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1. 发明申请

US20070085109A1 Single element optical sensor 审中-公开
标题翻译：单元件光学传感器
公开(公告)号：US20070085109A1
公开(公告)日：2007-04-19
申请号：US11249459
申请日：2005-10-14
申请人： Yung-Jane Hsu , Yeu-Long Jiang
发明人： Yung-Jane Hsu , Yeu-Long Jiang
IPC分类号： H01L27/148
CPC分类号： H01L31/101 , H01L27/14645 , H01L31/0352
摘要： The single element optical sensor of this invention is a two-terminal element and comprises a light absorbing semiconductor layer, potential barrier materials positioned in said light absorbing layer and two electrodes connected to said light absorbing layer. Positions and chemical compositions of the potential barriers are adjusted according to wavebands of interests. Under different bias conditions photoelectric voltages with separated peaks are generated by the invented optical sensor, whereby color elements of an image may be obtained. Distinguish of light waves of selected wavebands may thus be achieved.
摘要翻译：本发明的单元件光传感器是两端元件，它包括光吸收半导体层，位于所述光吸收层中的势垒材料和连接到所述光吸收层的两个电极。势垒的位置和化学成分根据兴趣的波段进行调整。在不同的偏置条件下，由本发明的光学传感器产生具有分离峰值的光电压，由此可以获得图像的色彩元素。因此可以实现区分所选波段的光波。

2. 发明授权

US06680478B2 Fabrication of amorphous silicon/amorphous silicon germanium NI1PI2N infrared position detectors 有权
标题翻译：非晶硅/非晶硅锗NI1PI2N红外位置检测器的制造
公开(公告)号：US06680478B2
公开(公告)日：2004-01-20
申请号：US10021011
申请日：2001-12-19
申请人： Huey-Liang Hwang , Yeu-Long Jiang , Klaus Yung-Jane Hsu , Cho-Jen Tsai
发明人： Huey-Liang Hwang , Yeu-Long Jiang , Klaus Yung-Jane Hsu , Cho-Jen Tsai
IPC分类号： G01J520
CPC分类号： H01L31/1055 , H01L31/11
摘要： Amorphous silicon/amorphous silicon germanium NI1PI2N position detectors are fabricated to suppress visible light and increase detection of infrared light. The material of I1 layer is amorphous silicon or amorphous silicon germanium used to absorb visible light, and material of I2 layer is amorphous silicon germanium or amorphous germanium used to absorb infrared light. A suppression of signal due to the absorption of the visible light and amplification of signals due to absorption of the infrared light can be obtained when the NI1P diode is forward biased and the P12N diode is reverse biased. The optical band gap of the I1 and I2 layers can be controlled by the Si/Ge atomic ratio. The suppression of visible light and enhanced detection of infrared light may be tuned by controlling thickness and optical band gaps of the I1 and I2 layers. The amorphous silicon and amorphous silicon germanium layers may be deposited by square-wave modulation at 13.56 MHz.
摘要翻译：制造非晶硅/非晶硅锗NI1PI2N位置检测器以抑制可见光并增加红外光的检测。 I1层的材料是用于吸收可见光的非晶硅或非晶硅锗，I2层的材料是用于吸收红外光的非晶硅锗或无定形锗。当NI1P二极管正向偏置且P12N二极管反向偏置时，可以获得由于吸收可见光而导致的信号抑制和由于吸收红外光而引起的信号放大。可以通过Si / Ge原子比来控制I1和I2层的光学带隙。可以通过控制I1和I2层的厚度和光学带隙来调节对可见光的抑制和红外光的增强检测。可以通过13.56MHz的方波调制沉积非晶硅和非晶硅锗层。

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