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1. 发明授权

US09871055B1 Vertical-type memory device 有权
公开(公告)号：US09871055B1
公开(公告)日：2018-01-16
申请号：US15462933
申请日：2017-03-20
申请人： Phil-ouk Nam , Sung-gil Kim , Ji-hoon Choi , Seul-ye Kim , Jae-young Ahn , Hong-suk Kim
发明人： Phil-ouk Nam , Sung-gil Kim , Ji-hoon Choi , Seul-ye Kim , Jae-young Ahn , Hong-suk Kim
IPC分类号： H01L27/115 , H01L27/11582 , H01L27/11556 , H01L29/78 , H01L27/1157
CPC分类号： H01L27/11582 , H01L27/11556 , H01L27/1157 , H01L29/7827
摘要： A vertical-type memory device may include a channel layer vertically extending on a substrate, a ground selection transistor at a side of the channel layer on the substrate, the ground selection transistor including a first gate insulation portion and a first replacement gate electrode, an etch control layer on the first replacement gate electrode, and a memory cell on the etch control layer, the memory cell including a second gate insulation portion and a second replacement gate electrode. The etch control layer may include a polysilicon layer doped with carbon, N-type impurities, or P-type impurities, or may include a polysilicon oxide layer comprising carbon, N-type impurities, or P-type impurities. A thickness of the first replacement gate electrode may be the same as a thickness of the second replacement gate electrode, or the first replacement gate electrode may be thicker than the second.

2. 发明授权

US08460999B2 Non-volatile memory devices with multiple layers having band gap relationships among the layers 有权
标题翻译：具有层之间具有带隙关系的多层的非易失性存储器件
公开(公告)号：US08460999B2
公开(公告)日：2013-06-11
申请号：US13067405
申请日：2011-05-31
申请人： Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
发明人： Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
IPC分类号： H01L21/336
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/42348 , H01L29/513 , H01L29/66833
摘要： A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer.
摘要翻译：非易失性存储器件可以包括：半导体衬底上的隧道绝缘层; 隧道绝缘层上的电荷存储层; 电荷存储层上的阻挡绝缘层; 以及在所述阻挡绝缘层上的控制栅电极。隧道绝缘层可以包括第一隧道绝缘层和第二隧道绝缘层。第一隧道绝缘层和第二隧道绝缘层可以顺序堆叠在半导体衬底上。第二隧道绝缘层可以具有比第一隧道绝缘层更大的带隙。非易失性存储器件的制造方法可以包括：在半导体衬底上形成隧道绝缘层; 在隧道绝缘层上形成电荷存储层; 在电荷存储层上形成阻挡绝缘层; 以及在所述阻挡绝缘层上形成控制栅电极。

3. 发明授权

US08435877B2 Methods of manufacturing semiconductor devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08435877B2
公开(公告)日：2013-05-07
申请号：US13227799
申请日：2011-09-08
申请人： Jun-Kyu Yang , Hong-Suk Kim , Ju-Yul Lee , Ki-Hyun Hwang , Jae-Young Ahn
发明人： Jun-Kyu Yang , Hong-Suk Kim , Ju-Yul Lee , Ki-Hyun Hwang , Jae-Young Ahn
IPC分类号： H01L21/28
CPC分类号： H01L21/28247 , H01L21/28273 , H01L21/764 , H01L27/11568
摘要： A semiconductor device includes gate structures including a tunnel insulating layer pattern, a floating gate, a dielectric layer pattern and a control gate sequentially disposed on a substrate. The control gate includes an impurity doped polysilicon layer pattern and a metal layer pattern. The gate structures are spaced apart from each other on the substrate. A capping layer pattern is disposed on a sidewall portion of the metal layer pattern and includes a metal oxide. An insulating layer covers the gate structures and the capping layer pattern. The insulating layer is formed on the substrate and includes an air-gap therein.
摘要翻译：半导体器件包括栅极结构，其包括顺序地设置在衬底上的隧道绝缘层图案，浮动栅极，电介质层图案和控制栅极。控制栅极包括杂质掺杂多晶硅层图案和金属层图案。栅极结构在衬底上彼此间隔开。覆盖层图案设置在金属层图案的侧壁部分上并且包括金属氧化物。绝缘层覆盖栅极结构和覆盖层图案。绝缘层形成在基板上并且在其中包括气隙。

4. 发明授权

US08173729B2 Photosensitive resin composition 有权
标题翻译：感光树脂组合物
公开(公告)号：US08173729B2
公开(公告)日：2012-05-08
申请号：US12714837
申请日：2010-03-01
申请人： Hyoc-min Youn , Byung-uk Kim , Ki-hyuk Koo , Tae-hoon Yeo , Joo-pyo Yun , Hong-dae Shin , Sang Hoon Lee , Dong-myung Kim , Su-youn Choi , Jin Sun Kim , Chang-Min Woo , Hong-Suk Kim
发明人： Hyoc-min Youn , Byung-uk Kim , Ki-hyuk Koo , Tae-hoon Yeo , Joo-pyo Yun , Hong-dae Shin , Sang Hoon Lee , Dong-myung Kim , Su-youn Choi , Jin Sun Kim , Chang-Min Woo , Hong-Suk Kim
IPC分类号： C08K5/3447 , C08K5/3492 , C08K5/3435
CPC分类号： G03F7/031 , G02F1/133345
摘要： The present invention relates to a photosensitive resin composition, particularly to a photosensitive resin composition for forming an interlayer organic insulating film for TFT-LCD, comprising 0.01 to 20 wt % of UV stabilizer or radical scavenger. The photosensitive resin composition of the present invention can be used for forming an interlayer organic insulating film for TFT-LCD to improve active unfilled area upon over exposure in liquid crystal photo-alignment process, can easily control resolution of pattern, and is particularly suitable for forming a planarization layer of an interlayer organic insulating film.
摘要翻译：本发明涉及一种感光性树脂组合物，特别涉及用于形成TFT-LCD用层间有机绝缘膜的感光性树脂组合物，其含有0.01〜20重量％的UV稳定剂或自由基清除剂。本发明的感光性树脂组合物可用于形成用于TFT-LCD的层间有机绝缘膜，以在液晶光取向过程中过度曝光时改善活性未填充区域，可以容易地控制图案的分辨率，并且特别适用于形成层间有机绝缘膜的平坦化层。

5. 发明申请

US20120064707A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120064707A1
公开(公告)日：2012-03-15
申请号：US13227799
申请日：2011-09-08
申请人： Jun-Kyu YANG , Hong-Suk Kim , Ju-Yul Lee , Ki-Hyun Hwang , Jae-Young Ahn
发明人： Jun-Kyu YANG , Hong-Suk Kim , Ju-Yul Lee , Ki-Hyun Hwang , Jae-Young Ahn
IPC分类号： H01L21/28
CPC分类号： H01L21/28247 , H01L21/28273 , H01L21/764 , H01L27/11568
摘要： A semiconductor device includes gate structures including a tunnel insulating layer pattern, a floating gate, a dielectric layer pattern and a control gate sequentially disposed on a substrate. The control gate includes an impurity doped polysilicon layer pattern and a metal layer pattern. The gate structures are spaced apart from each other on the substrate. A capping layer pattern is disposed on a sidewall portion of the metal layer pattern and includes a metal oxide. An insulating layer covers the gate structures and the capping layer pattern. The insulating layer is formed on the substrate and includes an air-gap therein.
摘要翻译：半导体器件包括栅极结构，其包括顺序地设置在衬底上的隧道绝缘层图案，浮动栅极，电介质层图案和控制栅极。控制栅极包括杂质掺杂多晶硅层图案和金属层图案。栅极结构在衬底上彼此间隔开。覆盖层图案设置在金属层图案的侧壁部分上并且包括金属氧化物。绝缘层覆盖栅极结构和覆盖层图案。绝缘层形成在基板上并且在其中包括气隙。

6. 发明授权

US07973355B2 Nonvolatile memory devices with multiple layers having band gap relationships among the layers 有权
标题翻译：具有层之间具有带隙关系的多层的非易失性存储器件
公开(公告)号：US07973355B2
公开(公告)日：2011-07-05
申请号：US12216945
申请日：2008-07-14
申请人： Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
发明人： Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/42348 , H01L29/513 , H01L29/66833
摘要： A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer.
摘要翻译：非易失性存储器件可以包括：半导体衬底上的隧道绝缘层; 隧道绝缘层上的电荷存储层; 电荷存储层上的阻挡绝缘层; 以及在所述阻挡绝缘层上的控制栅电极。隧道绝缘层可以包括第一隧道绝缘层和第二隧道绝缘层。第一隧道绝缘层和第二隧道绝缘层可以顺序堆叠在半导体衬底上。第二隧道绝缘层可以具有比第一隧道绝缘层更大的带隙。非易失性存储器件的制造方法可以包括：在半导体衬底上形成隧道绝缘层; 在隧道绝缘层上形成电荷存储层; 在电荷存储层上形成阻挡绝缘层; 以及在所述阻挡绝缘层上形成控制栅电极。

7. 发明申请

US20100319330A1 BURNER FOR DIESEL PARTICULATE FILTER REGENERATION 审中-公开
标题翻译：燃烧器用于柴油颗粒过滤器再生
公开(公告)号：US20100319330A1
公开(公告)日：2010-12-23
申请号：US12568893
申请日：2009-09-29
申请人： Soon Chul Hong , Hong Suk Kim
发明人： Soon Chul Hong , Hong Suk Kim
IPC分类号： F01N3/025
CPC分类号： F01N3/0256 , F01N2240/28
摘要： Provided is a burner using electric discharge as an ignition source such as arc or plasma rotating with flow, and more particularly, to a DPF regenerating burner that improves ignition performance of the burner by having a metal ball on a conical electrode surface where electricity is discharged, inducing accurate electric discharge through a metal ball, and supplying a fuel-air mixture toward the metal ball. The DPF regeneration burner includes a fuel-air mixture supplying unit having an injecting unit be connected to a reaction unit to supply the fuel-air mixture to the reaction unit; and a metal ball on a circumference of the electrode to ignite the injected fuel-air mixture. The DPF regenerating burner generates electric discharge in an electrode surface where a metal ball is located. The ignition performance is improved by accurately supplying a fuel-air mixture at a location where the electric discharge is generated.
摘要翻译：提供一种使用放电作为点火源的燃烧器，例如电弧或等离子体流动旋转，更具体地说，涉及一种DPF再生燃烧器，其通过在排出电力的圆锥形电极表面上具有金属球来改善燃烧器的点火性能通过金属球引起精确的放电，并向金属球供给燃料 - 空气混合物。 DPF再生燃烧器包括燃料 - 空气混合物供应单元，其具有连接到反应单元以将燃料 - 空气混合物供应到反应单元的注入单元; 以及在电极的圆周上的金属球以点燃喷射的燃料 - 空气混合物。 DPF再生燃烧器在金属球所在的电极表面产生放电。通过在产生放电的位置准确地供给燃料 - 空气混合物来提高点火性能。

8. 发明授权

US07711689B2 Methods and apparatus for storing, organizing, sharing and rating multimedia objects and documents 失效
标题翻译：用于存储，组织，共享和评估多媒体对象和文档的方法和装置
公开(公告)号：US07711689B2
公开(公告)日：2010-05-04
申请号：US11521116
申请日：2006-09-13
申请人： Hong Suk Kim
发明人： Hong Suk Kim
IPC分类号： G06F17/00
CPC分类号： G11B27/11 , G06Q10/10 , G06Q30/02 , Y10S707/99944
摘要： The present invention provides electronic methods and apparatus for storing and organizing access to restricted multimedia objects. This is accomplished using semantic networks by interactively defining a semantic network, identifying a relationship between nodes by associating a label with each semantic link, attaching multimedia objects to nodes and restricting user access to multimedia objects and/or the semantic network. The method allows users to access and edit the semantic network in a Java- or AJAX-based platform-independent software environment. The present invention further provides a method for rating semantic networks by allowing viewers to provide feedback regarding a semantic network's value or usefulness and then calculating a rating in accordance with the received feedback. The present invention further provides a method for linking semantic networks to build a knowledge base.
摘要翻译：本发明提供了用于存储和组织对受限多媒体对象的访问的电子方法和装置。这是通过交互地定义语义网络，通过将标签与每个语义链接相关联来标识节点之间的关系，将多媒体对象附加到节点并限制用户对多媒体对象和/或语义网络的访问来实现的。该方法允许用户在基于Java或AJAX的独立于平台的软件环境中访问和编辑语义网络。本发明还提供了一种通过允许观众提供关于语义网络的值或有用性的反馈，然后根据接收到的反馈来计算评级来评价语义网络的方法。本发明还提供了一种用于链接语义网络以构建知识库的方法。

9. 发明申请

US20090014781A1 Nonvolatile memory devices and methods for fabricating nonvolatile memory devices 有权
标题翻译：用于制造非易失性存储器件的非易失存储器件和方法
公开(公告)号：US20090014781A1
公开(公告)日：2009-01-15
申请号：US12216945
申请日：2008-07-14
申请人： Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
发明人： Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/42348 , H01L29/513 , H01L29/66833
摘要： A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer.
摘要翻译：非易失性存储器件可以包括：半导体衬底上的隧道绝缘层; 隧道绝缘层上的电荷存储层; 电荷存储层上的阻挡绝缘层; 以及在所述阻挡绝缘层上的控制栅电极。隧道绝缘层可以包括第一隧道绝缘层和第二隧道绝缘层。第一隧道绝缘层和第二隧道绝缘层可以顺序地堆叠在半导体衬底上。第二隧道绝缘层可以具有比第一隧道绝缘层更大的带隙。非易失性存储器件的制造方法可以包括：在半导体衬底上形成隧道绝缘层; 在隧道绝缘层上形成电荷存储层; 在电荷存储层上形成阻挡绝缘层; 以及在所述阻挡绝缘层上形成控制栅电极。

10. 发明申请

US20070111545A1 Methods of forming silicon dioxide layers using atomic layer deposition 审中-公开
标题翻译：使用原子层沉积法形成二氧化硅层的方法
公开(公告)号：US20070111545A1
公开(公告)日：2007-05-17
申请号：US11521145
申请日：2006-09-14
申请人： Sung-hae Lee , Ki-hyun Hwang , Jin-gyun Kim , Sang-ryol Yang , Hong-suk Kim , Jin-tae Noh
发明人： Sung-hae Lee , Ki-hyun Hwang , Jin-gyun Kim , Sang-ryol Yang , Hong-suk Kim , Jin-tae Noh
IPC分类号： H01L21/31
CPC分类号： H01L21/3141 , C23C16/401 , C23C16/452 , C23C16/45525 , C23C16/45542 , H01L21/02164 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/31612
摘要： Provided herein are methods of forming a silicon dioxide layer on a substrate using an atomic layer deposition (ALD) method that include supplying a Si precursor to the substrate and forming on the substrate a Si layer including at least one Si atomic layer; and (b) supplying an oxygen radical to the Si layer to replace at least one Si—Si bond within the Si layer with a Si—O bond, thereby oxidizing the Si layer, to form a silicon dioxide layer on the substrate.
摘要翻译：本文提供了使用原子层沉积（ALD）方法在衬底上形成二氧化硅层的方法，其包括向衬底提供Si前体并在衬底上形成包含至少一个Si原子层的Si层; 和（b）向Si层提供氧自由基以用Si-O键代替Si层内的至少一个Si-Si键，从而氧化Si层，以在衬底上形成二氧化硅层。

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