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1. 发明申请

US20130125091A1 AUTOMATIC PROGRAM GENERATION DEVICE AND AUTOMATIC PROGRAM GENERATION METHOD 有权
标题翻译：自动程序生成装置及自动程序生成方法
公开(公告)号：US20130125091A1
公开(公告)日：2013-05-16
申请号：US13607087
申请日：2012-09-07
申请人： Yasunori Hashimoto , Ryota Mibe , Shuhei Nojiri , Sadahiro Ishikawa , Kiyoshi Yamaguchi , Kentaro Yoshimura
发明人： Yasunori Hashimoto , Ryota Mibe , Shuhei Nojiri , Sadahiro Ishikawa , Kiyoshi Yamaguchi , Kentaro Yoshimura
IPC分类号： G06F9/44
CPC分类号： G06F8/30 , G06F8/36
摘要： A device and method automatically generate a program for buffering differences based on characteristics of a component. A buffer program for buffering differences of the way to use a component during different software environments is automatically generated. The device includes a controller for executing automatic generation of the buffer program, a memory including control information and a processing program, an input device for inputting the processing content of the component, and an output device for outputting the automatically generated buffer program. The memory records a plurality of forms for buffering the component as the control information and the controller extracts characteristic information based on the processing content of the component and records the extracted characteristic information as control information in the memory, selects a specified form based on the characteristic information, and generates the buffer program based on the selected form and the characteristic information.
摘要翻译：设备和方法基于组件的特性自动生成用于缓冲差异的程序。自动生成用于缓冲在不同软件环境中使用组件的方式差异的缓冲程序。该装置包括用于执行缓冲器程序的自动生成的控制器，包括控制信息和处理程序的存储器，用于输入部件的处理内容的输入装置，以及用于输出自动生成的缓冲器程序的输出装置。存储器记录用于缓存部件的多个形式作为控制信息，并且控制器基于部件的处理内容提取特征信息，并将所提取的特征信息作为控制信息记录在存储器中，基于特性选择指定的形式信息，并且基于所选择的形式和特征信息生成缓冲器程序。

2. 发明申请

US20080100348A1 Semiconductor Device 有权
标题翻译：半导体器件
公开(公告)号：US20080100348A1
公开(公告)日：2008-05-01
申请号：US11792471
申请日：2006-09-21
申请人： Kimihiko Yamashita , Yasunori Hashimoto
发明人： Kimihiko Yamashita , Yasunori Hashimoto
IPC分类号： G01R19/00 , H01L29/00
CPC分类号： H01L27/016 , H01L23/5228 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device, includes a lower layer side insulation film; a wiring pattern formed on the lower layer side insulation film; a base insulation film formed on the lower layer side insulation film and the wiring pattern; and a plurality of metal thin film resistance elements formed on the base insulation film; wherein a connection hole is formed in the base insulation film on the wiring pattern; the wiring pattern and the metal thin film resistance element are electrically connected in the connection hole; the metal thin film resistance element has a belt shape part arranged separately from the connection hole and a connection part continuously formed with the belt shape part and connected to the wiring pattern in the connection hole; and the connection parts of at least two of the metal thin film resistance element are formed in the single connection hole with a gap in between said connection parts.
摘要翻译：一种半导体器件，包括下层侧绝缘膜; 形成在下层侧绝缘膜上的布线图案; 形成在下层侧绝缘膜和布线图案上的基底绝缘膜; 以及形成在所述基底绝缘膜上的多个金属薄膜电阻元件; 其中在所述布线图案上的所述基底绝缘膜中形成连接孔; 布线图案和金属薄膜电阻元件在连接孔中电连接; 金属薄膜电阻元件具有与连接孔分开布置的带状部分和连续形成带状部分并且连接到连接孔中的布线图案的连接部分; 并且金属薄膜电阻元件中的至少两个的连接部分形成在单个连接孔中，在所述连接部分之间具有间隙。

3. 发明授权

US07312515B2 Semiconductor apparatus including a thin-metal-film resistor element and a method of manufacturing the same 有权
标题翻译：包括薄金属膜电阻元件的半导体装置及其制造方法
公开(公告)号：US07312515B2
公开(公告)日：2007-12-25
申请号：US10861931
申请日：2004-06-07
申请人： Kimihiko Yamashita , Yasunori Hashimoto
发明人： Kimihiko Yamashita , Yasunori Hashimoto
IPC分类号： H01L29/72
CPC分类号： H01C17/075 , H01C7/006 , H01L23/5228 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor apparatus includes a wiring pattern, an insulating film, and a thin-metal-film resistor element. The insulating film is formed on the wiring pattern having connection holes vertically penetrating there-through to expose part of the wiring pattern at bottom regions of the connection holes. The connection holes are arranged with a space there-between. The thin-metal-film resistor element is formed on the insulating film and extending to continuously overlay and contact surfaces of the insulating film, inner walls of the connection holes, and the wiring pattern at the bottom regions of the connection holes.
摘要翻译：半导体装置包括布线图案，绝缘膜和薄金属膜电阻元件。绝缘膜形成在具有垂直贯穿其中的连接孔的布线图案上，以暴露连接孔的底部区域的布线图案的一部分。连接孔之间具有空间。金属薄膜电阻元件形成在绝缘膜上并延伸到绝缘膜，连接孔的内壁和连接孔的底部区域的布线图案的连续覆盖和接触。

4. 发明授权

US06407824B1 Image processing and outputting with suspension of processing in a white region 失效
标题翻译：图像处理和输出，在白色区域停止处理
公开(公告)号：US06407824B1
公开(公告)日：2002-06-18
申请号：US08897547
申请日：1997-07-21
申请人： Yasunori Hashimoto
发明人： Yasunori Hashimoto
IPC分类号： G06K1500
CPC分类号： G06K15/00 , G06K15/1822
摘要： In a color image processing apparatus including a printer unit for printing out image data, it is checked whether the image represented by image data to be processed includes a white region, and image processing is performed while processing to be executed is changed in accordance with the determination result. Upon printing, the printer unit prints out the image data while skipping a region determined as a white region.
摘要翻译：在包括用于打印图像数据的打印机单元的彩色图像处理设备中，检查由要处理的图像数据表示的图像是否包括白色区域，并且在执行处理期间执行图像处理，根据确定结果。在打印时，打印机单元在跳过确定为白色区域的区域时打印图像数据。

5. 发明授权

US5245444A Image reproduction using error diffusion or dither matrix 失效
标题翻译：使用错误扩展或数字矩阵进行图像生成
公开(公告)号：US5245444A
公开(公告)日：1993-09-14
申请号：US673122
申请日：1991-03-20
申请人： Yasunori Hashimoto
发明人： Yasunori Hashimoto
IPC分类号： H04N1/405 , H04N1/41
CPC分类号： H04N1/4105 , H04N1/405
摘要： Multivalued data enters and is converted into binary (two-valued) data in accordance with plural types of binary-conversion methods. Among the plural types of data obtained by such binary conversion, one is adopted as the object of coding and is coded. The object of coding to be stored in a memory is decided based upon the quantity of coded data.

6. 发明申请

US20120266131A1 AUTOMATIC PROGRAM GENERATION DEVICE, METHOD, AND COMPUTER PROGRAM 审中-公开
标题翻译：自动程序生成装置，方法和计算机程序
公开(公告)号：US20120266131A1
公开(公告)日：2012-10-18
申请号：US13368717
申请日：2012-02-08
申请人： Shuhei Nojiri , Ryota Mibe , Yasunori Hashimoto , Sadahiro Ishikawa , Kiyoshi Yamaguchi
发明人： Shuhei Nojiri , Ryota Mibe , Yasunori Hashimoto , Sadahiro Ishikawa , Kiyoshi Yamaguchi
IPC分类号： G06F9/44
CPC分类号： G06F8/38 , G06F8/30
摘要： The present invention is provided to apply a screen mockup developed for prototyping, without any modification, to actual product development for which the architecture differs. An automatic program generation device has: a storage part 170 for storing a screen mockup program 1720, a component setup file 1730, and execution architecture definition information 1760, a storage part 160 for storing component data, a mockup design information analysis part 110 for generating component design information from the screen mockup program 1720 and the component setup file 1730 and configuring a program execution infrastructure from the execution architecture definition information 1760, a component architecture decision part 130 for selecting on the basis of the component design information a program code fragment, which operates on the configured program execution infrastructure, and a program code generation part 140 for generating a program code from the selected program code fragment.
摘要翻译：提供本发明用于将开发用于原型开发的屏幕模型应用于实际的产品开发，而不需要任何修改。自动程序生成装置具有：用于存储画面模拟程序1720的存储部分170，组件设置文件1730和执行体系结构定义信息1760，用于存储组件数据的存储部分160，用于生成组件数据的模型设计信息分析部件110 来自屏幕样机程序1720和组件设置文件1730的组件设计信息和从执行架构定义信息1760配置程序执行基础设施，组件架构判定部分130，用于基于组件设计信息选择程序代码片段，其在配置的程序执行基础设施上运行，以及用于从所选择的程序代码片段生成程序代码的程序代码生成部分140。

7. 发明申请

US20080090371A1 Semiconductor apparatus including a thin-metal-film resistor element and a method of manufacturing the same 有权
标题翻译：包括薄金属膜电阻元件的半导体装置及其制造方法
公开(公告)号：US20080090371A1
公开(公告)日：2008-04-17
申请号：US11984167
申请日：2007-11-14
申请人： Kimihiko Yamashita , Yasunori Hashimoto
发明人： Kimihiko Yamashita , Yasunori Hashimoto
IPC分类号： H01L21/20
CPC分类号： H01C17/075 , H01C7/006 , H01L23/5228 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor apparatus includes a wiring pattern, an insulating film, and a thin-metal-film resistor element. The insulating film is formed on the wiring pattern having connection holes vertically penetrating there-through to expose part of the wiring pattern at bottom regions of the connection holes. The connection holes are arranged with a space there-between. The thin-metal-film resistor element is formed on the insulating film and extending to continuously overlay and contact surfaces of the insulating film, inner walls of the connection holes, and the wiring pattern at the bottom regions of the connection holes.
摘要翻译：半导体装置包括布线图案，绝缘膜和薄金属膜电阻元件。绝缘膜形成在具有垂直贯穿其中的连接孔的布线图案上，以暴露连接孔的底部区域的布线图案的一部分。连接孔之间具有空间。金属薄膜电阻元件形成在绝缘膜上并延伸到绝缘膜，连接孔的内壁和连接孔的底部区域的布线图案的连续覆盖和接触。

8. 发明授权

US5867563A Location display apparatus 失效
标题翻译：位置显示装置
公开(公告)号：US5867563A
公开(公告)日：1999-02-02
申请号：US573538
申请日：1995-12-15
申请人： Masami Kato , Kentaro Matsumoto , Tsunehiro Makino , Yasunori Hashimoto , Hiroyuki Nakanishi , Yasuyuki Nakamura , Atsushi Takahashi
发明人： Masami Kato , Kentaro Matsumoto , Tsunehiro Makino , Yasunori Hashimoto , Hiroyuki Nakanishi , Yasuyuki Nakamura , Atsushi Takahashi
IPC分类号： H04M3/22
CPC分类号： H04M3/22
摘要： A location display apparatus has a display section for displaying a location and voice-synthesizes the location in response to a DTMF signal received from a circuit so as to transmit a corresponding message to the circuit. Moreover, in accordance with received DTMF signals, a power source of the apparatus is controlled, the message is transferred, and the displayed location is changed.
摘要翻译：位置显示装置具有显示部分，用于响应于从电路接收到的DTMF信号显示位置并对位置进行语音合成，以便将相应的消息发送到电路。此外，根据收到的DTMF信号，控制装置的电源，传送消息，改变显示位置。

9. 发明授权

US07718502B2 Semiconductor apparatus including a thin-metal-film resistor element and a method of manufacturing the same 有权
标题翻译：包括薄金属膜电阻元件的半导体装置及其制造方法
公开(公告)号：US07718502B2
公开(公告)日：2010-05-18
申请号：US11984167
申请日：2007-11-14
申请人： Kimihiko Yamashita , Yasunori Hashimoto
发明人： Kimihiko Yamashita , Yasunori Hashimoto
IPC分类号： H01L29/72
CPC分类号： H01C17/075 , H01C7/006 , H01L23/5228 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor apparatus includes a wiring pattern, an insulating film, and a thin-metal-film resistor element. The insulating film is formed on the wiring pattern having connection holes vertically penetrating there-through to expose part of the wiring pattern at bottom regions of the connection holes. The connection holes are arranged with a space there-between. The thin-metal-film resistor element is formed on the insulating film and extending to continuously overlay and contact surfaces of the insulating film, inner walls of the connection holes, and the wiring pattern at the bottom regions of the connection holes.
摘要翻译：半导体装置包括布线图案，绝缘膜和薄金属膜电阻元件。绝缘膜形成在具有垂直贯穿其中的连接孔的布线图案上，以暴露连接孔的底部区域的布线图案的一部分。连接孔之间具有空间。金属薄膜电阻元件形成在绝缘膜上并延伸到绝缘膜，连接孔的内壁和连接孔的底部区域的布线图案的连续覆盖和接触。

10. 发明申请

US20060027892A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20060027892A1
公开(公告)日：2006-02-09
申请号：US11060753
申请日：2005-08-16
申请人： Kimihiko Yamashita , Yasunori Hashimoto
发明人： Kimihiko Yamashita , Yasunori Hashimoto
IPC分类号： H01L29/00
CPC分类号： H01L23/5228 , H01L21/76805 , H01L21/76843 , H01L27/0802 , H01L28/24 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device equipped with a metal thin film resistor is disclosed. The semiconductor device includes a second interlayer insulating film formed on a first interlayer insulating film including a formation area of a wiring pattern. Connecting holes are formed in the second interlayer insulating film corresponding to both ends of the metal thin film resistor and the wiring pattern. An upper part of each connecting hole is formed in a taper shape. A sidewall is formed on the inner wall of each connecting hole. The metal thin film resistor is formed on the second interlayer insulating film between the connecting holes, inside of each connecting hole, and on the wiring pattern.
摘要翻译：公开了一种配备有金属薄膜电阻器的半导体器件。半导体器件包括形成在包括布线图案的形成区域的第一层间绝缘膜上的第二层间绝缘膜。在与金属薄膜电阻器的两端对应的第二层间绝缘膜和布线图案中形成连接孔。每个连接孔的上部形成为锥形。在每个连接孔的内壁上形成侧壁。金属薄膜电阻器形成在第二层间绝缘膜之间的连接孔之间，每个连接孔内部和布线图案之间。

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