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1. 发明授权

US09145609B2 Lateral flow atomic layer deposition device 有权
标题翻译：侧流原子层沉积装置
公开(公告)号：US09145609B2
公开(公告)日：2015-09-29
申请号：US13439178
申请日：2012-04-04
申请人： Young-Seok Choi , Dae-Youn Kim , Seung Woo Choi , Yong Min Yoo , Jung Soo Kim
发明人： Young-Seok Choi , Dae-Youn Kim , Seung Woo Choi , Yong Min Yoo , Jung Soo Kim
IPC分类号： C23C16/455
CPC分类号： C23C16/45591 , C23C16/45502 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45587
摘要： A lateral flow atomic layer deposition device according to an exemplary embodiment of the present invention eliminates a gas flow control plate in a conventional lateral flow atomic layer deposition device and controls shapes of a gas input part and a gas output part in a reactor cover to make a gas flow path to a center of a substrate shorter than a gas flow path to an edge of the substrate and thereby increase the amount of gas per unit area flowing to the center of the substrate. Therefore, film thickness in the center of the substrate in the lateral flow reactor increases.
摘要翻译：根据本发明的示例性实施例的侧流原子层沉积装置消除了常规横流原子层沉积装置中的气流控制板，并控制反应器盖中的气体输入部分和气体输出部分的形状，以使通向基板中心的气体流动通道，该气体流动通道短于通向基板边缘的气体流动路径，从而增加每单位面积流到基板中心的气体量。因此，侧流反应器中的基板中心的膜厚度增加。

2. 发明授权

US09035312B2 TFT array substrate and fabrication method thereof 有权
标题翻译： TFT阵列基板及其制造方法
公开(公告)号：US09035312B2
公开(公告)日：2015-05-19
申请号：US11316895
申请日：2005-12-27
申请人： Young Seok Choi , Hong Woo Yu , Ki Sul Cho , Jae Ow Lee , Bo Kyoung Jung
发明人： Young Seok Choi , Hong Woo Yu , Ki Sul Cho , Jae Ow Lee , Bo Kyoung Jung
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036 , G02F1/1345 , G02F1/1362 , H01L27/12
CPC分类号： G02F1/13458 , G02F1/136213 , H01L27/124 , H01L27/1255 , H01L27/1288
摘要： A TFT array substrate is provided. The TFT array substrate includes a gate electrode connected to a gate line; a source electrode connected to a data line, the data line crossing the gate line to define a pixel region; a drain electrode facing the source electrode with a channel interposed therebetween; a semiconductor layer forming the channel between the source electrode and the drain electrode; a channel passivation layer formed on the channel to protect the semiconductor layer; a pixel electrode disposed in the pixel region to contact with the drain electrode; a storage capacitor including the pixel electrode extending over the gate line to form a storage area on a gate insulating layer on which a semiconductor layer pattern and a metal layer pattern are stacked; a gate pad extending from the gate line; and a data pad connected to the data line.
摘要翻译：提供TFT阵列基板。 TFT阵列基板包括连接到栅极线的栅电极; 连接到数据线的源电极，所述数据线与所述栅极线交叉以限定像素区域; 面向源电极的漏电极，其间插入有沟道; 形成源电极和漏电极之间的沟道的半导体层; 形成在沟道上以保护半导体层的沟道钝化层; 设置在所述像素区域中以与所述漏电极接触的像素电极; 存储电容器，包括在所述栅极线上延伸的所述像素电极，以在其上层叠有半导体层图案和金属层图案的栅极绝缘层上形成存储区域; 从栅极线延伸的栅极焊盘; 以及连接到数据线的数据焊盘。

3. 发明授权

US08786792B2 Mother substrate for liquid crystal display device and method of fabricating the same 有权
标题翻译：用于液晶显示装置的母体衬底及其制造方法
公开(公告)号：US08786792B2
公开(公告)日：2014-07-22
申请号：US12654069
申请日：2009-12-09
申请人： Jeong-yeop Lee , Jae-myung Seok , Jae-woo Jung , Young-seok Choi , Hyock-jae Shin
发明人： Jeong-yeop Lee , Jae-myung Seok , Jae-woo Jung , Young-seok Choi , Hyock-jae Shin
IPC分类号： G02F1/1333 , G02F1/1345 , G02F1/1362
CPC分类号： G02F1/133351 , G02F1/136204
摘要： A mother substrate for a liquid crystal display device includes: a substrate; a plurality of unit array patterns on the substrate, each of the plurality of unit array patterns including a gate line, a data line crossing the gate line, a thin film transistor connected to the gate line and the data line and a pixel electrode connected to the thin film transistor; a first electrostatic discharge pattern surrounding the plurality of unit array patterns; a second electrostatic discharge pattern connected to the gate line and crossing the first electrostatic discharge pattern; and a third electrostatic discharge pattern connected to the data line and crossing the first electrostatic discharge pattern, the third electrostatic discharge pattern contacting the second electrostatic discharge pattern.
摘要翻译：液晶显示装置用母基板包括：基板; 多个单元阵列图案，多个单元阵列图案中的每一个包括栅极线，与栅极线交叉的数据线，连接到栅极线和数据线的薄膜晶体管和连接到薄膜晶体管; 围绕所述多个单元阵列图案的第一静电放电图案; 连接到栅极线并与第一静电放电图案交叉的第二静电放电图案; 以及第三静电放电图案，其连接到所述数据线并与所述第一静电放电图案交叉，所述第三静电放电图案与所述第二静电放电图案接触。

4. 发明申请

US20140079543A1 REGENERATIVE-TYPE FLUID MACHINERY HAVING A GUIDE VANE ON A CHANNEL WALL 有权
标题翻译：在通道墙上具有导向槽的再生型流体动力机械
公开(公告)号：US20140079543A1
公开(公告)日：2014-03-20
申请号：US14119697
申请日：2012-05-09
申请人： Kyoung Yong Lee , Young Seok Choi
发明人： Kyoung Yong Lee , Young Seok Choi
IPC分类号： F04D29/44
CPC分类号： F04D29/44 , F04D5/008
摘要： Disclosed is a regenerative fluid machine having guide vanes on a flow channel wall. The regenerative fluid machine includes a circular plate-shaped impeller having a plurality of vanes radially formed on an outer circumference thereof at regular intervals, casings in which the impeller is housed, and flow channels, each of which has a suction hole and a discharge hole in opposite ends thereof, and which are circumferentially disposed within the casings so as to face the vanes. The plurality of guide vanes having an inclined angle (θ) with respect to a radial direction protrude from the flow channel wall in a rotational direction of the impeller so that a relative inflow angle (β) of the fluid introduced into the impeller grooves is increased and thus an absolute inflow angle (α) is decreased.
摘要翻译：公开了一种在流道壁上具有导向叶片的再生流体机械。再生流体机械包括：圆板状叶轮，其具有规则间隔径向形成在其外周上的多个叶片，容纳叶轮的壳体和流路，每个流路具有吸入孔和排出孔在其相对端部，并且周向地设置在壳体内，以便面对叶片。相对于径向具有倾斜角度（＆amp;θ）的多个导向叶片沿着叶轮的旋转方向从流动通道壁突出，使得引入叶轮槽的流体的相对流入角（＆amp; bgr）增加，因此绝对流入角（α）降低。

5. 发明授权

US08545940B2 Atomic layer deposition apparatus 有权
标题翻译：原子层沉积装置
公开(公告)号：US08545940B2
公开(公告)日：2013-10-01
申请号：US13598998
申请日：2012-08-30
申请人： Seung Woo Choi , Gwang Lae Park , Chun Soo Lee , Jeong Ho Lee , Young Seok Choi
发明人： Seung Woo Choi , Gwang Lae Park , Chun Soo Lee , Jeong Ho Lee , Young Seok Choi
IPC分类号： C23C16/18 , C23C16/455 , C23C16/06
CPC分类号： C23C16/45591 , C23C16/45504 , C23C16/45527 , H01L21/68742 , H01L21/68792
摘要： A reactor configured to subject a substrate to alternately repeated surface reactions of vapor-phase reactants is disclosed. The reactor may include a reaction chamber that defines a reaction space and a gas flow control guide structure; and a substrate holder. The gas flow control guide includes one or more channels. Each of the channels widens as the channel extends from the inlet to the reaction space. At least one of the channels is configured to generate a non-uniform laminar flow at a first portion of the periphery of the reaction space such that the laminar flow includes a plurality of flow paths that provide different amounts of a fluid. The reaction chamber may include a reactor base and a reactor cover detachable from each other; and a driver configured to independently adjust at least three portions of the reactor base to provide a substantially perfect seal to the reactor space.
摘要翻译：公开了一种被配置成使基板交替重复表面反应的反应器的反应器。反应器可以包括限定反应空间和气体流量控制引导结构的反应室; 和基板支架。气体流量控制引导件包括一个或多个通道。当通道从入口延伸到反应空间时，每个通道变宽。至少一个通道构造成在反应空间的周边的第一部分处产生不均匀的层流，使得层流包括提供不同量的流体的多个流动路径。反应室可以包括可以彼此分离的反应器基座和反应器盖; 以及被配置为独立地调整反应器基座的至少三个部分以向反应器空间提供基本上完美的密封的驱动器。

6. 发明授权

US08507301B2 TFT array substrate and the fabrication method thereof 有权
标题翻译： TFT阵列基板及其制造方法
公开(公告)号：US08507301B2
公开(公告)日：2013-08-13
申请号：US12591657
申请日：2009-11-25
申请人： Young Seok Choi , Hong Woo Yu , Ki Sul Cho , Jae Ow Lee , Bo Kyoung Jung
发明人： Young Seok Choi , Hong Woo Yu , Ki Sul Cho , Jae Ow Lee , Bo Kyoung Jung
IPC分类号： H01L21/00
CPC分类号： H01L27/12 , H01L27/1248 , H01L27/1288 , H01L29/458
摘要： A TFT array substrate includes: a gate electrode connected to a gate line; a source electrode connected to a data line crossing the gate line to define a pixel region; a drain electrode which is opposite to the source electrode with a channel in between; a semiconductor layer defining the channel between the source electrode and the drain electrode; a pixel electrode in the pixel region and connected to the drain electrode; a channel passivation layer on the channel of the semiconductor layer; a gate pad extending from the gate line, where a semiconductor pattern and a transparent conductive pattern are formed; a data pad connected to the data line, where the transparent conductive pattern is formed; and a gate insulating layer formed under the semiconductor layer, the gate line and the gate pad, and the data line and the data pad.
摘要翻译： TFT阵列基板包括：连接到栅极线的栅电极; 源极连接到与栅极线交叉以限定像素区域的数据线; 漏电极，其与源电极相对，沟道位于其间; 限定所述源电极和所述漏电极之间的沟道的半导体层; 像素区域中的像素电极并连接到漏电极; 在半导体层的沟道上的沟道钝化层; 从栅极线延伸的栅极焊盘，其中形成半导体图案和透明导电图案; 连接到数据线的数据焊盘，其中形成透明导电图案; 以及形成在半导体层下方的栅极绝缘层，栅极线和栅极焊盘，以及数据线和数据焊盘。

7. 发明授权

US08282735B2 Atomic layer deposition apparatus 有权
标题翻译：原子层沉积装置
公开(公告)号：US08282735B2
公开(公告)日：2012-10-09
申请号：US12324178
申请日：2008-11-26
申请人： Seung Woo Choi , Gwang Lae Park , Chun Soo Lee , Jeong Ho Lee , Young Seok Choi
发明人： Seung Woo Choi , Gwang Lae Park , Chun Soo Lee , Jeong Ho Lee , Young Seok Choi
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45591 , C23C16/45504 , C23C16/45527 , H01L21/68742 , H01L21/68792
摘要： A reactor configured to subject a substrate to alternately repeated surface reactions of vapor-phase reactants is disclosed. In one embodiment, the reactor includes a reaction chamber that defines a reaction space; one or more inlets; an exhaust outlet; a gas flow control guide structure; and a substrate holder. The gas flow control guide includes one or more channels, each of which extends from a respective one of the one or more inlets to a first portion of a periphery of the reaction space. Each of the channels widens as the channel extends from the inlet to the reaction space. At least one of the channels is configured to generate a non-uniform laminar flow at the first portion of the periphery of the reaction space such that the laminar flow includes a plurality of flow paths that provide different amounts of a fluid. The reaction chamber may include a reactor base and a reactor cover detachable from each other; and a driver configured to independently adjust at least three portions of the reactor base to provide a substantially perfect seal to the reactor space.
摘要翻译：公开了一种被配置成使基板交替重复表面反应的反应器的反应器。在一个实施方案中，反应器包括限定反应空间的反应室; 一个或多个入口; 排气口气流控制引导结构; 和基板支架。气体流量控制引导件包括一个或多个通道，每个通道从一个或多个入口中的相应一个入口延伸到反应空间的外围的第一部分。当通道从入口延伸到反应空间时，每个通道变宽。至少一个通道构造成在反应空间的周边的第一部分处产生不均匀的层流，使得层流包括提供不同量的流体的多个流动路径。反应室可以包括可以彼此分离的反应器基座和反应器盖; 以及被配置为独立地调整反应器基座的至少三个部分以向反应器空间提供基本上完美的密封的驱动器。

8. 发明授权

US08178883B2 Array substrate for liquid crystal display device and fabricating method of the same 有权
标题翻译：液晶显示装置用阵列基板及其制造方法
公开(公告)号：US08178883B2
公开(公告)日：2012-05-15
申请号：US12314337
申请日：2008-12-08
申请人： Ki-Sul Cho , Young-Seok Choi , Byung-Yong Ahn , Tae-Ung Hwang , Dong-Jun Min , Bo-Kyoung Jung
发明人： Ki-Sul Cho , Young-Seok Choi , Byung-Yong Ahn , Tae-Ung Hwang , Dong-Jun Min , Bo-Kyoung Jung
IPC分类号： H01L27/14
CPC分类号： H01L27/1288 , G02F1/1362 , G02F2001/136231 , G02F2001/136236 , H01L27/1214
摘要： A method of manufacturing an array substrate for a liquid crystal display device includes forming a gate line, a gate pad, a gate electrode, and a data pad on a substrate through a first mask process, forming a gate insulating layer on a substantial part of an entire surface of the substrate including the gate line, the gate pad, the gate electrode, and the data pad, forming a data line, a source-drain pattern and an active layer on the gate insulating layer and forming a gate pad contact hole and a data pad contact hole in the gate insulating layer through a second mask process, and forming a pixel electrode, a gate pad terminal, a data pad terminal, a source electrode, a drain electrode, and an ohmic contact layer through a third mask process.
摘要翻译：制造液晶显示装置用阵列基板的方法包括：通过第一掩模工艺在基板上形成栅极线，栅极焊盘，栅电极和数据焊盘，在绝缘层的大部分上形成栅极绝缘层包括栅极线，栅极焊盘，栅极电极和数据焊盘的基板的整个表面，在栅极绝缘层上形成数据线，源极 - 漏极图案和有源层，并形成栅极焊盘接触孔以及通过第二掩模处理在栅极绝缘层中的数据焊盘接触孔，并且通过第三掩模形成像素电极，栅极焊盘端子，数据焊盘端子，源极，漏电极和欧姆接触层处理。

9. 发明授权

US07960199B2 Thin film transistor (TFT) array substrate and fabricating method thereof that protect the TFT and a pixel electrode without a protective film 有权
标题翻译：薄膜晶体管（TFT）阵列基板及其保护TFT和不带保护膜的像素电极的制造方法
公开(公告)号：US07960199B2
公开(公告)日：2011-06-14
申请号：US12541569
申请日：2009-08-14
申请人： Young Seok Choi , Byung Yong Ahn , Ki Su Cho , Hong Woo Yu
发明人： Young Seok Choi , Byung Yong Ahn , Ki Su Cho , Hong Woo Yu
IPC分类号： H01L33/00
CPC分类号： H01L29/41733 , G02F1/136209 , G02F2001/136236 , G02F2001/13629 , H01L27/12 , H01L27/1248 , H01L27/1288
摘要： A thin film transistor array substrate and a fabricating method thereof are disclosed. The thin film transistor array substrate protects a thin film transistor without a protective film and accordingly reduces the manufacturing cost. In the thin film transistor array substrate, a gate electrode is connected to a gate line. A source electrode is connected to a data line crossing the gate line to define a pixel area. A drain electrode is opposed to the source electrode with a channel therebetween. A semiconductor layer is in the channel. A pixel electrode in the pixel area contacts the drain electrode over substantially the entire overlapping area between the two. A channel protective film is provided on the semiconductor layer corresponding to the channel to protect the semiconductor layer.
摘要翻译：公开了薄膜晶体管阵列基板及其制造方法。薄膜晶体管阵列基板保护薄膜晶体管而没有保护膜，从而降低制造成本。在薄膜晶体管阵列基板中，栅电极连接到栅极线。源电极连接到与栅极线交叉的数据线，以限定像素区域。漏电极与源电极相对，其间具有沟道。半导体层在通道中。像素区域中的像素电极在两者之间的整个重叠区域上接触漏电极。在对应于沟道的半导体层上提供沟道保护膜以保护半导体层。

10. 发明授权

US07804089B2 TFT array substrate and the fabrication method thereof 有权
标题翻译： TFT阵列基板及其制造方法
公开(公告)号：US07804089B2
公开(公告)日：2010-09-28
申请号：US11289506
申请日：2005-11-30
申请人： Young Seok Choi , Hong Woo Yu , Ki Sul Cho , Jae Ow Lee , Bo Kyoung Jung
发明人： Young Seok Choi , Hong Woo Yu , Ki Sul Cho , Jae Ow Lee , Bo Kyoung Jung
IPC分类号： H01L31/00
CPC分类号： G02F1/13458 , G02F2001/136236 , H01L27/1214 , H01L27/124 , H01L27/1255 , H01L27/1288
摘要： A TFT array substrate is provided. The TFT array substrate includes: a gate electrode connected to a gate line; a source electrode connected to a data line that crosses the gate line and defines a pixel region; a drain electrode facing the source electrode with a channel between; a semiconductor layer forming the channel in between the source electrode and the drain electrode; a pixel electrode in the pixel region and contacting the drain electrode; a channel passivation layer formed on the semiconductor layer; a gate pad with a gate pad lower electrode that extends from the gate line; and a data pad having a data pad lower electrode separated from the data line.
摘要翻译：提供TFT阵列基板。 TFT阵列基板包括：栅极连接到栅极线; 源极连接到与栅极线交叉并限定像素区域的数据线; 面向源电极的漏电极，其间具有通道; 在源电极和漏电极之间形成沟道的半导体层; 像素区域中的像素电极并与漏电极接触; 形成在所述半导体层上的沟道钝化层; 栅极焊盘，其具有从栅极线延伸的栅极焊盘下部电极; 以及具有与数据线分离的数据焊盘下电极的数据焊盘。

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