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1. 发明申请

US20070010080A1 Plasma Treatment at Film Layer to Reduce Sheet Resistance and to Improve Via Contact Resistance 有权
标题翻译：膜层等离子体处理以降低薄膜电阻并提高通孔接触电阻
公开(公告)号：US20070010080A1
公开(公告)日：2007-01-11
申请号：US11419542
申请日：2006-05-22
申请人： Jian-Shin Tsai , Yu-Hua Chou , Tzo-Hung Luo , Chi-Chan Tseng , Wei Zhang , Jong-Chen Yang
发明人： Jian-Shin Tsai , Yu-Hua Chou , Tzo-Hung Luo , Chi-Chan Tseng , Wei Zhang , Jong-Chen Yang
IPC分类号： H01L21/3205
CPC分类号： H01L21/76843 , H01L21/3003 , H01L21/7685 , H01L21/76856 , H01L21/76862
摘要： A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
摘要翻译：一种制造半导体器件触点的方法，包括在衬底上形成绝缘层并在绝缘层上形成凝集层。然后将凝集层暴露于等离子体处理。在等离子体处理的凝集层上形成阻挡层，并且在阻挡层上形成导电层。

2. 发明授权

US08473520B1 Delta measures 有权
标题翻译：三角洲措施
公开(公告)号：US08473520B1
公开(公告)日：2013-06-25
申请号：US13340231
申请日：2011-12-29
申请人： Ka Chun Tsang , Seyyed Ali Moosavi , Yu-Hua Chou , Finlay Cannon
发明人： Ka Chun Tsang , Seyyed Ali Moosavi , Yu-Hua Chou , Finlay Cannon
IPC分类号： G06F17/30
CPC分类号： G06F17/30572 , G06F17/30973
摘要： A system may include reception of a selection of a set of one or more elements of a data visualization, the set associated with a measure and each of the one or more elements associated with a value of the measure for a respective combination of one or more dimension members, reception of an instruction to create a second set of one or more elements associated with a calculated measure, where a value of the calculated measure for a respective combination is based on two values of the measure for the respective combination, and where a first value of the two values of the measure is associated with a first time and a second value of the two values of the measure is associated with a second time, and automatic generation of a query to produce the value of the calculated measure for each of the combinations.
摘要翻译：系统可以包括接收数据可视化的一个或多个元素的集合的选择，该集合与度量相关联，并且与一个或多个元素的相应组合的度量值相关联的一个或多个元素中的每一个维度成员接收创建与计算的度量相关联的一个或多个元素的第二组的指令，其中针对相应组合的所计算的度量的值基于相应组合的度量的两个值，并且其中测量的两个值的第一值与第一次相关联，并且测量的两个值的第二值与第二次相关联，并且自动生成查询以产生每个测量的计算度量的值组合。

3. 发明授权

US07358612B2 Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance 有权
标题翻译：在薄膜层进行等离子体处理以降低薄层电阻并改善通孔接触电阻
公开(公告)号：US07358612B2
公开(公告)日：2008-04-15
申请号：US11419537
申请日：2006-05-22
申请人： Jian-Shin Tsai , Yu-Hua Chou , Tzo-Hung Luo , Chi-Chan Tseng , Wei Zhang , Jong-Chen Yang
发明人： Jian-Shin Tsai , Yu-Hua Chou , Tzo-Hung Luo , Chi-Chan Tseng , Wei Zhang , Jong-Chen Yang
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76843 , H01L21/7685 , H01L21/76856 , H01L21/76862
摘要： A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
摘要翻译：一种制造半导体器件触点的方法，包括在衬底上形成绝缘层并在绝缘层上形成凝集层。然后将凝集层暴露于等离子体处理。在等离子体处理的凝集层上形成阻挡层，并且在阻挡层上形成导电层。

4. 发明申请

US20050250320A1 Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance 失效
标题翻译：在薄膜层进行等离子体处理以降低薄层电阻并改善通孔接触电阻
公开(公告)号：US20050250320A1
公开(公告)日：2005-11-10
申请号：US10842169
申请日：2004-05-10
申请人： Jian Tsai , Yu-Hua Chou , Tzo-Hung Luo , Chi-Chan Tseng , Wei Zhang , Jong-Chen Yang
发明人： Jian Tsai , Yu-Hua Chou , Tzo-Hung Luo , Chi-Chan Tseng , Wei Zhang , Jong-Chen Yang
IPC分类号： H01L21/44 , H01L21/768
CPC分类号： H01L21/76843 , H01L21/7685 , H01L21/76856 , H01L21/76862
摘要： A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
摘要翻译：一种制造半导体器件触点的方法，包括在衬底上形成绝缘层，并在绝缘层上形成凝集层。然后将凝集层暴露于等离子体处理。在等离子体处理的凝集层上形成阻挡层，并且在阻挡层上形成导电层。

5. 发明申请

US20130173584A1 DELTA MEASURES 有权
标题翻译： DELTA措施
公开(公告)号：US20130173584A1
公开(公告)日：2013-07-04
申请号：US13340231
申请日：2011-12-29
申请人： Ka Chun Tsang , Seyyed Ali Moosavi , Yu-Hua Chou , Finlay Cannon
发明人： Ka Chun Tsang , Seyyed Ali Moosavi , Yu-Hua Chou , Finlay Cannon
IPC分类号： G06F17/30
CPC分类号： G06F17/30572 , G06F17/30973
摘要： A system may include reception of a selection of a set of one or more elements of a data visualization, the set associated with a measure and each of the one or more elements associated with a value of the measure for a respective combination of one or more dimension members, reception of an instruction to create a second set of one or more elements associated with a calculated measure, where a value of the calculated measure for a respective combination is based on two values of the measure for the respective combination, and where a first value of the two values of the measure is associated with a first time and a second value of the two values of the measure is associated with a second time, and automatic generation of a query to produce the value of the calculated measure for each of the combinations
摘要翻译：系统可以包括接收数据可视化的一个或多个元素的集合的选择，该集合与度量相关联，并且与一个或多个元素的相应组合的度量值相关联的一个或多个元素中的每一个维度成员接收创建与计算的度量相关联的一个或多个元素的第二组的指令，其中针对相应组合的所计算的度量的值基于相应组合的度量的两个值，并且其中测量的两个值的第一值与第一次相关联，并且测量的两个值的第二值与第二次相关联，并且自动生成查询以产生每个测量的计算度量的值组合

6. 发明授权

US07067409B2 Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance 失效
标题翻译：在薄膜层进行等离子体处理以降低薄层电阻并改善通孔接触电阻
公开(公告)号：US07067409B2
公开(公告)日：2006-06-27
申请号：US10842169
申请日：2004-05-10
申请人： Jian Shin Tsai , Yu Hua Chou , Tzo Hung Luo , Chi Chan Tseng , Wei Zhang , Jong Chen Yang
发明人： Jian Shin Tsai , Yu Hua Chou , Tzo Hung Luo , Chi Chan Tseng , Wei Zhang , Jong Chen Yang
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L21/76843 , H01L21/7685 , H01L21/76856 , H01L21/76862
摘要： A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
摘要翻译：一种制造半导体器件触点的方法，包括在衬底上形成绝缘层并在绝缘层上形成凝集层。然后将凝集层暴露于等离子体处理。在等离子体处理的凝集层上形成阻挡层，并且在阻挡层上形成导电层。

7. 发明授权

US07378744B2 Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance 有权
公开(公告)号：US07378744B2
公开(公告)日：2008-05-27
申请号：US11419542
申请日：2006-05-22
申请人： Jian-Shin Tsai , Yu-Hua Chou , Tzo-Hung Luo , Chi-Chan Tseng , Wei Zhang , Jong-Chen Yang
发明人： Jian-Shin Tsai , Yu-Hua Chou , Tzo-Hung Luo , Chi-Chan Tseng , Wei Zhang , Jong-Chen Yang
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76843 , H01L21/3003 , H01L21/7685 , H01L21/76856 , H01L21/76862
摘要： A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.

8. 发明申请

US20060216916A1 Plasma Treatment at Film Layer to Reduce Sheet Resistance and to Improve Via Contact Resistance 有权
标题翻译：膜层等离子体处理以降低薄膜电阻并提高通孔接触电阻
公开(公告)号：US20060216916A1
公开(公告)日：2006-09-28
申请号：US11419537
申请日：2006-05-22
申请人： Jian-Shin Tsai , Yu-Hua Chou , Tzo-Hung Luo , Chi-Chan Tseng , Wei Zhang , Jong-Chen Yang
发明人： Jian-Shin Tsai , Yu-Hua Chou , Tzo-Hung Luo , Chi-Chan Tseng , Wei Zhang , Jong-Chen Yang
IPC分类号： H01L21/3205
CPC分类号： H01L21/76843 , H01L21/7685 , H01L21/76856 , H01L21/76862
摘要： A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
摘要翻译：一种制造半导体器件触点的方法，包括在衬底上形成绝缘层并在绝缘层上形成凝集层。然后将凝集层暴露于等离子体处理。在等离子体处理的凝集层上形成阻挡层，并且在阻挡层上形成导电层。

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