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1. 发明授权

US08604488B2 Light emitting diode and fabricating method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US08604488B2
公开(公告)日：2013-12-10
申请号：US13365217
申请日：2012-02-02
申请人： Yi-Keng Fu , Ren-Hao Jiang , Yen-Hsiang Fang , Bo-Chun Chen , Chia-Feng Lin
发明人： Yi-Keng Fu , Ren-Hao Jiang , Yen-Hsiang Fang , Bo-Chun Chen , Chia-Feng Lin
IPC分类号： H01L33/32
CPC分类号： H01L33/22 , H01L33/0075 , H01L33/0079
摘要： A light emitting diode including a GaN substrate, a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first electrode, and a second electrode is provided. The GaN substrate has a first surface and a second surface opposite thereto, and the second surface has a plurality of protuberances, the height of the protuberance is h μm and the distribution density of the protuberance on the second surface is d cm−2, wherein 9.87×107≦h2d, and h≦1.8. The first type semiconductor is disposed on the first surface of the GaN substrate. The light emitting layer is disposed on a partial region of the first semiconductor layer, and the wavelength of the light emitted by the light emitting layer is from 375 nm to 415 nm. The second semiconductor layer is disposed on the light emitting layer.
摘要翻译：提供了包括GaN衬底，第一类型半导体层，发光层，第二类型半导体层，第一电极和第二电极的发光二极管。 GaN衬底具有与其相对的第一表面和第二表面，并且第二表面具有多个突起，突起的高度为hmum，并且第二表面上的突起的分布密度为dcm-2，其中 9.87×107@h2d和h@1.8。第一类型半导体被布置在GaN衬底的第一表面上。发光层设置在第一半导体层的部分区域上，由发光层发射的光的波长为375nm〜415nm。第二半导体层设置在发光层上。

2. 发明授权

US08587017B2 Light emitting device and method of fabricating a light emitting device 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US08587017B2
公开(公告)日：2013-11-19
申请号：US13070486
申请日：2011-03-24
申请人： Wei-Hung Kuo , Yi-Keng Fu , Suh-Fang Lin , Rong Xuan
发明人： Wei-Hung Kuo , Yi-Keng Fu , Suh-Fang Lin , Rong Xuan
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/145 , H01L33/405 , H01L33/44
摘要： A light emitting device and a method of fabricating a light emitting device are provided. The light emitting device includes a carrier substrate, at least one epitaxy structure, a high resistant ring wall, a first electrode, and a second electrode. The epitaxy structure is disposed on the carrier substrate and includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence. The first semiconductor layer is relatively away from the carrier substrate and the second semiconductor layer is relatively close to the carrier substrate. The high resistant ring wall surrounds the epitaxy structure and a width of the high resistant ring wall is greater than 5 μm. The first electrode is disposed between the carrier substrate and the epitaxy structure. The second electrode is disposed at a side of the epitaxy structure away from the carrier substrate.
摘要翻译：提供发光器件和制造发光器件的方法。发光器件包括载体衬底，至少一个外延结构，高电阻环壁，第一电极和第二电极。外延结构设置在载体基板上，并且包括依次堆叠的第一半导体层，有源层和第二半导体层。第一半导体层相对离开载体衬底，并且第二半导体层相对靠近载体衬底。高阻环圈围绕外延结构，高阻环的宽度大于5um。第一电极设置在载体衬底和外延结构之间。第二电极设置在远离载体衬底的外延结构的一侧。

3. 发明申请

US20130228741A1 LIGHT EMITTING DIODE 审中-公开
标题翻译：发光二极管
公开(公告)号：US20130228741A1
公开(公告)日：2013-09-05
申请号：US13469070
申请日：2012-05-10
申请人： Yi-Keng Fu
发明人： Yi-Keng Fu
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/025 , H01L33/32 , H01L33/325
摘要： A light emitting diode including a sapphire substrate, a n-type semiconductor layer, an active layer, a p-type semiconductor layer, a first and a second electrode is provided. The n-type semiconductor layer is disposed on the sapphire substrate. The active layer has an active region with a defect density greater than or equal to 2×107/cm3. The active layer is disposed between the n-type and p-type semiconductor layers. The wavelength of light emitted by the active layer is λ, and 222 nm≦λ≦405 nm. The active layer includes i quantum barrier layers and (i−1) quantum wells, each quantum well is disposed between any two quantum barrier layers, and i≧2. N-type dopant is doped in at least k layers of the i quantum barrier layers, wherein k is a natural number and k≧1, when i even, k≧i/2, and when i is odd, k≧(i−1)/2.
摘要翻译：提供了包括蓝宝石衬底，n型半导体层，有源层，p型半导体层，第一和第二电极的发光二极管。 n型半导体层设置在蓝宝石衬底上。有源层具有大于或等于2×107 / cm3的缺陷密度的有源区。有源层设置在n型和p型半导体层之间。由有源层发射的光的波长为λ，波长为222nm @λ@ 405nm。有源层包括i量子势垒层和（i-1）量子阱，每个量子阱设置在任何两个量子势垒层之间，i> = 2。在i个量子势垒层的至少k个层中掺杂N型掺杂剂，其中k是自然数，k> = 1，当i even，k> = i / 2时，当i是奇数时，k> = （i-1）/ 2。

4. 发明申请

US20130112987A1 LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20130112987A1
公开(公告)日：2013-05-09
申请号：US13365217
申请日：2012-02-02
申请人： Yi-Keng Fu , Ren-Hao Jiang , Yen-Hsiang Fang , Bo-Chun Chen , Chia-Feng Lin
发明人： Yi-Keng Fu , Ren-Hao Jiang , Yen-Hsiang Fang , Bo-Chun Chen , Chia-Feng Lin
IPC分类号： H01L33/32
CPC分类号： H01L33/22 , H01L33/0075 , H01L33/0079
摘要： A light emitting diode including a GaN substrate, a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first electrode, and a second electrode is provided. The GaN substrate has a first surface and a second surface opposite thereto, and the second surface has a plurality of protuberances, the height of the protuberance is h μm and the distribution density of the protuberance on the second surface is d cm−2, wherein 9.87×107≦h2d, and h≦1.8. The first type semiconductor is disposed on the first surface of the GaN substrate. The light emitting layer is disposed on a partial region of the first semiconductor layer, and the wavelength of the light emitted by the light emitting layer is from 375 nm to 415 nm. The second semiconductor layer is disposed on the light emitting layer.
摘要翻译：提供了包括GaN衬底，第一类型半导体层，发光层，第二类型半导体层，第一电极和第二电极的发光二极管。 GaN衬底具有与其相对的第一表面和第二表面，并且第二表面具有多个突起，突起的高度为hmum，并且第二表面上的突起的分布密度为dcm-2，其中 9.87×107@h2d和h@1.8。第一类型半导体被布置在GaN衬底的第一表面上。发光层设置在第一半导体层的部分区域上，由发光层发射的光的波长为375nm〜415nm。第二半导体层设置在发光层上。

5. 发明申请

US20130270515A1 LIGHT EMITTING DIODE 审中-公开
标题翻译：发光二极管
公开(公告)号：US20130270515A1
公开(公告)日：2013-10-17
申请号：US13481966
申请日：2012-05-29
申请人： Yi-Keng Fu
发明人： Yi-Keng Fu
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/32
摘要： A light emitting diode includes a substrate, an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a first electrode, and a second electrode. The n-type semiconductor layer is located between the substrate and the p-type semiconductor layer. The active layer is located between the n-type semiconductor layer and the p-type semiconductor layer. The wavelength of light emitted by the active layer is λ, and 222 nm≦λ≦405 nm. The active layer includes i quantum barrier layers and (i−1) quantum wells, each quantum well is located between any two quantum barrier layers, and i is an integer greater than or equal to 2. The thickness of each of the quantum barrier layers counting from the p-type semiconductor layer is T1 to Ti, and T1 is greater than T2 and T3, or T1=T2>T3, or T1>T2>T3.
摘要翻译：发光二极管包括衬底，n型半导体层，p型半导体层，有源层，第一电极和第二电极。 n型半导体层位于基板和p型半导体层之间。有源层位于n型半导体层和p型半导体层之间。由有源层发射的光的波长为λ，波长为222nm @λ@ 405nm。有源层包括i量子势垒层和（i-1）量子阱，每个量子阱位于任何两个量子势垒层之间，i是大于或等于2的整数。每个量子势垒层的厚度从p型半导体层计数为T1〜Ti，T1大于T2和T3，T1 = T2> T3，T1> T2> T3。

6. 发明申请

US20110254044A1 LIGHT EMITTING DEVICE AND METHOD OF FABRICATING A LIGHT EMITTING DEVICE 有权
标题翻译：发光装置和制造发光装置的方法
公开(公告)号：US20110254044A1
公开(公告)日：2011-10-20
申请号：US13070486
申请日：2011-03-24
申请人： Wei-Hung Kuo , Yi-Keng Fu , Suh-Fang Lin , Rong Xuan
发明人： Wei-Hung Kuo , Yi-Keng Fu , Suh-Fang Lin , Rong Xuan
IPC分类号： H01L33/36
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/145 , H01L33/405 , H01L33/44
摘要： A light emitting device and a method of fabricating a light emitting device are provided. The light emitting device includes a carrier substrate, at least one epitaxy structure, a high resistant ring wall, a first electrode, and a second electrode. The epitaxy structure is disposed on the carrier substrate and includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence. The first semiconductor layer is relatively away from the carrier substrate and the second semiconductor layer is relatively close to the carrier substrate. The high resistant ring wall surrounds the epitaxy structure and a width of the high resistant ring wall is greater than 5 μm. The first electrode is disposed between the carrier substrate and the epitaxy structure. The second electrode is disposed at a side of the epitaxy structure away from the carrier substrate.
摘要翻译：提供发光器件和制造发光器件的方法。发光器件包括载体衬底，至少一个外延结构，高电阻环壁，第一电极和第二电极。外延结构设置在载体基板上，并且包括依次堆叠的第一半导体层，有源层和第二半导体层。第一半导体层相对离开载体衬底，并且第二半导体层相对靠近载体衬底。高阻环圈围绕外延结构，高阻环壁的宽度大于5μm。第一电极设置在载体衬底和外延结构之间。第二电极设置在远离载体衬底的外延结构的一侧。

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