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1. 发明授权

US06376295B1 Method for manufacturing a semiconductor memory device with a fine structure 失效
标题翻译：具有精细结构的半导体存储器件的制造方法
公开(公告)号：US06376295B1
公开(公告)日：2002-04-23
申请号：US09631977
申请日：2000-08-03
申请人： Kiyomi Naruke , Minoru Kurata , Yuuichi Tatsumi , Yasumasa Sawada
发明人： Kiyomi Naruke , Minoru Kurata , Yuuichi Tatsumi , Yasumasa Sawada
IPC分类号： H01L218238
CPC分类号： H01L27/11568 , G11C16/0491 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11546
摘要： There is disclosed a memory cell which has a diffusion layers constituting source/drain areas formed on a p-type silicon substrate surface, and a channel area formed between the diffusion layers. Above the channel area, an insulating film of a laminated structure is formed of a silicon oxide film, a silicon nitride film and a silicon oxide film. A gate electrode is formed on the upper surface of the insulating film of the laminated structure. The gate electrode is used as a word line. Moreover, an interlayer insulating film is formed between the diffusion layer and the gate electrode. By injecting hot electrons from the substrate to the silicon nitride film in the insulating film of the laminated structure, data is written. The silicon nitride film and the diffusion layer are partially overlapped in a vertical direction, and an offset portion is disposed between the silicon nitride film and the diffusion layer.
摘要翻译：公开了一种存储单元，其具有构成在p型硅衬底表面上形成的源/漏区的扩散层和形成在扩散层之间的沟道区。在通道区域之上，层叠结构的绝缘膜由氧化硅膜，氮化硅膜和氧化硅膜形成。在层叠结构体的绝缘膜的上表面上形成栅电极。栅电极用作字线。此外，在扩散层和栅电极之间形成层间绝缘膜。通过将层叠结构的绝缘膜中的热电子从基板注入氮化硅膜，写入数据。氮化硅膜和扩散层在垂直方向上部分重叠，偏移部分设置在氮化硅膜和扩散层之间。

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