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1. 发明授权

US08648975B2 Liquid crystal display device with potential varying capacitance electrode 有权
标题翻译：具有电位变化的电容电极的液晶显示装置
公开(公告)号：US08648975B2
公开(公告)日：2014-02-11
申请号：US13699369
申请日：2011-04-12
申请人： Yuhichi Saitoh
发明人： Yuhichi Saitoh
IPC分类号： G02F1/1343 , G02F1/136 , G09G3/36 , H01L29/04
CPC分类号： G09G3/3659 , G02F1/136213 , G02F1/13624 , G02F2001/134345 , G09G2300/0426 , G09G2300/0852 , G09G2300/0876 , G09G2310/0205 , G09G2320/028 , H01L27/12 , H01L27/1225
摘要： In a liquid crystal display device in which one pixel is divided into the plurality of subpixels, a narrow picture-frame is realized by decreasing a wiring region without reducing a display quality. One of two sub-pixel portions includes a second transistor (TB) having a gate connected to a first scanning signal line (GL) and having a source connected to a data signal line (SL), a pixel electrode (EB) connected to a drain of the second transistor (TB), a liquid crystal capacitance (ClcB) formed by a common electrode (41) and the pixel electrode (EB), a third transistor (TC) having a gate connected to a second scanning signal line (G2L) and having a source connected to a line SEL, a capacitance electrode (EC) connected to a drain of the third transistor (TC), and a capacitance (Cl) formed by the pixel electrode (EB) and the capacitance electrode (EC). A high potential and a low potential are alternately provided to the line SEL for each one frame. The second scanning signal line (G2L) is selected after the first scanning signal line (GL) is selected.
摘要翻译：在一个像素被划分成多个子像素的液晶显示装置中，通过减少布线区域而不降低显示质量来实现窄的图像帧。两个子像素部分中的一个包括具有连接到第一扫描信号线（GL）并且具有连接到数据信号线（SL）的源极的栅极的第二晶体管（TB），连接到数据信号线第二晶体管（TB）的漏极，由公共电极（41）和像素电极（EB）形成的液晶电容（ClcB），具有与第二扫描信号线（G2L）连接的栅极的第三晶体管），并且具有连接到线SEL的源极，连接到第三晶体管（TC）的漏极的电容电极（EC）和由像素电极（EB）和电容电极（EC）形成的电容（Cl）。每一帧交替地向线SEL提供高电位和低电位。在选择第一扫描信号线（GL）之后，选择第二扫描信号线（G2L）。

2. 发明申请

US20060086937A1 Tft array substrate, liquid crystal display device, manufacturing methods of tft array substrate and liquid crystal display device, and electronic device 审中-公开
标题翻译： Tft阵列基板，液晶显示装置，tft阵列基板和液晶显示装置的制造方法以及电子装置
公开(公告)号：US20060086937A1
公开(公告)日：2006-04-27
申请号：US10526009
申请日：2003-08-29
申请人： Akiyoshi Fujii , Takaya Nakabayashi , Hisao Ochi , Takaeshi Hara , Yuhichi Saitoh
发明人： Akiyoshi Fujii , Takaya Nakabayashi , Hisao Ochi , Takaeshi Hara , Yuhichi Saitoh
IPC分类号： H01L29/04
CPC分类号： H01L27/1292 , H01L29/42384 , H01L29/66765 , H01L29/78633 , H01L29/78696
摘要： A TFT array substrate includes a thin film transistor section in which a gate electrode is formed on a substrate, and a semiconductor layer is formed on the gate electrode via a gate insulation layer. The semiconductor layer of this TFT array substrate has a shape formed by dropping a droplet. Accordingly, it is possible to directly forming a semiconductor layer, or a resist layer for forming the semiconductor layer, by dropping a droplet(s). On this account, the present invention allows the use of an inkjet method, thus reducing costs and numbers of manufacturing processes.
摘要翻译： TFT阵列基板包括薄膜晶体管部分，其中栅电极形成在基板上，半导体层经栅极绝缘层形成在栅电极上。该TFT阵列基板的半导体层具有通过滴下液滴形成的形状。因此，可以通过滴下液滴直接形成半导体层或用于形成半导体层的抗蚀剂层。因此，本发明允许使用喷墨方法，从而降低制造工艺的成本和数量。

3. 发明申请

US20120224118A1 LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
标题翻译：液晶显示装置
公开(公告)号：US20120224118A1
公开(公告)日：2012-09-06
申请号：US13509369
申请日：2010-06-18
申请人： Yohsuke Kanzaki , Yuhichi Saitoh
发明人： Yohsuke Kanzaki , Yuhichi Saitoh
IPC分类号： G02F1/1337 , G02F1/1339
CPC分类号： G02F1/133711 , G02F1/13458
摘要： On the surface of a first substrate on the side of a liquid crystal layer, an alignment film formed by curing a resin material having fluidity is provided so as to expand from a pixel region to a part of a terminal region through a connection region. At least between mounting terminals and the pixel region, a restriction structure portion for restricting the flow of the resin material that has not cured yet is formed. Each of the plurality of mounting terminals exposed to outside from the alignment film.
摘要翻译：在液晶层侧的第一基板的表面上，通过固化具有流动性的树脂材料形成的取向膜，通过连接区域从像素区域扩展到端子区域的一部分。至少在安装端子和像素区域之间，形成用于限制尚未固化的树脂材料的流动的限制结构部分。多个安装端子中的每一个暴露于取向膜的外部。

4. 发明申请

US20120200482A1 LIQUID CRYSTAL DISPLAY PANEL 审中-公开
标题翻译：液晶显示面板
公开(公告)号：US20120200482A1
公开(公告)日：2012-08-09
申请号：US13500245
申请日：2010-09-30
申请人： Tetsuo Fukaya , Yuhichi Saitoh , Hiroyuki Moriwaki , Yasuhiro Nakatake , Yukio kurozumi , Masato Kakuta , Masahiko Nakamizo , Takahiro Umezawa
发明人： Tetsuo Fukaya , Yuhichi Saitoh , Hiroyuki Moriwaki , Yasuhiro Nakatake , Yukio kurozumi , Masato Kakuta , Masahiko Nakamizo , Takahiro Umezawa
IPC分类号： G09G3/36
CPC分类号： G02F1/136204 , G02F1/133345 , G02F1/13454 , G02F2201/50
摘要： A liquid crystal display panel 100 has: a first substrate 11, having an active region AA having pixel electrodes and TFTs, and a gate driver region GDR provided on the outside of the active region AA; and a second substrate 21, disposed opposing the first substrate 11 with a liquid crystal layer 30 interposed therebetween, and having an opposite electrode 23. The opposite electrode 23 opposes the gate driver region GDR with the liquid crystal layer 30 interposed therebetween, and an insulating resin layer 26 is formed on the region of the opposite electrode 23 so that the insulating resin layer 26 opposes the gate driver region GDR. Thus, short-circuit failure between the driver region of the TFT substrate and the opposite electrode is eliminated.
摘要翻译：液晶显示面板100具有：具有具有像素电极和TFT的有源区域AA的第一基板11和设置在有源区域AA的外侧的栅极驱动器区域GDR; 以及第二基板21，其与第一基板11相对设置有夹在其间的液晶层30，并且具有相对的电极23.相对电极23与栅极驱动器区域GDR相对，其间插入液晶层30，并且绝缘树脂层26形成在相对电极23的区域上，使得绝缘树脂层26与栅极驱动器区域GDR相对。因此，消除了TFT基板的驱动器区域和相对电极之间的短路故障。

5. 发明授权

US08623681B2 Thin film transistor substrate, method for manufacturing the same, and liquid crystal display panel 有权
标题翻译：薄膜晶体管基板，其制造方法和液晶显示面板
公开(公告)号：US08623681B2
公开(公告)日：2014-01-07
申请号：US13808375
申请日：2011-07-01
申请人： Yoshiki Nakatani , Yuhichi Saitoh , Tetsuya Okamoto , Yohsuke Kanzaki , Yudai Takanishi
发明人： Yoshiki Nakatani , Yuhichi Saitoh , Tetsuya Okamoto , Yohsuke Kanzaki , Yudai Takanishi
IPC分类号： H01L21/00
CPC分类号： H01L27/1255 , G02F1/136213 , G02F1/13624 , G02F1/1368 , G02F2001/133397 , G02F2001/13606 , G02F2001/136236 , H01L27/1225 , H01L27/1259 , H01L27/1288
摘要： An auxiliary capacitor (6a) includes a capacitor line (11ba), a gate insulating film (12) provided so as to cover the capacitor line (11ba), a semiconductor layer (13b) provided on the gate insulating film (12) so as to overlap with the capacitor line (11b), and a drain electrode (14ba) provided on the semiconductor layer (13b) and connected to a pixel electrode (16a). The semiconductor layer (13b) made of an oxide semiconductor and the pixel electrode (16a) made of an oxide conductor contact each other.
摘要翻译：辅助电容器（6a）包括电容器线（11ba），设置为覆盖电容器线（11ba）的栅极绝缘膜（12），设置在栅极绝缘膜（12）上的半导体层（13b）与电容器线（11b）重叠，以及设置在半导体层（13b）上并连接到像素电极（16a）的漏电极（14ba）。由氧化物半导体构成的半导体层（13b）和由氧化物导体构成的像素电极（16a）彼此接触。

6. 发明授权

US08436353B2 Thin film transistor with recess 有权
标题翻译：带凹槽的薄膜晶体管
公开(公告)号：US08436353B2
公开(公告)日：2013-05-07
申请号：US13001397
申请日：2009-09-14
申请人： Masao Moriguchi , Tokuo Yoshida , Yuhichi Saitoh , Yasuaki Iwase , Yosuke Kanzaki , Mayuko Sakamoto
发明人： Masao Moriguchi , Tokuo Yoshida , Yuhichi Saitoh , Yasuaki Iwase , Yosuke Kanzaki , Mayuko Sakamoto
IPC分类号： H01L29/41
CPC分类号： H01L29/78696 , H01L27/3262 , H01L29/41733 , H01L29/78609 , H01L29/78645
摘要： A semiconductor device 10 according to the present invention includes an active layer 14 supported on a substrate 11 and having two channel regions 14c1, 14c2, a source region 14s, a drain region 14d, and an intermediate region 14m formed between the two channel regions 14c1, 14c2; a contact layer 16 having a source contact region 16s, a drain contact region 16d, and an intermediate contact region 16m; a source electrode 18s; a drain electrode 18d; an intermediate electrode 18m; and a gate electrode 12 facing the two channel regions and the intermediate region through a gate insulating film 13 interposed therebetween. An entire portion of the intermediate electrode 18m that is located between the first channel region 14c1 and the second channel region 14c2 overlaps the gate electrode 12 through the intermediate region 14m and the gate insulating film 13.
摘要翻译：根据本发明的半导体器件10包括支撑在基板11上并具有两个沟道区域14c1,14c2的有源层14，形成在两个沟道区域14c1之间的源极区域14s，漏极区域14d和中间区域14m ，14c2; 具有源极接触区域16s，漏极接触区域16d和中间接触区域16m的接触层16; 源电极18s; 漏电极18d; 中间电极18m; 以及通过插入其间的栅极绝缘膜13面对两个沟道区域和中间区域的栅电极12。位于第一沟道区域14c1和第二沟道区域14c2之间的中间电极18m的整个部分通过中间区域14m和栅极绝缘膜13与栅电极12重叠。

7. 发明申请

US20120104403A1 THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20120104403A1
公开(公告)日：2012-05-03
申请号：US13381282
申请日：2010-02-22
申请人： Akihiko Kohno , Masao Moriguchi , Yuhichi Saitoh
发明人： Akihiko Kohno , Masao Moriguchi , Yuhichi Saitoh
IPC分类号： H01L29/786 , H01L29/04 , H01L21/336
CPC分类号： H01L21/0217 , H01L21/022 , H01L29/04 , H01L29/4908 , H01L29/66765 , H01L29/78678
摘要： An object of the present invention is to provide a thin film transistor having a gate insulating film for suppressing a shift amount of a threshold voltage generated by use under a high temperature environment. In a thin film transistor having a channel layer made of microcrystalline silicon, a gate insulating film 140 is a film obtained by laminating a first silicon nitride film 141 having a nitrogen concentration of 6×1021 atoms/cc or less and a second silicon nitride film 142 having a nitrogen concentration higher than 6×1021 atoms/cc. Therefore, the second silicon nitride film 142 increases the blocking effect against mobile ions entering from a glass substrate 20 to make the mobile ions less likely to be stored in an interface with a channel layer 50. The first silicon nitride film 141 increases the dielectric breakdown voltage of the gate insulating film 140.
摘要翻译：本发明的目的是提供一种薄膜晶体管，其具有用于抑制在高温环境下使用产生的阈值电压的偏移量的栅极绝缘膜。在具有由微晶硅制成的沟道层的薄膜晶体管中，栅极绝缘膜140是通过层叠氮浓度为6×1021原子/ cc以下的第一氮化硅膜141和第二氮化硅膜 142的氮浓度高于6×1021原子/ cc。因此，第二氮化硅膜142增加了从玻璃基板20进入的移动离子的阻挡效应，使得移动离子不太可能存储在与沟道层50的界面中。第一氮化硅膜141增加了介质击穿栅极绝缘膜140的电压。

8. 发明申请

US20110147756A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110147756A1
公开(公告)日：2011-06-23
申请号：US13001397
申请日：2009-09-14
申请人： Masao Moriguchi , Tokuo Yoshida , Yuhichi Saitoh , Yasuaki Iwase , Yosuke Kanzaki , Mayuko Sakamoto
发明人： Masao Moriguchi , Tokuo Yoshida , Yuhichi Saitoh , Yasuaki Iwase , Yosuke Kanzaki , Mayuko Sakamoto
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , H01L27/3262 , H01L29/41733 , H01L29/78609 , H01L29/78645
摘要： A semiconductor device 10 according to the present invention includes an active layer 14 supported on a substrate 11 and having two channel regions 14c1, 14c2, a source region 14s, a drain region 14d, and an intermediate region 14m formed between the two channel regions 14c1, 14c2; a contact layer 16 having a source contact region 16s, a drain contact region 16d, and an intermediate contact region 16m; a source electrode 18s; a drain electrode 18d; an intermediate electrode 18m; and a gate electrode 12 facing the two channel regions and the intermediate region through a gate insulating film 13 interposed therebetween. An entire portion of the intermediate electrode 18m that is located between the first channel region 14c1 and the second channel region 14c2 overlaps the gate electrode 12 through the intermediate region 14m and the gate insulating film 13.
摘要翻译：根据本发明的半导体器件10包括支撑在基板11上并具有两个沟道区域14c1,14c2的有源层14，形成在两个沟道区域14c1之间的源极区域14s，漏极区域14d和中间区域14m ，14c2; 具有源极接触区域16s，漏极接触区域16d和中间接触区域16m的接触层16; 源电极18s; 漏电极18d; 中间电极18m; 以及通过插入其间的栅极绝缘膜13面对两个沟道区域和中间区域的栅电极12。位于第一沟道区域14c1和第二沟道区域14c2之间的中间电极18m的整个部分通过中间区域14m和栅极绝缘膜13与栅电极12重叠。

9. 发明授权

US09196742B2 Thin film transistor substrate, method for manufacturing the same, and liquid crystal display panel 有权
标题翻译：薄膜晶体管基板，其制造方法和液晶显示面板
公开(公告)号：US09196742B2
公开(公告)日：2015-11-24
申请号：US13813839
申请日：2011-07-28
申请人： Yohsuke Kanzaki , Yuhichi Saitoh , Yoshiki Nakatani , Tetsuya Okamoto , Yudai Takanishi
发明人： Yohsuke Kanzaki , Yuhichi Saitoh , Yoshiki Nakatani , Tetsuya Okamoto , Yudai Takanishi
IPC分类号： H01L29/786 , G02F1/1368 , H01L27/12 , H01L29/66
CPC分类号： H01L29/7869 , G02F1/1368 , H01L27/1225 , H01L27/1255 , H01L27/1288 , H01L29/66742 , H01L29/66969
摘要： A TFT substrate (20a) includes a plurality of pixel electrodes (17a) provided in a matrix, a plurality of TFTs (5) each provided for a corresponding one of the pixel electrodes (17a), and a plurality of auxiliary capacitors (6a) each provided for a corresponding one of the pixel electrodes (17a). Each of the auxiliary capacitors (6a) includes a capacitor line (11b) made of a material identical to that of the gate electrode (11aa) of the TFT (5) and provided in a layer identical to that of the gate electrode (11aa) of the TFT (5), the gate insulating film (12) provided so as to cover the capacitor line (11b), and a corresponding one of the pixel electrodes (17a) provided on the gate insulating film (12) so as to overlap with the capacitor line (11b) and being in conduction with a drain electrode (14ca).
摘要翻译： TFT基板（20a）包括以矩阵形式设置的多个像素电极（17a），分别设置在相应的像素电极（17a）中的多个TFT（5）和多个辅助电容器（6a）每个设置用于相应的一个像素电极（17a）。每个辅助电容器（6a）包括由与TFT（5）的栅电极（11aa）相同的材料制成并且设置在与栅电极（11aa）相同的层中的电容器线（11b）设置为覆盖电容线（11b）的TFT（5），栅极绝缘膜（12）和设置在栅极绝缘膜（12）上的相应的像素电极（17a）重叠与电容器线（11b）并且与漏电极（14ca）导通。

10. 发明授权

US09076394B2 Active matrix substrate, liquid crystal panel, liquid crystal display device, television receiver 有权
标题翻译：有源矩阵基板，液晶面板，液晶显示装置，电视接收机
公开(公告)号：US09076394B2
公开(公告)日：2015-07-07
申请号：US13577700
申请日：2010-12-08
申请人： Yuhichi Saitoh
发明人： Yuhichi Saitoh
IPC分类号： G06F3/038 , G09G3/36
CPC分类号： G09G3/3607 , G06F3/038 , G09G3/3614 , G09G3/3648 , G09G3/3655 , G09G2300/0426 , G09G2300/0447 , G09G2300/0876 , G09G2320/0223 , G09G2320/028
摘要： An active matrix substrate of the present invention includes: data signal lines; scanning signal lines (GLi); transistors connected with the data signal lines and the scanning signal lines (GLi); and retention capacitor lines (CSLi). One pixel region includes a plurality of pixel electrodes. A CS driver (46) for outputting a retention capacitor line signal to drive the retention capacitor lines is formed monolithically. In one pixel region, a pixel electrode and a retention capacitor line corresponding to the pixel electrode forms a retention capacitor therebetween. This allows the liquid crystal display device based on a pixel-division system to have a liquid crystal panel with a narrower frame.
摘要翻译：本发明的有源矩阵基板包括：数据信号线; 扫描信号线（GLi）; 与数据信号线和扫描信号线（GLi）连接的晶体管; 和保持电容线（CSLi）。一个像素区域包括多个像素电极。一体地形成用于输出保持电容配线信号来驱动保持电容配线的CS驱动器（46）。在一个像素区域中，对应于像素电极的像素电极和保持电容线在其间形成保持电容。这允许基于像素分割系统的液晶显示装置具有窄帧的液晶面板。

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