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1. 发明授权

US06376692B1 Zirconium alkoxytris (&bgr;-Diketonate), process for manufacturing the same, and liquid composition for formation of PZT film 有权
标题翻译：烷氧基锆（β-二酮），其制造方法和用于形成PZT膜的液体组合物
公开(公告)号：US06376692B1
公开(公告)日：2002-04-23
申请号：US09680364
申请日：2000-10-05
申请人： Hidekimi Kadokura , Yumie Okuhara
发明人： Hidekimi Kadokura , Yumie Okuhara
IPC分类号： C07F700
CPC分类号： C23C16/409 , C07F7/003
摘要： There is provided a compound for the formation of a PZT film using Pb(dpm)2 where the compound has a low reactivity with Pb(dpm)2, has a thermal decomposition temperature which is lower than Zr(dpm)4 and is well soluble in a solvent such as butyl acetate and toluene. There is also provided a process for the manufacture of the compound. There is further provided a liquid composition for the formation of a PZT film using the compound. The novel compound Zr(OiPr)(dpm)3 has a sublimation pressure of 0.1 Torr/160° C. and is able to form a ZrO2 film by a CVD at 400° C. That can be prepared by the reaction of 1 mol of Zr(OiPr)4 and 3 mol of dpmH in an organic solvent followed by purifying by sublimation. A solution of Pb(dpm)2, Zr(OiPr)(dpm)3 and Ti(OiPr)2(dpm)2 dissolved in butyl acetate has a long pot life and forms a PZT film by a solution flash CVD method.
摘要翻译：提供了使用Pb（dpm）2形成PZT膜的化合物，其中化合物与Pb（dpm）2具有低反应性，具有低于Zr（dpm）4的热分解温度，并且是易溶解的在溶剂如乙酸丁酯和甲苯中。还提供了一种制备该化合物的方法。还提供了使用该化合物形成PZT膜的液体组合物。新型化合物Zr（OiPr）（dpm）3的升华压力为0.1托/ 160℃，能够通过CVD在400℃下形成ZrO 2膜。这可以通过将1摩尔 Zr（OiPr）4和3mol dpmH，然后升华纯化。溶解在乙酸丁酯中的Pb（dpm）2，Zr（OiPr）（dpm）3和Ti（OiPr）2（dpm）2的溶液具有长的适用期，并通过溶液闪速CVD法形成PZT膜。

2. 发明授权

US06930177B2 High-purity lanthanum isoproxide and a process for producing the same 失效
标题翻译：高纯度异丙酸镧及其制造方法
公开(公告)号：US06930177B2
公开(公告)日：2005-08-16
申请号：US10214338
申请日：2002-08-07
申请人： Hidekimi Kadokura , Masamichi Matsumoto , Tadashi Ishii , Yumie Okuhara , Yoshinori Kuboshima , Hiroshi Matsumoto
发明人： Hidekimi Kadokura , Masamichi Matsumoto , Tadashi Ishii , Yumie Okuhara , Yoshinori Kuboshima , Hiroshi Matsumoto
IPC分类号： C07C29/68 , C07C29/76 , C07C31/10 , C07C31/28 , C07F5/00
CPC分类号： C07C31/10 , C07C29/685 , C07C31/28
摘要： The invention provides true La(OiPr)3 preferable as a starting material for an asymmetric synthesis catalyst and a process for producing the same. In this process, anhydrous lanthanum chloride LaCl3 is reacted with potassium isopropoxide K(OiPr) in a mixed solvent of isopropanol and toluene, then the isopropanol is distilled away to replace all the solvent by toluene, then the reaction solution is left, decanted and filtered to give a transparent filtrate, and the solvent is distilled away from the filtrate which is then vacuum-dried under heating, whereby high-purity La(OiPr)3 is obtained in 77% yield. In this high-purity La(OiPr)3, the La content is 97 to 103% of the theoretical content, impurity K is 0.3% or less, (Li+Na) is 0.01% or less, Cl is 0.2% or less, and the degree of association thereof is 5.5 to 6.5.
摘要翻译：本发明提供了作为不对称合成催化剂的起始原料的真正的La（OiPr）3 N 3及其制造方法。在该方法中，将无水氯化镧LaCl 3与异丙醇钾（OiPr）在异丙醇和甲苯的混合溶剂中反应，然后蒸除异丙醇以用甲苯代替所有溶剂，然后反应溶液倒出并过滤，得到透明滤液，从滤液中蒸除溶剂，然后加热真空干燥，得到高纯度La（OiPr）3 N 收益率77％。在该高纯度La（OiPr）3 N 3中，La含量为理论含量的97〜103％，杂质K为0.3％以下，（Li + Na）为0.01％以下， Cl为0.2％以下，结合度为5.5〜6.5。

3. 发明授权

US06469189B1 Liquid double alkoxide of niobium or tantalum and alkaline earth metal, production method thereof, and production method of complex metal oxide dielectric using it 有权
标题翻译：铌或钽和碱土金属的液体双重醇盐，其制备方法和使用它的复合金属氧化物电介质的制备方法
公开(公告)号：US06469189B1
公开(公告)日：2002-10-22
申请号：US09506140
申请日：2000-02-17
申请人： Hidekimi Kadokura , Yumie Okuhara
发明人： Hidekimi Kadokura , Yumie Okuhara
IPC分类号： C07F1900
CPC分类号： C04B35/495 , C07F9/005 , C23C16/40 , H01L21/31691
摘要： A novel compound shown by M[N(OC2H5)5(OC2H4OCH3)]2, wherein M represents Sr or Ba, N represents Nb or Ta, which is a liquid at room temperature, is hard to be thermally dissociated, and has a vapor pressure of about 0.2 Torr at 190° C. The compound is produced by reacting 2 moles of N(OC2H5)5 and from 1 to 1.1 moles of M(OC2H4OCH3)2 and then recovering the product by distillation. By using the compounds as raw materials for a CVD method, an SrBi2Ta2O9 thin film or a (Sr0.75Ba0.25)Nb2O6 thin film for semiconductor devices can be produced.
摘要翻译：由M [N（OC2H5）5（OC2H4OCH3）] 2表示的新化合物，其中M表示Sr或Ba，N表示在室温下为液体的Nb或Ta难以热解离，并且具有蒸气在190℃下约0.2托的压力。该化合物通过使2摩尔N（OC 2 H 5）5和1至1.1摩尔M（OC 2 H 4 OCH 3）2反应制备，然后通过蒸馏回收产物。通过使用化合物作为CVD法的原料，可以制造用于半导体器件的SrBi 2 Ta 2 O 9薄膜或（Sr 0.75 Ba 0.25）Nb 2 O 6薄膜。

4. 发明授权

US6046345A Barium strontium .beta.-diketonates, processes for producing the same and processes for producing barium strontium-containing oxide dielectric films with the use of the same 失效
标题翻译：锶钡 - 二酮化合物，其制备方法以及使用其制备含钡锶氧化物介电膜的方法
公开(公告)号：US6046345A
公开(公告)日：2000-04-04
申请号：US252046
申请日：1999-02-17
申请人： Hidekimi Kadokura , Yumie Okuhara
发明人： Hidekimi Kadokura , Yumie Okuhara
IPC分类号： C07F3/00 , C23C16/40 , C23C16/06
CPC分类号： C07F3/003 , C23C16/409
摘要： Novel one-source compounds for producing (Ba,Sr)TiO.sub.3 films having high dielectric constants and ferroelectric (Sr,Ba)Nb.sub.2 O.sub.6 films by the CVD method, which are in the form of a liquid at the source temperature and contain Ba and Sr at a specified ratio; processes for producing these novel compounds; and processes for producing films by using the same.Because of having a melting point of 160.degree. C., being in the form of a liquid and having enough vapor pressure at 200.degree. C., the novel compounds barium strontium .beta.-diketonate [Ba.sub.2 Sr(dpm).sub.6 and BaSr.sub.2 (dpm).sub.6 ] can be quantitatively supplied by gas bubbling as a feedstock in the CVD method while maintaining the Ba/Sr ratio at a constant ratio. Thus, barium strontium-containing oxide dielectric films can be produced at a high reproducibility by thermal decomposition on a substrate in an oxidative atmosphere. These compounds can be produced by reacting dpmh with Ba and Sr, Ba(dpm).sub.2 with Sr(dpm).sub.2, or dpmH with Ba and Sr(dpm).sub.2 and then subjecting either of the reaction products thus obtained to high-vacuum distillation.
摘要翻译：用于通过CVD法制备具有高介电常数的（Ba，Sr）TiO 3膜和铁电（Sr，Ba）Nb 2 O 6膜的新型单源化合物，其以源温度为液态并含有Ba和Sr 指定比例; 制备这些新化合物的方法; 以及使用该膜的方法。由于熔点为160℃，呈液体形式，在200℃下具有足够的蒸气压，新型化合物β-benzobenzonate [Ba2Sr（dpm）6和BaSr2（dpm）6 ]可以通过气相鼓泡作为原料在CVD法中定量提供，同时保持Ba / Sr比率恒定的比例。因此，可以通过在氧化气氛中的基板上的热分解以高再现性制造含钡锶氧化物电介质膜。这些化合物可以通过使dpmh与Ba和Sr，Ba（dpm）2与Sr（dpm）2或dpmH与Ba和Sr（dpm）2反应，然后使所得到的任一种反应产物进行高真空蒸馏。

5. 发明授权

US06872419B2 Method or process for producing PZT films at low substrate temperatures by chemical vapor deposition 失效
标题翻译：通过化学气相沉积在低衬底温度下生产PZT膜的方法或工艺
公开(公告)号：US06872419B2
公开(公告)日：2005-03-29
申请号：US10318719
申请日：2002-12-13
申请人： Hidekimi Kadokura , Yumie Okuhara
发明人： Hidekimi Kadokura , Yumie Okuhara
IPC分类号： C07F7/00 , C07F7/24 , C07F7/28 , C23C16/18 , C23C16/40 , H01L21/316 , B05D5/12
CPC分类号： H01L21/02271 , C23C16/409 , H01L21/02197 , H01L21/31691
摘要： A method or process for producing PZT films by using a Ti material having a broad allowable temperature range for providing a predetermined film composition, easily thermally deposited from Ti(OiPr)2(dibm)2 at a low substrate temperature of 450° C. or less in CVD. Starting materials are fed in a solution vaporization system. The starting materials, Ti (OiPr)2(dibm)2, used as a T1 source, and a combination of Pb(dpm)2-Zr(Oipr)(dpm)3-Ti(OiPr)2(dibm)2 in n-butyl acetate are vaporized and supplied at 200° C. The vaporized starting materials are fed into a chamber and subjected to CVD at a substrate temperature of 420° C. at 1 Torr in an oxygen atmosphere, whereby excellent PZT films can be produced. Ti(OiPr)2(dibm)2 has a melting point of 105° C., a high solubility and a vapor pressure of 1 Torr/150° C. and does not react with Pb(dpm)2, and a solution thereof in n-butyl acetate has a pot life of 3 months.
摘要翻译：通过使用具有宽的允许温度范围的Ti材料制备PZT膜的方法或工艺，用于提供预定的膜组合物，在450℃的低基板温度下容易地由Ti（OiPr）2（dibm）2热沉积，或者 CVD中较少。原料在溶液蒸发系统中进料。用作T1源的原料Ti（OiPr）2（dibm）2，以及n（n）中的Pb（dpm）2-Zr（Oipr）（dpm）3-Ti（OiPr）2（dibm）乙酸丁酯蒸发并在200℃下供应。将蒸发的原料进料到室中，并在氧气氛中在1乇的基板温度为420℃下进行CVD，由此可以生产出优异的PZT膜。 Ti（OiPr）2（dibm）2的熔点为105℃，溶解度高，蒸气压为1Torr / 150℃，不与Pb（dpm）2反应，乙酸正丁酯的使用期限为3个月。

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