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1. 发明授权

US08646403B2 Method for improving surface roughness of processed film of substrate and apparatus for processing substrate 有权
标题翻译：改善基板的加工膜的表面粗糙度的方法和基板的处理装置
公开(公告)号：US08646403B2
公开(公告)日：2014-02-11
申请号：US12574503
申请日：2009-10-06
申请人： Yuichiro Inatomi
发明人： Yuichiro Inatomi
IPC分类号： B05C11/00 , B05C13/00 , B05C13/02 , B05C15/00 , B05B15/04 , B05B13/02 , B05B1/26 , B05B1/28
CPC分类号： H01L21/0273 , G03F7/40 , H01L21/67109 , H01L21/6715 , H01L21/67178
摘要： A treatment apparatus for treating a substrate on a surface of which a treatment film has been formed and subjected to exposure processing and developing treatment. The treatment apparatus includes a nozzle for supplying a solvent gas of the treatment film to the surface of the treatment film on the substrate, and a moving mechanism for moving the nozzle which is supplying the solvent gas, relative to the substrate. The nozzle has an elongated discharge portion at least longer than a diameter of the substrate and partition plates at a front and a rear in the moving direction of the nozzle.
摘要翻译：一种用于处理已经形成处理膜的表面上的基底并进行曝光处理和显影处理的处理装置。处理装置包括用于将处理膜的溶剂气体供给到基板上的处理膜的表面的喷嘴，以及相对于基板移动供给溶剂气体的喷嘴的移动机构。所述喷嘴具有至少比所述基板的直径和所述喷嘴的移动方向上的前后的分隔板长的细长的排出部。

2. 发明申请

US20100316961A1 SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US20100316961A1
公开(公告)日：2010-12-16
申请号：US12859907
申请日：2010-08-20
申请人： Yuichiro INATOMI
发明人： Yuichiro INATOMI
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/6715 , H01L21/67178 , H01L21/67184 , Y10T137/8593
摘要： A substrate treatment apparatus which uniformly forms a fine resist pattern with a desired dimension within a plane of a substrate is disclosed. In a solvent vapor supply unit, a solvent vapor discharge nozzle is provided which can discharge a solvent vapor for swelling a resist pattern while moving above the front surface of a wafer. The wafer for which developing treatment has been finished and on which a resist pattern has been formed is carried into the solvent vapor supply unit, and the solvent vapor discharge nozzle is moved above the front surface of the wafer, so that the solvent vapor discharge nozzle supplies the solvent vapor onto the front surface of the wafer. This uniformly supplies a predetermined amount of solvent vapor to the resist pattern on the front surface of the wafer. As a result, the solvent vapor causes the resist pattern to evenly swell by a predetermined dimension, so that a resist pattern with a desired dimension is finally uniformly formed within the plane of the wafer.
摘要翻译：公开了一种在衬底的平面内均匀形成具有所需尺寸的精细抗蚀剂图案的衬底处理设备。在溶剂蒸气供给单元中，设置溶剂蒸汽排出喷嘴，其可以在晶片的前表面移动时排出溶剂蒸气以溶胀抗蚀剂图案。已经完成了显影处理并且已经形成抗蚀剂图案的晶片被携带到溶剂蒸气供应单元中，并且溶剂蒸汽排放喷嘴在晶片的前表面上方移动，使得溶剂蒸气排出喷嘴将溶剂蒸气供应到晶片的前表面上。这样就将预定量的溶剂蒸气均匀地供应到晶片的前表面上的抗蚀图案上。结果，溶剂蒸汽使抗蚀剂图案均匀地膨胀预定的尺寸，使得具有期望尺寸的抗蚀剂图案最终均匀地形成在晶片的平面内。

3. 发明申请

US20100266969A1 RESIST APPLYING AND DEVELOPING METHOD, RESIST FILM PROCESSING UNIT, AND RESIST APPLYING AND DEVELOPING APPARATUS COMPRISING 有权
标题翻译：电阻应用和开发方法，电阻膜处理单元和电阻应用和开发装置包含
公开(公告)号：US20100266969A1
公开(公告)日：2010-10-21
申请号：US12762666
申请日：2010-04-19
申请人： Gousuke SHIRAISHI , Yuichiro INATOMI
发明人： Gousuke SHIRAISHI , Yuichiro INATOMI
IPC分类号： G03F7/20 , G03B27/54
CPC分类号： G03B27/54 , G03F7/40 , H01L21/67115 , H01L21/6715 , H01L21/6719
摘要： A resist film processing unit is disclosed that can improve an etching resistance of a resist film formed on a substrate. The resist film processing unit includes a light source to irradiate an ultraviolet light on a resist film patterned by a development process, a heating part configured to heat the resist film irradiated with the ultraviolet light by the light source, and a solvent processing unit configured to expose the resist film to a solvent gas including a solvent that contains a benzene ring, during or after heating of the resist film by the heating part.
摘要翻译：公开了能够提高形成在基板上的抗蚀剂膜的耐蚀刻性的抗蚀剂膜处理单元。抗蚀剂膜处理单元包括用于通过显影处理对图案化的抗蚀剂膜照射紫外光的光源，被配置为加热由光源照射紫外线的抗蚀剂膜的加热部分，以及溶剂处理单元，在通过加热部加热抗蚀剂膜期间或之后，将抗蚀剂膜暴露于包含含有苯环的溶剂的溶剂气体。

4. 发明授权

US07600933B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US07600933B2
公开(公告)日：2009-10-13
申请号：US12260637
申请日：2008-10-29
申请人： Taro Yamamoto , Hideo Funakoshi , Yuichiro Inatomi
发明人： Taro Yamamoto , Hideo Funakoshi , Yuichiro Inatomi
IPC分类号： G03D5/00 , B05C11/02 , B05C13/00
CPC分类号： G03F7/40 , H01L21/67051
摘要： A substrate processing apparatus includes a substrate holding stage to hold a substrate having a surface facing up, the substrate having an exposed and developed resist pattern over the surface, a rotation driving mechanism to rotate the substrate holding stage around a vertical axis, a solvent vapor discharge nozzle having a discharge hole capable of discharging solvent vapor to swell the resist pattern onto the surface of the substrate and a vacuum opening capable of absorbing the solvent vapor discharged from the discharge hole, and a moving mechanism to move the solvent vapor discharge nozzle from an edge to a center of the substrate. The substrate is rotated around the vertical axis while moving the solvent vapor discharge nozzle from the edge to the center of the substrate, discharging the solvent vapor from the discharge hole, to supply the solvent vapor over the substrate in a spiral manner.
摘要翻译：基板处理装置包括：基板保持台，用于保持表面朝上的基板，基板在表面上具有暴露和显影的抗蚀剂图案;旋转驱动机构，用于使基板保持台绕垂直轴旋转，溶剂蒸气排出口具有能够排出溶剂蒸汽的排出孔，将抗蚀剂图案溶胀到基板的表面上，以及能够吸收从排出孔排出的溶剂蒸气的真空开口，以及使溶剂蒸气喷出口从边缘到基板的中心。将溶剂蒸气喷嘴从边缘移动到基板的中心，使排出孔排出溶剂蒸气，使螺旋状的溶剂蒸气供给到基板上。

5. 发明授权

US09505019B2 Plating apparatus, plating method and storage medium 有权
标题翻译：电镀装置，电镀方法和储存介质
公开(公告)号：US09505019B2
公开(公告)日：2016-11-29
申请号：US14129623
申请日：2012-06-04
申请人： Yuichiro Inatomi , Takashi Tanaka , Mitsuaki Iwashita
发明人： Yuichiro Inatomi , Takashi Tanaka , Mitsuaki Iwashita
IPC分类号： B05C5/00 , C23C18/16 , B05D1/02
CPC分类号： B05C5/001 , B05D1/02 , C23C18/1619 , C23C18/1669 , C23C18/1676 , C23C18/168
摘要： A plating apparatus of performing a plating process by supplying a plating liquid onto a substrate includes a substrate holding/rotating device configured to hold and rotate the substrate; a discharging device configured to discharge the plating liquid toward the substrate; a plating liquid supplying device configured to supply the plating liquid to the discharging device; and a controller configured to control the discharging device and the plating liquid supplying device. Further, the discharging device includes a first nozzle having a discharge opening, and a second nozzle having a discharge opening configured to be positioned closer to a central portion of the substrate than the discharge opening of the first nozzle. Furthermore, the plating liquid supplying device is configured to set a temperature of the plating liquid supplied to the first nozzle to be higher than a temperature of the plating liquid supplied to the second nozzle.
摘要翻译：通过将电镀液体供给到基板上进行电镀处理的电镀装置包括：基板保持旋转装置，其构造成保持和旋转基板; 排出装置，被配置为将所述电镀液体朝向所述基板排出; 电镀液供给装置，其配置为将电镀液体供给到排出装置; 以及控制器，其被配置为控制所述排出装置和所述电镀液供给装置。此外，排出装置包括具有排出口的第一喷嘴和具有排出口的第二喷嘴，其被配置为比第一喷嘴的排出口更靠近基板的中心部。此外，电镀液供给装置被配置为将供给到第一喷嘴的电镀液的温度设定为高于供给到第二喷嘴的电镀液的温度。

6. 发明授权

US08420304B2 Resist coating and developing apparatus, resist coating and developing method, resist-film processing apparatus, and resist-film processing method 有权
标题翻译：抗蚀涂层显影装置，抗蚀剂涂布显影法，抗蚀膜处理装置和抗蚀膜处理方法
公开(公告)号：US08420304B2
公开(公告)日：2013-04-16
申请号：US12752483
申请日：2010-04-01
申请人： Yuichiro Inatomi
发明人： Yuichiro Inatomi
IPC分类号： G03F7/00 , G03F7/004 , G03F7/40
CPC分类号： G03F7/70341 , H01L21/67115 , H01L21/6715
摘要： The present invention provides a resist coating and developing apparatus, a resist coating and developing method, a resist-film processing apparatus, and a resist-film processing method, capable of reducing a line width roughness by planarizing a resist pattern. The resist coating and developing apparatus comprises: a resist-film forming part configured to coat a resist onto a substrate to form a resist film thereon; a resist developing part configured to develop the exposed resist film to obtain a patterned resist film; and a solvent-gas supply part configured to expose the resist film, which has been developed and patterned by the resist developing part, to a first solvent of a gaseous atmosphere having a solubility to the resist film. A solvent supply part supplies, to the resist film which has been exposed to the first solvent, a second solvent in a liquid state having a solubility to the resist film.
摘要翻译：本发明提供能够通过平版化抗蚀剂图案来减少线宽粗糙度的抗蚀剂涂覆和显影装置，抗蚀剂涂覆和显影方法，抗蚀剂膜处理装置和抗蚀剂膜处理方法。抗蚀涂层显影装置包括：抗蚀剂膜形成部，其被配置为将抗蚀剂涂布在基板上以在其上形成抗蚀剂膜; 抗蚀剂显影部，被配置为显影曝光的抗蚀剂膜以获得图案化的抗蚀剂膜; 以及溶剂气体供给部，被配置为将由抗蚀剂显影部显影和图案化的抗蚀剂膜暴露于对抗蚀剂膜具有溶解性的气态气氛的第一溶剂。溶剂供给部件向暴露于第一溶剂的抗蚀剂膜供给具有对抗蚀剂膜的溶解性的液态的第二溶剂。

7. 发明授权

US07989156B2 Substrate treatment method and substrate treatment apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US07989156B2
公开(公告)日：2011-08-02
申请号：US12859907
申请日：2010-08-20
申请人： Yuichiro Inatomi
发明人： Yuichiro Inatomi
IPC分类号： H01L21/027 , G03F7/40
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/6715 , H01L21/67178 , H01L21/67184 , Y10T137/8593
摘要： A substrate treatment apparatus which uniformly forms a fine resist pattern with a desired dimension within a plane of a substrate is disclosed. In a solvent vapor supply unit, a solvent vapor discharge nozzle is provided which can discharge a solvent vapor for swelling a resist pattern while moving above the front surface of a wafer. The wafer for which developing treatment has been finished and on which a resist pattern has been formed is carried into the solvent vapor supply unit, and the solvent vapor discharge nozzle is moved above the front surface of the wafer, so that the solvent vapor discharge nozzle supplies the solvent vapor onto the front surface of the wafer. This uniformly supplies a predetermined amount of solvent vapor to the resist pattern on the front surface of the wafer. As a result, the solvent vapor causes the resist pattern to evenly swell by a predetermined dimension, so that a resist pattern with a desired dimension is finally uniformly formed within the plane of the wafer.
摘要翻译：公开了一种在衬底的平面内均匀形成具有所需尺寸的精细抗蚀剂图案的衬底处理设备。在溶剂蒸气供给单元中，设置溶剂蒸汽排出喷嘴，其可以在晶片的前表面移动时排出溶剂蒸气以溶胀抗蚀剂图案。已经完成了显影处理并且已经形成抗蚀剂图案的晶片被携带到溶剂蒸气供应单元中，并且溶剂蒸汽排放喷嘴在晶片的前表面上方移动，使得溶剂蒸气排出喷嘴将溶剂蒸气供应到晶片的前表面上。这样就将预定量的溶剂蒸气均匀地供应到晶片的前表面上的抗蚀图案上。结果，溶剂蒸汽使抗蚀剂图案均匀地膨胀预定的尺寸，使得具有期望尺寸的抗蚀剂图案最终均匀地形成在晶片的平面内。

8. 发明申请

US20110155181A1 SUBSTRATE PROCESSING METHOD, STORAGE MEDIUM STORING PROGRAM FOR EXECUTING SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板处理方法，用于执行基板处理方法和基板处理装置的存储介质存储程序
公开(公告)号：US20110155181A1
公开(公告)日：2011-06-30
申请号：US12974092
申请日：2010-12-21
申请人： Yuichiro Inatomi
发明人： Yuichiro Inatomi
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , H01L21/02052 , H01L21/67028
摘要： There is provided a substrate processing method capable of preventing pattern collapse when a rinse solution is removed from a substrate on which a microscopic resist pattern is formed and also capable of reducing cost for processing the substrate by decreasing an amount of usage of a hydrophobicizing agent. The substrate processing method includes a rinse solution supply process (step S12) for supplying the rinse solution onto the substrate on which the resist pattern is formed; and a rinse solution removing process (steps S14 to S16) for removing the rinse solution from the substrate in an atmosphere including vapor of a first processing solution that hydrophobicizes the resist pattern.
摘要翻译：提供了当从形成有微细抗蚀剂图案的基板除去漂洗溶液时能够防止图案塌陷的基板处理方法，并且还能够通过减少疏水剂的使用量来降低加工基板的成本。基板处理方法包括用于将冲洗液供给到其上形成有抗蚀剂图案的基板上的冲洗溶液供给工序（步骤S12）以及在包括使抗蚀剂图案疏水化的第一处理溶液的蒸汽的气氛中从基板除去冲洗溶液的漂洗溶液去除工艺（步骤S14至S16）。

9. 发明申请

US20100020297A1 METHOD FOR IMPROVING SURFACE ROUGHNESS OF PROCESSED FILM OF SUBSTRATE AND APPARATUS FOR PROCESSING SUBSTRATE 有权
标题翻译：改善基板加工薄膜表面粗糙度的方法及加工基板的设备
公开(公告)号：US20100020297A1
公开(公告)日：2010-01-28
申请号：US12574503
申请日：2009-10-06
申请人： Yuichiro INATOMI
发明人： Yuichiro INATOMI
IPC分类号： G03B27/52
CPC分类号： H01L21/0273 , G03F7/40 , H01L21/67109 , H01L21/6715 , H01L21/67178
摘要： A treatment apparatus for treating a substrate on a surface of which a treatment film has been formed and subjected to exposure processing and developing treatment. The treatment apparatus includes a nozzle for supplying a solvent gas of the treatment film to the surface of the treatment film on the substrate, and a moving mechanism for moving the nozzle which is supplying the solvent gas, relative to the substrate. The nozzle has an elongated discharge portion at least longer than a diameter of the substrate and partition plates at a front and a rear in the moving direction of the nozzle.
摘要翻译：一种用于处理已经形成处理膜的表面上的基底并进行曝光处理和显影处理的处理装置。处理装置包括用于将处理膜的溶剂气体供给到基板上的处理膜的表面的喷嘴，以及相对于基板移动供给溶剂气体的喷嘴的移动机构。所述喷嘴具有至少比所述基板的直径和所述喷嘴的移动方向上的前后的分隔板长的细长的排出部。

10. 发明申请

US20090152238A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM 有权
标题翻译：基板加工方法和基板加工系统
公开(公告)号：US20090152238A1
公开(公告)日：2009-06-18
申请号：US12335965
申请日：2008-12-16
申请人： Yuichiro INATOMI
发明人： Yuichiro INATOMI
IPC分类号： B44C1/22 , C23F1/08
CPC分类号： B05C11/023 , G03F7/40 , H01L21/0273 , H01L21/67028 , H01L21/67051
摘要： A solvent vapor is made to adhere efficiently to the surface of a resist pattern without using an ultraviolet irradiation process to improve processing accuracy, to reduce processing time and to suppress the diffusion of the solvent outside a substrate processing system.The surface of a resist pattern R formed on a semiconductor wafer W by an exposure process and a developing process is coated with water molecules m. A solvent vapor of a water-soluble solvent, such as NMP, is spouted on the surface of the resist pattern R coated with the water molecules m. A surface layer of the resist pattern R is swollen by the solvent vapor combined with the water molecules m to achieve a smoothing process. The water molecules m and the solvent s remaining on the resist pattern R on the wafer W after the smoothing process are removed by drying.
摘要翻译：使溶剂蒸气有效地粘附到抗蚀剂图案的表面上，而不使用紫外线照射工艺来提高加工精度，减少加工时间并抑制溶剂扩散到基板处理系统外部。通过曝光工艺和显影工艺在半导体晶片W上形成的抗蚀剂图案R的表面涂覆有水分子m。水溶性溶剂如NMP的溶剂蒸气喷射在涂有水分子m的抗蚀剂图案R的表面上。抗蚀剂图案R的表面层通过与水分子m结合的溶剂蒸气而溶胀以实现平滑处理。通过干燥除去平滑处理后的水分子m和残留在晶片W上的抗蚀剂图案R上的溶剂。

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