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1. 发明申请

US20090286063A2 METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE SEMICONDUCTOR MATERIALS 审中-公开
公开(公告)号：US20090286063A2
公开(公告)日：2009-11-19
申请号：US12235370
申请日：2008-09-22
申请人： Vladimir Dmitriev , Yuri Melnik
发明人： Vladimir Dmitriev , Yuri Melnik
IPC分类号： B32B9/00
CPC分类号： C30B25/00 , C30B25/02 , C30B29/403 , Y10S117/915
摘要： A method and apparatus for growing low defect, optically transparent, colorless, crack-free, substantially flat, single crystal Group III nitride epitaxial layers with a thickness of at least 10 microns is provided. These layers can be grown on large area substrates comprised of Si, SiC, sapphire, GaN, AlN, GaAs, AlGaN and others. In one aspect, the crack-free Group III nitride layers are grown using a modified HVPE technique. If desired, the shape and the stress of Group III nitride layers can be controlled, thus allowing concave, convex and flat layers to be controllably grown. After the growth of the Group III nitride layer is complete, the substrate can be removed and the freestanding Group III nitride layer used as a seed for the growth of a boule of Group III nitride material. The boule can be sliced into individual wafers for use in the fabrication of a variety of semiconductor structures (e.g., HEMTs, LEDs, etc.).

2. 发明申请

US20060280668A1 Method and apparatus for fabricating crack-free group III nitride semiconductor materials 审中-公开
标题翻译：制造无裂纹III族氮化物半导体材料的方法和装置
公开(公告)号：US20060280668A1
公开(公告)日：2006-12-14
申请号：US11483455
申请日：2006-07-10
申请人： Vladimir Dmitriev , Yuri Melnik
发明人： Vladimir Dmitriev , Yuri Melnik
IPC分类号： C01B21/072
CPC分类号： C30B25/00 , C30B25/02 , C30B29/403 , Y10S117/915
摘要： A method and apparatus for growing low defect, optically transparent, colorless, crack-free, substantially flat, single crystal Group III nitride epitaxial layers with a thickness of at least 10 microns is provided. These layers can be grown on large area substrates comprised of Si, SiC, sapphire, GaN, AlN, GaAs, AlGaN and others. In one aspect, the crack-free Group III nitride layers are grown using a modified HVPE technique. If desired, the shape and the stress of Group III nitride layers can be controlled, thus allowing concave, convex and flat layers to be controllably grown. After the growth of the Group III nitride layer is complete, the substrate can be removed and the freestanding Group III nitride layer used as a seed for the growth of a boule of Group III nitride material. The boule can be sliced into individual wafers for use in the fabrication of a variety of semiconductor structures (e.g., HEMTs, LEDs, etc.).
摘要翻译：提供了一种用于生长厚度至少为10微米的低缺陷，光学透明，无色，无裂纹，基本平坦的单晶III族氮化物外延层的方法和装置。这些层可以在由Si，SiC，蓝宝石，GaN，AlN，GaAs，AlGaN等构成的大面积基板上生长。在一个方面，使用改进的HVPE技术生长无裂纹的III族氮化物层。如果需要，可以控制III族氮化物层的形状和应力，从而允许可控地生长凹面，凸面和平面层。在III族氮化物层的生长完成之后，可以去除衬底，并且将独立的III族氮化物层用作用于生长III族氮化物材料的晶粒的种子。可以将该小片切成单独的晶片，以用于制造各种半导体结构（例如，HEMT，LED等）。

3. 发明申请

US20050244997A1 Bulk GaN and AIGaN single crystals 审中-公开
标题翻译：大块GaN和AIGaN单晶
公开(公告)号：US20050244997A1
公开(公告)日：2005-11-03
申请号：US11114414
申请日：2005-04-26
申请人： Yuri Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir Dmitriev
发明人： Yuri Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir Dmitriev
IPC分类号： C30B25/00 , H01L21/00
CPC分类号： C30B29/406 , C30B25/18 , C30B29/403
摘要： Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.
摘要翻译：提供了优选使用改进的HVPE工艺制造的块状GaN和AlGaN单晶晶粒。单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。如果需要，本体材料可以在生长期间掺杂，例如以实现n，i-或p型导电性。

4. 发明申请

US20050056222A1 Reactor for extended duration growth of gallium containing single crystals 有权
标题翻译：含镓单晶长时间生长反应器
公开(公告)号：US20050056222A1
公开(公告)日：2005-03-17
申请号：US10632736
申请日：2003-08-01
申请人： Yuri Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir Dmitriev
发明人： Yuri Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir Dmitriev
IPC分类号： C30B25/00 , C23C16/00
CPC分类号： C30B25/00 , C30B25/02 , C30B29/403 , C30B29/406 , Y10T117/10 , Y10T117/1016
摘要： An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.
摘要翻译：提供一种用于生长体GaN和AlGaN单晶晶粒的装置，优选使用改进的HVPE工艺。单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。如果需要，可以在生长期间掺杂大块材料以实现n，i-或p型导电性。为了具有足够的持续时间的生长周期，优选使用延伸的Ga源，其中Ga源的一部分保持在相对高的温度，而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块，优选使用多个Al源，Al源被依次激活以避免Al源耗尽和过度降解。为了实现高生长速率，优选使用双重生长区反应器，其中第一高温区用于晶体成核，第二低温区用于快速晶体生长。虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体，但优选两个晶体结构具有相同的组成，从而产生改善的晶体质量。

5. 发明授权

US07157058B2 High power ultrasonic reactor for sonochemical applications 有权
标题翻译：用于声化学应用的大功率超声波反应器
公开(公告)号：US07157058B2
公开(公告)日：2007-01-02
申请号：US10767955
申请日：2004-01-29
申请人： Evgeny Marhasin , Marina Grintzova , Vicktor Pekker , Yuri Melnik
发明人： Evgeny Marhasin , Marina Grintzova , Vicktor Pekker , Yuri Melnik
IPC分类号： B06B1/00
CPC分类号： B82Y30/00 , B01J8/40 , B01J19/10 , B01J2219/0877 , B01J2219/0879 , B06B3/00 , B22F1/0018 , B22F9/24 , B22F2999/00 , C01B13/36 , C01G49/06 , C01G53/02 , C01P2004/64 , C01P2006/10 , C01P2006/12 , C01P2006/60 , C09C1/24 , B22F2202/01
摘要： Ultrasound device having a reaction chamber, which includes a magnetostrictive transducer and a horn transmitting ultrasound radiation substantially uniformly throughout the reaction chamber. The horn is hollow and is constituted by a cylinder having an empty inner chamber at its core defining a resonance chamber, which may be cylindrical and may comprise a plurality of sections of cylindrical shape or a central section of larger diameter and two terminal sections of smaller diameter.
摘要翻译：超声装置具有反应室，其包括磁致伸缩换能器和在整个反应室内基本上均匀地透射超声辐射的喇叭。喇叭是中空的，并且由其内部具有空的内室的圆筒构成，该圆筒形成共振室，该共振室可以是圆柱形的，并且可以包括多个圆柱形部分或较大直径的中心部分和较小直径的两个终端部分直径。

6. 发明申请

US20080022926A1 REACTOR FOR EXTENDED DURATION GROWTH OF GALLIUM CONTAINING SINGLE CRYSTALS 有权
标题翻译：含有单晶的玻璃的延长时间的增长反应
公开(公告)号：US20080022926A1
公开(公告)日：2008-01-31
申请号：US11868880
申请日：2007-10-08
申请人： Yuri Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir Dmitriev
发明人： Yuri Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir Dmitriev
IPC分类号： C30B11/00
CPC分类号： C30B25/00 , C30B25/02 , C30B29/403 , C30B29/406 , Y10T117/10 , Y10T117/1016
摘要： An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.
摘要翻译：提供一种用于生长体GaN和AlGaN单晶晶粒的装置，优选使用改进的HVPE工艺。单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。如果需要，可以在生长期间掺杂大块材料以实现n，i-或p型导电性。为了具有足够的持续时间的生长周期，优选使用延伸的Ga源，其中Ga源的一部分保持在相对高的温度，而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块，优选使用多个Al源，Al源被依次激活以避免Al源耗尽和过度降解。为了实现高生长速率，优选使用双重生长区反应器，其中第一高温区用于晶体成核，第二低温区用于快速晶体生长。虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体，但优选两个晶体结构具有相同的组成，从而产生改善的晶体质量。

7. 发明申请

US20050142391A1 Method and apparatus for fabricating crack-free Group III nitride semiconductor materials 有权
标题翻译：制造无裂纹III族氮化物半导体材料的方法和装置
公开(公告)号：US20050142391A1
公开(公告)日：2005-06-30
申请号：US10778633
申请日：2004-02-13
申请人： Vladimir Dmitriev , Yuri Melnik
发明人： Vladimir Dmitriev , Yuri Melnik
IPC分类号： C30B25/00 , B32B9/00 , C23C16/00
CPC分类号： C30B25/00 , C30B25/02 , C30B29/403 , Y10S117/915
摘要： A method and apparatus for growing low defect, optically transparent, colorless, crack-free, substantially flat, single crystal Group III nitride epitaxial layers with a thickness of at least 10 microns is provided. These layers can be grown on large area substrates comprised of Si, SiC, sapphire, GaN, AlN, GaAs, AlGaN and others. In one aspect, the crack-free Group III nitride layers are grown using a modified HVPE technique. If desired, the shape and the stress of Group III nitride layers can be controlled, thus allowing concave, convex and flat layers to be controllably grown. After the growth of the Group III nitride layer is complete, the substrate can be removed and the freestanding Group III nitride layer used as a seed for the growth of a boule of Group III nitride material. The boule can be sliced into individual wafers for use in the fabrication of a variety of semiconductor structures (e.g., HEMTs, LEDs, etc.).
摘要翻译：提供了一种用于生长厚度至少为10微米的低缺陷，光学透明，无色，无裂纹，基本平坦的单晶III族氮化物外延层的方法和装置。这些层可以在由Si，SiC，蓝宝石，GaN，AlN，GaAs，AlGaN等构成的大面积基板上生长。在一个方面，使用改进的HVPE技术生长无裂纹的III族氮化物层。如果需要，可以控制III族氮化物层的形状和应力，从而允许可控地生长凹面，凸面和平面层。在III族氮化物层的生长完成之后，可以去除衬底，并且将独立的III族氮化物层用作用于生长III族氮化物材料的晶粒的种子。可以将该小片切成单独的晶片，以用于制造各种半导体结构（例如，HEMT，LED等）。

8. 发明申请

US20090050913A2 METHOD FOR ACHIEVING LOW DEFECT DENSITY ALGAN SINGLE CRYSTAL BOULES 有权
标题翻译：实现低缺陷密度单晶晶体的方法
公开(公告)号：US20090050913A2
公开(公告)日：2009-02-26
申请号：US11134200
申请日：2005-05-20
申请人： Yuri MELNIK , Vitali SOUKHOVEEV , Vladimir IVANTSOV , Katie TSVETKOV , Vladimir DMITRIEV
发明人： Yuri MELNIK , Vitali SOUKHOVEEV , Vladimir IVANTSOV , Katie TSVETKOV , Vladimir DMITRIEV
IPC分类号： H01L33/00
CPC分类号： C30B25/00 , C30B11/00 , C30B11/14 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02378 , H01L21/02389 , H01L21/0254 , H01L21/0262
摘要： A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.
摘要翻译：提供了一种用于生长体GaN和AlGaN单晶晶粒的方法，优选使用改进的HVPE工艺。单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。如果需要，可以在生长期间掺杂大块材料以实现n，i-或p型导电性。为了具有足够的持续时间的生长周期，优选使用延伸的Ga源，其中Ga源的一部分保持在相对高的温度，而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块，优选使用多个Al源，Al源被依次激活以避免Al源耗尽和过度降解。为了实现高生长速率，优选使用双重生长区反应器，其中第一高温区用于晶体成核，第二低温区用于快速晶体生长。虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体，但优选两个晶体结构具有相同的组成，从而产生改善的晶体质量。

9. 发明申请

US20050212001A1 Method for achieving low defect density AlGaN single crystal boules 有权
标题翻译：实现低缺陷密度AlGaN单晶晶粒的方法
公开(公告)号：US20050212001A1
公开(公告)日：2005-09-29
申请号：US11134200
申请日：2005-05-20
申请人： Yuri Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir Dmitriev
发明人： Yuri Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir Dmitriev
IPC分类号： C30B11/00 , C30B11/14 , C30B25/00 , C30B29/40 , H01L21/205 , H01L33/00
CPC分类号： C30B25/00 , C30B11/00 , C30B11/14 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02378 , H01L21/02389 , H01L21/0254 , H01L21/0262
摘要： A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.
摘要翻译：提供了一种用于生长体GaN和AlGaN单晶晶粒的方法，优选使用改进的HVPE工艺。单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。如果需要，可以在生长期间掺杂大块材料以实现n，i-或p型导电性。为了具有足够的持续时间的生长周期，优选使用延伸的Ga源，其中Ga源的一部分保持在相对高的温度，而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块，优选使用多个Al源，Al源被依次激活以避免Al源耗尽和过度降解。为了实现高生长速率，优选使用双重生长区反应器，其中第一高温区用于晶体成核，第二低温区用于快速晶体生长。虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体，但优选两个晶体结构具有相同的组成，从而产生改善的晶体质量。

10. 发明申请

US20050164044A1 Bulk GaN and AlGaN single crystals 审中-公开
标题翻译：块状GaN和AlGaN单晶
公开(公告)号：US20050164044A1
公开(公告)日：2005-07-28
申请号：US11083609
申请日：2005-03-18
申请人： Yuri Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir Dmitriev
发明人： Yuri Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir Dmitriev
IPC分类号： C30B25/00 , B32B19/00
CPC分类号： C30B29/406 , C30B25/18 , C30B29/403
摘要： Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.
摘要翻译：提供优选使用改进的HVPE工艺制造的块状GaN和AlGaN单晶晶粒。单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。如果需要，本体材料可以在生长期间掺杂，例如以实现n，i-或p型导电性。

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