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1. 发明授权

US5927302A Method for rinsing plate-shaped articles and cleaning bath and cleaning equipment used in the same 失效
标题翻译：漂洗板状物品及清洗浴及其使用的清洗设备的方法
公开(公告)号：US5927302A
公开(公告)日：1999-07-27
申请号：US527979
申请日：1995-09-14
申请人： Yuka Hayami , Masanori Kobayashi , Ken Yamazaki
发明人： Yuka Hayami , Masanori Kobayashi , Ken Yamazaki
IPC分类号： H01L21/304 , B08B3/10 , B08B11/02 , H01L21/00 , H01L21/306 , B08B3/04
CPC分类号： H01L21/02052 , B08B11/02 , B08B3/102 , H01L21/67051 , H01L21/67057 , Y10S134/902
摘要： A plate-shaped article is immersed in a cleaning liquid filling a cleaning bath having an overflowing surface through which the cleaning liquid flows out, and is rinsed out. In the cleaning bath, streams mostly being directed away from a predetermined plane approximately perpendicular to the overflowing surface are formed. The plate-shaped article is then brought into the cleaning liquid having the stream maintaining a state where the plate-shaped article intersects the predetermined plane and the surfaces of the plate-shaped article are in approximately parallel to the streams mostly being directed away from the predetermined plane on the surface of the cleaning liquid.
摘要翻译：将板状物品浸渍在填充有清洗液流过的溢流面的清洗液的清洗液中，并将其清洗干净。在清洗槽中，形成大致垂直于溢出表面的预定平面远离的流。然后将板状制品带入具有保持板状制品与预定平面相交的状态的流的清洁液体中，并且板状制品的表面大致平行于大致与远离在清洁液表面上的预定平面。

2. 发明授权

US5474616A Method for rinsing plate-shaped articles 失效
标题翻译：漂洗板状物品的方法
公开(公告)号：US5474616A
公开(公告)日：1995-12-12
申请号：US44064
申请日：1993-04-06
申请人： Yuka Hayami , Masanori Kobayashi , Ken Yamazaki
发明人： Yuka Hayami , Masanori Kobayashi , Ken Yamazaki
IPC分类号： H01L21/304 , B08B3/10 , B08B11/02 , H01L21/00 , H01L21/306 , B08B3/00
CPC分类号： H01L21/02052 , B08B11/02 , B08B3/102 , H01L21/67051 , H01L21/67057 , Y10S134/902
摘要： A plate-shaped article is immersed in a cleaning liquid filling a cleaning bath having an overflowing surface through which the cleaning liquid flows out, and is rinsed out. In the cleaning bath, streams mostly being directed away from a predetermined plane approximately perpendicular to the overflowing surface are formed. The plate-shaped article is then brought into the cleaning liquid having the stream maintaining a state where the plate-shaped article intersects the predetermined plane and the surfaces of the plate-shaped article are in approximately parallel to the streams mostly being directed away from the predetermined plane on the surface of the cleaning liquid.
摘要翻译：将板状物品浸渍在填充有清洗液流过的溢流面的清洗液的清洗液中，并将其清洗干净。在清洗槽中，形成大致垂直于溢出表面的预定平面远离的流。然后将板状制品带入具有保持板状制品与预定平面相交的状态的流的清洁液体中，并且板状制品的表面大致平行于大致与远离在清洁液表面上的预定平面。

3. 发明申请

US20080283924A1 Semiconductor device and method for fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080283924A1
公开(公告)日：2008-11-20
申请号：US11987156
申请日：2007-11-28
申请人： Takashi Saiki , Katsuaki Okoshi , Yuka Hayami
发明人： Takashi Saiki , Katsuaki Okoshi , Yuka Hayami
IPC分类号： H01L29/78
CPC分类号： H01L21/768 , H01L23/3171 , H01L2924/0002 , H01L2924/3511 , H01L2924/00
摘要： The semiconductor device comprises a silicon wafer 10, a multilayer interconnection 12 buried in inter-layer insulation film formed on the upper surface of the silicon wafer 10, and a silicon nitride film 16b which is formed on the back surface of the silicon wafer 10 and is an insulation film having a tensile stress, relaxing a stress exerted to the silicon wafer 10 by the inter-layer insulation films in which the multilayer interconnection 12 is buried.
摘要翻译：半导体器件包括硅晶片10，埋在形成在硅晶片10的上表面上的层间绝缘膜中的多层布线12和形成在硅晶片10的背面上的氮化硅膜16b 并且是具有拉伸应力的绝缘膜，通过其中埋设多层互连12的层间绝缘膜来缓和施加到硅晶片10的应力。

4. 发明授权

US07319066B2 Semiconductor device and method for fabricating the same 有权
公开(公告)号：US07319066B2
公开(公告)日：2008-01-15
申请号：US10973391
申请日：2004-10-27
申请人： Takashi Saiki , Katsuaki Okoshi , Yuka Hayami
发明人： Takashi Saiki , Katsuaki Okoshi , Yuka Hayami
IPC分类号： H01L29/72
CPC分类号： H01L21/768 , H01L23/3171 , H01L2924/0002 , H01L2924/3511 , H01L2924/00
摘要： The semiconductor device comprises a silicon wafer 10, a multilayer interconnection 12 buried in inter-layer insulation film formed on the upper surface of the silicon wafer 10, and a silicon nitride film 16b which is formed on the back surface of the silicon wafer 10 and is an insulation film having a tensile stress, relaxing a stress exerted to the silicon wafer 10 by the inter-layer insulation films in which the multilayer interconnection 12 is buried.

5. 发明申请

US20050275108A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050275108A1
公开(公告)日：2005-12-15
申请号：US10973391
申请日：2004-10-27
申请人： Takashi Saiki , Katsuaki Okoshi , Yuka Hayami
发明人： Takashi Saiki , Katsuaki Okoshi , Yuka Hayami
IPC分类号： H01L21/768 , H01L23/31 , H01L29/76
CPC分类号： H01L21/768 , H01L23/3171 , H01L2924/0002 , H01L2924/3511 , H01L2924/00
摘要： The semiconductor device comprises a silicon wafer 10, a multilayer interconnection 12 buried in inter-layer insulation film formed on the upper surface of the silicon wafer 10, and a silicon nitride film 16b which is formed on the back surface of the silicon wafer 10 and is an insulation film having a tensile stress, relaxing a stress exerted to the silicon wafer 10 by the inter-layer insulation films in which the multilayer interconnection 12 is buried.
摘要翻译：半导体器件包括硅晶片10，埋在形成在硅晶片10的上表面上的层间绝缘膜中的多层布线12和形成在硅晶片10的背面上的氮化硅膜16b 并且是具有拉伸应力的绝缘膜，通过其中埋设多层互连12的层间绝缘膜来缓和施加到硅晶片10的应力。

6. 发明授权

US5795494A Semiconductor substrate cleaning method and semiconductor device fabrication method 失效
标题翻译：半导体衬底清洗方法和半导体器件制造方法
公开(公告)号：US5795494A
公开(公告)日：1998-08-18
申请号：US513748
申请日：1995-08-10
申请人： Yuka Hayami , Miki T. Suzuki , Hiroki Ogawa , Shuzo Fujimura , Haruhisa Mori , Yoshiko Okui
发明人： Yuka Hayami , Miki T. Suzuki , Hiroki Ogawa , Shuzo Fujimura , Haruhisa Mori , Yoshiko Okui
IPC分类号： H01L21/304 , B08B3/10 , H01L21/306 , H01L21/02
CPC分类号： H01L21/02052 , B08B3/10
摘要： Semiconductor substrates are immersed in pure water having a lowered dissolved-oxygen concentration and heated to a temperature above 60.degree. C., in an atmosphere which keeps the dissolved oxygen concentration in pure water, in order to etch oxide films on surfaces of the semiconductor substrates for cleaning the surfaces of the semiconductor substrates. According to the present invention, contaminants and residual chemicals can be effectively removed without adding any chemical treating step. The cleaning can be effective without increasing the number of chemicals, and improved throughputs of the cleaning step can be obtained.
摘要翻译：将半导体衬底浸入具有降低的溶解氧浓度的纯水中，并在保持溶解氧浓度在纯水中的气氛中加热到高于60℃的温度，以便蚀刻半导体衬底的表面上的氧化膜用于清洁半导体衬底的表面。根据本发明，在不添加任何化学处理步骤的情况下，可以有效地除去污染物和残留的化学物质。清洁可以在不增加化学品数量的情况下是有效的，并且可以获得改善的清洗步骤的生产量。

7. 发明授权

US07294577B2 Method of manufacturing a silicide layer 有权
标题翻译：硅化物层的制造方法
公开(公告)号：US07294577B2
公开(公告)日：2007-11-13
申请号：US11088984
申请日：2005-03-24
申请人： Junji Oh , Yuka Hayami , Ryou Nakamura
发明人： Junji Oh , Yuka Hayami , Ryou Nakamura
IPC分类号： H01L21/311
CPC分类号： H01L21/02052 , H01L21/26586 , H01L21/28518 , H01L21/823807 , H01L21/823814 , H01L21/823835 , H01L21/823864
摘要： There is provided a method of manufacturing semiconductor device comprising removing an organic substance from a semiconductor surface having an oxide film thereon, the semiconductor surface being formed to have a line width of 50 nm or less; removing the oxide film from the semiconductor surface; drying the semiconductor surface without using an organic solvent; and forming a silicide layer on the semiconductor surface after drying the semiconductor surface.
摘要翻译：提供了一种制造半导体器件的方法，包括从其上具有氧化膜的半导体表面除去有机物质，半导体表面形成为具有50nm或更小的线宽度; 从半导体表面去除氧化膜; 干燥半导体表面而不使用有机溶剂; 以及在半导体表面干燥之后在半导体表面上形成硅化物层。

8. 发明授权

US07030026B2 Semiconductor device fabrication method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US07030026B2
公开(公告)日：2006-04-18
申请号：US10695874
申请日：2003-10-30
申请人： Yuka Hayami , Junji Oh , Takashi Saiki , Masataka Kase
发明人： Yuka Hayami , Junji Oh , Takashi Saiki , Masataka Kase
IPC分类号： H01L21/302
CPC分类号： H01L21/31133 , H01L21/31138 , H01L21/823814 , H01L29/665
摘要： The semiconductor device fabrication method comprises the step of forming electrodes 20 in a first element region 14n and in a second element region 14p; the step of forming a first resist film 22 which is opened in the first element region 14n; the step of forming a first dopant diffused region 28 with the first resist film 22 and the gate electrode 20 as a mask; the first ashing processing step of ashing the first resist film 22; the step of forming a sidewall insulation film 42 over the side wall of the gate electrode 20; the step of forming a second resist film 44 which is opened in the first element region 14n; the forming a second dopant diffused region 48 with the second resist film 44, the gate electrode 20 and the sidewall insulation film 42 as a mask; and the second ashing processing step for ashing the second resist film 44. The ashing processing period of time in the first ashing processing step is shorter than the ashing processing period of time in the second ashing processing step.
摘要翻译：半导体器件制造方法包括在第一元件区域14n和第二元件区域14p中形成电极20的步骤; 形成在第一元件区域14n中打开的第一抗蚀剂膜22的步骤; 以第一抗蚀剂膜22和栅电极20为掩模形成第一掺杂剂扩散区域28的步骤; 灰化第一抗蚀剂膜22的第一灰化处理步骤; 在栅电极20的侧壁上形成侧壁绝缘膜42的步骤; 形成在第一元件区域14n中打开的第二抗蚀剂膜44的步骤; 以第二抗蚀剂膜44，栅极电极20和侧壁绝缘膜42为掩模形成第二掺杂剂扩散区域48; 以及用于灰化第二抗蚀剂膜44的第二灰化处理步骤。第一灰化处理步骤中的灰化处理时间段比第二灰化处理步骤中的灰化处理时间段短。

9. 发明申请

US20050215003A1 Method of manufacturing a silicide layer 有权
标题翻译：硅化物层的制造方法
公开(公告)号：US20050215003A1
公开(公告)日：2005-09-29
申请号：US11088984
申请日：2005-03-24
申请人： Junji Oh , Yuka Hayami , Ryou Nakamura
发明人： Junji Oh , Yuka Hayami , Ryou Nakamura
IPC分类号： H01L21/28 , H01L21/02 , H01L21/265 , H01L21/285 , H01L21/336 , H01L21/44 , H01L21/4763 , H01L21/8238 , H01L27/092 , H01L29/78
CPC分类号： H01L21/02052 , H01L21/26586 , H01L21/28518 , H01L21/823807 , H01L21/823814 , H01L21/823835 , H01L21/823864
摘要： There is provided a method of manufacturing semiconductor device comprising removing an organic substance from a semiconductor surface having an oxide film thereon, the semiconductor surface being formed to have a line width of 50 nm or less; removing the oxide film from the semiconductor surface; drying the semiconductor surface without using an organic solvent; and forming a silicide layer on the semiconductor surface after drying the semiconductor surface.
摘要翻译：提供了一种制造半导体器件的方法，包括从其上具有氧化膜的半导体表面除去有机物质，半导体表面形成为具有50nm或更小的线宽度; 从半导体表面去除氧化膜; 干燥半导体表面而不使用有机溶剂; 以及在半导体表面干燥之后在半导体表面上形成硅化物层。

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