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1. 发明授权

US07352021B2 Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier 有权
标题翻译：磁性随机存取存储器件具有具有氧化物层和定向隧道势垒的富含钛的下电极
公开(公告)号：US07352021B2
公开(公告)日：2008-04-01
申请号：US10888964
申请日：2004-07-09
申请人： Jun-Soo Bae , Jang-Eun Lee , Hyun-Jo Kim , In-Gyu Baek , Young-Ki Ha
发明人： Jun-Soo Bae , Jang-Eun Lee , Hyun-Jo Kim , In-Gyu Baek , Young-Ki Ha
IPC分类号： H01L29/76
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11C11/16 , H01F10/3254 , H01F41/302 , H01L43/08 , H01L43/12
摘要： Magnetic Random Access Memory (MRAM) devices include a lower electrode and a magnetic tunnel junction on the lower electrode. The magnetic tunnel junction includes a seed layer and a tunneling barrier that is oriented in a same direction as the most closely packed plane direction of the seed layer. An oxide layer may be provided between the lower electrode and the magnetic tunnel junction. The lower electrode may be a titanium-rich TiN layer having more than 50 atomic percent titanium content. Analogous fabrication methods are also described.
摘要翻译：磁性随机存取存储器（MRAM）器件包括下电极和下电极上的磁隧道结。磁性隧道结包括种子层和隧道势垒，其定向在与种子层的最紧密堆积的平面方向相同的方向上。可以在下电极和磁隧道结之间提供氧化物层。下电极可以是具有超过50原子％钛含量的富钛TiN层。还描述了类似的制造方法。

2. 发明申请

US20060174473A1 Magnetic random access memory device and method of forming the same 有权
标题翻译：磁性随机存取存储器件及其形成方法
公开(公告)号：US20060174473A1
公开(公告)日：2006-08-10
申请号：US11347280
申请日：2006-02-06
申请人： Se-Chung Oh , Jang-Eun Lee , Jun-Soo Bae , Hyun-Jo Kim , Kyung-Tae Nam , Young-Ki Ha
发明人： Se-Chung Oh , Jang-Eun Lee , Jun-Soo Bae , Hyun-Jo Kim , Kyung-Tae Nam , Young-Ki Ha
IPC分类号： G11B5/33 , G11B5/127 , H04R31/00
CPC分类号： G11C11/16 , B82Y10/00 , B82Y25/00 , G11B5/3909 , H01L27/228 , H01L43/08 , H01L43/12 , Y10T29/49034 , Y10T29/49044
摘要： Example embodiments of the present invention disclose a semiconductor memory device and a method of forming a memory device. A semiconductor memory device may include a digit line disposed on a substrate, an intermediate insulating layer covering the digit line, a magnetic tunnel junction (MTJ) pattern disposed on the intermediate insulating layer and over the digit line, the MTJ pattern including a sequentially stacked lower magnetic pattern, upper magnetic pattern, and capping pattern, wherein the capping pattern does not react with the upper magnetic pattern at a temperature above about 280° C., and a bit line connected to the capping pattern and disposed to intersect the digit line. A method of forming a semiconductor memory device may include forming a digit line on a substrate, forming an intermediate insulating layer covering the digit line, forming a magnetic tunnel junction (MTJ) pattern on the intermediate insulating layer, the MTJ pattern including a sequentially stacked lower magnetic pattern, upper magnetic pattern, and capping pattern, wherein the capping pattern does not react with the upper magnetic pattern at a temperature above about 280° C., performing an annealing operation at a temperature of about 350° C. or higher, and forming a bit line connected to the capping pattern and disposed to intersect the digit line.
摘要翻译：本发明的示例性实施例公开了半导体存储器件和形成存储器件的方法。半导体存储器件可以包括设置在衬底上的数字线，覆盖数字线的中间绝缘层，设置在中间绝缘层上方和数字线上的磁性隧道结（MTJ）图案，MTJ图案包括顺序堆叠下磁性图案，上磁性图案和封盖图案，其中封盖图案在高于约280℃的温度下不与上磁性图案反应，而位线连接到封盖图案并且设置成与数字线相交。形成半导体存储器件的方法可以包括在衬底上形成数字线，形成覆盖数字线的中间绝缘层，在中间绝缘层上形成磁隧道结（MTJ）图案，MTJ图案包括顺序层叠的较低的磁性图案，上部磁性图案和封盖图案，其中封盖图案在高于约280℃的温度下不与上部磁性图案反应，在约350℃或更高的温度下进行退火操作，并且形成连接到所述封盖图案并且设置成与所述数字线相交的位线。

3. 发明申请

US20050035383A1 Magnetic tunnel junction and memory device including the same 有权
标题翻译：磁隧道结和包括其的存储器件
公开(公告)号：US20050035383A1
公开(公告)日：2005-02-17
申请号：US10851387
申请日：2004-05-24
申请人： Young-Ki Ha , Jang-Eun Lee , Hyun-Jo Kim , Jun-Soo Bae , In-Gyu Baek , Se-Chung Oh
发明人： Young-Ki Ha , Jang-Eun Lee , Hyun-Jo Kim , Jun-Soo Bae , In-Gyu Baek , Se-Chung Oh
IPC分类号： G11C11/15 , H01F10/32 , H01L43/08 , H01L29/76
CPC分类号： B82Y25/00 , G11C11/15 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L43/08
摘要： A magnetic tunnel junction device includes a magnetically programmable free magnetic layer. The free magnetic layer includes a lamination of at least two ferromagnetic layers and at least one intermediate layer interposed between the at least two ferromagnetic layers.
摘要翻译：磁性隧道结装置包括可磁性可编程的自由磁性层。自由磁性层包括至少两个铁磁层和至少一个介于至少两个铁磁层之间的中间层的叠层。

4. 发明申请

US20080153179A1 Magnetic random access memory device and method of forming the same 有权
公开(公告)号：US20080153179A1
公开(公告)日：2008-06-26
申请号：US12073098
申请日：2008-02-29
申请人： Se-Chung OH , Jang-Eun LEE , Jun-Soo BAE , Hyun-Jo KIM , Kyung-Tae NAM , Young-Ki HA
发明人： Se-Chung OH , Jang-Eun LEE , Jun-Soo BAE , Hyun-Jo KIM , Kyung-Tae NAM , Young-Ki HA
IPC分类号： H01L21/00
CPC分类号： G11C11/16 , B82Y10/00 , B82Y25/00 , G11B5/3909 , H01L27/228 , H01L43/08 , H01L43/12 , Y10T29/49034 , Y10T29/49044
摘要： Example embodiments of the present invention disclose a semiconductor memory device and a method of forming a memory device. A semiconductor memory device may include a digit line disposed on a substrate, an intermediate insulating layer covering the digit line, a magnetic tunnel junction (MTJ) pattern disposed on the intermediate insulating layer and over the digit line, the MTJ pattern including a sequentially stacked lower magnetic pattern, upper magnetic pattern, and capping pattern, wherein the capping pattern does not react with the upper magnetic pattern at a temperature above about 280° C., and a bit line connected to the capping pattern and disposed to intersect the digit line. A method of forming a semiconductor memory device may include forming a digit line on a substrate, forming an intermediate insulating layer covering the digit line, forming a magnetic tunnel junction (MTJ) pattern on the intermediate insulating layer, the MTJ pattern including a sequentially stacked lower magnetic pattern, upper magnetic pattern, and capping pattern, wherein the capping pattern does not react with the upper magnetic pattern at a temperature above about 280° C., performing an annealing operation at a temperature of about 350° C. or higher, and forming a bit line connected to the capping pattern and disposed to intersect the digit line.

5. 发明授权

US07378698B2 Magnetic tunnel junction and memory device including the same 有权
标题翻译：磁隧道结和包括其的存储器件
公开(公告)号：US07378698B2
公开(公告)日：2008-05-27
申请号：US10851387
申请日：2004-05-24
申请人： Young-Ki Ha , Jang-Eun Lee , Hyun-Jo Kim , Jun-Soo Bae , In-Gyu Baek , Se-Chung Oh
发明人： Young-Ki Ha , Jang-Eun Lee , Hyun-Jo Kim , Jun-Soo Bae , In-Gyu Baek , Se-Chung Oh
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： B82Y25/00 , G11C11/15 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L43/08
摘要： A magnetic tunnel junction device includes a magnetically programmable free magnetic layer. The free magnetic layer includes a lamination of at least two ferromagnetic layers and at least one intermediate layer interposed between the at least two ferromagnetic layers.
摘要翻译：磁性隧道结装置包括可磁性可编程的自由磁性层。自由磁性层包括至少两个铁磁层和至少一个介于至少两个铁磁层之间的中间层的叠层。

6. 发明授权

US07351594B2 Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier 有权
标题翻译：形成具有具有氧化物层的富钛下电极和定向隧道势垒的磁性随机存取存储器件的方法
公开(公告)号：US07351594B2
公开(公告)日：2008-04-01
申请号：US11673612
申请日：2007-02-12
申请人： Jun-Soo Bae , Jang-Eun Lee , Hyun-Jo Kim , In-Gyu Baek , Young-Ki Ha
发明人： Jun-Soo Bae , Jang-Eun Lee , Hyun-Jo Kim , In-Gyu Baek , Young-Ki Ha
IPC分类号： H01L21/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11C11/16 , H01F10/3254 , H01F41/302 , H01L43/08 , H01L43/12
摘要： Magnetic Random Access Memory (MRAM) devices include a lower electrode and a magnetic tunnel junction on the lower electrode. The magnetic tunnel junction includes a seed layer and a tunneling barrier that is oriented in a same direction as the most closely packed plane direction of the seed layer. An oxide layer may be provided between the lower electrode and the magnetic tunnel junction. The lower electrode may be a titanium-rich TiN layer having more than 50 atomic percent titanium content. Analogous fabrication methods are also described.
摘要翻译：磁性随机存取存储器（MRAM）器件包括下电极和下电极上的磁隧道结。磁性隧道结包括种子层和隧道势垒，其定向在与种子层的最紧密堆积的平面方向相同的方向上。可以在下电极和磁隧道结之间提供氧化物层。下电极可以是具有超过50原子％钛含量的富钛TiN层。还描述了类似的制造方法。

7. 发明申请

US20070148789A1 METHODS OF FORMING MAGNETIC RANDOM ACCESS MEMORY DEVICES HAVING TITANIUM-RICH LOWER ELECTRODES WITH OXIDE LAYER AND ORIENTED TUNNELING BARRIER 有权
标题翻译：形成具有氧化物层和面向隧道网的钛电极的磁性随机存取存储器件的方法
公开(公告)号：US20070148789A1
公开(公告)日：2007-06-28
申请号：US11673612
申请日：2007-02-12
申请人： Jun-Soo Bae , Jang-Eun Lee , Hyun-Jo Kim , In-Gyu Baek , Young-Ki Ha
发明人： Jun-Soo Bae , Jang-Eun Lee , Hyun-Jo Kim , In-Gyu Baek , Young-Ki Ha
IPC分类号： H01L21/00 , H01L21/8244
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11C11/16 , H01F10/3254 , H01F41/302 , H01L43/08 , H01L43/12
摘要： Magnetic Random Access Memory (MRAM) devices include a lower electrode and a magnetic tunnel junction on the lower electrode. The magnetic tunnel junction includes a seed layer and a tunneling barrier that is oriented in a same direction as the most closely packed plane direction of the seed layer. An oxide layer may be provided between the lower electrode and the magnetic tunnel junction. The lower electrode may be a titanium-rich TiN layer having more than 50 atomic percent titanium content. Analogous fabrication methods are also described.
摘要翻译：磁性随机存取存储器（MRAM）器件包括下电极和下电极上的磁隧道结。磁性隧道结包括种子层和隧道势垒，其定向在与种子层的最紧密堆积的平面方向相同的方向上。可以在下电极和磁隧道结之间提供氧化物层。下电极可以是具有超过50原子％钛含量的富钛TiN层。还描述了类似的制造方法。

8. 发明申请

US20060039190A1 Method of writing to MRAM devices 有权
标题翻译：写入MRAM设备的方法
公开(公告)号：US20060039190A1
公开(公告)日：2006-02-23
申请号：US11097495
申请日：2005-04-01
申请人： Hyun-Jo Kim , Jang-Eun Lee , Se-Chung Oh , Jun-Soo Bae , Young-Ki Ha , Kyung-Tae Nam
发明人： Hyun-Jo Kim , Jang-Eun Lee , Se-Chung Oh , Jun-Soo Bae , Young-Ki Ha , Kyung-Tae Nam
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method of writing to magnetic random access memory (MRAM) devices is provided. The method includes preparing a digit line disposed on a semiconductor substrate, a bit line crossing over the digit line, and a magnetic tunnel junction (MTJ) interposed between the digit line and the bit line. The MTJ has a pinned layer, a tunneling insulating layer, and a synthetic anti-ferromagnetic (SAF) free layer which are sequentially stacked. In addition, the SAF free layer has a bottom free layer and a top free layer which are separated by an exchange spacer layer. An initial magnetization state of the MTJ is read and compared with a desired magnetization state. When the initial magnetization state is different from the desired magnetization state, a first write line pulse is applied to one of the digit line and the bit line, and a second write line pulse is applied to the other of the digit line and the bit line, thereby changing the magnetization state of the MTJ. The MTJ may be disposed at an angle equal to or greater than 0° and less than 90° to a line to which the second write line pulse is applied.
摘要翻译：提供了一种写入磁性随机存取存储器（MRAM）器件的方法。该方法包括准备设置在半导体衬底上的数字线，与数字线交叉的位线以及置于数字线和位线之间的磁性隧道结（MTJ）。 MTJ具有钉扎层，隧道绝缘层和顺序层叠的合成反铁磁（SAF）层。此外，SAF自由层具有由交换间隔层隔开的无底层和顶部自由层。读取MTJ的初始磁化状态并与期望的磁化状态进行比较。当初始磁化状态不同于期望的磁化状态时，第一写入线脉冲被施加到数字线和位线之一，并且第二写入线脉冲被施加到数字线和位线中的另一个，从而改变MTJ的磁化状态。 MTJ可以以与第二写入线脉冲施加的线等于或大于0°且小于90°的角度布置。

9. 发明授权

US06696328B2 CMOS gate electrode using selective growth and a fabrication method thereof 失效
标题翻译： CMOS栅电极及其制造方法
公开(公告)号：US06696328B2
公开(公告)日：2004-02-24
申请号：US10413387
申请日：2003-04-15
申请人： Hwa-sung Rhee , Geum-jong Bae , Sang-su Kim , Jung-il Lee , Young-ki Ha , Ki-chul Kim
发明人： Hwa-sung Rhee , Geum-jong Bae , Sang-su Kim , Jung-il Lee , Young-ki Ha , Ki-chul Kim
IPC分类号： H01L218238
CPC分类号： H01L21/823842 , Y10S438/933
摘要： A CMOS gate electrode formed using a selective growth method and a fabrication method thereof, wherein, in the CMOS gate electrode, a first gate pattern of polysilicon germanium (poly-SiGe) is formed on a PMOS region of a semiconductor substrate, and a second gate pattern of polysilicon is selectively grown from an underlying layer. Although the first gate pattern on the PMOS region is formed of poly-SiGe, the characteristics of the second gate pattern on the NMOS region do not deteriorate, thereby increasing the overall characteristics of a CMOS transistor.
摘要翻译：一种使用选择性生长方法形成的CMOS栅电极及其制造方法，其中在CMOS栅电极中，在半导体衬底的PMOS区上形成多晶硅锗（poly-SiGe）的第一栅极图案，从下层选择性地生长多晶硅的栅极图案。尽管PMOS区上的第一栅极图案是由多晶硅形成的，但NMOS区域上的第二栅极图案的特性不会恶化，从而增加了CMOS晶体管的总体特性。

10. 发明授权

US07582890B2 Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof 有权
标题翻译：在其两端具有弯曲尖端的磁性隧道结结构，使用其的磁性随机存取存储器以及用于其形成的光掩模
公开(公告)号：US07582890B2
公开(公告)日：2009-09-01
申请号：US11103078
申请日：2005-04-11
申请人： Young-Ki Ha , Jang-Eun Lee , Se-Chung Oh , Jun-Soo Bae , Hyun-Jo Kim , Kyung-Tae Nam
发明人： Young-Ki Ha , Jang-Eun Lee , Se-Chung Oh , Jun-Soo Bae , Hyun-Jo Kim , Kyung-Tae Nam
IPC分类号： H01L27/20
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228 , H01L43/08
摘要： Provided are magnetic tunnel junction structures having bended tips at both ends thereof, magnetic RAM cells employing the same and photo masks used in formation thereof. The magnetic tunnel junction structures have a pinned layer pattern, a tunneling insulation layer pattern and a free layer pattern, which are stacked on an integrated circuit substrate. At least the free layer pattern has a main body as well as first and second bended tips each protruded from both ends of the main body when viewed from a plan view.
摘要翻译：提供了在其两端具有弯曲尖端的磁性隧道结结构，使用其的磁性RAM单元和其形成中使用的光掩模。磁性隧道结结构具有钉扎层图案，隧道绝缘层图案和自由层图案，其堆叠在集成电路基板上。至少自由层图案具有主体以及当从俯视图观察时各自从主体的两端突出的第一和第二弯曲末端。

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