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1. 发明申请

US20080025373A1 Temperature detecting device 有权
标题翻译：温度检测装置
公开(公告)号：US20080025373A1
公开(公告)日：2008-01-31
申请号：US11785275
申请日：2007-04-17
申请人： Inao Toyoda , Yukihiro Katoh
发明人： Inao Toyoda , Yukihiro Katoh
IPC分类号： G01K5/66 , G01K5/72
CPC分类号： G01K13/02 , G01K5/48 , G01K5/62 , G01K2205/04
摘要： A temperature detecting device includes a heat receiving plate, a displacement transmitting part, a deforming part, a deformation generating part and a displacement detecting part. The heat receiving plate is restrained at its rim portion to generate a displacement of a central portion in its thickness direction with respect to the rim portion in accordance with the temperature of an atmospheric gas. The displacement transmitting part is displaced in accordance with the displacement of the central portion of the heat receiving plate. The deforming part is deformed by the displacement transmitting part. The deformation generating part maintains a distance between the rim portion of the heat receiving plate and the deforming part. The displacement detecting part detects a deformation of the deforming part and outputs an electric signal.
摘要翻译：温度检测装置包括受热板，位移传递部分，变形部分，变形产生部分和位移检测部分。受热板被限制在其边缘部分处，以根据大气气体的温度产生相对于边缘部分在其厚度方向上的中心部分的位移。位移传递部分根据受热板的中心部分的位移而移位。变形部由位移传递部变形。变形产生部件保持热接收板的边缘部分和变形部分之间的距离。位移检测部检测变形部的变形并输出电信号。

2. 发明授权

US07540658B2 Temperature detecting device 有权
标题翻译：温度检测装置
公开(公告)号：US07540658B2
公开(公告)日：2009-06-02
申请号：US11785275
申请日：2007-04-17
申请人： Inao Toyoda , Yukihiro Katoh
发明人： Inao Toyoda , Yukihiro Katoh
IPC分类号： G01K5/66
CPC分类号： G01K13/02 , G01K5/48 , G01K5/62 , G01K2205/04
摘要： A temperature detecting device includes a heat receiving plate, a displacement transmitting part, a deforming part, a deformation generating part and a displacement detecting part. The heat receiving plate is restrained at its rim portion to generate a displacement of a central portion in its thickness direction with respect to the rim portion in accordance with the temperature of an atmospheric gas. The displacement transmitting part is displaced in accordance with the displacement of the central portion of the heat receiving plate. The deforming part is deformed by the displacement transmitting part. The deformation generating part maintains a distance between the rim portion of the heat receiving plate and the deforming part. The displacement detecting part detects a deformation of the deforming part and outputs an electric signal.
摘要翻译：温度检测装置包括受热板，位移传递部分，变形部分，变形产生部分和位移检测部分。受热板被限制在其边缘部分处，以根据大气气体的温度产生相对于边缘部分在其厚度方向上的中心部分的位移。位移传递部分根据受热板的中心部分的位移而移位。变形部由位移传递部变形。变形产生部件保持热接收板的边缘部分和变形部分之间的距离。位移检测部检测变形部的变形并输出电信号。

3. 发明授权

US07005673B2 ITO film-formed substrate, and manufacturing method thereof 失效
标题翻译： ITO膜形成基板及其制造方法
公开(公告)号：US07005673B2
公开(公告)日：2006-02-28
申请号：US10754249
申请日：2004-01-09
申请人： Shogo Kiyota , Yukihiro Katoh
发明人： Shogo Kiyota , Yukihiro Katoh
IPC分类号： H01L35/24
CPC分类号： G02F1/13439 , G02F1/133514 , G02F2001/133519
摘要： An ITO film-formed substrate having excellent alkali resistance and adhesion is provided. For the ITO film-formed substrate, a structure is adopted in which a color filter 102, an organic protective film 103, intermediate layers 104a and 104b, and an ITO film 105 having an electrode pattern patterned therein are formed in this order from the bottom upwards on a surface of a glass substrate 101. The intermediate layer 104a is deposited on a surface of the organic protective film 103 through a high-frequency sputtering method using Ar as an introduced gas, and is made of a metal oxide that is not prone to dissolving in alkalis; the intermediate layer 104b is deposited through a reactive sputtering method or a high-frequency sputtering method, and is made of a metal oxide or metal nitride that is not prone to dissolving in alkalis.
摘要翻译：提供了具有优异的耐碱性和粘附性的ITO膜形成基材。对于ITO膜形成的基板，采用以下结构，其中以其顺序形成滤色器102，有机保护膜103，中间层104a和104b以及其中形成图案的电极图案的ITO膜105 在玻璃基板101的表面上向下的底部。中间层104a通过使用Ar作为引入气体的高频溅射法沉积在有机保护膜103的表面上，并且由不容易溶解在碱中的金属氧化物制成; 中间层104b通过反应溅射法或高频溅射法沉积，并且由不容易溶解在碱中的金属氧化物或金属氮化物制成。

4. 发明授权

US06685805B2 Method of manufacturing substrate having transparent conductive film, substrate having transparent conductive film manufactured using the method, and touch panel using the substrate 有权
标题翻译：制造具有透明导电膜的基板的方法，使用该方法制造的具有透明导电膜的基板和使用该基板的触摸面板
公开(公告)号：US06685805B2
公开(公告)日：2004-02-03
申请号：US09909570
申请日：2001-07-20
申请人： Shogo Kiyota , Yukihiro Katoh
发明人： Shogo Kiyota , Yukihiro Katoh
IPC分类号： C23C1434
CPC分类号： G06F3/045 , C23C14/086 , H01B1/08 , H01H13/785 , H01H2201/028 , H01H2209/084
摘要： In a method of manufacturing a substrate having a transparent conductive film in which sputtering is carried out on a transparent insulating substrate using an indium oxide/tin oxide target under an atmosphere of a mixed gas containing argon and oxygen, when the ratio of oxygen to argon in the mixed gas is in a suitable range of 0.016 to 0.018, the carrier density of the transparent conductive film becomes a maximum, while the mobility rises progressively as the ratio of oxygen to argon increases. The surface resistance of the transparent conductive film, that is the reciprocal of the product of the carrier density and the mobility, 1/(carrier density×mobility), takes a minimum value when the ratio of oxygen to argon is in the above suitable range. In this case, crystallization of the film is promoted and the percentage change between the surface resistance of the film before heat treatment and the surface resistance of the film after heat treatment can be kept down to within ±10%.
摘要翻译：在制造具有透明导电膜的基板的方法中，其中在含有氩和氧的混合气体的气氛下，在使用氧化铟/氧化锡靶的透明绝缘基板上进行溅射，当氧与氩的比例在混合气体的合适范围为0.016〜0.018的范围内，透明导电膜的载流子密度变得最大，而随着氧与氩的比例增加，迁移率逐渐上升。当氧与氩的比例在上述适当范围内时，透明导电膜的表面电阻，即载流子密度乘积和迁移率1 /（载流子密度迁移率）的乘积的倒数为最小值。在这种情况下，促进了膜的结晶，并且热处理前的膜的表面电阻与热处理后的膜的表面电阻之间的百分比变化可以保持在±10％以内。

5. 发明授权

US06291738B1 Outfit supporting member and outfit made by using the same 失效
标题翻译：装备配套及配套使用
公开(公告)号：US06291738B1
公开(公告)日：2001-09-18
申请号：US09230921
申请日：2000-09-28
申请人： Hiroyuki Uchino , Yoshikazu Izumihara , Hiroshi Maki , Naomitsu Takekawa , Yukihiro Katoh , Akihito Watanabe
发明人： Hiroyuki Uchino , Yoshikazu Izumihara , Hiroshi Maki , Naomitsu Takekawa , Yukihiro Katoh , Akihito Watanabe
IPC分类号： A61F1300
CPC分类号： A61F5/01 , A61F5/02 , A61F5/058 , A61L15/07 , A61L15/12 , B29C70/22
摘要： This invention provides holding and supporting appliances used in the fields of orthopedics, rehabilitation and sports and support members thereof that are light in weight, thin, rigid and durable and breathe well, and, furthermore, support members made of reinforced plastic triaxial woven fabrics impregnated with resin. The support members according to this invention include a piece formed of reinforced plastic triaxial woven fabrics. Preferably, the formed piece should have openings representing 5 to 33 percent of the overall area thereof, and a flexural rigidity of 10 to 1×104 kg·mm2 per unit width and a basis weight (weight per unit area) of 50 to 1000 g/m2. Holding and supporting appliances are formed by using the support members described above.
摘要翻译：本发明提供了重量轻，刚性好，耐用和呼吸良好的骨科，康复和运动及其支撑部件领域中的保持和辅助装置，此外，由增强塑料三轴织物浸渍的支撑构件与树脂。根据本发明的支撑构件包括由增强塑料三轴织物形成的片。优选地，成形件应具有占其总面积的5至33％的开口，并且每单位宽度为10至1×104kg.mm 2的弯曲刚度和50至1000g / m 2的基重（单位面积重量）。通过使用上述支撑构件形成保持和支撑装置。

6. 发明授权

US4928073A DC amplifier 失效
标题翻译：直流放大器
公开(公告)号：US4928073A
公开(公告)日：1990-05-22
申请号：US338878
申请日：1989-04-14
申请人： Minoru Arai , Yukihiro Katoh
发明人： Minoru Arai , Yukihiro Katoh
IPC分类号： H03F1/30 , H03F3/34 , H03F3/343 , H03F3/347 , H03F3/45
CPC分类号： H03F3/45103 , H03F2203/45371 , H03F2203/45498 , H03F2203/45654 , H03F2203/45696
摘要： A DC amplifier includes first and second transistors, an emitter resistor, and a load resistor. The first and second transistors constitute a differential amplification transistor pair. The emitter resistor is connected between the emitters of the first and second transistors. The load resistor is connected between the collectors of the transistors. The resistance of the load resistor is set to be 1/2 that of the emitter resistor. The emitters of third and fourth transistors equivalent to the first and second transistors are series-connected to the collectors of the first and second transistors through the load resistor. The biases of the third and fourth transistors are set to be close to those of the first and second transistors.
摘要翻译： DC放大器包括第一和第二晶体管，发射极电阻和负载电阻。第一和第二晶体管构成差分放大晶体管对。发射极电阻连接在第一和第二晶体管的发射极之间。负载电阻连接在晶体管的集电极之间。负载电阻的电阻设置为发射极电阻的1/2。等效于第一和第二晶体管的第三和第四晶体管的发射极通过负载电阻串联连接到第一和第二晶体管的集电极。第三和第四晶体管的偏置被设置为接近第一和第二晶体管的偏置。

7. 发明授权

US4770901A Process for formation of tin oxide film 失效
标题翻译：氧化锡膜的形成工艺
公开(公告)号：US4770901A
公开(公告)日：1988-09-13
申请号：US892643
申请日：1986-08-04
申请人： Yukihiro Katoh , Hideo Kawahara , Masato Hyohdou , Hironobu Yamamoto
发明人： Yukihiro Katoh , Hideo Kawahara , Masato Hyohdou , Hironobu Yamamoto
IPC分类号： B05D5/12 , C03C17/34 , C03C17/40 , C23C16/02 , C23C18/12 , B05D3/02
CPC分类号： C03C17/3458 , C23C16/0272
摘要： A process for formation of tin oxide film is described, wherein a glass substrate is heated to a high temperature and then tin oxide film is formed on the surface of said substrate by a thermal decomposition oxidation reaction caused by bringing a tin compound or a mixture of a tin compound and a fluorine-containing compound into contact with the surface of said glass substrate, and wherein prior to the formation of tin oxide film, said glass substrate is preliminarily brought into contact with a solution of chloride of a metal belonging to Group IVB of the Periodic Table so that a layer of a composition containing the chloride of the Group IVB metal as the primary component is formed on the surface of said substrate.
摘要翻译：描述了形成氧化锡膜的方法，其中将玻璃基板加热到高温，然后通过使锡化合物或其混合物的混合物引起的热分解氧化反应在所述基板的表面上形成氧化锡膜锡化合物和含氟化合物与所述玻璃基板的表面接触，并且其中在形成氧化锡膜之前，预先使所述玻璃基板与属于第IVB族的金属的氯化物溶液接触，使得在所述基材的表面上形成含有作为主要成分的IVB族金属的氯化物的组合物层。

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