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    • 1. 发明授权
    • Image sensor and method of manufacturing the same
    • 图像传感器及其制造方法
    • US07723147B2
    • 2010-05-25
    • US11950171
    • 2007-12-04
    • Young-Je YunJin-Ho ParkSang-Wook Ryu
    • Young-Je YunJin-Ho ParkSang-Wook Ryu
    • H01L21/00H01L31/0232
    • H01L27/14627H01L27/14621H01L27/14685
    • An image sensor and a method of manufacturing the same capable of improving image quality by preventing the generation of a lens bridge formed due to a mutual connection of neighboring microlenses. The image sensor can include a semiconductor substrate having a plurality of photodiodes formed thereon; an insulation layer formed over the semiconductor substrate; a color filter layer formed over the insulation layer; a planarization layer formed over the whole surface including the color filter layer and having a plularity of concave regions and a convex regions repeatedly arranged in a pixel period; and a microlens formed over each of the concave regions and the convex regions.
    • 一种图像传感器及其制造方法,其能够通过防止由于相邻微透镜的相互连接而形成的透镜桥的产生而提高图像质量。 图像传感器可以包括其上形成有多个光电二极管的半导体衬底; 形成在半导体衬底上的绝缘层; 形成在绝缘层上的滤色器层; 在包括滤色器层的整个表面上形成的平坦化层,并且具有多个凹陷区域和在像素周期中重复排列的凸起区域; 以及形成在每个凹区域和凸区域上的微透镜。
    • 3. 发明授权
    • Image sensor and method for manufacturing the same
    • 图像传感器及其制造方法
    • US08173480B2
    • 2012-05-08
    • US12612716
    • 2009-11-05
    • Ki-Jun YunSang-Wook Ryu
    • Ki-Jun YunSang-Wook Ryu
    • H01L31/02
    • H01L27/14636H01L21/76898H01L27/1464
    • An image sensor and a method of manufacturing an image sensor. A method of manufacturing an image sensor may include forming an interconnection and/or an interlayer dielectric over a semiconductor substrate including circuitry connected to an interconnection. A method of manufacturing an image sensor may include forming a photodiode having a first doping layer and/or a second doping layer over an interlayer dielectric, and forming a via hole through a photodiode, which may expose a portion of a surface of an interconnection. A method of manufacturing an image sensor may include forming a barrier pattern over a via hole which may cover an exposed surface of a second doping layer, and a contact plug on and/or over a via hole, which may connect an interconnection and a first doping layer. An upper portion of a contact plug may be etched. An insulating layer may be formed over a contact plug.
    • 图像传感器和图像传感器的制造方法。 制造图像传感器的方法可以包括在包括连接到互连的电路的半导体衬底上形成互连和/或层间电介质。 制造图像传感器的方法可以包括在层间电介质上形成具有第一掺杂层和/或第二掺杂层的光电二极管,以及通过光电二极管形成通孔,所述通孔可能暴露互连表面的一部分。 制造图像传感器的方法可以包括在可以覆盖第二掺杂层的暴露表面的通孔上形成阻挡图案,以及在通孔上和/或上方的接触插塞,其可以将互连和第一 掺杂层。 可以蚀刻接触塞的上部。 可以在接触插塞上形成绝缘层。
    • 5. 发明申请
    • Image sensor capable of adjusting focusing length for individual color and fabrication method thereof
    • 能够调节各种颜色的聚焦长度的图像传感器及其制造方法
    • US20060145223A1
    • 2006-07-06
    • US11322043
    • 2005-12-28
    • Sang-Wook Ryu
    • Sang-Wook Ryu
    • H01L31/062H01L21/00
    • H01L27/14685H01L27/14621H01L27/14627
    • An image sensor and a fabrication method thereof are provided. The image sensor includes: a first photodiode formed in a substrate and receiving a first color; a second photodiode formed in the substrate apart from the first photodiode and receiving a second color with a wavelength longer than that of the first color; a third photodiode formed in the substrate apart from the first photodiode and the second photodiode and receiving a third color with a wavelength longer than that of the second color; and a passivation layer formed on the substrate and having different regional thicknesses whose magnitude increases in order of a first region of the passivation layer corresponding to a first color region, a second region of the passivation layer corresponding to a second color region and a third region of the passivation layer corresponding to a third color region.
    • 提供了图像传感器及其制造方法。 图像传感器包括:第一光电二极管,其形成在基板中并接收第一颜色; 形成在与第一光电二极管相隔的基板中的第二光电二极管,并接收波长比第一颜色的波长的第二颜色; 形成在与第一光电二极管和第二光电二极管之间的基板中的第三光电二极管,并且接收波长比第二颜色波长长的第三颜色; 以及钝化层,其形成在所述基板上并且具有不同的区域厚度,其大小按照与第一颜色区域相对应的钝化层的第一区域的顺序增加,钝化层的第二区域对应于第二颜色区域和第三区域 对应于第三颜色区域的钝化层。
    • 7. 发明授权
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • US07723177B2
    • 2010-05-25
    • US12142872
    • 2008-06-20
    • Sang-Wook Ryu
    • Sang-Wook Ryu
    • H01L21/8238
    • H01L21/3065
    • A method of manufacturing a semiconductor device that may include steps of forming a pad oxide layer and an insulating layer on a semiconductor substrate; and then performing a first etching process on the semiconductor device to form an insulating layer pattern exposing a portion of the pad oxide layer in a trench area; and then performing a second etching process with respect to the pad oxide layer by using the insulating layer pattern as a mask; and then performing a blanket ion implantation process with respect to the insulating layer pattern and the exposed portion of the pad oxide layer to form an ion layer in the semiconductor substrate; and then performing a third etching process with respect to the semiconductor substrate to simultaneously form a pad oxide layer pattern and a trench in the semiconductor substrate; and then forming an insulating layer on the semiconductor substrate including the trench; and then performing a planarization process with respect to the semiconductor substrate including the insulating material and removing the pad oxide layer pattern and the insulating layer pattern, thereby forming an isolation layer in the trench.
    • 一种制造半导体器件的方法,其可以包括在半导体衬底上形成衬垫氧化物层和绝缘层的步骤; 然后对所述半导体器件执行第一蚀刻处理,以形成暴露所述衬垫氧化物层在沟槽区域中的一部分的绝缘层图案; 然后通过使用绝缘层图案作为掩模对相对于焊盘氧化物层进行第二蚀刻处理; 然后对所述绝缘层图案和所述焊盘氧化物层的所述暴露部分进行覆盖离子注入工艺以在所述半导体衬底中形成离子层; 然后对半导体衬底进行第三蚀刻处理,以在半导体衬底中同时形成焊盘氧化物层图案和沟槽; 然后在包括沟槽的半导体衬底上形成绝缘层; 然后对包括绝缘材料的半导体衬底进行平坦化处理,并且去除焊盘氧化物层图案和绝缘层图案,从而在沟槽中形成隔离层。
    • 9. 发明授权
    • Image sensor capable of adjusting focusing length for individual color and fabrication method thereof
    • 能够调节各种颜色的聚焦长度的图像传感器及其制造方法
    • US07312093B2
    • 2007-12-25
    • US11322043
    • 2005-12-28
    • Sang-Wook Ryu
    • Sang-Wook Ryu
    • H01L21/00H01L31/00
    • H01L27/14685H01L27/14621H01L27/14627
    • An image sensor and a fabrication method thereof are provided. The image sensor includes: a first photodiode formed in a substrate and receiving a first color; a second photodiode formed in the substrate apart from the first photodiode and receiving a second color with a wavelength longer than that of the first color; a third photodiode formed in the substrate apart from the first photodiode and the second photodiode and receiving a third color with a wavelength longer than that of the second color; and a passivation layer formed on the substrate and having different regional thicknesses whose magnitude increases in order of a first region of the passivation layer corresponding to a first color region, a second region of the passivation layer corresponding to a second color region and a third region of the passivation layer corresponding to a third color region.
    • 提供了图像传感器及其制造方法。 图像传感器包括:第一光电二极管,其形成在基板中并接收第一颜色; 形成在与第一光电二极管相隔的基板中的第二光电二极管,并接收波长比第一颜色的波长的第二颜色; 形成在与第一光电二极管和第二光电二极管之间的基板中的第三光电二极管,并且接收波长比第二颜色波长长的第三颜色; 以及钝化层,其形成在所述基板上并且具有不同的区域厚度,其大小按照与第一颜色区域相对应的钝化层的第一区域的顺序增加,钝化层的第二区域对应于第二颜色区域和第三区域 对应于第三颜色区域的钝化层。