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1. 发明授权

US5411624A Magnetron plasma processing apparatus 失效
标题翻译：磁控管等离子体处理装置
公开(公告)号：US5411624A
公开(公告)日：1995-05-02
申请号：US173473
申请日：1993-12-27
申请人： Yoshihisa Hirano , Yoshifumi Takara , Masahiro Ogasawara
发明人： Yoshihisa Hirano , Yoshifumi Takara , Masahiro Ogasawara
IPC分类号： H01J37/34 , H01L21/00
CPC分类号： H01J37/3411 , H01J37/3405 , H01J37/347
摘要： A magnetron plasma processing apparatus includes a reaction chamber for housing an object to be processed, an electric field generating device, provided in the reaction chamber and having a first electrode for placing the object to be processed thereon and a second electrode opposing the first electrode, for generating an electric field between the first and second electrodes, a magnetic field generating device for generating a magnetic field having a component perpendicular to the electric field, and a device for supplying a reaction gas into the reaction chamber to generate a magnetron plasma by functions of the electric field and the magnetic field. A ring for strengthening the component of the electric field perpendicular to the magnetic field and for increasing the plasma generated at the peripheral portion of the object to be processed is provided to surround the peripheral portion of the object to be processed.
摘要翻译：磁控管等离子体处理装置包括用于容纳待处理物体的反应室，设置在反应室中的电场产生装置，具有用于放置待处理物体的第一电极和与第一电极相对的第二电极，用于在第一和第二电极之间产生电场，用于产生具有垂直于电场的分量的磁场的磁场产生装置，以及用于将反应气体供应到反应室中以通过功能产生磁控管等离子体的装置的电场和磁场。设置用于加强与磁场垂直的电场的分量并增加在被处理物体的周边部分产生的等离子体的环，以包围被处理物体的周边部分。

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