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1. 发明申请

US20220111523A1 CONTROLLING A MOBILE ROBOT 有权
公开(公告)号：US20220111523A1
公开(公告)日：2022-04-14
申请号：US17556246
申请日：2021-12-20
申请人： Eng Kwong Lee , Bernd Gassmann , Ying Wei Liew , Say Chuan Tan , Frederik Pasch , Fabian Oboril , Cornelius Buerkle , Chien Chern Yew
发明人： Eng Kwong Lee , Bernd Gassmann , Ying Wei Liew , Say Chuan Tan , Frederik Pasch , Fabian Oboril , Cornelius Buerkle , Chien Chern Yew
IPC分类号： B25J9/16 , B25J5/00 , G05D1/02
摘要： Systems and techniques for controlling a mobile robot. In an example, the system may include a processor and memory, including instructions, which when executed by the processor, cause the processor to determine a state of the mobile robot. The state of the mobile robot may be determined using at least one of: data provided by the mobile robot or data captured by one or more sensors proximate to or attached to the mobile robot. The system may determine a state of an object proximate to the mobile robot using the data captured by the one or more sensors, and identify information relating to one or more available stopping points. The system may identify a condition of the mobile robot that requires the mobile robot to stop and issue a command to the mobile robot to navigate to a particular one of the one or more available stopping points.

2. 发明授权

US09018913B2 System for determining battery impedance 有权
标题翻译：确定电池阻抗的系统
公开(公告)号：US09018913B2
公开(公告)日：2015-04-28
申请号：US13475891
申请日：2012-05-18
申请人： Justin Dale Middleton , Wellington Ying-Wei Kwok
发明人： Justin Dale Middleton , Wellington Ying-Wei Kwok
IPC分类号： G01R31/36 , H02J7/00
CPC分类号： G01R31/3624 , G01R31/3662 , G01R31/3679 , H02J7/0077 , Y10T307/406
摘要： A method for real-time characterization of a battery includes providing electric power to one or more electrical power loads, charging and discharging the battery based on power needs of the one or more electrical power loads, and monitoring for a circumstance where charging and discharging of the battery results in terminal voltage of the battery substantially equaling open-circuit voltage of the battery and recording the measured terminal voltage as a first measured voltage. The method may also include monitoring for a subsequent circumstance subsequent when charging and discharging the battery results in battery current larger than a predetermined value and recording an existing terminal voltage as a second measured voltage. The method may also include using the first and second measured voltages to determine a measured internal impedance of the battery. These actions may be performed between startup and shutdown of the power system.
摘要翻译：一种用于电池的实时表征的方法包括向一个或多个电力负载提供电力，基于一个或多个电力负载的电力需要对电池进行充电和放电，以及监测充电和放电电池导致电池的端子电压基本上等于电池的开路电压，并记录测量的端子电压作为第一测量电压。该方法还可以包括当对电池进行充电和放电导致电池电流大于预定值并且将现有终端电压记录为第二测量电压时监视随后的情况。该方法还可以包括使用第一和第二测量电压来确定测量的电池的内部阻抗。这些动作可以在电力系统的启动和停机之间执行。

3. 发明申请

US20150037276A1 HYDROCOLLOID COMPOSITION AND AN ARTICLE CONTAINING THE SAME 审中-公开
标题翻译：水解胶组合物和含有该组合物的物品
公开(公告)号：US20150037276A1
公开(公告)日：2015-02-05
申请号：US14355916
申请日：2011-11-08
申请人： Ting Fan , Ying Wei Xie , Jing Huang , Kai Qiu , Grace Ho , Dong Wu , Jie Hu
发明人： Ting Fan , Ying Wei Xie , Jing Huang , Kai Qiu , Grace Ho , Dong Wu , Jie Hu
IPC分类号： A61K9/70 , A61K36/23 , A61K31/045 , A61K36/53 , A61L26/00 , A61K31/785 , A61K31/015 , A61K36/61
CPC分类号： A61K9/7023 , A61K9/7007 , A61K31/015 , A61K31/045 , A61K31/785 , A61K36/00 , A61K36/23 , A61K36/53 , A61K36/61 , A61L15/44 , A61L26/0014 , A61L26/0061
摘要： The present invention provides a hydrocolloid composition which, based on 100% by weight of the hydrocolloid composition, comprises: 10-90%) by weight of a polyisobutylene tackifier; 5-55% by weight of a hydrophilic absorbing substance; and 0.1-20% by weight of a functional ingredient. The invention further provides an article containing the hydrocolloid composition.
摘要翻译：本发明提供了一种水胶体组合物，其基于100重量％的水胶体组合物，包含：10-90重量％的聚异丁烯增粘剂; 5-55重量％的亲水性吸收物质; 和0.1-20重量％的功能成分。本发明进一步提供含有水胶体组合物的制品。

4. 发明授权

US08658353B2 Liver cell toxicity assay 失效
标题翻译：肝细胞毒性测定
公开(公告)号：US08658353B2
公开(公告)日：2014-02-25
申请号：US12613966
申请日：2009-11-06
申请人： Ye Fang , Ann M. Ferrie , Haiyan Sun , Elizabeth Tran , Ying Wei
发明人： Ye Fang , Ann M. Ferrie , Haiyan Sun , Elizabeth Tran , Ying Wei
IPC分类号： C12Q1/70
CPC分类号： G01N33/5067 , C12N2503/00 , C12Q1/025 , G01N33/5014 , G01N33/54373
摘要： The disclosure provides methods for characterizing the toxicity of a candidate molecule to liver cells as defined herein; methods of culturing metabolically active liver cells on a biosensor as defined herein; and biosensor liver culture systems as defined herein.
摘要翻译：本公开提供了表征候选分子对本文定义的肝细胞的毒性的方法; 在本文定义的生物传感器上培养代谢活性肝细胞的方法; 和如本文所定义的生物传感器肝脏培养系统。

5. 发明申请

US20130171837A1 SEMICONDUCTOR PROCESS 有权
标题翻译：半导体工艺
公开(公告)号：US20130171837A1
公开(公告)日：2013-07-04
申请号：US13342191
申请日：2012-01-02
申请人： Te-Lin Sun , Chien-Liang Lin , Yu-Ren Wang , Ying-Wei Yen
发明人： Te-Lin Sun , Chien-Liang Lin , Yu-Ren Wang , Ying-Wei Yen
IPC分类号： H01L21/318
CPC分类号： H01L21/02247 , H01L21/02329 , H01L21/3185 , H01L21/76224 , H01L21/76237
摘要： A semiconductor process includes the following steps. A substrate having a recess is provided. A decoupled plasma nitridation process is performed to nitride the surface of the recess for forming a nitrogen containing liner on the surface of the recess. A nitrogen containing annealing process is then performed on the nitrogen containing liner.
摘要翻译：半导体工艺包括以下步骤。提供具有凹部的基板。进行解耦等离子体氮化处理以在凹部的表面上氮化用于形成含氮衬垫的凹部的表面。然后对含氮衬垫进行含氮退火工艺。

6. 发明授权

US08394688B2 Process for forming repair layer and MOS transistor having repair layer 有权
标题翻译：用于形成修复层的方法和具有修复层的MOS晶体管
公开(公告)号：US08394688B2
公开(公告)日：2013-03-12
申请号：US13169129
申请日：2011-06-27
申请人： Chien-Liang Lin , Ying-Wei Yen , Yu-Ren Wang
发明人： Chien-Liang Lin , Ying-Wei Yen , Yu-Ren Wang
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L29/7834 , H01L21/28035 , H01L21/28247 , H01L29/165 , H01L29/6656 , H01L29/6659 , H01L29/66628 , H01L29/66636
摘要： A repair layer forming process includes the following steps. Firstly, a substrate is provided, and a gate structure is formed on the substrate, wherein the gate structure at least includes a gate dielectric layer and a gate conductor layer. Then, a nitridation process is performed to form a nitrogen-containing superficial layer on a sidewall of the gate structure. Then, a thermal oxidation process is performed to convert the nitrogen-containing superficial layer into a repair layer. Moreover, a metal-oxide-semiconductor transistor includes a substrate, a gate dielectric layer, a gate conductor layer and a repair layer. The gate dielectric layer is formed on the substrate. The gate conductor layer is formed on the gate dielectric layer. The repair layer is at least partially formed on a sidewall of the gate conductor layer.
摘要翻译：修复层形成方法包括以下步骤。首先，提供衬底，并且在衬底上形成栅极结构，其中栅极结构至少包括栅极介电层和栅极导体层。然后，进行氮化处理以在栅极结构的侧壁上形成含氮表面层。然后，进行热氧化处理以将含氮表层转化为修复层。此外，金属氧化物半导体晶体管包括基板，栅极电介质层，栅极导体层和修复层。栅极电介质层形成在基板上。栅极导体层形成在栅极电介质层上。修复层至少部分地形成在栅极导体层的侧壁上。

7. 发明申请

US20120329865A1 MOLECULES RELATED hERG ION CHANNELS AND THE USE THEREOF 审中-公开
标题翻译：分子相关通道及其用途
公开(公告)号：US20120329865A1
公开(公告)日：2012-12-27
申请号：US13519424
申请日：2010-12-16
申请人： Huayun Deng , Ye Fang , Ann MeeJin Ferrie , Mingqian He , Weijun Niu , Haiyan Sun , Elizabeth Tran , Ying Wei
发明人： Huayun Deng , Ye Fang , Ann MeeJin Ferrie , Mingqian He , Weijun Niu , Haiyan Sun , Elizabeth Tran , Ying Wei
IPC分类号： A61K31/341 , C12N5/071 , A61P35/00 , G01N21/17 , A61K31/343 , A61P35/02
CPC分类号： A61K31/341 , G01N33/6872 , G01N2500/10 , G01N2800/52
摘要： Disclosed are compounds having structural formula (I, II) or a pharmaceutically acceptable sale, solvate, clathrate, or prodrug thereof, wherein R1, R2, R3, R6, R5, and R4 are defined herein. These compounds can be useful as therapeutic agents for modulating hERG ion channels, and for improving prevention and treatment of hERG associated cardiac repolarization disorders.
摘要翻译：公开了具有结构式（I，II）或其药学上可接受的销售，溶剂合物，包合物或前药的化合物，其中R 1，R 2，R 3，R 6，R 5和R 4在本文中定义。这些化合物可用作调节hERG离子通道的治疗剂，以及改善预防和治疗hERG相关心脏复极化障碍。

8. 发明申请

US20120326162A1 PROCESS FOR FORMING REPAIR LAYER AND MOS TRANSISTOR HAVING REPAIR LAYER 有权
标题翻译：形成修复层的方法和具有维修层的MOS晶体管
公开(公告)号：US20120326162A1
公开(公告)日：2012-12-27
申请号：US13169129
申请日：2011-06-27
申请人： Chien-Liang LIN , Ying-Wei Yen , Yu-Ren Wang
发明人： Chien-Liang LIN , Ying-Wei Yen , Yu-Ren Wang
IPC分类号： H01L29/12 , H01L21/28 , H01L29/78 , B82Y30/00 , B82Y40/00
CPC分类号： H01L29/7834 , H01L21/28035 , H01L21/28247 , H01L29/165 , H01L29/6656 , H01L29/6659 , H01L29/66628 , H01L29/66636
摘要： A repair layer forming process includes the following steps. Firstly, a substrate is provided, and a gate structure is formed on the substrate, wherein the gate structure at least includes a gate dielectric layer and a gate conductor layer. Then, a nitridation process is performed to form a nitrogen-containing superficial layer on a sidewall of the gate structure. Then, a thermal oxidation process is performed to convert the nitrogen-containing superficial layer into a repair layer. Moreover, a metal-oxide-semiconductor transistor includes a substrate, a gate dielectric layer, a gate conductor layer and a repair layer. The gate dielectric layer is formed on the substrate. The gate conductor layer is formed on the gate dielectric layer. The repair layer is at least partially formed on a sidewall of the gate conductor layer.
摘要翻译：修复层形成方法包括以下步骤。首先，提供衬底，并且在衬底上形成栅极结构，其中栅极结构至少包括栅极介电层和栅极导体层。然后，进行氮化处理以在栅极结构的侧壁上形成含氮表面层。然后，进行热氧化处理以将含氮表层转化为修复层。此外，金属氧化物半导体晶体管包括基板，栅极电介质层，栅极导体层和修复层。栅极电介质层形成在基板上。栅极导体层形成在栅极电介质层上。修复层至少部分地形成在栅极导体层的侧壁上。

9. 发明授权

US08232605B2 Method for gate leakage reduction and Vt shift control and complementary metal-oxide-semiconductor device 有权
标题翻译：栅极泄漏减少和Vt偏移控制和互补金属氧化物半导体器件的方法
公开(公告)号：US08232605B2
公开(公告)日：2012-07-31
申请号：US12337541
申请日：2008-12-17
申请人： Chien-Liang Lin , Yu-Ren Wang , Wu-Chun Kao , Ying-Hsuan Li , Ying-Wei Yen , Shu-Yen Chan
发明人： Chien-Liang Lin , Yu-Ren Wang , Wu-Chun Kao , Ying-Hsuan Li , Ying-Wei Yen , Shu-Yen Chan
IPC分类号： H01L29/76
CPC分类号： H01L21/823807 , H01L21/823857
摘要： The present invention relates to a method for gate leakage reduction and Vt shift control, in which a first ion implantation is performed on PMOS region and NMOS region of a substrate to implant fluorine ions, carbon ions, or both in the gate dielectric or the semiconductor substrate, and a second ion implantation is performed only on the NMOS region of the substrate to implant fluorine ions, carbon ions, or both in the gate dielectric or the semiconductor substrate in the NMOS region, with the PMOS region being covered by a mask layer. Thus, the doping concentrations obtained by the PMOS region and the NMOS region are different to compensate the side effect caused by the different equivalent oxide thickness and to avoid the Vt shift.
摘要翻译：本发明涉及一种用于栅极泄漏减小和Vt移位控制的方法，其中在衬底的PMOS区域和NMOS区域上执行第一离子注入以在栅极电介质或半导体中注入氟离子，碳离子或两者衬底，并且仅在衬底的NMOS区域上执行第二离子注入，以在NMOS区域中的栅极电介质或半导体衬底中注入氟离子，碳离子或两者，其中PMOS区被掩模层覆盖。因此，由PMOS区域和NMOS区域获得的掺杂浓度不同，以补偿不同等效氧化物厚度引起的副作用并避免Vt偏移。

10. 发明申请

US20100129908A1 SPACED PROJECTION SUBSTRATES AND DEVICES FOR CELL CULTURE 审中-公开
标题翻译：间隔投影基质和细胞培养装置
公开(公告)号：US20100129908A1
公开(公告)日：2010-05-27
申请号：US12622079
申请日：2009-11-19
申请人： Ye Fang , Yi-Cheng Hsieh , Ling Huang , Ying Wei
发明人： Ye Fang , Yi-Cheng Hsieh , Ling Huang , Ying Wei
IPC分类号： C12N5/071
CPC分类号： C12N5/067 , C12M25/02 , C12N2502/13 , C12N2533/54
摘要： An article for culturing cells includes a substrate on which cells can be cultured. The substrate has a base surface. An array of projections extends from the base surface. The projections have a height of about 1 micrometer to about 100 micrometers, and have a gap distance along the major surface from center to center between neighboring projections of about 10 micrometers to 80 micrometers. A plurality of arrays of projections may extend from the surface with gaps in the base surface between the arrays. Hepatocytes cultures on such microprojection array substrates maintained in vivo like morphology and membrane polarity. Hepatocytes co-cultured with helper cells on such substrates tended to grow in the area of the arrays, while the helper cells tended to grow in the areas between the arrays.
摘要翻译：培养细胞的制品包括可以培养细胞的底物。基板具有基面。一组突起从基面延伸出来。突起具有约1微米至约100微米的高度，并且在约10微米至80微米的相邻突起之间具有从中心到中心的主表面的间隙距离。多个突起阵列可以从阵列之间的基部表面中的间隙从表面延伸。在这样的微喷射阵列基板上的肝细胞培养物保持体内，如形态和膜极性。与这种底物上的辅助细胞共培养的肝细胞趋向于在阵列区域中生长，而辅助细胞趋向于在阵列之间的区域中生长。

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