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1. 发明申请

US20110192347A1 SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICES MANUFACTURING METHOD 有权
公开(公告)号：US20110192347A1
公开(公告)日：2011-08-11
申请号：US13088907
申请日：2011-04-18
申请人： Yoshihiko YANAGISAWA , Mitsuro TANABE , Harunobu SAKUMA , Tadashi TAKASAKI
发明人： Yoshihiko YANAGISAWA , Mitsuro TANABE , Harunobu SAKUMA , Tadashi TAKASAKI
IPC分类号： H01L21/00 , C23C16/455 , C23C16/458 , C23C16/44
CPC分类号： C23C16/482 , C23C16/463
摘要： Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. A rotational drive unit horizontally rotates a support unit that supports a mounting substrate on which the substrate is mounted; and a coolant supply/discharge unit is connected to the lower end of the support unit through a connecting unit. The substrate mounting unit has a coolant circulation path therein. The support unit includes a first coolant flow path for passing coolant through the coolant circulation path. The coolant supply/discharge unit includes a second coolant flow path. The connecting unit connects the first coolant flow path and the second coolant flow path together and is provided outside the processing chamber.

2. 发明申请

US20110053382A1 SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICES MANUFACTURING METHOD 有权
标题翻译：基板加工设备和半导体器件制造方法
公开(公告)号：US20110053382A1
公开(公告)日：2011-03-03
申请号：US12868089
申请日：2010-08-25
申请人： Yoshihiko YANAGISAWA , Mitsuro TANABE , Harunobu SAKUMA , Tadashi TAKASAKI
发明人： Yoshihiko YANAGISAWA , Mitsuro TANABE , Harunobu SAKUMA , Tadashi TAKASAKI
IPC分类号： H01L21/18 , C23C16/56
CPC分类号： C23C16/482 , C23C16/463
摘要： Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. A rotational drive unit horizontally rotates a support unit that supports a mounting substrate on which the substrate is mounted; and a coolant supply/discharge unit is connected to the lower end of the support unit through a connecting unit. The substrate mounting unit has a coolant circulation path therein. The support unit includes a first coolant flow path for passing coolant through the coolant circulation path. The coolant supply/discharge unit includes a second coolant flow path. The connecting unit connects the first coolant flow path and the second coolant flow path together and is provided outside the processing chamber.
摘要翻译：在处理室中进行基板的基板处理，并且提高面内膜厚的均匀性。排气单元排出处理室中的气氛，并且供应由激励单元激发的处理气体。旋转驱动单元水平地旋转支撑安装基板的安装基板的支撑单元; 并且冷却剂供给/排出单元通过连接单元连接到支撑单元的下端。衬底安装单元在其中具有冷却剂循环路径。支撑单元包括用于使冷却剂通过冷却剂循环路径的第一冷却剂流动路径。冷却剂供给/排出单元包括第二冷却剂流动路径。连接单元将第一冷却剂流动路径和第二冷却剂流动路径连接在一起，并且设置在处理室的外部。

3. 发明申请

US20120276751A1 SUBSTRATE PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：基板加工装置及制造半导体装置的方法
公开(公告)号：US20120276751A1
公开(公告)日：2012-11-01
申请号：US13547935
申请日：2012-07-12
申请人： Atsushi SANO , Hideharu ITATANI , Mitsuro TANABE
发明人： Atsushi SANO , Hideharu ITATANI , Mitsuro TANABE
IPC分类号： H01L21/31
CPC分类号： C23C16/4408 , Y10T29/41
摘要： A substrate processing apparatus having a processing chamber for processing a substrate; a processing gas feeding line for feeding a processing gas into the processing chamber; an inert gas feeding line for feeding an inert gas into the processing chamber; an inert gas vent line provided in the inert gas feeding line, for exhausting the inert gas fed into the inert gas feeding line without feeding the inert gas into the processing chamber; a first valve provided in the inert gas feeding line, on a downstream side of a part where the inert gas vent line is provided in the inert gas feeding line; a second valve provided in the inert gas vent line; and an exhaust line that exhausts an inside of the processing chamber.
摘要翻译：一种具有处理基板的处理室的基板处理装置; 处理气体供给管线，用于将处理气体供给到处理室中; 用于将惰性气体供给到处理室中的惰性气体供给管线; 设置在惰性气体供给管线中的惰性气体排出管线，用于排出供入惰性气体供给管线的惰性气体，而不将惰性气体供给到处理室中; 设置在所述惰性气体供给管线中的第一阀，在所述惰性气体供给管路中设置有所述惰性气体排出管线的部分的下游侧; 设置在惰性气体排放管线中的第二阀; 以及排出处理室内部的排气管。

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