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1. 发明授权

US10003049B2 Secondary battery of improved safety 有权
公开(公告)号：US10003049B2
公开(公告)日：2018-06-19
申请号：US13812225
申请日：2011-08-02
申请人： Sungjin Kwon , Soonho Ahn , Hyun Chul Jung , Ki Woong Kim , Young Hun Kim
发明人： Sungjin Kwon , Soonho Ahn , Hyun Chul Jung , Ki Woong Kim , Young Hun Kim
IPC分类号： H01M2/08 , H01M2/02 , H01M2/22 , H01M2/26 , H01M10/04 , H01M10/0525
CPC分类号： H01M2/0202 , H01M2/021 , H01M2/08 , H01M2/22 , H01M2/26 , H01M10/0436 , H01M10/0525
摘要： Disclosed herein is a secondary battery having an electrode assembly mounted in a receiving part of a pouch-shaped battery case, wherein convex parts formed to protrude from the battery case upward are provided at the upper end of the receiving part of the battery case corresponding to electrode tabs of the electrode assembly so as to support coupling portions (V-form regions) between the electrode tabs and corresponding electrode leads against injection pressure of a holt melt resin during injection molding to form a pack case with respect to the secondary battery.

2. 发明授权

US08713596B2 Method and system for blocking hazardous information 有权
标题翻译：阻止危险信息的方法和系统
公开(公告)号：US08713596B2
公开(公告)日：2014-04-29
申请号：US11948590
申请日：2007-11-30
申请人： Sun Woo Park , Young Hun Kim , In-Won Kang , Taeyong Park , Sungtack Byun
发明人： Sun Woo Park , Young Hun Kim , In-Won Kang , Taeyong Park , Sungtack Byun
IPC分类号： H04N7/16
CPC分类号： H04L51/12 , G06Q10/107
摘要： A method for blocking objectionable information on a terminal. The method includes receiving header information corresponding to a particular multimedia content, extracting grade information from the header, determining if the extracted grade information is an allowable grade indicating that the particular multimedia content can be received by the terminal, receiving the particular multimedia content if the determining step determines the extracted grade information is the allowable grade, comparing the received multimedia content with objectionable information determination data stored in the terminal to determine if the multimedia content is objectionable, and assigning an objectionable grade to the header of the multimedia content when the comparing step determines the received multimedia content is objectionable.
摘要翻译：一种在终端上屏蔽令人反感的信息的方法。该方法包括接收对应于特定多媒体内容的标题信息，从标题中提取成绩信息，确定所提取的成绩信息是否是表示特定多媒体内容可被终端接收的允许等级，如果确定步骤确定所提取的等级信息是允许等级，将接收的多媒体内容与存储在终端中的不良信息确定数据进行比较，以确定多媒体内容是否令人不快，并且当比较时将多个内容的头部分配给令人讨厌的等级步骤确定收到的多媒体内容是令人反感的。

3. 发明申请

US20110155430A1 ANISOTROPIC CONDUCTIVE ADHESIVE COMPOSITE AND FILM, AND CIRCUIT CONNECTING STRUCTURE INCLUDING THE SAME 有权
标题翻译：各向异性导电粘合复合材料和薄膜，以及包括其中的电路连接结构
公开(公告)号：US20110155430A1
公开(公告)日：2011-06-30
申请号：US12974476
申请日：2010-12-21
申请人： Gyu Ho LEE , Young Woo Park , Il Rae Cho , Young Hun Kim , Kyoung Soo Park , Jin Seong Park , Dong Seon Uh , Kyung Jin Lee , Kwang Jin Jung
发明人： Gyu Ho LEE , Young Woo Park , Il Rae Cho , Young Hun Kim , Kyoung Soo Park , Jin Seong Park , Dong Seon Uh , Kyung Jin Lee , Kwang Jin Jung
IPC分类号： H05K1/09 , H01B1/22
CPC分类号： C09J11/04 , C08K3/017 , C08K9/02 , C09J9/02 , H05K3/323 , H05K2201/0218
摘要： An anisotropic conductive adhesive composite and film includes a binder and conductive particles dispersed in the binder. The conductive particles include a copper core particle and a metal coating layer coated on a surface of the corresponding copper core particle.
摘要翻译：各向异性导电粘合剂复合材料和膜包括粘合剂和分散在粘合剂中的导电颗粒。导电颗粒包括铜芯颗粒和涂覆在相应的铜芯颗粒的表面上的金属涂层。

4. 发明申请

US20100080663A1 APPARATUS FOR PROCESSING EYEGLASS LENS 有权
标题翻译：加工眼镜镜的设备
公开(公告)号：US20100080663A1
公开(公告)日：2010-04-01
申请号：US12495692
申请日：2009-06-30
申请人： Young-Hun Kim
发明人： Young-Hun Kim
IPC分类号： B23B39/06 , B23B41/14 , B23B47/00
CPC分类号： B23B41/00 , B23B2215/40 , B24B9/146 , B28D1/143
摘要： An apparatus for processing an eyeglass lens which is capable of forming a hole or various shapes on an eyeglass lens is disclosed. The apparatus includes a pair of lens fixing shafts for clamping a lens; a carriage which supports and moves the lens fixing shafts; a lens rotation motor for rotating the lens fixing shafts; and a drilling part for forming a hole on the lens, wherein the drilling part includes: a drill head having a drill to which a drill bit is fixed; a drill head mover which is connected with the drill head and moves the drill head straightly; and a fixing block which supports and fixes the drill head mover on the apparatus for processing an eyeglass lens.
摘要翻译：公开了一种能够在眼镜镜片上形成孔或各种形状的眼镜镜片的处理装置。该装置包括用于夹持透镜的一对透镜固定轴; 支撑并移动透镜固定轴的托架; 用于旋转透镜固定轴的透镜旋转电机; 以及用于在所述透镜上形成孔的钻孔部分，其中所述钻孔部分包括：具有钻头的钻头，钻头固定到钻头上; 钻头移动器，其与钻头连接并直立地移动钻头; 以及将钻头动子支撑并固定在用于处理眼镜镜片的装置上的固定块。

5. 发明授权

US07236662B2 Mode converter device using omnidirectional reflectors 有权
标题翻译：模式转换器使用全向反射器
公开(公告)号：US07236662B2
公开(公告)日：2007-06-26
申请号：US11012311
申请日：2004-12-16
申请人： Young-hun Kim , Hong-seok Lee , Seong-mo Hwang , Seung-ho Nam , Young-chan Kim
发明人： Young-hun Kim , Hong-seok Lee , Seong-mo Hwang , Seung-ho Nam , Young-chan Kim
IPC分类号： G02B6/42
CPC分类号： B82Y20/00 , G02B6/1225 , G02B6/1228 , G02B6/14
摘要： Provided is a mode converter for use in optical communication. The mode converter includes a first waveguide, a second waveguide optically coupled into the first waveguide, and omnidirectional reflectors that are disposed on either side of the first waveguide and have forward reflectivity with respect to a mode propagating in the first waveguide. The mode converter provides minimum loss coupling between either optical fiber or low index difference waveguide and a high index contrast waveguide. Furthermore, the mode converter achieves high, bi-directional optical coupling over a wide wavelength range with a simple manufacturing process.
摘要翻译：提供了一种用于光通信的模式转换器。模式转换器包括第一波导，光耦合到第一波导中的第二波导和设置在第一波导的任一侧的相对于在第一波导中传播的模式具有正向反射率的全向反射器。模式转换器提供光纤或低折射率差分波导与高折射率对比度波导之间的最小损耗耦合。此外，模式转换器通过简单的制造工艺在宽波长范围内实现高双向光耦合。

6. 发明授权

US07233718B2 Optical device and method of manufacturing the same 有权
标题翻译：光学装置及其制造方法
公开(公告)号：US07233718B2
公开(公告)日：2007-06-19
申请号：US11012728
申请日：2004-12-16
申请人： Seong-mo Hwang , Young-hun Kim , Seung-ho Nam , Young-chan Kim
发明人： Seong-mo Hwang , Young-hun Kim , Seung-ho Nam , Young-chan Kim
IPC分类号： G02B6/28
CPC分类号： H01L31/065 , G02B6/12004 , G02B6/136 , G02B6/42 , H01L31/028 , H01L31/105 , Y02E10/547
摘要： An optical device integrally including an optical waveguide and an optical detector, and a method of manufacturing the same. The optical device includes: a substrate; a first single crystalline growth layer grown on the substrate; an optical waveguide provided with a clad layer and a core layer formed on the first single crystalline growth layer; a second single crystalline growth layer grown on a predetermined portion of a core layer at which the clad layer is removed, for absorbing light having a wavelength within a predetermined band and traveling in the optical waveguide.
摘要翻译：一种包括光波导和光学检测器的光学器件及其制造方法。光学装置包括：基板; 在衬底上生长的第一单晶生长层; 光波导，其设置有形成在所述第一单晶生长层上的覆盖层和芯层; 生长在芯层的预定部分上的第二单晶生长层，其中去除了包层，用于吸收波长在预定带内并在光波导中行进的光。

7. 发明申请

US20060144823A1 Etching solution for D-defect evaluation in silicon wafer and evaluation method using the same 审中-公开
标题翻译：用于硅晶圆缺陷评估的蚀刻方法及其评估方法
公开(公告)号：US20060144823A1
公开(公告)日：2006-07-06
申请号：US11323907
申请日：2005-12-29
申请人： Young-Hun Kim , Sung-Wook Lee , Young-Chang Park
发明人： Young-Hun Kim , Sung-Wook Lee , Young-Chang Park
IPC分类号： C23F1/00 , C03C15/00 , B44C1/22 , H01L21/66
CPC分类号： C09K13/08 , G01N1/32 , H01L22/12
摘要： The present invention relates to an etching solution for evaluating crystal defects of silicon wafers, and more particularly to an etching solution comprising KMnO4 and HF. The etching solution for crystal defect evaluation of a silicon wafer in accordance with the present invention can accurately and quickly evaluate the crystal defects in silicon wafers having specific resistance values of 0.01 Ω·cm or smaller, which previously could only be evaluated by physical methods. Also, the etching solution of the present invention can quickly evaluate a D-defects in silicon wafers having specific resistance values exceeding 0.01 Ω·cm.
摘要翻译：本发明涉及一种用于评估硅晶片的晶体缺陷的蚀刻溶液，更具体地涉及包含KMnO 4和HF的蚀刻溶液。根据本发明的硅晶片的晶体缺陷评估蚀刻溶液可以准确且快速地评估具有0.01Ω·cm或更小的电阻值的硅晶片中的晶体缺陷，其以前只能通过物理方法进行评估。此外，本发明的蚀刻溶液可以快速评估具有超过0.01Ω·cm的电阻值的硅晶片中的D缺陷。

8. 发明申请

US20130330606A1 SECONDARY BATTERY OF IMPROVED SAFETY 有权
标题翻译：改进安全的二次电池
公开(公告)号：US20130330606A1
公开(公告)日：2013-12-12
申请号：US13812225
申请日：2011-08-02
申请人： Sungjin Kwon , Soonho Ahn , Hyun Chul Jung , Ki Woong Kim , Young Hun Kim
发明人： Sungjin Kwon , Soonho Ahn , Hyun Chul Jung , Ki Woong Kim , Young Hun Kim
IPC分类号： H01M2/02 , H01M10/0525
CPC分类号： H01M2/0202 , H01M2/021 , H01M2/08 , H01M2/22 , H01M2/26 , H01M10/0436 , H01M10/0525
摘要： Disclosed herein is a secondary battery having an electrode assembly mounted in a receiving part of a pouch-shaped battery case, wherein convex parts formed to protrude from the battery case upward are provided at the upper end of the receiving part of the battery case corresponding to electrode tabs of the electrode assembly so as to support coupling portions (V-form regions) between the electrode tabs and corresponding electrode leads against injection pressure of a holt melt resin during injection molding to form a pack case with respect to the secondary battery.
摘要翻译：这里公开了一种二次电池，其具有安装在袋状电池壳体的容纳部分中的电极组件，其中形成为从电池壳体向上突出的凸部设置在电池壳体的接收部分的上端，电极组件的电极片，以便在注射模制期间支撑电极片和相应的电极引线之间的耦合部分（V形区域），以抵抗注射成型时的电荷熔融树脂的注射压力，从而形成相对于二次电池的包装盒。

9. 发明申请

US20130134081A1 HYBRID POROUS STRUCTURE, METHOD OF PREPARING HYBRID POROUS STRUCTURE, SEPARATION MEMBRANE INCLUDING HYBRID POROUS STRUCTURE, AND WATER TREATMENT DEVICE INCLUDING MEMBRANE 有权
标题翻译：混合多孔结构，制备混合多孔结构的方法，包括混合多孔结构的分离膜，以及包括膜的水处理装置
公开(公告)号：US20130134081A1
公开(公告)日：2013-05-30
申请号：US13469661
申请日：2012-05-11
申请人： Hyo Kang , Pil Jin Yoo , Sung Soo Han , Young Hun Kim , Seon Ju Yeo
发明人： Hyo Kang , Pil Jin Yoo , Sung Soo Han , Young Hun Kim , Seon Ju Yeo
IPC分类号： B01D71/06 , B05D3/10 , B32B5/18
CPC分类号： B32B5/18 , B01D61/002 , B01D67/003 , B01D69/10 , B01D69/105 , B01D2323/24 , B01D2323/26 , B01D2325/02 , B01D2325/14 , B01D2325/16 , Y10T428/249955 , Y10T428/249956 , Y10T428/249958
摘要： A hybrid porous structure may include a base template and an ionic polymer coating layer within the base template. The structural framework of the base template itself is non-porous. The base template fills the gaps among a plurality of imaginary spherical bodies stacked in three-dimensions as an imaginary stack. The ionic polymer coating layer is laminated on an inner surface of the base template inside the imaginary spherical bodies. The imaginary spherical bodies may have a pore in the center which is not occupied by the ionic polymer coating layer. The hybrid porous structure may include a plurality of necks, which are openings formed in a contact part where adjacent imaginary spherical bodies contact each other. The necks may be interconnected to the pores located in the center part of the imaginary spherical bodies.
摘要翻译：混合多孔结构可以包括基底模板和基底模板内的离子聚合物涂层。基本模板本身的结构框架是无孔的。基本模板填充以三维堆叠的多个假想球体之间的间隙作为假想堆叠。离子聚合物涂层层叠在假想球体内的基底模板的内表面上。假想的球体可以在中心具有未被离子聚合物涂层占据的孔。混合多孔结构可以包括多个颈部，这些颈部是形成在相邻的假想球体彼此接触的接触部分中的开口。颈部可以与位于假想球体的中心部分的孔相互连接。

10. 发明申请

US20120141808A1 2-DIMENSIONAL LINE-DEFECTS CONTROLLED SILICON INGOT, WAFER AND EPITAXIAL WAFER, AND MANUFACTURING PROCESS AND APPARATUS THEREFOR 审中-公开
标题翻译：二维线缺陷控制硅芯，波形和外延波形及其制造工艺及其设备
公开(公告)号：US20120141808A1
公开(公告)日：2012-06-07
申请号：US13328158
申请日：2011-12-16
申请人： Do-Won Song , Young-Hun Kim , Eun-Sang Ji , Young-Kyu Choi , Hwa-Jin Jo
发明人： Do-Won Song , Young-Hun Kim , Eun-Sang Ji , Young-Kyu Choi , Hwa-Jin Jo
IPC分类号： C01B33/02 , B32B9/04 , B28D5/00 , C30B15/22
CPC分类号： C30B15/305 , C30B29/06 , C30B30/04 , C30B35/00 , Y10T117/10 , Y10T117/1024 , Y10T117/1068
摘要： The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.
摘要翻译：本发明报道了未报道的缺陷，并公开了缺陷控制硅锭，缺陷控制晶片及其制造方法和装置。新的缺陷是当由施加强水平磁场的HMCZ（Horizontal Magnetic Czochralski）方法引起的螺旋位错产生于慢跑螺钉位错时产生的晶体缺陷，并且在冷却晶体的热处理期间传播以形成交叉滑移。本发明改变了布置在硅熔体上方的加热器和锭之间的上部隔热结构的形状和结构，并且控制了硅单晶锭生长过程的初始条件或操作条件以减少由强的水平磁场，防止螺丝错位传播到十字滑移。

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