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1. 发明申请

US20130323629A1 REFLECTION TYPE BLANK MASKS, METHODS OF FABRICATING THE SAME, AND METHODS OF FABRICATING REFLECTION TYPE PHOTO MASKS USING THE SAME 有权
标题翻译：反射型空白掩模，其制造方法以及使用其制造反射型遮罩的方法
公开(公告)号：US20130323629A1
公开(公告)日：2013-12-05
申请号：US13614373
申请日：2012-09-13
申请人： Yong Dae KIM , Byung Ho Nam
发明人： Yong Dae KIM , Byung Ho Nam
IPC分类号： G03F1/24
CPC分类号： G03F1/42 , G03F1/24
摘要： Reflection type blank masks are provided. The blank mask includes a substrate, a reflection layer substantially on the substrate, at least one fiducial mark substantially on the reflection layer, an absorption layer substantially on the at least one fiducial mark and the reflection layer, and a resist layer substantially on the absorption layer.
摘要翻译：提供反射式空白面具。空白掩模包括基板，基本上在基板上的反射层，基本上在反射层上的至少一个基准标记，基本上在至少一个基准标记和反射层上的吸收层，以及基本上在吸收层上的抗蚀剂层层。

2. 发明授权

US08535545B2 Method for fabricating pellicle of EUV mask 失效
标题翻译： EUV掩模防护薄膜的制造方法
公开(公告)号：US08535545B2
公开(公告)日：2013-09-17
申请号：US12837863
申请日：2010-07-16
申请人： Yong Dae Kim
发明人： Yong Dae Kim
IPC分类号： B44C1/22
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/62
摘要： A method for fabricating a pellicle of an EUV mask is provided. An insulation layer is formed over a silicon substrate, and a mesh is formed over the insulation layer. A frame exposing a rear surface of the insulation layer is formed by selectively removing a center portion of a rear surface of the silicon substrate. A membrane layer is deposited over the mesh and an exposed top surface of the insulation layer which is adjacent to the mesh. A rear surface of the membrane layer is exposed by selectively removing the portion of the insulation layer which is exposed by the frame.
摘要翻译：提供一种制造EUV掩模的防护薄膜的方法。在硅衬底上形成绝缘层，并且在绝缘层上形成网。通过选择性地去除硅衬底的后表面的中心部分，形成暴露绝缘层的后表面的框架。膜层沉积在网格上，并且绝缘层的暴露的与网格相邻的顶表面。通过选择性地去除被框架暴露的绝缘层的部分来暴露膜层的后表面。

3. 发明申请

US20130200239A1 CUP HOLDER TRAY FOR ARMREST OF AUTOMOBILE REAR SEAT, 有权
标题翻译：用于汽车后座椅的杯子托盘，
公开(公告)号：US20130200239A1
公开(公告)日：2013-08-08
申请号：US13643868
申请日：2011-04-26
申请人： Yong Dae Kim
发明人： Yong Dae Kim
IPC分类号： B60N3/10
CPC分类号： B60N3/102 , B60N2/757 , B60N2/79 , B60N2002/957
摘要： A cup holder tray for an armrest of an automobile rear seat has a tray placed and installed in an armrest of a rear seat, and structured by a cup holder which protrudes forward by being unlocked from a lock member formed at a back of a main body with a one-touch operation when a cover provided in a front face is pressed. A stopper is inserted in and pivotally supported at a lid plate of the tray, and while a position of the stopper is being shifted by a rotation of the stopper due to the weight thereof between the lid plate and the cup holder, a backward movement of the cup holder is restricted and released.
摘要翻译：用于汽车后排座椅的扶手的杯架托架具有放置并安装在后座椅的扶手中的托盘，其由通过从形成在主体后部的锁定构件解锁而向前突出的杯架构成当前面设置的盖子被按压时，进行单触操作。止动器被插入并枢转地支撑在托盘的盖板上，并且当挡块的位置由于盖板和杯架之间的重量而被挡块的旋转移动时，向后移动杯架受到限制和释放。

4. 发明授权

US07186301B2 Device and method for cleaning photomask 有权
标题翻译：清洁光掩模的装置和方法
公开(公告)号：US07186301B2
公开(公告)日：2007-03-06
申请号：US11276974
申请日：2006-03-20
申请人： Yong Dae Kim , Jong Min Kim , Han Byul Kang , Hyun Joon Cho , Sang Soo Choi
发明人： Yong Dae Kim , Jong Min Kim , Han Byul Kang , Hyun Joon Cho , Sang Soo Choi
IPC分类号： B08B3/00
CPC分类号： H01L21/67207 , G03F1/32 , G03F1/82
摘要： Disclosed herein is a device and a method of cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby preventing diffusion of the ions. Etching of Cr and MoSiON layers due to a cleaning process is suppressed in order to significantly reduce a change in phase and transmissivity of optical properties of Cr and MoSiON.
摘要翻译：本文公开了一种清洁光掩模的装置和方法，其防止在光刻工艺期间在光掩模的表面上产生雾度。光掩模被热处理以除去其表面上的残余离子并引起Cr和MoSiON层的固化和氧化，从而防止离子的扩散。抑制由于清洗过程而导致的Cr和MoSiON层的蚀刻，以显着地减少Cr和MoSiON的光学性质的相位变化和透射率。

5. 发明申请

US20060207633A1 DEVICE AND METHOD FOR CLEANING PHOTOMASK 有权
标题翻译：用于清洁光刻胶的装置和方法
公开(公告)号：US20060207633A1
公开(公告)日：2006-09-21
申请号：US11276974
申请日：2006-03-20
申请人： Yong Dae KIM , Jong Min KIM , Han Byul KANG , Hyun Joon CHO , Sang Soo CHOI
发明人： Yong Dae KIM , Jong Min KIM , Han Byul KANG , Hyun Joon CHO , Sang Soo CHOI
IPC分类号： B08B7/00 , B08B3/00
CPC分类号： H01L21/67207 , G03F1/32 , G03F1/82
摘要： Disclosed herein is a device and a method of cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby preventing diffusion of the ions. Etching of Cr and MoSiON layers due to a cleaning process is suppressed in order to significantly reduce a change in phase and transmissivity of optical properties of Cr and MoSiON.
摘要翻译：本文公开了一种清洁光掩模的装置和方法，其防止在光刻工艺期间在光掩模的表面上产生雾度。光掩模被热处理以除去其表面上的残余离子并引起Cr和MoSiON层的固化和氧化，从而防止离子的扩散。抑制由于清洗过程而导致的Cr和MoSiON层的蚀刻，以显着地减少Cr和MoSiON的光学性质的相位变化和透射率。

6. 发明申请

US20110065278A1 METHOD FOR FABRICATING PELLICLE OF EUV MASK 失效
标题翻译：用于制作防毒面具的方法
公开(公告)号：US20110065278A1
公开(公告)日：2011-03-17
申请号：US12837863
申请日：2010-07-16
申请人： Yong Dae KIM
发明人： Yong Dae KIM
IPC分类号： H01L21/302
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/62
摘要： A method for fabricating a pellicle of an EUV mask is provided. An insulation layer is formed over a silicon substrate, and a mesh is formed over the insulation layer. A frame exposing a rear surface of the insulation layer is formed by selectively removing a center portion of a rear surface of the silicon substrate. A membrane layer is deposited over the mesh and an exposed top surface of the insulation layer which is adjacent to the mesh. A rear surface of the membrane layer is exposed by selectively removing the portion of the insulation layer which is exposed by the frame.
摘要翻译：提供一种制造EUV掩模的防护薄膜的方法。在硅衬底上形成绝缘层，并且在绝缘层上形成网。通过选择性地去除硅衬底的后表面的中心部分，形成暴露绝缘层的后表面的框架。膜层沉积在网格上，并且绝缘层的暴露的与网格相邻的顶表面。通过选择性地去除被框架暴露的绝缘层的部分来暴露膜层的后表面。

7. 发明申请

US20100224883A1 THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME 审中-公开
标题翻译：薄膜晶体管，其制造方法以及包括其的有机发光二极管显示装置
公开(公告)号：US20100224883A1
公开(公告)日：2010-09-09
申请号：US12714201
申请日：2010-02-26
申请人： Byoung-Keon PARK , Tae-Hoo Yang , Jin-Wook Seo , Ki-Yong Lee , Maxim Lisachenko , Bo-Kyung Choi , Dae-Woo Lee , Kil-Won Lee , Dong-Hyun Lee , Jong-Ryuk Park , Ji-Su Ahn , Yong-Dae Kim , Heung-Yeol Na , Min-Jae Jeong , Yun-Mo Chung , Jong-Won Hong , Eu-Gene Kang , Seok-Rak Chang , Jae-Wan Jung , Sang-Yon Yoon
发明人： Byoung-Keon PARK , Tae-Hoo Yang , Jin-Wook Seo , Ki-Yong Lee , Maxim Lisachenko , Bo-Kyung Choi , Dae-Woo Lee , Kil-Won Lee , Dong-Hyun Lee , Jong-Ryuk Park , Ji-Su Ahn , Yong-Dae Kim , Heung-Yeol Na , Min-Jae Jeong , Yun-Mo Chung , Jong-Won Hong , Eu-Gene Kang , Seok-Rak Chang , Jae-Wan Jung , Sang-Yon Yoon
IPC分类号： H01L33/16 , H01L29/786 , H01L21/336 , H01L21/20
CPC分类号： H01L29/6675 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L27/1277 , H01L29/66757 , H01L29/66765 , H01L29/78696
摘要： A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode.
摘要翻译：薄膜晶体管（TFT）和有机发光二极管（OLED）显示装置。 TFT和OLED显示装置包括基板，设置在基板上的缓冲层，设置在缓冲层上的半导体层，与半导体层绝缘的栅电极，将半导体层与栅电极绝缘的栅极绝缘层，以及与栅电极绝缘并且部分地连接到半导体层的源电极和漏电极，其中半导体层由通过金属催化剂结晶的多晶硅层形成，并且使用蚀刻剂通过吸气除去金属催化剂。此外，OLED显示装置包括设置在基板的整个表面上的绝缘层，设置在绝缘层上并电连接到源极和漏极之一的第一电极，有机层和第二电极。

8. 发明授权

US07377984B2 Method for cleaning a photomask 有权
标题翻译：清洁光掩模的方法
公开(公告)号：US07377984B2
公开(公告)日：2008-05-27
申请号：US11624275
申请日：2007-01-18
申请人： Yong Dae Kim , Jong Min Kim , Han Byul Kang , Hyun Joon Cho , Sang Soo Choi
发明人： Yong Dae Kim , Jong Min Kim , Han Byul Kang , Hyun Joon Cho , Sang Soo Choi
IPC分类号： B08B3/04
CPC分类号： G03F1/82
摘要： Disclosed herein is a method of cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby preventing diffusion of the ions. Etching of Cr and MoSiON layers due to a cleaning process is suppressed in order to significantly reduce a change in phase and transmissivity of optical properties of Cr and MoSiON.
摘要翻译：本文公开了一种清洁光掩模的方法，其防止在光刻工艺期间在光掩模的表面上产生雾度。光掩模被热处理以除去其表面上的残余离子并引起Cr和MoSiON层的固化和氧化，从而防止离子的扩散。抑制由于清洗过程而导致的Cr和MoSiON层的蚀刻，以显着地减少Cr和MoSiON的光学性质的相位变化和透射率。

9. 发明申请

US20070215188A1 DEVICE FOR CLEANING A PHOTOMASK 审中-公开
标题翻译：清洁光电装置的装置
公开(公告)号：US20070215188A1
公开(公告)日：2007-09-20
申请号：US11624266
申请日：2007-01-18
申请人： Yong Dae KIM , Jong Min KIM , Han Byul KANG , Hyun Joon CHO , Sang Soo CHOI
发明人： Yong Dae KIM , Jong Min KIM , Han Byul KANG , Hyun Joon CHO , Sang Soo CHOI
IPC分类号： B08B3/00
CPC分类号： G03F1/82
摘要： Disclosed herein is a device for cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby preventing diffusion of the ions. Etching of Cr and MoSiON layers due to a cleaning process is suppressed in order to significantly reduce a change in phase and transmissivity of optical properties of Cr and MoSiON.
摘要翻译：本文公开了一种用于清洁光掩模的装置，其防止在光刻工艺期间在光掩模的表面上产生雾度。光掩模被热处理以除去其表面上的残余离子并引起Cr和MoSiON层的固化和氧化，从而防止离子的扩散。抑制由于清洗过程而导致的Cr和MoSiON层的蚀刻，以显着地减少Cr和MoSiON的光学性质的相位变化和透射率。

10. 发明申请

US20060033175A1 Load lock modules and semiconductor manufacturing apparatuses 审中-公开
标题翻译：加载锁模块和半导体制造装置
公开(公告)号：US20060033175A1
公开(公告)日：2006-02-16
申请号：US11201420
申请日：2005-08-11
申请人： Yong-Dae Kim
发明人： Yong-Dae Kim
IPC分类号： H01L31/0232
CPC分类号： H01L21/67201
摘要： A load lock module may include a chamber adapted to receive at least one wafer, a supply tube adapted to supply purging gas into the chamber, an outlet adapted to remove the purging gas from the chamber, and an ejector adapted to provide the purging gas to the surface of the at least one wafer received by the chamber.
摘要翻译：负载锁定模块可以包括适于容纳至少一个晶片的腔室，适于将净化气体供应到所述腔室中的供应管，适于从所述腔室移除所述清洗气体的出口以及适于将所述清洗气体提供给所述至少一个晶片的表面由所述腔室接收。

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