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1. 发明授权

US08673802B2 Catalyst for catalytic cracking of hydrocarbon, which is used in production of light olefin and production method thereof 有权
标题翻译：用于轻烯烃生产的烃催化裂化催化剂及其制备方法
公开(公告)号：US08673802B2
公开(公告)日：2014-03-18
申请号：US12735647
申请日：2009-02-05
申请人： Dae Hyun Choo , Hong Chan Kim , Suk Joon Kim , Ji Min Kim , Tae Jin Kim , Sun Choi , Seung Hoon Oh , Yong Seung Kim , Deuk Soo Park , Yong Ki Park , Chul Wee Lee , Hee Young Kim , Won Choon Choi , Na Young Kang , Bu Sub Song
发明人： Dae Hyun Choo , Hong Chan Kim , Suk Joon Kim , Ji Min Kim , Tae Jin Kim , Sun Choi , Seung Hoon Oh , Yong Seung Kim , Deuk Soo Park , Yong Ki Park , Chul Wee Lee , Hee Young Kim , Won Choon Choi , Na Young Kang , Bu Sub Song
IPC分类号： B01J29/06
CPC分类号： B01J29/48 , B01J29/076 , B01J37/0045 , B01J37/28 , B01J2229/186 , B01J2229/20 , B01J2229/42 , C10G11/05 , C10G2300/301 , C10G2400/20
摘要： Disclosed are a molecular sieve catalyst and a preparation method thereof to produce light olefins from cracking naphtha catalytically in severe environments of high temperature and high moisture. In detail, the catalyst is prepared by spray-drying and calcining the mixed slurry, in which 0.01˜5.0 wt % of MnO2 and 1˜15 wt % of P2O5 are simultaneously imbedded in catalyst which consists of zeolite, clay and inorganic complex. According to the present invention, the method that manganese and phosphate are imbedded simultaneously in zeolite and inorganic complex is used to increases thermal-stability of obtained spherical catalyst, and increase olefin yield of cracking hydrocarbon such as naphtha by protecting acid-site of zeolite. To synthesize the required catalyst, the important procedures are mixing ratio and mixing sequence of Mn, P, zeolite, and inorganic complex.
摘要翻译：公开了一种分子筛催化剂及其制备方法，用于在严酷的高温高湿环境下催化裂解石脑油。详细地，通过喷雾干燥和煅烧混合浆料制备催化剂，其中0.01〜5.0wt％的MnO 2和1〜15wt％的P 2 O 5同时嵌入由沸石，粘土和无机络合物组成的催化剂中。根据本发明，使用锰和磷酸盐同时嵌入沸石和无机络合物的方法来提高所得球形催化剂的热稳定性，并通过保护沸石的酸性位点来提高裂解烃如石脑油的烯烃产率。为了合成所需的催化剂，重要的步骤是Mn，P，沸石和无机络合物的混合比和混合顺序。

2. 发明授权

US08431032B2 Method for continual preparation of polycrystalline silicon using a fluidized bed reactor 有权
标题翻译：使用流化床反应器连续制备多晶硅的方法
公开(公告)号：US08431032B2
公开(公告)日：2013-04-30
申请号：US12609330
申请日：2009-10-30
申请人： Hee Young Kim , Kyung Koo Yoon , Yong Ki Park , Won Choon Choi
发明人： Hee Young Kim , Kyung Koo Yoon , Yong Ki Park , Won Choon Choi
IPC分类号： B44C1/22
CPC分类号： C30B29/06 , B01J8/1809 , B01J8/1827 , B01J8/1836 , B01J8/24 , B01J8/34 , B01J19/02 , B01J2208/00398 , B01J2208/00407 , B01J2208/00415 , B01J2208/00495 , B01J2208/00539 , B01J2208/0084 , B01J2208/00991 , B01J2219/0209 , B01J2219/0218 , B01J2219/0236 , B01J2219/0254 , B01J2219/0272 , B01J2219/029 , C01B33/027 , C30B28/14
摘要： There is provided a method for continual preparation of granular polycrystalline silicon using a fluidized bed reactor, enabling a stable, long-term operation of the reactor by effective removal of silicon deposit accumulated on the inner wall of the reactor tube. The method comprises (i) a silicon particle preparation step, wherein silicon deposition occurs on the surface of the silicon particles, while silicon deposit is accumulated on the inner wall of the reactor tube encompassing the reaction zone; (ii) a silicon particle partial discharging step, wherein a part of the silicon particles remaining inside the reactor tube is discharged out of the fluidized bed reactor so that the height of the bed of the silicon particles does not exceed the height of the reaction gas outlet; and (iii) a silicon deposit removal step, wherein the silicon deposit is removed by supplying an etching gas into the reaction zone.
摘要翻译：提供了一种使用流化床反应器连续制备颗粒状多晶硅的方法，通过有效去除积聚在反应器管内壁上的硅沉积物，能够稳定地长期运行反应器。该方法包括：（i）硅颗粒制备步骤，其中在硅颗粒的表面上发生硅沉积，同时硅沉积物堆积在包围反应区的反应器管的内壁上; （ii）硅颗粒部分排出步骤，其中残留在反应器管内的硅颗粒的一部分从流化床反应器中排出，使得硅颗粒的床的高度不超过反应气体的高度出口; 和（iii）硅沉积物去除步骤，其中通过向反应区域中提供蚀刻气体来除去硅沉积物。

3. 发明授权

US08216643B2 Methods for preparation of high-purity polysilicon rods using a metallic core means 有权
标题翻译：使用金属芯制备高纯度多晶硅棒的方法
公开(公告)号：US08216643B2
公开(公告)日：2012-07-10
申请号：US12160837
申请日：2007-05-21
申请人： Hee Young Kim , Kyung Koo Yoon , Yong Ki Park , Won Choon Choi , Sang Jin Moon
发明人： Hee Young Kim , Kyung Koo Yoon , Yong Ki Park , Won Choon Choi , Sang Jin Moon
IPC分类号： C23C16/24
CPC分类号： C23C16/4581 , C01B33/035 , C23C16/24 , Y10T428/2913
摘要： A method for preparing a polysilicon rod using a metallic core means, including: installing a core means in an inner space of a deposition reactor used for preparing a silicon rod, the core means being constituted by forming at least one separation layer on the surface of a metallic core element and being connected to an electrode means, heating the core means by supplying electricity through the electrode means, and supplying a reaction gas into the inner space for silicon deposition, thereby forming a deposition output in an outward direction on the surface of the core means. The deposition output and the core means can be separated easily from the silicon rod output obtained by the process of silicon deposition, and the contamination of the deposition output caused by impurities of the metallic core element can be minimized, thereby a high-purity silicon can be prepared more economically and conveniently.
摘要翻译：一种使用金属芯装置制备多晶硅棒的方法，包括：将芯装置安装在用于制备硅棒的沉积反应器的内部空间中，所述芯装置通过在至少一个分离层的表面上形成金属芯元件，与电极装置连接，通过电极装置供电来加热芯装置，并将反应气体供给到用于硅沉积的内部空间中，从而在表面上形成向外的沉积输出核心手段。沉积输出和芯装置可以容易地从通过硅沉积过程获得的硅棒输出分离，并且可以最小化由金属芯元件的杂质引起的沉积输出的污染，从而高纯度的硅可以准备更经济，便捷。

4. 发明申请

US20120043253A1 SEMICONDUCTOR PACKAGE TRANSFERRING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME 有权
标题翻译：半导体封装传输装置及其制造半导体器件的方法
公开(公告)号：US20120043253A1
公开(公告)日：2012-02-23
申请号：US13193527
申请日：2011-07-28
申请人： Hyeck-Jin Jeong , Yong-Ki Park , Yong-Jin Jung , Heul-Seog Kim
发明人： Hyeck-Jin Jeong , Yong-Ki Park , Yong-Jin Jung , Heul-Seog Kim
IPC分类号： B65D85/00
CPC分类号： H01L21/67333
摘要： A semiconductor package transferring apparatus is disclosed. The apparatus includes a tray that includes a front side and a rear side opposite the front side, the rear side including a plurality of package covering portions that each correspond to the shape of a semiconductor package and that are arranged to align with corresponding package loading portions on a front side of another tray. Each package covering portion has a surface configured to cover a semiconductor chip disposed below the surface. The apparatus further includes an anti-attachment portion disposed on the surface of one or more of the package covering portions. For each package covering portion on which an anti-attachment portion is disposed, the anti-attachment portion protrudes beyond the surface of the package covering portion.
摘要翻译：公开了半导体封装传送装置。该装置包括一个托盘，该托盘包括前侧和与前侧相对的后侧，后侧包括多个封装覆盖部分，每个封装覆盖部分对应于半导体封装的形状，并且被布置成与相应的封装装载部分在另一个托盘的正面。每个封装覆盖部分具有覆盖设置在表面下方的半导体芯片的表面。该装置还包括设置在一个或多个包装覆盖部分的表面上的防附着部分。对于其上设置防附着部分的每个包装覆盖部分，防附着部分突出超过包装覆盖部分的表面。

5. 发明授权

US08114352B2 High-pressure fluidized bed reactor for preparing granular polycrystalline silicon 有权
标题翻译：用于制备颗粒状多晶硅的高压流化床反应器
公开(公告)号：US08114352B2
公开(公告)日：2012-02-14
申请号：US12609364
申请日：2009-10-30
申请人： Hee Young Kim , Kyung Koo Yoon , Yong Ki Park , Won Choon Choi
发明人： Hee Young Kim , Kyung Koo Yoon , Yong Ki Park , Won Choon Choi
IPC分类号： G05D16/00 , G05B1/00 , B01J19/00 , B01J8/18 , F27B15/00 , F27B15/08 , F27B15/14 , F27B15/16 , C01B33/02
CPC分类号： C01B33/027 , B01J3/046 , B01J8/1827 , B01J8/1836 , B01J2208/00398 , B01J2208/00407 , C01B33/029 , C01B33/03
摘要： The present invention relates to a high-pressure fluidized bed reactor for preparing granular polycrystalline silicon, comprising (a) a reactor tube, (b) a reactor shell encompassing the reactor tube, (c) an inner zone formed within the reactor tube, where a silicon particle bed is formed and silicon deposition occurs, and an outer zone formed in between the reactor shell and the reactor tube, which is maintained under the inert gas atmosphere, and (d) a controlling means to keep the difference between pressures in the inner zone and the outer zone being maintained within the range of 0 to 1 bar, thereby enabling to maintain physical stability of the reactor tube and efficiently prepare granular polycrystalline silicon even at relatively high reaction pressure.
摘要翻译：本发明涉及一种用于制备颗粒状多晶硅的高压流化床反应器，包括（a）反应器管，（b）包围反应器管的反应器壳，（c）在反应器管内形成的内部区，其中形成硅颗粒床并发生硅沉积，并且在反应器壳体和反应器管之间形成的外部区域保持在惰性气体气氛下，以及（d）控制装置，以保持在内部区域和外部区域保持在0至1巴的范围内，从而能够保持反应管的物理稳定性，并且即使在相对高的反应压力下也能有效地制备颗粒状多晶硅。

6. 发明授权

US07906694B2 Method of preparing mono-iodo benzene through transiodination 有权
标题翻译：通过碘化碘制备单碘苯的方法
公开(公告)号：US07906694B2
公开(公告)日：2011-03-15
申请号：US12519894
申请日：2007-11-23
申请人： Han-Seok Kim , Jong-In Lee , Il-Hoon Cha , Yong-Ki Park , Won-Choon Choi , Bu-Sub Song
发明人： Han-Seok Kim , Jong-In Lee , Il-Hoon Cha , Yong-Ki Park , Won-Choon Choi , Bu-Sub Song
IPC分类号： C07C17/00
CPC分类号： C07C17/12 , C07C25/02
摘要： The present invention relates to a method of preparing mono-iodo benzene with a transiodination reaction, and more preferably a method of preparing mono-iodo benzene including a step of performing transiodination of a reactant including benzene and at least a multi-iodo benzene selected from the group consisting of di-iodo benzene and tri-iodo benzene with an HY or HBeta type of zeolite having a Si/Al molar ratio of 10 to 100 as a catalyst. The method of the present invention has an advantage that iodine is recovered from by-products including m-di-iodo benzene, o-di-iodo benzene, and tri-iodo benzene obtained in the process of preparing p-di-iodo benzene, thereby resulting in minimizing the loss of iodine.
摘要翻译：本发明涉及一种通过过碘化反应制备单碘苯的方法，更优选的是制备单碘苯的方法，包括以下步骤：包括苯和至少一种选自以下的多碘苯的反应物的过碘化：由具有Si / Al摩尔比为10〜100的HY或HBeta型沸石的二碘苯和三碘苯作为催化剂组成的组。本发明的方法具有在制备对二碘苯的方法中得到的副产物中回收碘的优点，所述副产物包括间二碘苯，邻二碘苯和三碘苯，从而使碘的损失最小化。

7. 发明申请

US20060024226A1 Catalyst and method for decomposition of perfluoro-compound in waste gas 审中-公开
标题翻译：催化剂和废气中全氟化合物的分解方法
公开(公告)号：US20060024226A1
公开(公告)日：2006-02-02
申请号：US10527261
申请日：2003-06-02
申请人： Yong-Ki Park , Jong Reol , Hee Kim , Dong Lee
发明人： Yong-Ki Park , Jong Reol , Hee Kim , Dong Lee
IPC分类号： B01J27/187 , B01J27/14
CPC分类号： B01J37/0201 , B01D53/8659 , B01J27/16 , Y02C20/30
摘要： The present invention relates to a catalyst for the decomposition of exhausted perfluoro-compounds (PFCs) and a catalytic decomposition method of PFCs by using the same. More particularly, the present invention relates to a PFC decomposition catalyst prepared in such a manner that a surface of aluminum oxide is loaded with phosphorous (P) component at a aluminum/phosphorous mole ratio of 10 to 100 and a decomposition method of PFCs by using the catalyst. The present catalyst can be decomposed PFCs at 100% rate exhausted from semiconductor manufacturing industry and thus prevent the release of PFCs having high global warming potential into atmosphere.
摘要翻译：本发明涉及用于分解全氟化合物（PFCs）的催化剂和通过使用它们的PFCs的催化分解方法。更具体地说，本发明涉及以这样的方式制备的PFC分解催化剂：使氧化铝的表面以铝/磷摩尔比为10〜100的磷（P）成分和PFC的分解方法催化剂。本发明的催化剂可以从半导体制造业中以100％的速率分解PFC，从而防止具有高全球变暖潜力的PFC释放到大气中。

8. 外观设计

USD430137S Audio amplifier having a digital display window 失效
公开(公告)号：USD430137S
公开(公告)日：2000-08-29
申请号：US108658
申请日：1999-08-02
申请人： Yong Ki Park
设计人： Yong Ki Park

9. 发明授权

US09108180B2 Cation-exchanged zeolite catalyst and process for producing mono-iodo benzene through transiodination by using it 有权
公开(公告)号：US09108180B2
公开(公告)日：2015-08-18
申请号：US13142903
申请日：2009-12-24
申请人： Yong-Jin Yi , Jae-Bong Lim , Il-Hoon Cha , Han-Seok Kim , Yong-Ki Park , Won-Choon Choi , Da-Young Min
发明人： Yong-Jin Yi , Jae-Bong Lim , Il-Hoon Cha , Han-Seok Kim , Yong-Ki Park , Won-Choon Choi , Da-Young Min
IPC分类号： C07C17/00 , B01J29/06 , B01J29/04 , B01J29/08 , C07C17/37 , C07C17/35 , B01J29/40 , B01J29/70
CPC分类号： B01J29/04 , B01J29/061 , B01J29/084 , B01J29/40 , B01J29/7007 , C07C17/35 , C07C17/37 , C07C25/02
摘要： The present invention relates to a cation-exchanged zeolite catalyst for an transiodination and a process for producing mono-iodo benzene by using it. Particularly, the cation-exchanged zeolite catalyst has a molar ratio of Si/Al from 5 to 100 and is ion-exchanged with an alkali metal or an alkaline earth metal in range of 2% to 50% of ion exchange capacity.Further, the process for producing mono-iodo benzene of the present invention comprises the step of performing a transiodination by using the cation-exchanged zeolite catalyst to produce mono-iodo benzene from reactants including benzene and one or more multi-iodo benzenes selected from the group consisting of di-iodo benzene and tri-iodo benzene.

10. 发明授权

US08937483B2 Semiconductor package transferring apparatus and method of manufacturing semiconductor device using the same 有权
标题翻译：半导体封装传送装置及其制造方法
公开(公告)号：US08937483B2
公开(公告)日：2015-01-20
申请号：US13193527
申请日：2011-07-28
申请人： Hyeck-Jin Jeong , Yong-Ki Park , Yong-Jin Jung , Heul-Seog Kim
发明人： Hyeck-Jin Jeong , Yong-Ki Park , Yong-Jin Jung , Heul-Seog Kim
IPC分类号： G01R31/00 , G01R31/10 , G01R31/02 , F27D5/00 , H01L21/673
CPC分类号： H01L21/67333
摘要： A semiconductor package transferring apparatus is disclosed. The apparatus includes a tray that includes a front side and a rear side opposite the front side, the rear side including a plurality of package covering portions that each correspond to the shape of a semiconductor package and that are arranged to align with corresponding package loading portions on a front side of another tray. Each package covering portion has a surface configured to cover a semiconductor chip disposed below the surface. The apparatus further includes an anti-attachment portion disposed on the surface of one or more of the package covering portions. For each package covering portion on which an anti-attachment portion is disposed, the anti-attachment portion protrudes beyond the surface of the package covering portion.
摘要翻译：公开了半导体封装传送装置。该装置包括一个托盘，该托盘包括前侧和与前侧相对的后侧，后侧包括多个封装覆盖部分，每个封装覆盖部分对应于半导体封装的形状，并且被布置成与相应的封装装载部分在另一个托盘的正面。每个封装覆盖部分具有覆盖设置在表面下方的半导体芯片的表面。该装置还包括设置在一个或多个包装覆盖部分的表面上的防附着部分。对于其上设置防附着部分的每个包装覆盖部分，防附着部分突出超过包装覆盖部分的表面。

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