生长速率,优选使用双重生长区反应器,其中第一高温区用于晶体成核,第二低温区用于快速晶体生长。 虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体,但优选两个晶体结构具有相同的组成,从而产生改善的晶体质量。
    • 9. 发明申请
    • Method for achieving low defect density AlGaN single crystal boules
    • 实现低缺陷密度AlGaN单晶晶粒的方法
    • US20050212001A1
    • 2005-09-29
    • US11134200
    • 2005-05-20
    • Yuri MelnikVitali SoukhoveevVladimir IvantsovKatie TsvetkovVladimir Dmitriev
    • Yuri MelnikVitali SoukhoveevVladimir IvantsovKatie TsvetkovVladimir Dmitriev
    • C30B11/00C30B11/14C30B25/00C30B29/40H01L21/205H01L33/00
    • C30B25/00C30B11/00C30B11/14C30B29/40C30B29/403C30B29/406H01L21/0237H01L21/02378H01L21/02389H01L21/0254H01L21/0262
    • A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.
    • 提供了一种用于生长体GaN和AlGaN单晶晶粒的方法,优选使用改进的HVPE工艺。 单晶晶粒通常具有超过4立方厘米的体积,最小尺寸约为1厘米。 如果需要,可以在生长期间掺杂大块材料以实现n,i-或p型导电性。 为了具有足够的持续时间的生长周期,优选使用延伸的Ga源,其中Ga源的一部分保持在相对高的温度,而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块,优选使用多个Al源,Al源被依次激活以避免Al源耗尽和过度降解。 为了实现高生长速率,优选使用双重生长区反应器,其中第一高温区用于晶体成核,第二低温区用于快速晶体生长。 虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体,但优选两个晶体结构具有相同的组成,从而产生改善的晶体质量。