专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110108954A1 Growth of Planar Non-Polar M-Plane Gallium Nitride With Hydride Vapor Phase Epitaxy (HVPE) 有权
标题翻译：平面非极性M平面氮化镓与氢化物气相外延生长（HVPE）
公开(公告)号：US20110108954A1
公开(公告)日：2011-05-12
申请号：US12614313
申请日：2009-11-06
申请人： Philippe Spiberg , Hussein S. El-Ghoroury , Alexander Usikov , Alexander Syrkin , Bernard Scanlan , Vitali Soukhoveev
发明人： Philippe Spiberg , Hussein S. El-Ghoroury , Alexander Usikov , Alexander Syrkin , Bernard Scanlan , Vitali Soukhoveev
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： C30B25/183 , C30B25/186 , C30B29/403
摘要： A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE. Various alternative methods are disclosed.
摘要翻译：生长平面非极性m面III氮化物材料的方法，例如m面氮化镓（GaN）外延层，其中III-氮化物材料在合适的衬底上生长，例如m面蓝宝石底物，采用氢化物气相外延（HVPE）。该方法包括在氨和氩的环境中在升高的温度下原位预处理衬底，在退火的衬底上生长诸如氮化铝（AlN）或铝 - 氮化镓（AlGaN）的中间层，使用HVPE在中间层上的极性m面III-氮化物外延层。公开了各种替代方法。

2. 发明申请

US20080257256A1 BULK GaN AND AlGaN SINGLE CRYSTALS 有权
标题翻译： BULK GaN和AlGaN单晶
公开(公告)号：US20080257256A1
公开(公告)日：2008-10-23
申请号：US12141944
申请日：2008-06-19
申请人： Yuri V. MELNIK , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir A. Dmitriev
发明人： Yuri V. MELNIK , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir A. Dmitriev
IPC分类号： C30B23/00
CPC分类号： C30B29/406 , C30B25/18 , C30B29/403
摘要： Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.
摘要翻译：提供优选使用改进的HVPE工艺制造的块状GaN和AlGaN单晶晶粒。单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。如果需要，本体材料可以在生长期间掺杂，例如以实现n，i-或p型导电性。

3. 发明申请

US20070032046A1 Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby 审中-公开
标题翻译：在单个外延生长运行期间同时生产多个晶片的方法以及由此生长的半导体结构
公开(公告)号：US20070032046A1
公开(公告)日：2007-02-08
申请号：US11173193
申请日：2005-07-01
申请人： Vladimir Dmitriev , Viacheslav Maslennikov , Vitali Soukhoveev , Oleg Kovalenkov
发明人： Vladimir Dmitriev , Viacheslav Maslennikov , Vitali Soukhoveev , Oleg Kovalenkov
IPC分类号： H01L21/20
CPC分类号： C30B25/02 , C30B25/00 , C30B25/14 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： HVPE method for simultaneously fabricating multiple Group III nitride semiconductor structures during a single reactor run. A HVPE reactor includes a reactor tube, a growth zone, a heating element and a plurality of gas blocks. A substrate holder is capable of holding multiple substrates and can be a single or multi-level substrate holder. The gas delivery blocks are independently controllable. Gas flows from the delivery blocks are mixed to provide a substantially uniform gas environment within the growth zone. The substrate holder can be controlled, e.g., rotated and/or tilted, for uniform material growth. Multiple Group III nitride semiconductor structures can be grown on each substrate during a single fabrication run of the HVPE reactor. Growth on different substrates is substantially uniform and can be performed on larger area substrates, such as 3-12″ substrates.
摘要翻译： HVPE方法，用于在单个反应器运行期间同时制造多个III族氮化物半导体结构。 HVPE反应器包括反应器管，生长区，加热元件和多个气体块。衬底保持器能够保持多个衬底，并且可以是单层或多层衬底保持器。气体输送块是独立可控的。从输送块流出的气体被混合以在生长区内提供基本均匀的气体环境。可以控制衬底保持器，例如旋转和/或倾斜，以使材料均匀生长。在HVPE反应器的单个制造运行期间，可以在每个衬底上生长多个III族氮化物半导体结构。不同基底上的生长基本上是均匀的，并且可以在较大面积的基底（例如3-12“基底）上进行。

4. 发明授权

US06656285B1 Reactor for extended duration growth of gallium containing single crystals 有权
公开(公告)号：US06656285B1
公开(公告)日：2003-12-02
申请号：US09903299
申请日：2001-07-11
申请人： Yuri V. Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir A. Dmitriev
发明人： Yuri V. Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir A. Dmitriev
IPC分类号： C23C1600
CPC分类号： C30B25/00 , C30B25/02 , C30B29/403 , C30B29/406 , Y10T117/10 , Y10T117/1016
摘要： An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.

5. 发明申请

US20090286331A2 METHOD FOR SIMULATENOUSLY PRODUCING MULTIPLE WAFERS DURING A SINGLE EPITAXIAL GROWTH RUN AND SEMICONDUCTOR STRUCTURE GROWN THEREBY 审中-公开
标题翻译：在单个外延生长运行期间模拟生成多个波形的方法及其半导体结构
公开(公告)号：US20090286331A2
公开(公告)日：2009-11-19
申请号：US12267711
申请日：2008-11-10
申请人： Vladimir Dmitriev , Viacheslav Maslennikov , Vitali Soukhoveev , Oleg Kovalenkov
发明人： Vladimir Dmitriev , Viacheslav Maslennikov , Vitali Soukhoveev , Oleg Kovalenkov
IPC分类号： H01L21/205
CPC分类号： C30B25/02 , C30B25/00 , C30B25/14 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： HVPE method for simultaneously fabricating multiple Group III nitride semiconductor structures during a single reactor run. A HVPE reactor includes a reactor tube, a growth zone, a heating element and a plurality of gas blocks. A substrate holder is capable of holding multiple substrates and can be a single or multi-level substrate holder. The gas delivery blocks are independently controllable. Gas flows from the delivery blocks are mixed to provide a substantially uniform gas environment within the growth zone. The substrate holder can be controlled, e.g., rotated and/or tilted, for uniform material growth. Multiple Group III nitride semiconductor structures can be grown on each substrate during a single fabrication run of the HVPE reactor. Growth on different substrates is substantially uniform and can be performed on larger area substrates, such as 3-12″ substrates.
摘要翻译： HVPE方法，用于在单个反应器运行期间同时制造多个III族氮化物半导体结构。 HVPE反应器包括反应器管，生长区，加热元件和多个气体块。衬底保持器能够保持多个衬底，并且可以是单层或多层衬底保持器。气体输送块是独立可控的。从输送块流出的气体被混合以在生长区内提供基本均匀的气体环境。可以控制衬底保持器，例如旋转和/或倾斜，以使材料均匀生长。在HVPE反应器的单个制造运行期间，可以在每个衬底上生长多个III族氮化物半导体结构。不同基底上的生长基本上是均匀的，并且可以在较大面积的基底（例如3-12“基底）上进行。

6. 发明申请

US20050244997A1 Bulk GaN and AIGaN single crystals 审中-公开
标题翻译：大块GaN和AIGaN单晶
公开(公告)号：US20050244997A1
公开(公告)日：2005-11-03
申请号：US11114414
申请日：2005-04-26
申请人： Yuri Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir Dmitriev
发明人： Yuri Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir Dmitriev
IPC分类号： C30B25/00 , H01L21/00
CPC分类号： C30B29/406 , C30B25/18 , C30B29/403
摘要： Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.
摘要翻译：提供了优选使用改进的HVPE工艺制造的块状GaN和AlGaN单晶晶粒。单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。如果需要，本体材料可以在生长期间掺杂，例如以实现n，i-或p型导电性。

7. 发明申请

US20050056222A1 Reactor for extended duration growth of gallium containing single crystals 有权
标题翻译：含镓单晶长时间生长反应器
公开(公告)号：US20050056222A1
公开(公告)日：2005-03-17
申请号：US10632736
申请日：2003-08-01
申请人： Yuri Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir Dmitriev
发明人： Yuri Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir Dmitriev
IPC分类号： C30B25/00 , C23C16/00
CPC分类号： C30B25/00 , C30B25/02 , C30B29/403 , C30B29/406 , Y10T117/10 , Y10T117/1016
摘要： An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.
摘要翻译：提供一种用于生长体GaN和AlGaN单晶晶粒的装置，优选使用改进的HVPE工艺。单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。如果需要，可以在生长期间掺杂大块材料以实现n，i-或p型导电性。为了具有足够的持续时间的生长周期，优选使用延伸的Ga源，其中Ga源的一部分保持在相对高的温度，而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块，优选使用多个Al源，Al源被依次激活以避免Al源耗尽和过度降解。为了实现高生长速率，优选使用双重生长区反应器，其中第一高温区用于晶体成核，第二低温区用于快速晶体生长。虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体，但优选两个晶体结构具有相同的组成，从而产生改善的晶体质量。

8. 发明授权

US08372199B2 Bulk GaN and AlGaN single crystals 有权
公开(公告)号：US08372199B2
公开(公告)日：2013-02-12
申请号：US12141944
申请日：2008-06-19
申请人： Yuri V. Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir A. Dmitriev
发明人： Yuri V. Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir A. Dmitriev
IPC分类号： C30B21/02
CPC分类号： C30B29/406 , C30B25/18 , C30B29/403
摘要： Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.

9. 发明授权

US08092596B2 Bulk GaN and AlGaN single crystals 有权
标题翻译：块状GaN和AlGaN单晶
公开(公告)号：US08092596B2
公开(公告)日：2012-01-10
申请号：US12138487
申请日：2008-06-13
申请人： Yuri V. Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir A Dmitriev
发明人： Yuri V. Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir A Dmitriev
IPC分类号： C30B25/00
CPC分类号： C30B29/406 , C30B25/18 , C30B29/403
摘要： Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.
摘要翻译：提供了优选使用改进的HVPE工艺制造的块状GaN和AlGaN单晶晶粒。单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。如果需要，本体材料可以在生长期间掺杂，例如以实现n，i-或p型导电性。

10. 发明申请

US20080022926A1 REACTOR FOR EXTENDED DURATION GROWTH OF GALLIUM CONTAINING SINGLE CRYSTALS 有权
标题翻译：含有单晶的玻璃的延长时间的增长反应
公开(公告)号：US20080022926A1
公开(公告)日：2008-01-31
申请号：US11868880
申请日：2007-10-08
申请人： Yuri Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir Dmitriev
发明人： Yuri Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir Dmitriev
IPC分类号： C30B11/00
CPC分类号： C30B25/00 , C30B25/02 , C30B29/403 , C30B29/406 , Y10T117/10 , Y10T117/1016
摘要： An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.
摘要翻译：提供一种用于生长体GaN和AlGaN单晶晶粒的装置，优选使用改进的HVPE工艺。单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。如果需要，可以在生长期间掺杂大块材料以实现n，i-或p型导电性。为了具有足够的持续时间的生长周期，优选使用延伸的Ga源，其中Ga源的一部分保持在相对高的温度，而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块，优选使用多个Al源，Al源被依次激活以避免Al源耗尽和过度降解。为了实现高生长速率，优选使用双重生长区反应器，其中第一高温区用于晶体成核，第二低温区用于快速晶体生长。虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体，但优选两个晶体结构具有相同的组成，从而产生改善的晶体质量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式