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1. 发明申请

US20110101544A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110101544A1
公开(公告)日：2011-05-05
申请号：US12913332
申请日：2010-10-27
申请人： Kazuya FUKUHARA , Kiyonori Yoshitomi , Takehiko Ikegami , Yujiro Kawasoe
发明人： Kazuya FUKUHARA , Kiyonori Yoshitomi , Takehiko Ikegami , Yujiro Kawasoe
IPC分类号： H01L23/498 , H01L21/60
CPC分类号： H01L23/49575 , H01L21/56 , H01L23/3107 , H01L23/4952 , H01L23/49541 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L24/85 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/05556 , H01L2224/05647 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48095 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/48647 , H01L2224/48847 , H01L2224/4903 , H01L2224/49051 , H01L2224/49113 , H01L2224/49171 , H01L2224/49179 , H01L2224/73265 , H01L2224/78301 , H01L2224/85148 , H01L2224/85181 , H01L2224/85345 , H01L2224/92247 , H01L2924/00011 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/181 , H01L2924/20752 , H01L2924/20753 , H01L2924/00 , H01L2924/00012 , H01L2224/43
摘要： A semiconductor device permitting the reduction of cost is disclosed. In a semiconductor package wherein electrode pads of a semiconductor chip and corresponding inner leads are electrically coupled with each other through a plurality of bonding wires, sensing wires (second and fourth bonding wires) are made thinner than other bonding wires (first and third bonding wires) coupled to inner leads same as those with the sensing wires coupled thereto, thereby reducing the cost of gold wires to attain the reduction in cost of the semiconductor package.
摘要翻译：公开了允许降低成本的半导体器件。在半导体封装中，半导体芯片的电极焊盘和对应的内部引线通过多根接合线彼此电耦合，使感测线（第二和第四接合线）比其它接合线（第一和第三接合线）耦合到与将感测线耦合到其上的内引线相同的内引线，从而降低金线的成本以实现半导体封装的成本降低。

2. 发明授权

US08384229B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US08384229B2
公开(公告)日：2013-02-26
申请号：US12913332
申请日：2010-10-27
申请人： Kazuya Fukuhara , Kiyonori Yoshitomi , Takehiko Ikegami , Yujiro Kawasoe
发明人： Kazuya Fukuhara , Kiyonori Yoshitomi , Takehiko Ikegami , Yujiro Kawasoe
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/49575 , H01L21/56 , H01L23/3107 , H01L23/4952 , H01L23/49541 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L24/85 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/05556 , H01L2224/05647 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48095 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/48647 , H01L2224/48847 , H01L2224/4903 , H01L2224/49051 , H01L2224/49113 , H01L2224/49171 , H01L2224/49179 , H01L2224/73265 , H01L2224/78301 , H01L2224/85148 , H01L2224/85181 , H01L2224/85345 , H01L2224/92247 , H01L2924/00011 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/181 , H01L2924/20752 , H01L2924/20753 , H01L2924/00 , H01L2924/00012 , H01L2224/43
摘要： A semiconductor device permitting the reduction of cost is disclosed. In a semiconductor package wherein electrode pads of a semiconductor chip and corresponding inner leads are electrically coupled with each other through a plurality of bonding wires, sensing wires (second and fourth bonding wires) are made thinner than other bonding wires (first and third bonding wires) coupled to inner leads same as those with the sensing wires coupled thereto, thereby reducing the cost of gold wires to attain the reduction in cost of the semiconductor package.

3. 发明授权

US5905617A Differential amplifier having a protection circuit 失效
标题翻译：差分放大器具有保护电路
公开(公告)号：US5905617A
公开(公告)日：1999-05-18
申请号：US17674
申请日：1998-02-03
申请人： Yujiro Kawasoe
发明人： Yujiro Kawasoe
IPC分类号： H03F3/45 , H03F1/52 , H02H3/18
CPC分类号： H03F1/52
摘要： In a differential amplifier, when an output node of an output buffer circuit is short-circuited to a high potential supply node, the difference between the potential at an output node of an amplifying circuit and the potential at the output node of the buffer circuit becomes so great as not to be produced in normal operation. A short-circuit protection circuit detects such a state and interrupts or limits a base current supplied to an output transistor of an output pull signal generating circuit, suppressing the flow of excess current into the output node of the buffer circuit.
摘要翻译：在差分放大器中，当输出缓冲器电路的输出节点与高电位电源节点短路时，放大电路的输出节点处的电位与缓冲电路的输出节点处的电位之间的差成为在正常运行中不会产生如此之大。短路保护电路检测这种状态，并且中断或限制提供给输出拉出信号发生电路的输出晶体管的基极电流，从而抑制进入缓冲电路输出节点的过剩电流。

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