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    • 5. 发明授权
    • Methods of fabricating integrated circuit trench isolation regions
    • 集成电路沟槽隔离区的制作方法
    • US5971768A
    • 1999-10-26
    • US657981
    • 1996-05-29
    • Yoon-gi Kim
    • Yoon-gi Kim
    • H01L21/76H01L21/033H01L21/32H01L21/762
    • H01L21/32H01L21/0337H01L21/76232
    • Narrow trenches are formed in an integrated circuit substrate. An insulation layer, preferably silicon dioxide, is formed on the substrate, a mask region, preferably silicon nitride, formed on the insulation layer, and portions of the insulation layer adjacent and underlying edge portions of the mask region removed to undermine edge portions of the mask region and leave a portion of the insulation layer underlying the mask region. A semiconductor layer, preferably polysilicon, is then formed on the substrate, extending to underlie undermined portions of the mask region, and then selectively oxidized to leave a semiconductor region underlying the mask region and form an insulation region disposed adjacent the semiconductor region. The mask region is then removed to expose the semiconductor region and the remaining portion of the insulation layer. The semiconductor region and underlying portions of the substrate are then removed to form a trench between the insulation region and the remaining portion of the insulation layer. The trench preferably is filled by forming a field insulation layer on the substrate. One portion of the field insulation layer and one portion of the remain portion of the insulation layer surrounded by an insulation-filled trench region may be removed to thereby form one active region site surrounded by a insulation-filled trench, or a plurality of portions of each layer bordered by an insulation-filled trench region may be removed to form a plurality of active region sites partially bordered by the insulation-filled trench region.
    • 窄沟槽形成在集成电路基板中。 在衬底上形成绝缘层,优选二氧化硅,形成在绝缘层上的掩模区域,优选氮化硅,去除掩模区域相邻和下面的边缘部分的绝缘层的部分以破坏边缘部分 并且将绝缘层的一部分留在掩模区域下方。 然后在衬底上形成半导体层,优选多晶硅,延伸到掩模区域的破坏部分的下方,然后选择性地氧化以在掩模区域下面留下半导体区域,并形成邻近半导体区域布置的绝缘区域。 然后去除掩模区域以暴露半导体区域和绝缘层的剩余部分。 然后去除衬底的半导体区域和下面的部分,以在绝缘区域和绝缘层的剩余部分之间形成沟槽。 沟槽优选地通过在衬底上形成场绝缘层来填充。 可以去除场绝缘层的一部分和由绝缘填充沟槽区围绕的绝缘层的剩余部分的一部分,从而形成由绝缘填充沟槽围绕的一个有源区域,或多个部分 可以去除由绝缘填充沟槽区域界定的每个层,以形成由绝缘填充沟槽区域部分界定的多个有源区域。