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1. 发明申请

US20120140331A1 METHOD FOR FABRICATING MICRO-LENS, AND MICRO-LENS ARRAY INCLUDING THE MICRO-LENS 审中-公开
标题翻译：用于制作微透镜的方法和包括微透镜的微透镜阵列
公开(公告)号：US20120140331A1
公开(公告)日：2012-06-07
申请号：US13163125
申请日：2011-06-17
申请人： Young Je YUN , Jin Ho Park
发明人： Young Je YUN , Jin Ho Park
IPC分类号： G02B27/12 , B05D5/06
CPC分类号： G02B3/0012 , B29D11/00365 , G03F7/0005 , G03F7/0035
摘要： A method for fabricating a micro-lens includes forming a photo-resist film on and/or over a micro-lens formation area of a semiconductor substrate, and then forming a portion of the photo-resist film as a first micro-lens using a first gray-tone mask. A second micro-lens is then formed adjacent to the first micro-lens using another portion of the photo-resist film and a second gray-tone mask.
摘要翻译：一种制造微透镜的方法包括在半导体衬底的微透镜形成区域上和/或之上形成光致抗蚀剂膜，然后使用第一微透镜形成一部分光致抗蚀膜作为第一微透镜第一个灰色蒙版然后使用光致抗蚀剂膜的另一部分和第二灰色调掩模，形成与第一微透镜相邻的第二微透镜。

2. 发明授权

US07723147B2 Image sensor and method of manufacturing the same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US07723147B2
公开(公告)日：2010-05-25
申请号：US11950171
申请日：2007-12-04
申请人： Young-Je Yun , Jin-Ho Park , Sang-Wook Ryu
发明人： Young-Je Yun , Jin-Ho Park , Sang-Wook Ryu
IPC分类号： H01L21/00 , H01L31/0232
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14685
摘要： An image sensor and a method of manufacturing the same capable of improving image quality by preventing the generation of a lens bridge formed due to a mutual connection of neighboring microlenses. The image sensor can include a semiconductor substrate having a plurality of photodiodes formed thereon; an insulation layer formed over the semiconductor substrate; a color filter layer formed over the insulation layer; a planarization layer formed over the whole surface including the color filter layer and having a plularity of concave regions and a convex regions repeatedly arranged in a pixel period; and a microlens formed over each of the concave regions and the convex regions.
摘要翻译：一种图像传感器及其制造方法，其能够通过防止由于相邻微透镜的相互连接而形成的透镜桥的产生而提高图像质量。图像传感器可以包括其上形成有多个光电二极管的半导体衬底; 形成在半导体衬底上的绝缘层; 形成在绝缘层上的滤色器层; 在包括滤色器层的整个表面上形成的平坦化层，并且具有多个凹陷区域和在像素周期中重复排列的凸起区域; 以及形成在每个凹区域和凸区域上的微透镜。

3. 发明申请

US20090140360A1 IMAGE SENSOR AND FABRICATING METHOD THEREOF 审中-公开
标题翻译：图像传感器及其制作方法
公开(公告)号：US20090140360A1
公开(公告)日：2009-06-04
申请号：US12253254
申请日：2008-10-17
申请人： Young-Je Yun
发明人： Young-Je Yun
IPC分类号： H01L31/18 , H01L31/102
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14627 , H01L27/14645 , H01L27/14687
摘要： An image sensor and fabricating method thereof may include a semiconductor substrate, a plurality of photodiodes formed on and/or over the semiconductor substrate, a first insulating layer formed on and/or over the semiconductor substrate including the plurality of photodiodes, at least one metal line formed on and/or over the first insulating layer, a second insulating layer having a plurality of wells formed on and/or over the plurality of photodiodes, a plurality of color filters formed by embedding color filter layers in a plurality of the wells, and a plurality of microlenses formed on and/or over the color filters.
摘要翻译：图像传感器及其制造方法可以包括半导体衬底，形成在半导体衬底之上和/或之上的多个光电二极管，在包括多个光电二极管的半导体衬底上和/或上方形成的第一绝缘层，至少一个金属形成在第一绝缘层上和/或之上的第二绝缘层，具有形成在多个光电二极管上和/或上的多个阱的第二绝缘层，通过在多个阱中嵌入滤色器层而形成的多个滤色器，以及形成在滤色器上和/或上方的多个微透镜。

4. 发明申请

US20080111204A1 Image sensor and method for manufacturing the same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US20080111204A1
公开(公告)日：2008-05-15
申请号：US11980014
申请日：2007-10-29
申请人： Young Je Yun
发明人： Young Je Yun
IPC分类号： H01L31/0232 , H01L21/02
CPC分类号： H01L27/14685 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14643 , H01L27/14687
摘要： A method for manufacturing an image sensor includes forming first to third photodiodes and first to third color filters corresponding thereto; forming a photoresist film including photosensitive materials on the upper surfaces of the first to third color filters; forming a first exposed part by exposing the photoresist film with a first exposure energy using a first pattern mask with a first light transmitting part having a first width at boundaries between the individual color filters; forming a second exposed part overlapping a portion of the first exposed part by exposing the photoresist film with a second exposure energy smaller than the first exposure energy using a second pattern mask with a second light transmitting part having a second width wider than the first width; and forming microlenses by developing the photoresist film.
摘要翻译：一种用于制造图像传感器的方法包括：形成第一至第三光电二极管和对应于其的第一至第三滤色器; 在第一至第三滤色器的上表面上形成包括感光材料的光致抗蚀剂膜; 通过使用具有在各个滤色器之间的边界处具有第一宽度的第一透光部分的第一图案掩模以第一曝光能量曝光所述光致抗蚀剂膜来形成第一曝光部分; 通过使用具有第二宽度大于所述第一宽度的第二宽度的第二透光部分的第二图案掩模，以比所述第一曝光能量小的第二曝光能量曝光所述光致抗蚀剂膜，形成与所述第一曝光部分重叠的第二曝光部分; 并通过显影光致抗蚀剂膜形成微透镜。

5. 发明申请

US20080068476A1 IMAGE DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：图像装置及其制造方法
公开(公告)号：US20080068476A1
公开(公告)日：2008-03-20
申请号：US11775621
申请日：2007-07-10
申请人： Young-Je Yun
发明人： Young-Je Yun
IPC分类号： H04N9/083
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14627 , H01L27/14643
摘要： An image device which includes reflowed color filters. Reflowed color filters may be formed by heat treating preliminary color filters. When preliminary color filters are reflowed, color filters of different colors may be formed continuous with each other. Contiguous color filters in an image device may reduce manufacturing costs, maximize optical efficiency, minimize noise, and/or minimize crosstalk.
摘要翻译：包括回流滤色器的图像装置。可以通过热处理预滤色器形成回流滤色器。当预备彩色滤光片回流时，不同颜色的滤色片可以彼此连续地形成。图像设备中的连续滤色器可以降低制造成本，最大限度地提高光学效率，最小化噪声和/或最小化串扰。

6. 发明授权

US08710563B2 Image sensor and method for fabricating the same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US08710563B2
公开(公告)日：2014-04-29
申请号：US13542159
申请日：2012-07-05
申请人： Young Je Yun , Min Sung Kim
发明人： Young Je Yun , Min Sung Kim
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L31/103 , H01L27/14621 , H01L27/14627 , H01L27/14685
摘要： The present invention discloses an image sensor including photodiodes formed in a semiconductor substrate, a color filter array formed over the photodiodes, and microlenses formed on the color filter array. A first microlens, which may be any one of two adjacent microlenses, includes an upper portion and a lower portion. The lower portion of the first microlens is formed of a material different than a material of the upper portion of the first microlens.
摘要翻译：本发明公开了一种图像传感器，其包括形成在半导体衬底中的光电二极管，形成在光电二极管上的滤色器阵列，以及形成在滤色器阵列上的微透镜。可以是两个相邻微透镜中的任一个的第一微透镜包括上部和下部。第一微透镜的下部由与第一微透镜的上部的材料不同的材料形成。

7. 发明申请

US20130264671A1 Image Sensor and Method for Fabricating the Same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US20130264671A1
公开(公告)日：2013-10-10
申请号：US13542159
申请日：2012-07-05
申请人： Young Je YUN , Min Sung KIM
发明人： Young Je YUN , Min Sung KIM
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L31/103 , H01L27/14621 , H01L27/14627 , H01L27/14685
摘要： The present invention discloses an image sensor including photodiodes formed in a semiconductor substrate, a color filter array formed over the photodiodes, and microlenses formed on the color filter array. A first microlens, which may be any one of two adjacent microlenses, includes an upper portion and a lower portion. The lower portion of the first microlens is formed of a material different than a material of the upper portion of the first microlens.
摘要翻译：本发明公开了一种图像传感器，其包括形成在半导体衬底中的光电二极管，形成在光电二极管上的滤色器阵列，以及形成在滤色器阵列上的微透镜。可以是两个相邻微透镜中的任一个的第一微透镜包括上部和下部。第一微透镜的下部由与第一微透镜的上部的材料不同的材料形成。

8. 发明授权

US08163590B2 Image sensor and method for manufacturing the same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US08163590B2
公开(公告)日：2012-04-24
申请号：US12510532
申请日：2009-07-28
申请人： Young Je Yun
发明人： Young Je Yun
IPC分类号： H01L21/00
CPC分类号： H01L27/14627 , H01L27/14632 , H01L27/14647 , H01L27/14685 , H01L27/14687
摘要： Disclosed are an image sensor and a method of manufacturing the same. The image sensor includes a substrate including a pixel area and a logic circuit area; an interlayer dielectric layer on the substrate and having a trench in the pixel area; and an insulating layer microlens formed in the trench of the interlayer dielectric layer. According to the method, a substrate including a pixel area and a logic circuit area is prepared; an interlayer dielectric layer is formed on the substrate; a first microlens pattern is formed on the interlayer dielectric layer on the pixel area; and a second microlens pattern is formed by etching the interlayer dielectric layer on the pixel area using the first microlens pattern as an etch mask. During the etching, a second photoresist pattern, exposing the first microlens pattern, can be used to protect the interlayer dielectric layer on the logic circuit area.
摘要翻译：公开了一种图像传感器及其制造方法。图像传感器包括：基板，包括像素区域和逻辑电路区域; 在所述衬底上的层间绝缘层，并且在所述像素区域中具有沟槽; 以及形成在层间电介质层的沟槽中的绝缘层微透镜。根据该方法，准备包括像素区域和逻辑电路区域的基板; 在基板上形成层间电介质层; 在像素区域上的层间介质层上形成第一微透镜图案; 并且通过使用第一微透镜图案作为蚀刻掩模蚀刻像素区域上的层间电介质层来形成第二微透镜图案。在蚀刻期间，可以使用暴露第一微透镜图案的第二光致抗蚀剂图案来保护逻辑电路区域上的层间介电层。

9. 发明授权

US07977148B2 Method for manufacturing image sensor 失效
标题翻译：图像传感器制造方法
公开(公告)号：US07977148B2
公开(公告)日：2011-07-12
申请号：US12340221
申请日：2008-12-19
申请人： Young Je Yun
发明人： Young Je Yun
IPC分类号： H01L31/18
CPC分类号： H01L27/14632 , H01L27/14636 , H01L27/14687
摘要： A method for manufacturing an image sensor includes forming a photolithography key in a scribe lane of a first substrate over which circuitry is formed in an active region. A photodiode is formed on an active region of a second substrate. The second substrate is bonded to the first substrate such that the photodiode is electrically connected to the circuitry. The photolithography key in the scribe lane of the first substrate is opened. A pattern is formed on the active region of the bonded second substrate using the opened photolithography key on/over the first substrate.
摘要翻译：一种用于制造图像传感器的方法包括在第一基板的划线中形成光刻键，在其中在有源区中形成电路。在第二基板的有源区上形成光电二极管。第二衬底被结合到第一衬底，使得光电二极管电连接到电路。打开第一基板的划线中的光刻键。使用打开的光刻键在第一基板上或上方在接合的第二基板的有源区上形成图案。

10. 发明授权

US07608545B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07608545B2
公开(公告)日：2009-10-27
申请号：US11780970
申请日：2007-07-20
申请人： Young-Je Yun
发明人： Young-Je Yun
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , H01L21/0338
摘要： Embodiments relate to a semiconductor device and a method of manufacturing a semiconductor. In embodiments, the method may include a first exposure step of performing an exposure process for forming a first photoresist on a semiconductor substrate at one side of the outside of a trench pattern which will be formed, a first etching step of performing a predetermined dry etching method with respect to the first photoresist, a second exposure step of performing an exposure process for forming a second photoresist at the other side of the outside of the trench pattern, which is a side opposite to the first photoresist, and a second etching step of performing the predetermined dry etching method with respect to the second photoresist.
摘要翻译：实施例涉及半导体器件和制造半导体的方法。在实施例中，该方法可以包括：第一曝光步骤，用于在将要形成的沟槽图案的外侧的一侧上的半导体衬底上形成第一光致抗蚀剂，进行曝光处理;第一蚀刻步骤，执行预定的干蚀刻相对于第一光致抗蚀剂的方法;第二曝光步骤，其在与第一光致抗蚀剂相反的一侧的沟槽图案的外侧的另一侧进行用于形成第二光致抗蚀剂的曝光处理;以及第二蚀刻步骤，对第二光致抗蚀剂进行预定的干蚀刻方法。

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