专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100108262A1 APPARATUS FOR IN-SITU SUBSTRATE PROCESSING 审中-公开
标题翻译：用于现场基板处理的装置
公开(公告)号：US20100108262A1
公开(公告)日：2010-05-06
申请号：US12683944
申请日：2010-01-07
申请人： Guang-Yaw Hwang , Fu-Lun Lui , Yu-Wei Yang
发明人： Guang-Yaw Hwang , Fu-Lun Lui , Yu-Wei Yang
IPC分类号： H01L21/306 , C23C16/00 , C23F1/08
CPC分类号： H01L21/31138 , H01J37/3244 , H01J37/32449 , H01L21/02063 , H01L21/31116 , H01L21/31144 , H01L21/67017 , H01L21/6708 , H01L21/76808 , H01L21/76811
摘要： A plasma processing system (system) for processing a substrate is provided. The system includes a gas distribution system and a gas flow control assembly coupled to the gas distribution system. The gas flow control assembly is configured to control the input gases provided by the gas distribution system. The plasma processing system also includes a first set of nozzles coupled to the gas flow control assembly and configured to supply a first set of gases for processing a first portion of the substrate. The plasma processing system further includes a second set of nozzles coupled to the gas flow control assembly and configured to supply a second set of gases for processing a second portion of the substrate. The flow rate of the first set of gases is different from a flow rate of the second set of gases.
摘要翻译：提供了一种用于处理衬底的等离子体处理系统（系统）。该系统包括气体分配系统和耦合到气体分配系统的气体流量控制组件。气体流量控制组件被配置为控制由气体分配系统提供的输入气体。等离子体处理系统还包括耦合到气体流量控制组件的第一组喷嘴，并且被配置为提供用于处理基板的第一部分的第一组气体。等离子体处理系统还包括第二组喷嘴，其联接到气体流量控制组件并且被配置为提供第二组气体以处理基板的第二部分。第一组气体的流量与第二组气体的流量不同。

2. 发明授权

US07662723B2 Methods and apparatus for in-situ substrate processing 有权
标题翻译：用于原位底物处理的方法和装置
公开(公告)号：US07662723B2
公开(公告)日：2010-02-16
申请号：US11608738
申请日：2006-12-08
申请人： Guang-Yaw Hwang , Pu-Lun Lui , Yu-Wei Yang
发明人： Guang-Yaw Hwang , Pu-Lun Lui , Yu-Wei Yang
IPC分类号： H01L21/302
CPC分类号： H01L21/31138 , H01J37/3244 , H01J37/32449 , H01L21/02063 , H01L21/31116 , H01L21/31144 , H01L21/67017 , H01L21/6708 , H01L21/76808 , H01L21/76811
摘要： A plasma processing system for processing a substrate is disclosed. The plasma processing system includes a gas distribution system. The plasma processing system also includes a gas flow control assembly coupled to the gas distribution system and configured to control a set of input gases provided by the gas distribution system. The plasma processing system further includes a first set of nozzles coupled to the gas flow control assembly and configured to supply a first set of gases for processing a first portion of the substrate. The plasma processing system further includes a second set of nozzles coupled to the gas flow control assembly and configured to supply a second set of gases for processing a second portion of the substrate.
摘要翻译：公开了一种用于处理衬底的等离子体处理系统。等离子体处理系统包括气体分配系统。等离子体处理系统还包括气体流量控制组件，其耦合到气体分配系统并且被配置为控制由气体分配系统提供的一组输入气体。等离子体处理系统还包括耦合到气体流量控制组件的第一组喷嘴，其被配置为提供用于处理基板的第一部分的第一组气体。等离子体处理系统还包括第二组喷嘴，其联接到气体流量控制组件并且被配置为提供第二组气体以处理衬底的第二部分。

3. 发明申请

US20070175861A1 METHODS AND APPARATUS FOR IN-SITU SUBSTRATE PROCESSING 有权
标题翻译：用于现场基板处理的方法和装置
公开(公告)号：US20070175861A1
公开(公告)日：2007-08-02
申请号：US11608738
申请日：2006-12-08
申请人： Guang-Yaw Hwang , Pu-Lun Lui , Yu-Wei Yang
发明人： Guang-Yaw Hwang , Pu-Lun Lui , Yu-Wei Yang
IPC分类号： C23F1/00 , H01L21/461 , B44C1/22 , H01L21/306
CPC分类号： H01L21/31138 , H01J37/3244 , H01J37/32449 , H01L21/02063 , H01L21/31116 , H01L21/31144 , H01L21/67017 , H01L21/6708 , H01L21/76808 , H01L21/76811
摘要： A plasma processing system for processing a substrate is disclosed. The plasma processing system includes a gas distribution system. The plasma processing system also includes a gas flow control assembly coupled to the gas distribution system and configured to control a set of input gases provided by the gas distribution system. The plasma processing system further includes a first set of nozzles coupled to the gas flow control assembly and configured to supply a first set of gases for processing a first portion of the substrate. The plasma processing system further includes a second set of nozzles coupled to the gas flow control assembly and configured to supply a second set of gases for processing a second portion of the substrate.
摘要翻译：公开了一种用于处理衬底的等离子体处理系统。等离子体处理系统包括气体分配系统。等离子体处理系统还包括气体流量控制组件，其耦合到气体分配系统并且被配置为控制由气体分配系统提供的一组输入气体。等离子体处理系统还包括耦合到气体流量控制组件的第一组喷嘴，其被配置为提供用于处理基板的第一部分的第一组气体。等离子体处理系统还包括第二组喷嘴，其联接到气体流量控制组件并且被配置为提供第二组气体以处理基板的第二部分。

4. 发明授权

US07479458B1 Methods and apparatus for the optimization of highly selective process gases 有权
标题翻译：用于优化高选择性工艺气体的方法和设备
公开(公告)号：US07479458B1
公开(公告)日：2009-01-20
申请号：US11305369
申请日：2005-12-15
申请人： Guang-Yaw Hwang , Thomas Nguyen , Wen-Ben Chou , Timothy Tran , Yu-Wei Yang
发明人： Guang-Yaw Hwang , Thomas Nguyen , Wen-Ben Chou , Timothy Tran , Yu-Wei Yang
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/76811 , H01L21/76813
摘要： A method for etching a barrier material on a semiconductor substrate is disclosed. The method includes placing the substrate in a plasma processing chamber of the plasma processing system, wherein the substrate includes the barrier material and a low-k material, and wherein the barrier material and a low-k material are configured to be exposed to a plasma. The method also includes flowing an etchant gas mixture, including CH3F from about 4% to about 8% of a plasma gas flow, into the plasma processing chamber, wherein the etchant gas mixture is configured to etch the barrier material at a first etch rate, the etchant gas mixture is configured to etch the low-k material at a second etch rate, wherein the first etch rate is substantially greater than the second etch rate. The method further includes striking a plasma from the etchant source gas; and etching the barrier layer and the low-k layer.
摘要翻译：公开了一种在半导体衬底上蚀刻阻挡材料的方法。该方法包括将衬底放置在等离子体处理系统的等离子体处理室中，其中衬底包括阻挡材料和低k材料，并且其中阻挡材料和低k材料构造成暴露于等离子体。该方法还包括将包括等离子体气体流的约4％至约8％的CH 3 F的蚀刻剂气体混合物流入等离子体处理室，其中蚀刻剂气体混合物被配置为以第一蚀刻速率蚀刻阻挡材料，蚀刻剂气体混合物被配置为以第二蚀刻速率蚀刻低k材料，其中第一蚀刻速率基本上大于第二蚀刻速率。该方法还包括从蚀刻剂源气体冲击等离子体; 并蚀刻阻挡层和低k层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式