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    • 2. 发明申请
    • Magnetic random access memory device and method of forming the same
    • 磁性随机存取存储器件及其形成方法
    • US20060174473A1
    • 2006-08-10
    • US11347280
    • 2006-02-06
    • Se-Chung OhJang-Eun LeeJun-Soo BaeHyun-Jo KimKyung-Tae NamYoung-Ki Ha
    • Se-Chung OhJang-Eun LeeJun-Soo BaeHyun-Jo KimKyung-Tae NamYoung-Ki Ha
    • G11B5/33G11B5/127H04R31/00
    • G11C11/16B82Y10/00B82Y25/00G11B5/3909H01L27/228H01L43/08H01L43/12Y10T29/49034Y10T29/49044
    • Example embodiments of the present invention disclose a semiconductor memory device and a method of forming a memory device. A semiconductor memory device may include a digit line disposed on a substrate, an intermediate insulating layer covering the digit line, a magnetic tunnel junction (MTJ) pattern disposed on the intermediate insulating layer and over the digit line, the MTJ pattern including a sequentially stacked lower magnetic pattern, upper magnetic pattern, and capping pattern, wherein the capping pattern does not react with the upper magnetic pattern at a temperature above about 280° C., and a bit line connected to the capping pattern and disposed to intersect the digit line. A method of forming a semiconductor memory device may include forming a digit line on a substrate, forming an intermediate insulating layer covering the digit line, forming a magnetic tunnel junction (MTJ) pattern on the intermediate insulating layer, the MTJ pattern including a sequentially stacked lower magnetic pattern, upper magnetic pattern, and capping pattern, wherein the capping pattern does not react with the upper magnetic pattern at a temperature above about 280° C., performing an annealing operation at a temperature of about 350° C. or higher, and forming a bit line connected to the capping pattern and disposed to intersect the digit line.
    • 本发明的示例性实施例公开了半导体存储器件和形成存储器件的方法。 半导体存储器件可以包括设置在衬底上的数字线,覆盖数字线的中间绝缘层,设置在中间绝缘层上方和数字线上的磁性隧道结(MTJ)图案,MTJ图案包括顺序堆叠 下磁性图案,上磁性图案和封盖图案,其中封盖图案在高于约280℃的温度下不与上磁性图案反应,而位线连接到封盖图案并且设置成与数字线相交 。 形成半导体存储器件的方法可以包括在衬底上形成数字线,形成覆盖数字线的中间绝缘层,在中间绝缘层上形成磁隧道结(MTJ)图案,MTJ图案包括顺序层叠的 较低的磁性图案,上部磁性图案和封盖图案,其中封盖图案在高于约280℃的温度下不与上部磁性图案反应,在约350℃或更高的温度下进行退火操作, 并且形成连接到所述封盖图案并且设置成与所述数字线相交的位线。
    • 8. 发明申请
    • Method of writing to MRAM devices
    • 写入MRAM设备的方法
    • US20060039190A1
    • 2006-02-23
    • US11097495
    • 2005-04-01
    • Hyun-Jo KimJang-Eun LeeSe-Chung OhJun-Soo BaeYoung-Ki HaKyung-Tae Nam
    • Hyun-Jo KimJang-Eun LeeSe-Chung OhJun-Soo BaeYoung-Ki HaKyung-Tae Nam
    • G11C11/00
    • G11C11/16
    • A method of writing to magnetic random access memory (MRAM) devices is provided. The method includes preparing a digit line disposed on a semiconductor substrate, a bit line crossing over the digit line, and a magnetic tunnel junction (MTJ) interposed between the digit line and the bit line. The MTJ has a pinned layer, a tunneling insulating layer, and a synthetic anti-ferromagnetic (SAF) free layer which are sequentially stacked. In addition, the SAF free layer has a bottom free layer and a top free layer which are separated by an exchange spacer layer. An initial magnetization state of the MTJ is read and compared with a desired magnetization state. When the initial magnetization state is different from the desired magnetization state, a first write line pulse is applied to one of the digit line and the bit line, and a second write line pulse is applied to the other of the digit line and the bit line, thereby changing the magnetization state of the MTJ. The MTJ may be disposed at an angle equal to or greater than 0° and less than 90° to a line to which the second write line pulse is applied.
    • 提供了一种写入磁性随机存取存储器(MRAM)器件的方法。 该方法包括准备设置在半导体衬底上的数字线,与数字线交叉的位线以及置于数字线和位线之间的磁性隧道结(MTJ)。 MTJ具有钉扎层,隧道绝缘层和顺序层叠的合成反铁磁(SAF)层。 此外,SAF自由层具有由交换间隔层隔开的无底层和顶部自由层。 读取MTJ的初始磁化状态并与期望的磁化状态进行比较。 当初始磁化状态不同于期望的磁化状态时,第一写入线脉冲被施加到数字线和位线之一,并且第二写入线脉冲被施加到数字线和位线中的另一个 ,从而改变MTJ的磁化状态。 MTJ可以以与第二写入线脉冲施加的线等于或大于0°且小于90°的角度布置。