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1. 发明授权

US08035193B2 Method of fabricating capacitor in semiconductor device 失效
标题翻译：在半导体器件中制造电容器的方法
公开(公告)号：US08035193B2
公开(公告)日：2011-10-11
申请号：US12343379
申请日：2008-12-23
申请人： Kwan-Woo Do , Kee-Jeung Lee , Deok-Sin Kil , Young-Dae Kim , Jin-Hyock Kim , Kyung-Woong Park , Jeong-Yeop Lee
发明人： Kwan-Woo Do , Kee-Jeung Lee , Deok-Sin Kil , Young-Dae Kim , Jin-Hyock Kim , Kyung-Woong Park , Jeong-Yeop Lee
IPC分类号： H01L27/00
CPC分类号： H01L28/65
摘要： A capacitor includes a bottom electrode, a dielectric layer and a top electrode over a substrate. A RuXTiYOZ film is included in at least one of the bottom and top electrodes, where x, y and z are positive real numbers. A method of fabricating the capacitor through a sequential formation of a bottom electrode, a dielectric layer and a top electrode over a substrate includes forming a RuXTiYOZ film during a formation of at least one of the bottom electrode and top electrode, where x, y and z are positive real numbers.
摘要翻译：电容器包括底部电极，电介质层和衬底上的顶部电极。至少一个底部电极和顶部电极中包含RuXTiYOZ膜，其中x，y和z为正实数。通过顺序形成底部电极，电介质层和衬底上的顶部电极来制造电容器的方法包括在形成底部电极和顶部电极中的至少一个时形成RuXTiYOZ膜，其中x，y和 z是正实数。

2. 发明申请

US20090261454A1 CAPACITOR IN SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 失效
标题翻译：半导体器件中的电容器及其制造方法
公开(公告)号：US20090261454A1
公开(公告)日：2009-10-22
申请号：US12343379
申请日：2008-12-23
申请人： Kwan-Woo DO , Kee-Jeung LEE , Deok-Sin KIL , Young-Dae KIM , Jin-Hyock KIM , Kyung-Woong PARK , Jeong-Yeop LEE
发明人： Kwan-Woo DO , Kee-Jeung LEE , Deok-Sin KIL , Young-Dae KIM , Jin-Hyock KIM , Kyung-Woong PARK , Jeong-Yeop LEE
IPC分类号： H01L27/00 , H01L21/71
CPC分类号： H01L28/65
摘要： A capacitor includes a bottom electrode, a dielectric layer and a top electrode over a substrate. A RuXTiYOZ film is included in at least one of the bottom and top electrodes, where x, y and z are positive real numbers. A method of fabricating the capacitor through a sequential formation of a bottom electrode, a dielectric layer and a top electrode over a substrate includes forming a RuXTiYOZ film during a formation of at least one of the bottom electrode and top electrode, where x, y and z are positive real numbers.
摘要翻译：电容器包括底部电极，电介质层和衬底上的顶部电极。至少一个底部电极和顶部电极中包含RuXTiYOZ膜，其中x，y和z为正实数。通过顺序形成底部电极，电介质层和衬底上的顶部电极来制造电容器的方法包括在形成底部电极和顶部电极中的至少一个时形成RuXTiYOZ膜，其中x，y和 z是正实数。

3. 发明授权

US06696769B2 Mode switch assembly of automobile having impact/load absorbing apparatus 有权
标题翻译：具有冲击/负载吸收装置的汽车模式开关组件
公开(公告)号：US06696769B2
公开(公告)日：2004-02-24
申请号：US10114437
申请日：2002-04-03
申请人： Jeong-yeop Lee , Tae-soo Chun , Seung-hyung Yun
发明人： Jeong-yeop Lee , Tae-soo Chun , Seung-hyung Yun
IPC分类号： H01H308
CPC分类号： B60R21/055 , H01H3/08 , H01H9/02 , H01H2003/026 , H01H2003/0286 , H05K1/02 , Y10T16/506
摘要： A mode switch assembly of an automobile having an impact/load absorbing apparatus includes a housing disposed in a center facia panel in an automobile, a circuit board installed in the housing, on which a switch having a shaft is installed, a support portion for supporting the circuit board a distance from the housing, a knob on the shaft and protruding from the center facia panel, and an impact/load absorbing unit so the knob and the shaft retract with respect to the center facia panel, breaking at least one side of the circuit board or the housing, when an impact/load is applied to the shaft through the knob.
摘要翻译：具有冲击/负载吸收装置的汽车的模式开关组件包括设置在汽车中的中心面板上的壳体，安装在壳体中的电路板，其上安装有轴的开关，支撑部分，用于支撑电路板与壳体相距一定距离，轴上的旋钮并从中心面板突出，以及冲击/负载吸收单元，使得旋钮和轴相对于中心面板退回，至少破坏了当冲击/负载通过旋钮施加到轴时，电路板或外壳。

4. 发明授权

US07858405B2 Process condition evaluation method for liquid crystal display module 有权
标题翻译：液晶显示模块的工艺条件评估方法
公开(公告)号：US07858405B2
公开(公告)日：2010-12-28
申请号：US12314695
申请日：2008-12-15
申请人： Jeong-Yeop Lee , Hoon Choi , Young Seok Choi , Kwang-Sik Oh
发明人： Jeong-Yeop Lee , Hoon Choi , Young Seok Choi , Kwang-Sik Oh
IPC分类号： H01L21/66 , G01R31/26 , G01R31/00
CPC分类号： G09G3/006 , G09G3/3648
摘要： A process condition evaluation method for a liquid crystal display module (LCM) includes: a first step of obtaining a threshold power measuring pattern, an analysis sample for a cell bonding status in an LCD fabrication process, and obtaining a lower substrate sample by separating an upper substrate from the threshold power measuring pattern; a second step of supplying voltages on a gate pad on the lower substrate sample with sequentially increasing a voltage level by a predetermined unit by using an electrical device, and obtaining a threshold current and a threshold voltage by measuring currents at a drain pad whenever voltage increased by a predetermined unit is applied to the gate pad; and a third step of obtaining threshold power based on the threshold current and the threshold voltage, and thereby evaluating process conditions of the LCM.
摘要翻译：液晶显示模块（LCM）的工艺条件评估方法包括：获得阈值功率测量图案的第一步骤，LCD制造工艺中的单元接合状态的分析样本，以及通过分离下一个上基板从阈值功率测量图案; 第二步骤，通过使用电气装置依次增加预定单位的电压电平，在下部基板样品上的栅极焊盘上提供电压，并且每当电压增加时，通过测量漏极焊盘处的电流来获得阈值电流和阈值电压通过预定单元施加到栅极焊盘; 以及第三步骤，基于阈值电流和阈值电压获得阈值功率，从而评估LCM的处理条件。

5. 发明申请

US20100012989A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100012989A1
公开(公告)日：2010-01-21
申请号：US12346522
申请日：2008-12-30
申请人： Kee-Jeung LEE , Jae-Sung ROH , Deok-Sin KIL , Young-Dae KIM , Jin-Hyock KIM , Kwan-Woo DO , Kyung-Woong PARK , Jeong-Yeop LEE
发明人： Kee-Jeung LEE , Jae-Sung ROH , Deok-Sin KIL , Young-Dae KIM , Jin-Hyock KIM , Kwan-Woo DO , Kyung-Woong PARK , Jeong-Yeop LEE
IPC分类号： H01L29/78 , H01L21/311 , H01L21/4763
CPC分类号： H01L21/31111 , H01L21/3146 , H01L21/3185 , H01L27/10808 , H01L27/10852 , H01L28/91
摘要： A semiconductor device, and a method of fabricating the semiconductor device, which is able to prevent a leaning phenomenon from occurring between the adjacent storage nodes. The method includes forming a plurality of multi-layered pillar type storage nodes each of which is buried in a plurality of mold layers, wherein the uppermost layers of the multi-layered pillar type storage nodes are fixed by a support layer, etching a portion of the support layer to form an opening, and supplying an etch solution through the opening to remove the multiple mold layers. A process of depositing and etching the mold layer by performing the process 2 or more times to form the multi-layered pillar type storage node. Thus, the desired capacitance is sufficiently secured and the leaning phenomenon is avoided between adjacent storage nodes.
摘要翻译：半导体器件以及制造该半导体器件的方法，其能够防止在相邻存储节点之间发生倾斜现象。该方法包括：形成多个多层支柱型存储节点，每个堆叠在多个模具层中，其中多层支柱型存储节点的最上层由支撑层固定，蚀刻一部分所述支撑层形成开口，并且通过所述开口提供蚀刻溶液以移除所述多个模具层。通过进行2次以上的处理来沉积和蚀刻成形层的工序，形成多层支柱型存储节点。因此，充分确保期望的电容，并且避免相邻存储节点之间的倾斜现象。

6. 发明授权

US08372746B2 Electrode of semiconductor device and method for fabricating capacitor 失效
标题翻译：半导体器件的电极及制造电容器的方法
公开(公告)号：US08372746B2
公开(公告)日：2013-02-12
申请号：US12824670
申请日：2010-06-28
申请人： Kwan-Woo Do , Kee-Jeung Lee , Kyung-Woong Park , Jeong-Yeop Lee
发明人： Kwan-Woo Do , Kee-Jeung Lee , Kyung-Woong Park , Jeong-Yeop Lee
IPC分类号： H01L21/44
CPC分类号： H01L29/4966 , H01L28/75 , H01L29/47 , H01L29/92 , H01L29/94
摘要： An electrode of a semiconductor device includes a TiCN layer and a TiN layer. A method for fabricating an electrode of a semiconductor device includes preparing a substrate, forming a TiCN layer, and forming a TiN layer.
摘要翻译：半导体器件的电极包括TiCN层和TiN层。制造半导体器件的电极的方法包括制备衬底，形成TiCN层并形成TiN层。

7. 发明申请

US20130022744A1 METHOD OF FORMING NOBLE METAL LAYER USING OZONE REACTION GAS 审中-公开
标题翻译：使用臭氧反应气体形成金属层的方法
公开(公告)号：US20130022744A1
公开(公告)日：2013-01-24
申请号：US13612505
申请日：2012-09-12
申请人： Deok-Sin KIL , Kee-Jeung LEE , Young-Dae KIM , Jin-Hyock KIM , Kwan-Woo DO , Kyung-Woong PARK , Jeong-Yeop LEE , Ja-Yong KIM
发明人： Deok-Sin KIL , Kee-Jeung LEE , Young-Dae KIM , Jin-Hyock KIM , Kwan-Woo DO , Kyung-Woong PARK , Jeong-Yeop LEE , Ja-Yong KIM
IPC分类号： C23C16/06
CPC分类号： H01L21/28562 , C23C16/045 , C23C16/18 , C23C16/44 , C23C16/45525 , H01L21/28556 , H01L21/76843 , H01L21/76846 , H01L21/76865 , H01L21/7687 , H01L21/76873 , H01L27/105 , H01L27/11502 , H01L28/65
摘要： A noble metal layer is formed using ozone (O3) as a reaction gas.
摘要翻译：使用臭氧（O 3）作为反应气体形成贵金属层。

8. 发明授权

US08148231B2 Method of fabricating capacitor 有权
标题翻译：制造电容器的方法
公开(公告)号：US08148231B2
公开(公告)日：2012-04-03
申请号：US12344182
申请日：2008-12-24
申请人： Kwan-Woo Do , Kee-Jeung Lee , Deok-Sin Kil , Young-Dae Kim , Jin-Hyock Kim , Kyung-Woong Park , Jeong-Yeop Lee
发明人： Kwan-Woo Do , Kee-Jeung Lee , Deok-Sin Kil , Young-Dae Kim , Jin-Hyock Kim , Kyung-Woong Park , Jeong-Yeop Lee
IPC分类号： H01L21/44
CPC分类号： C23C16/45525 , C23C16/16 , H01L28/60 , Y10T29/435
摘要： A semiconductor device and a method of fabricating the same include an electrode having a nickel layer with impurities. The electrode having a nickel layer with impurities can be a gate electrode or a capacitor electrode. The electrode having a nickel layer with impurities may include a combination of a pure nickel layer and a nickel layer with impurities.
摘要翻译：半导体器件及其制造方法包括具有杂质的镍层的电极。具有杂质的镍层的电极可以是栅电极或电容电极。具有带有杂质的镍层的电极可以包括纯镍层和具有杂质的镍层的组合。

9. 发明申请

US20110070670A1 PROCESS CONDITION EVALUATION METHOD FOR LIQUID CRYSTAL DISPLAY MODULE 有权
标题翻译：液晶显示模块的工艺条件评估方法
公开(公告)号：US20110070670A1
公开(公告)日：2011-03-24
申请号：US12958031
申请日：2010-12-01
申请人： Jeong-Yeop LEE , Hoon Choi , Young Seok Choi , Kwang-Sik Oh
发明人： Jeong-Yeop LEE , Hoon Choi , Young Seok Choi , Kwang-Sik Oh
IPC分类号： H01L21/66
CPC分类号： G09G3/006 , G09G3/3648
摘要： A process condition evaluation method for a liquid crystal display module (LCM) includes: a first step of obtaining a threshold power measuring pattern, an analysis sample for a cell bonding status in an LCD fabrication process, and obtaining a lower substrate sample by separating an upper substrate from the threshold power measuring pattern; a second step of supplying voltages on a gate pad on the lower substrate sample with sequentially increasing a voltage level by a predetermined unit by using an electrical device, and obtaining a threshold current and a threshold voltage by measuring currents at a drain pad whenever voltage increased by a predetermined unit is applied to the gate pad; and a third step of obtaining threshold power based on the threshold current and the threshold voltage, and thereby evaluating process conditions of the LCM.
摘要翻译：液晶显示模块（LCM）的工艺条件评估方法包括：获得阈值功率测量图案的第一步骤，LCD制造工艺中的单元接合状态的分析样本，以及通过分离下一个上基板从阈值功率测量图案; 第二步骤，通过使用电气装置依次增加预定单位的电压电平，在下部基板样品上的栅极焊盘上提供电压，并且每当电压增加时，通过测量漏极焊盘处的电流来获得阈值电流和阈值电压通过预定单元施加到栅极焊盘; 以及第三步骤，基于阈值电流和阈值电压获得阈值功率，从而评估LCM的处理条件。

10. 发明申请

US20130164903A1 METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE 有权
标题翻译：用于制造半导体器件电容器的方法
公开(公告)号：US20130164903A1
公开(公告)日：2013-06-27
申请号：US13468319
申请日：2012-05-10
申请人： Jeong-Yeop Lee , Hyung-Soon Park , Young-Bang Lee , Su-Young Kim
发明人： Jeong-Yeop Lee , Hyung-Soon Park , Young-Bang Lee , Su-Young Kim
IPC分类号： H01L21/02
CPC分类号： H01L28/90 , H01L27/10852
摘要： A method for fabricating a capacitor of a semiconductor device includes sequentially forming an etch-stop layer and a mold layer over a substrate, sequentially forming a support layer and a hard mask pattern over the mold layer, forming a storage node hole by etching the support layer and the mold layer using the hard mask pattern as an etch barrier, forming a barrier layer on the sidewall of the mold layer inside the storage node hole, etching the etch-stop layer under the storage node hole, forming a storage node inside the storage node hole, and removing the hard mask pattern, the mold layer, and the barrier layer.
摘要翻译：一种用于制造半导体器件的电容器的方法包括在衬底上顺序地形成蚀刻停止层和模具层，在模具层上依次形成支撑层和硬掩模图案，通过蚀刻支撑体形成存储节点孔层和模具层，使用硬掩模图案作为蚀刻阻挡层，在存储节点孔内部的模具层的侧壁上形成阻挡层，蚀刻存储节点孔下方的蚀刻停止层，在其内部形成存储节点存储节点孔，以及去除硬掩模图案，模具层和阻挡层。

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