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    • 2. 发明授权
    • Infrared solid-state image pickup apparatus and a production method thereof
    • 红外固体摄像装置及其制造方法
    • US07598584B2
    • 2009-10-06
    • US11330259
    • 2006-01-12
    • Yasuaki OhtaMasashi Ueno
    • Yasuaki OhtaMasashi Ueno
    • H01L31/058
    • H01L31/103G01J5/20H01L27/14649
    • An infrared solid-state image pickup apparatus includes an SOI substrate having a silicon oxide film layer and an SOI layer on a silicon substrate, a detecting portion which is provided with a PN junction diode formed on the SOI substrate and converts a temperature change generated by an incident infrared ray to an electric signal, and a support that holds the detecting portion with a space from the silicon substrate of the SOI substrate. An impurity in a semiconductor layer constituting the PN junction diode is distributed such that carriers flowing in the semiconductor layer are distributed in such an uneven manner as being much in a central portion of the semiconductor layer than in a peripheral portion thereof.
    • 一种红外固体摄像装置,包括在硅衬底上具有氧化硅膜层和SOI层的SOI衬底,检测部分设置有形成在SOI衬底上的PN结二极管,并将由 对电信号的入射红外线,以及支撑体,其保持检测部分与SOI衬底的硅衬底具有空间。 构成PN结二极管的半导体层中的杂质被分布,使得在半导体层中流动的载流子以如在半导体层的中心部分大于其周边部分的大致不均匀的方式分布。