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1. 发明授权

US07723147B2 Image sensor and method of manufacturing the same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US07723147B2
公开(公告)日：2010-05-25
申请号：US11950171
申请日：2007-12-04
申请人： Young-Je Yun , Jin-Ho Park , Sang-Wook Ryu
发明人： Young-Je Yun , Jin-Ho Park , Sang-Wook Ryu
IPC分类号： H01L21/00 , H01L31/0232
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14685
摘要： An image sensor and a method of manufacturing the same capable of improving image quality by preventing the generation of a lens bridge formed due to a mutual connection of neighboring microlenses. The image sensor can include a semiconductor substrate having a plurality of photodiodes formed thereon; an insulation layer formed over the semiconductor substrate; a color filter layer formed over the insulation layer; a planarization layer formed over the whole surface including the color filter layer and having a plularity of concave regions and a convex regions repeatedly arranged in a pixel period; and a microlens formed over each of the concave regions and the convex regions.
摘要翻译：一种图像传感器及其制造方法，其能够通过防止由于相邻微透镜的相互连接而形成的透镜桥的产生而提高图像质量。图像传感器可以包括其上形成有多个光电二极管的半导体衬底; 形成在半导体衬底上的绝缘层; 形成在绝缘层上的滤色器层; 在包括滤色器层的整个表面上形成的平坦化层，并且具有多个凹陷区域和在像素周期中重复排列的凸起区域; 以及形成在每个凹区域和凸区域上的微透镜。

2. 发明授权

US07829371B2 Image sensor and method for manufacturing the same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US07829371B2
公开(公告)日：2010-11-09
申请号：US12046091
申请日：2008-03-11
申请人： Sang-Wook Ryu
发明人： Sang-Wook Ryu
IPC分类号： H01L21/00
CPC分类号： H01L27/14632 , H01L27/14623 , H01L27/14627 , H01L27/14687
摘要： An image sensor including an interlayer dielectric layer formed over a semiconductor substrate, a color filter layer formed over the interlayer dielectric layer, a planarization layer formed over the color filter, and a microlens array having a gapless, continuous shape and a multilayered structure formed over the planarization layer.
摘要翻译：一种图像传感器，包括形成在半导体衬底上的层间电介质层，形成在层间电介质层上的滤色器层，形成在滤色器上的平坦化层，以及形成有无缝隙，连续形状和多层结构的微透镜阵列平坦化层。

3. 发明授权

US08173480B2 Image sensor and method for manufacturing the same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US08173480B2
公开(公告)日：2012-05-08
申请号：US12612716
申请日：2009-11-05
申请人： Ki-Jun Yun , Sang-Wook Ryu
发明人： Ki-Jun Yun , Sang-Wook Ryu
IPC分类号： H01L31/02
CPC分类号： H01L27/14636 , H01L21/76898 , H01L27/1464
摘要： An image sensor and a method of manufacturing an image sensor. A method of manufacturing an image sensor may include forming an interconnection and/or an interlayer dielectric over a semiconductor substrate including circuitry connected to an interconnection. A method of manufacturing an image sensor may include forming a photodiode having a first doping layer and/or a second doping layer over an interlayer dielectric, and forming a via hole through a photodiode, which may expose a portion of a surface of an interconnection. A method of manufacturing an image sensor may include forming a barrier pattern over a via hole which may cover an exposed surface of a second doping layer, and a contact plug on and/or over a via hole, which may connect an interconnection and a first doping layer. An upper portion of a contact plug may be etched. An insulating layer may be formed over a contact plug.
摘要翻译：图像传感器和图像传感器的制造方法。制造图像传感器的方法可以包括在包括连接到互连的电路的半导体衬底上形成互连和/或层间电介质。制造图像传感器的方法可以包括在层间电介质上形成具有第一掺杂层和/或第二掺杂层的光电二极管，以及通过光电二极管形成通孔，所述通孔可能暴露互连表面的一部分。制造图像传感器的方法可以包括在可以覆盖第二掺杂层的暴露表面的通孔上形成阻挡图案，以及在通孔上和/或上方的接触插塞，其可以将互连和第一掺杂层。可以蚀刻接触塞的上部。可以在接触插塞上形成绝缘层。

4. 发明申请

US20080283089A1 CLEANING APPARATUS OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件清洁装置
公开(公告)号：US20080283089A1
公开(公告)日：2008-11-20
申请号：US12120893
申请日：2008-05-15
申请人： Sang-Wook Ryu , Jim-Ho Park
发明人： Sang-Wook Ryu , Jim-Ho Park
IPC分类号： B08B3/08 , B08B3/02 , H01L21/00
CPC分类号： H01L21/02068 , H01L21/67051
摘要： A cleaning apparatus for a semiconductor device that can include a cleaning tank and a plurality of anodic metals attached to an inner surface thereof and serving as sacrificial anodes during a cleaning sequence using a cleaning liquid.
摘要翻译：一种用于半导体器件的清洁装置，其可以包括清洁槽和附接到其内表面的多个阳极金属，并且在使用清洁液体的清洁顺序期间用作牺牲阳极。

5. 发明申请

US20060145223A1 Image sensor capable of adjusting focusing length for individual color and fabrication method thereof 失效
标题翻译：能够调节各种颜色的聚焦长度的图像传感器及其制造方法
公开(公告)号：US20060145223A1
公开(公告)日：2006-07-06
申请号：US11322043
申请日：2005-12-28
申请人： Sang-Wook Ryu
发明人： Sang-Wook Ryu
IPC分类号： H01L31/062 , H01L21/00
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14627
摘要： An image sensor and a fabrication method thereof are provided. The image sensor includes: a first photodiode formed in a substrate and receiving a first color; a second photodiode formed in the substrate apart from the first photodiode and receiving a second color with a wavelength longer than that of the first color; a third photodiode formed in the substrate apart from the first photodiode and the second photodiode and receiving a third color with a wavelength longer than that of the second color; and a passivation layer formed on the substrate and having different regional thicknesses whose magnitude increases in order of a first region of the passivation layer corresponding to a first color region, a second region of the passivation layer corresponding to a second color region and a third region of the passivation layer corresponding to a third color region.
摘要翻译：提供了图像传感器及其制造方法。图像传感器包括：第一光电二极管，其形成在基板中并接收第一颜色; 形成在与第一光电二极管相隔的基板中的第二光电二极管，并接收波长比第一颜色的波长的第二颜色; 形成在与第一光电二极管和第二光电二极管之间的基板中的第三光电二极管，并且接收波长比第二颜色波长长的第三颜色; 以及钝化层，其形成在所述基板上并且具有不同的区域厚度，其大小按照与第一颜色区域相对应的钝化层的第一区域的顺序增加，钝化层的第二区域对应于第二颜色区域和第三区域对应于第三颜色区域的钝化层。

6. 发明授权

US07829370B2 Image sensor and fabricating method thereof 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US07829370B2
公开(公告)日：2010-11-09
申请号：US11933811
申请日：2007-11-01
申请人： Sang-Wook Ryu
发明人： Sang-Wook Ryu
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14627
摘要： An image sensor and fabricating method thereof which reduces a light intensity differential between a pixel center and a pixel edge and prevents crosstalk. The image sensor can include a plurality of convex lens provided within a passivation layer and in vertical alignment with a corresponding photodiode, each convex lens including a color filter; having a predetermined color array, and a plurality of microlens provided over the passivation layer and in vertical alignment with a corresponding color filer.
摘要翻译：一种图像传感器及其制造方法，其减少像素中心和像素边缘之间的光强差异并防止串扰。图像传感器可以包括设置在钝化层内并与对应的光电二极管垂直对准的多个凸透镜，每个凸透镜包括滤色器; 具有预定的颜色阵列，以及设置在钝化层上并与相应的彩色滤光片垂直对准的多个微透镜。

7. 发明授权

US07723177B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07723177B2
公开(公告)日：2010-05-25
申请号：US12142872
申请日：2008-06-20
申请人： Sang-Wook Ryu
发明人： Sang-Wook Ryu
IPC分类号： H01L21/8238
CPC分类号： H01L21/3065
摘要： A method of manufacturing a semiconductor device that may include steps of forming a pad oxide layer and an insulating layer on a semiconductor substrate; and then performing a first etching process on the semiconductor device to form an insulating layer pattern exposing a portion of the pad oxide layer in a trench area; and then performing a second etching process with respect to the pad oxide layer by using the insulating layer pattern as a mask; and then performing a blanket ion implantation process with respect to the insulating layer pattern and the exposed portion of the pad oxide layer to form an ion layer in the semiconductor substrate; and then performing a third etching process with respect to the semiconductor substrate to simultaneously form a pad oxide layer pattern and a trench in the semiconductor substrate; and then forming an insulating layer on the semiconductor substrate including the trench; and then performing a planarization process with respect to the semiconductor substrate including the insulating material and removing the pad oxide layer pattern and the insulating layer pattern, thereby forming an isolation layer in the trench.
摘要翻译：一种制造半导体器件的方法，其可以包括在半导体衬底上形成衬垫氧化物层和绝缘层的步骤; 然后对所述半导体器件执行第一蚀刻处理，以形成暴露所述衬垫氧化物层在沟槽区域中的一部分的绝缘层图案; 然后通过使用绝缘层图案作为掩模对相对于焊盘氧化物层进行第二蚀刻处理; 然后对所述绝缘层图案和所述焊盘氧化物层的所述暴露部分进行覆盖离子注入工艺以在所述半导体衬底中形成离子层; 然后对半导体衬底进行第三蚀刻处理，以在半导体衬底中同时形成焊盘氧化物层图案和沟槽; 然后在包括沟槽的半导体衬底上形成绝缘层; 然后对包括绝缘材料的半导体衬底进行平坦化处理，并且去除焊盘氧化物层图案和绝缘层图案，从而在沟槽中形成隔离层。

8. 发明申请

US20080224244A1 IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US20080224244A1
公开(公告)日：2008-09-18
申请号：US12046035
申请日：2008-03-11
申请人： Sang-Wook Ryu
发明人： Sang-Wook Ryu
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14627 , H01L27/14643 , H01L31/02327 , H01L31/035281 , Y02E10/50
摘要： An image sensor include an interlayer dielectric layer formed over a semiconductor substrate; a color filter array formed over the interlayer dielectric layer; a planarization layer formed over the color filter; and a microlens array having a continuous, gapless shape formed over the planarization layer and spatially corresponding to the color filter array. The microlens array is composed of a first dielectric layer and a second dielectric layer formed over the first dielectric layer.
摘要翻译：图像传感器包括形成在半导体衬底上的层间电介质层; 形成在所述层间电介质层上的滤色器阵列; 形成在滤色器上的平坦化层; 以及在平坦化层上形成并且在空间上对应于滤色器阵列的具有连续的无间隙形状的微透镜阵列。微透镜阵列由形成在第一介电层上的第一电介质层和第二电介质层组成。

9. 发明授权

US07312093B2 Image sensor capable of adjusting focusing length for individual color and fabrication method thereof 失效
标题翻译：能够调节各种颜色的聚焦长度的图像传感器及其制造方法
公开(公告)号：US07312093B2
公开(公告)日：2007-12-25
申请号：US11322043
申请日：2005-12-28
申请人： Sang-Wook Ryu
发明人： Sang-Wook Ryu
IPC分类号： H01L21/00 , H01L31/00
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14627
摘要： An image sensor and a fabrication method thereof are provided. The image sensor includes: a first photodiode formed in a substrate and receiving a first color; a second photodiode formed in the substrate apart from the first photodiode and receiving a second color with a wavelength longer than that of the first color; a third photodiode formed in the substrate apart from the first photodiode and the second photodiode and receiving a third color with a wavelength longer than that of the second color; and a passivation layer formed on the substrate and having different regional thicknesses whose magnitude increases in order of a first region of the passivation layer corresponding to a first color region, a second region of the passivation layer corresponding to a second color region and a third region of the passivation layer corresponding to a third color region.
摘要翻译：提供了图像传感器及其制造方法。图像传感器包括：第一光电二极管，其形成在基板中并接收第一颜色; 形成在与第一光电二极管相隔的基板中的第二光电二极管，并接收波长比第一颜色的波长的第二颜色; 形成在与第一光电二极管和第二光电二极管之间的基板中的第三光电二极管，并且接收波长比第二颜色波长长的第三颜色; 以及钝化层，其形成在所述基板上并且具有不同的区域厚度，其大小按照与第一颜色区域相对应的钝化层的第一区域的顺序增加，钝化层的第二区域对应于第二颜色区域和第三区域对应于第三颜色区域的钝化层。

10. 发明授权

US08222068B2 Method for manufacturing image sensor 有权
标题翻译：图像传感器制造方法
公开(公告)号：US08222068B2
公开(公告)日：2012-07-17
申请号：US12113965
申请日：2008-05-02
申请人： Sang-Wook Ryu , Byoung-Saek Tak
发明人： Sang-Wook Ryu , Byoung-Saek Tak
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L27/14627 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing an image sensor including forming a microlens array over a color filter array, forming a capping layer over the semiconductor substrate including the microlens array, forming a pad mask over the capping layer, and then exposing a pad in an interlayer dielectric layer.
摘要翻译：一种用于制造图像传感器的方法，包括在滤色器阵列上形成微透镜阵列，在包括微透镜阵列的半导体衬底上形成覆盖层，在覆盖层上形成焊盘掩模，然后在层间介质层中曝光焊盘。

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