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    • 2. 发明授权
    • Dynamic burn-in method and apparatus
    • 动态老化方法和装置
    • US07023228B2
    • 2006-04-04
    • US10796035
    • 2004-03-10
    • Yoshihiro MaesakiHiroshi Teshigawara
    • Yoshihiro MaesakiHiroshi Teshigawara
    • G01R31/26
    • G01R31/2879G01R31/287
    • In a dynamic burn-in apparatus wherein a signal output from a signal generator is input to a semiconductor device to be tested in the burn-in tank, a converter is arranged at the output of the signal generator. The converter increases, by N times, the frequency of the signal output from a signal generator. The signal having the increased frequency and output from the converter, is input to the semiconductor device to be tested in the burn-in tank when the burn-in is operated at high-speed. The frequency of the signal is converted to the higher frequency, and the signal having the higher frequency is provided to the semiconductor device. As the result, the burn-in can be done in a shorter time for a high-speed sophisticated semiconductor device.
    • 在动态老化装置中,从信号发生器输出的信号输入到要在老化槽中进行测试的半导体器件,在信号发生器的输出端设置转换器。 转换器将从信号发生器输出的信号的频率增加N倍。 具有增加的频率和来自转换器的输出的信号被输入到在老化操作高速时在老化槽中进行测试的半导体器件。 信号的频率被转换为较高的频率,并且具有较高频率的信号被提供给半导体器件。 结果,可以在更短的时间内为高速复杂的半导体器件进行老化。
    • 3. 发明申请
    • Dynamic burn-in apparatus and adapter card for dynamic burn-in apparatus
    • 动态老化装置和动态老化装置适配卡
    • US20050099197A1
    • 2005-05-12
    • US10945839
    • 2004-09-21
    • Yoshihiro MaesakiHiroshi TeshigawaraSadao IshiharaYukio Tabuchi
    • Yoshihiro MaesakiHiroshi TeshigawaraSadao IshiharaYukio Tabuchi
    • G01R31/26G01R31/02G01R31/28G01R31/30
    • G01R31/2879G01R31/2863
    • An adapter card is provided which comprises: a clock signal converting circuit (1) which converts a clock signal, output from a signal generator contained in a burn-in apparatus, into a higher-frequency clock signal; and a plurality of delay circuits (2) for causing each burn-in signal output from the signal generator to synchronize with the clock signal, wherein a connector (4) of the adapter (10) is connected between a burn-in card and a connector mounted in a burn-in chamber, to burn in a semiconductor device mounted on the burn-in card. Alternatively, the input connector (4) of the adapter card (10) is connected to a connector mounted, for example, on the rear side of a back board of the burn-in apparatus; then, the output of the signal generator is fed into the adapter card via its connector (4), and the output of the adapter card (10) is supplied to the semiconductor device mounted on the burn-in card to burn in the semiconductor device.
    • 提供了一种适配器卡,包括:时钟信号转换电路(1),其将从老化装置中包含的信号发生器输出的时钟信号转换成高频时钟信号; 以及用于使从所述信号发生器输出的每个老化信号与所述时钟信号同步的多个延迟电路(2),其中所述适配器(10)的连接器(4)连接在老化卡和 连接器安装在老化室中,在安装在老化卡上的半导体器件中燃烧。 或者,适配器卡(10)的输入连接器(4)连接到例如安装在老化装置的背板的后侧的连接器; 然后,信号发生器的输出通过其连接器(4)馈送到适配器卡中,并且适配器卡(10)的输出被提供给安装在老化卡上的半导体器件,以在半导体器件中燃烧 。
    • 5. 发明授权
    • Dynamic burn-in equipment
    • 动态老化设备
    • US07023229B2
    • 2006-04-04
    • US10869966
    • 2004-06-18
    • Yoshihiro MaesakiHiroshi Teshigawara
    • Yoshihiro MaesakiHiroshi Teshigawara
    • G01R31/302G01R31/26
    • G01R31/2874G01R31/2862
    • An infrared sensor is provided in a burn-in chamber. The surface temperatures of two or more semiconductor devices are measured by the sensor. A control unit calculates the internal temperatures of the semiconductor devices based on the thermal resistance values of the semiconductor device packages and controls the temperature inside the burn-in chamber so that the average of the internal temperatures is brought to a desired temperature by using a temperature controller. Further, an acceleration coefficient is obtained based on the internal temperatures, a burn-in time is determined based on the acceleration coefficient and a preliminarily given accelerated period, and a burn-in acceleration test is conducted. Moreover, when a defective semiconductor is found, the defective portion of the defective semiconductor device is specified based on the surface temperature distribution of the semiconductor device measured by the infrared sensor.
    • 红外传感器设置在老化室内。 两个或多个半导体器件的表面温度由传感器测量。 控制单元基于半导体器件封装的热阻值来计算半导体器件的内部温度,并控制老化室内部的温度,使得内部温度的平均值通过使用温度 控制器。 此外,基于内部温度获得加速系数,基于加速系数和预先给定的加速时间来确定老化时间,进行老化加速试验。 此外,当发现有缺陷的半导体时,基于由红外传感器测量的半导体器件的表面温度分布来指定缺陷半导体器件的缺陷部分。