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    • 1. 发明申请
    • SIMULATION METHOD FOR TRANSISTOR UNSUITABLE FOR EXISTING MODEL
    • 用于现有模型的晶体管的仿真方法
    • US20100114543A1
    • 2010-05-06
    • US12608551
    • 2009-10-29
    • Yasuhiro NAMBAPeter Lee
    • Yasuhiro NAMBAPeter Lee
    • G06G7/48
    • G06F17/5036
    • A simulation method includes determining a relationship between stress time and a degradation rate of drain current on a basis of a table in which data of a lifetime of a transistor, or the degradation rate of the transistor, is written, and calculating an amount of change in drain current accordance with the degradation rate, using a table in which information indicating a change in the drain current, being dependent on voltage, is written, based on actually measured data of drain current of the transistor after degradation, drain current in an initial state of a particular transistor model, and the relationship between stress time and the degradation rate of drain current.
    • 模拟方法包括基于其中写入晶体管的寿命数据或晶体管的劣化速率的数据的表来确定应力时间和漏极电流的劣化率之间的关系,并计算变化量 在根据劣化率的漏极电流中,使用其中写入表示依赖于电压的漏极电流的变化的信息的表,基于在劣化后晶体管的漏极电流的实际测量数据,初始的漏极电流 特定晶体管模型的状态,以及应力时间与漏极电流的劣化率之间的关系。
    • 4. 发明授权
    • Simulation method for transistor unsuitable for existing model
    • 晶体管的仿真方法不适合现有的模型
    • US08285524B2
    • 2012-10-09
    • US12608551
    • 2009-10-29
    • Yasuhiro NambaPeter Lee
    • Yasuhiro NambaPeter Lee
    • G06F17/50
    • G06F17/5036
    • A simulation method includes determining a relationship between stress time and a degradation rate of drain current on a basis of a table in which data of a lifetime of a transistor, or the degradation rate of the transistor, is written, and calculating an amount of change in drain current accordance with the degradation rate, using a table in which information indicating a change in the drain current, being dependent on voltage, is written, based on actually measured data of drain current of the transistor after degradation, drain current in an initial state of a particular transistor model, and the relationship between stress time and the degradation rate of drain current.
    • 模拟方法包括基于其中写入晶体管的寿命数据或晶体管的劣化速率的数据的表来确定应力时间和漏极电流的劣化率之间的关系,并计算变化量 在根据劣化率的漏极电流中,使用其中写入表示依赖于电压的漏极电流的变化的信息的表,基于在劣化后晶体管的漏极电流的实际测量数据,初始的漏极电流 特定晶体管模型的状态,以及应力时间与漏极电流的劣化率之间的关系。
    • 6. 发明授权
    • Focus detecting device
    • 对焦检测装置
    • US4415246A
    • 1983-11-15
    • US387201
    • 1982-06-10
    • Toshihiko KarasakiTakayuki GotohYasuhiro NambaEiji Yamakawa
    • Toshihiko KarasakiTakayuki GotohYasuhiro NambaEiji Yamakawa
    • G02B7/36G02B7/34G03B3/10G01J1/44
    • G02B7/34
    • The disclosure relates to a focus detecting device for detecting a focusing condition of an objective lens on a focal plane by the detection of contrast of an image formed by the objective lens. The device includes an elongated biconcave cylindrical lens for forming a line image, a glass plate positioned parallelly to the cylindrical lens, and a plurality of photodiodes deposited on the opposite flat surfaces of the glass plate in arrays parallel to the axial direction of the elongated cylindrical lens such that the photodiode arrays on the opposite flat surfaces are disposed alternately in an interlaid manner. When the line image formed on the photodiodes deposited on one surface of the glass plate is front-focus condition and the line image formed on the photodiodes deposited on the other surface of the glass plate is rear-focus condition, a detector indicates that the line image formed on a plane between the opposite flat surfaces is in-focus condition.
    • 本发明涉及一种用于通过检测由物镜形成的图像的对比度来检测物镜在焦平面上的聚焦状态的焦点检测装置。 该装置包括用于形成线图像的细长双凹圆柱形透镜,平行于柱面透镜定位的玻璃板,以及平行于细长圆柱体的轴向方向沉积在玻璃板的相对平坦表面上的多个光电二极管 透镜,使得相对的平坦表面上的光电二极管阵列以交错的方式交替布置。 当沉积在玻璃板的一个表面上的光电二极管上形成的线图像是前焦点状态,并且在沉积在玻璃板的另一个表面上的光电二极管上形成的线图像是后焦点状态时,检测器指示线 在相对的平坦表面之间的平面上形成的图像是对焦状态。