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1. 发明申请

US20130112987A1 LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20130112987A1
公开(公告)日：2013-05-09
申请号：US13365217
申请日：2012-02-02
申请人： Yi-Keng Fu , Ren-Hao Jiang , Yen-Hsiang Fang , Bo-Chun Chen , Chia-Feng Lin
发明人： Yi-Keng Fu , Ren-Hao Jiang , Yen-Hsiang Fang , Bo-Chun Chen , Chia-Feng Lin
IPC分类号： H01L33/32
CPC分类号： H01L33/22 , H01L33/0075 , H01L33/0079
摘要： A light emitting diode including a GaN substrate, a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first electrode, and a second electrode is provided. The GaN substrate has a first surface and a second surface opposite thereto, and the second surface has a plurality of protuberances, the height of the protuberance is h μm and the distribution density of the protuberance on the second surface is d cm−2, wherein 9.87×107≦h2d, and h≦1.8. The first type semiconductor is disposed on the first surface of the GaN substrate. The light emitting layer is disposed on a partial region of the first semiconductor layer, and the wavelength of the light emitted by the light emitting layer is from 375 nm to 415 nm. The second semiconductor layer is disposed on the light emitting layer.
摘要翻译：提供了包括GaN衬底，第一类型半导体层，发光层，第二类型半导体层，第一电极和第二电极的发光二极管。 GaN衬底具有与其相对的第一表面和第二表面，并且第二表面具有多个突起，突起的高度为hmum，并且第二表面上的突起的分布密度为dcm-2，其中 9.87×107@h2d和h@1.8。第一类型半导体被布置在GaN衬底的第一表面上。发光层设置在第一半导体层的部分区域上，由发光层发射的光的波长为375nm〜415nm。第二半导体层设置在发光层上。

2. 发明申请

US20120161099A1 NITIRDE SEMICONDUCTOR LIGHT EMITTING DIODE 有权
标题翻译： NITIRDE半导体发光二极管
公开(公告)号：US20120161099A1
公开(公告)日：2012-06-28
申请号：US12979274
申请日：2010-12-27
申请人： Ren-Hao Jiang , Chih-Wei Hu
发明人： Ren-Hao Jiang , Chih-Wei Hu
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/12 , H01L33/32
摘要： A nitride semiconductor LED device including an N-type doped layer, an active layer and a P-type doped layer is provided. The active layer is disposed on the N-type doped layer and includes at least one quantum well structure. The quantum well structure includes two quantum barrier layers and a quantum well sandwiched between the quantum barrier layers. The quantum barrier layer is a super-lattice structure including a quaternary nitride semiconductor. The P-type doped layer is disposed on the active layer.
摘要翻译：提供了包括N型掺杂层，有源层和P型掺杂层的氮化物半导体LED器件。有源层设置在N型掺杂层上并且包括至少一个量子阱结构。量子阱结构包括两个量子势垒层和夹在量子势垒层之间的量子阱。量子势垒层是包括四元氮化物半导体的超晶格结构。 P型掺杂层设置在有源层上。

3. 发明申请

US20120085987A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20120085987A1
公开(公告)日：2012-04-12
申请号：US12902162
申请日：2010-10-12
申请人： Rong Xuan , Po-Chun Liu , Ren-Hao Jiang
发明人： Rong Xuan , Po-Chun Liu , Ren-Hao Jiang
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/32
摘要： A light emitting device is provided, which includes a light-emitting structure having an active layer and a magnetic material. The active layer includes at least one quantum well structure, and a thickness of at least one of the quantum well structure is greater than or substantially equal to 1.2 nm at room temperature. The magnetic material is coupled with the light-emitting structure to produce a magnetic field perpendicular to a surface of the active layer in the light-emitting structure.
摘要翻译：提供一种发光器件，其包括具有有源层和磁性材料的发光结构。有源层包括至少一个量子阱结构，并且在室温下至少一个量子阱结构的厚度大于或基本上等于1.2nm。磁性材料与发光结构耦合以产生垂直于发光结构中有源层表面的磁场。

4. 发明授权

US08604488B2 Light emitting diode and fabricating method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US08604488B2
公开(公告)日：2013-12-10
申请号：US13365217
申请日：2012-02-02
申请人： Yi-Keng Fu , Ren-Hao Jiang , Yen-Hsiang Fang , Bo-Chun Chen , Chia-Feng Lin
发明人： Yi-Keng Fu , Ren-Hao Jiang , Yen-Hsiang Fang , Bo-Chun Chen , Chia-Feng Lin
IPC分类号： H01L33/32
CPC分类号： H01L33/22 , H01L33/0075 , H01L33/0079
摘要： A light emitting diode including a GaN substrate, a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first electrode, and a second electrode is provided. The GaN substrate has a first surface and a second surface opposite thereto, and the second surface has a plurality of protuberances, the height of the protuberance is h μm and the distribution density of the protuberance on the second surface is d cm−2, wherein 9.87×107≦h2d, and h≦1.8. The first type semiconductor is disposed on the first surface of the GaN substrate. The light emitting layer is disposed on a partial region of the first semiconductor layer, and the wavelength of the light emitted by the light emitting layer is from 375 nm to 415 nm. The second semiconductor layer is disposed on the light emitting layer.
摘要翻译：提供了包括GaN衬底，第一类型半导体层，发光层，第二类型半导体层，第一电极和第二电极的发光二极管。 GaN衬底具有与其相对的第一表面和第二表面，并且第二表面具有多个突起，突起的高度为hmum，并且第二表面上的突起的分布密度为dcm-2，其中 9.87×107@h2d和h@1.8。第一类型半导体被布置在GaN衬底的第一表面上。发光层设置在第一半导体层的部分区域上，由发光层发射的光的波长为375nm〜415nm。第二半导体层设置在发光层上。

5. 发明授权

US08362458B2 Nitirde semiconductor light emitting diode 有权
标题翻译： Nitirde半导体发光二极管
公开(公告)号：US08362458B2
公开(公告)日：2013-01-29
申请号：US12979274
申请日：2010-12-27
申请人： Ren-Hao Jiang , Chih-Wei Hu
发明人： Ren-Hao Jiang , Chih-Wei Hu
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/12 , H01L33/32
摘要： A nitride semiconductor LED device including an N-type doped layer, an active layer and a P-type doped layer is provided. The active layer is disposed on the N-type doped layer and includes at least one quantum well structure. The quantum well structure includes two quantum barrier layers and a quantum well sandwiched between the quantum barrier layers. The quantum barrier layer is a super-lattice structure including a quaternary nitride semiconductor. The P-type doped layer is disposed on the active layer.
摘要翻译：提供了包括N型掺杂层，有源层和P型掺杂层的氮化物半导体LED器件。有源层设置在N型掺杂层上并且包括至少一个量子阱结构。量子阱结构包括两个量子势垒层和夹在量子势垒层之间的量子阱。量子势垒层是包括四元氮化物半导体的超晶格结构。 P型掺杂层设置在有源层上。

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