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1. 发明授权

US08349627B2 Method for fabricating a light emitting diode package structure 有权
标题翻译：制造发光二极管封装结构的方法
公开(公告)号：US08349627B2
公开(公告)日：2013-01-08
申请号：US12976977
申请日：2010-12-22
申请人： Yao-Jun Tsai , Chen-Peng Hsu , Chao-Wei Li , Hung-Lieh Hu
发明人： Yao-Jun Tsai , Chen-Peng Hsu , Chao-Wei Li , Hung-Lieh Hu
IPC分类号： H01L33/48
CPC分类号： H01L33/486 , H01L33/60 , H01L33/62 , H01L33/641 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： The present invention discloses a method for fabricating a light emitting diode (LED) package structure. The method comprises the following steps: a carrier having a substrate and a first protrusion is provided, wherein the first protrusion is disposed on the substrate and has a recess. An adhesion layer and a LED chip are disposed on a bottom of the recess, wherein the adhesion layer is bonded between the carrier and the LED chip, and a ratio between a width of the recess and a width of the LED chip is larger than 1 and smaller than or equal to 1.5 such that a gap existing between a sidewall of the LED chip and an inner sidewall of the recess.
摘要翻译：本发明公开了一种制造发光二极管（LED）封装结构的方法。该方法包括以下步骤：提供具有基板和第一突起的载体，其中第一突起设置在基板上并具有凹部。粘合层和LED芯片设置在凹部的底部，其中粘合层结合在载体和LED芯片之间，并且凹部的宽度与LED芯片的宽度之间的比率大于1 并且小于或等于1.5，使得在LED芯片的侧壁和凹部的内侧壁之间存在间隙。

2. 发明申请

US20120199862A1 LIGHT EMITTING DIODE PACKAGE STRUCTURE 有权
标题翻译：发光二极管封装结构
公开(公告)号：US20120199862A1
公开(公告)日：2012-08-09
申请号：US13448413
申请日：2012-04-17
申请人： Chao-Wei Li , Chen-Peng Hsu , Yao-Jun Tsai , Hung-Lieh Hu
发明人： Chao-Wei Li , Chen-Peng Hsu , Yao-Jun Tsai , Hung-Lieh Hu
IPC分类号： H01L33/50
CPC分类号： H01L33/648 , H01L33/642 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A light-emitting diode (LED) package structure including a carrier substrate, at least one LED chip, an optical element and a thermal-conductive transparent liquid is provided. The LED chip is disposed on the carrier substrate and has an active layer. The optical element is disposed on the substrate and forms a sealed space with the carrier substrate, and the LED chip is disposed in the sealed space. The thermal-conductive transparent liquid fills up the sealed space.
摘要翻译：提供了包括载体基板，至少一个LED芯片，光学元件和导热透明液体的发光二极管（LED）封装结构。 LED芯片设置在载体基板上并具有有源层。光学元件设置在基板上并与载体基板形成密封空间，并且LED芯片设置在密封空间中。导热透明液体填充密封空间。

3. 发明授权

US08138518B2 Light emitting diode, package structure and manufacturing method thereof 有权
标题翻译：发光二极管，封装结构及其制造方法
公开(公告)号：US08138518B2
公开(公告)日：2012-03-20
申请号：US12419299
申请日：2009-04-07
申请人： Yao-Jun Tsai , Jinn-Kong Sheu , Hsi-Hsuan Yen , Hung-Lieh Hu
发明人： Yao-Jun Tsai , Jinn-Kong Sheu , Hsi-Hsuan Yen , Hung-Lieh Hu
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/38 , H01L33/382
摘要： A light emitting diode (LED), a fabricating method thereof, and a package structure thereof are provided. The LED includes a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, a current distribution modifying layer, a first electrode and a second electrode. The active layer and the second semiconductor layer form a mesa structure and expose a part of the first semiconductor layer. The current distribution modifying layer is disposed on the second semiconductor layer. The first electrode is disposed on and electrically connected to the first semiconductor layer exposed by the mesa structure. The second electrode is disposed on the current distribution modifying layer and is electrically connected to the second semiconductor layer. The LED has superior light emitting efficiency.
摘要翻译：提供一种发光二极管（LED）及其制造方法及其封装结构。 LED包括基板，设置在基板上的第一半导体层，设置在第一半导体层上的有源层，设置在有源层上的第二半导体层，电流分布修改层，第一电极和第二电极。有源层和第二半导体层形成台面结构并暴露第一半导体层的一部分。电流分布修改层设置在第二半导体层上。第一电极设置在由台面结构暴露的第一半导体层上并与其电连接。第二电极设置在电流分布改性层上并与第二半导体层电连接。 LED具有出色的发光效率。

4. 发明授权

US08115218B2 Light emitting diode package structure and method for fabricating the same 有权
标题翻译：发光二极管封装结构及其制造方法
公开(公告)号：US08115218B2
公开(公告)日：2012-02-14
申请号：US12501496
申请日：2009-07-13
申请人： Yao-Jun Tsai , Chen-Peng Hsu , Chao-Wei Li , Hung-Lieh Hu
发明人： Yao-Jun Tsai , Chen-Peng Hsu , Chao-Wei Li , Hung-Lieh Hu
IPC分类号： H01L33/00
CPC分类号： H01L33/56 , H01L33/508 , H01L33/54 , H01L33/641 , H01L33/642 , H01L33/647 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode (LED) package structure includes a carrier, a first protrusion, a LED chip, and an adhesion layer. The first protrusion is disposed on the carrier and has a first opening to expose the carrier. The LED chip is disposed in the first opening on the carrier, and a ratio between a width of the first opening and a width of the LED chip is 1˜1.5. The adhesion layer is disposed between the LED chip and the carrier to bond the LED chip to the carrier.
摘要翻译：发光二极管（LED）封装结构包括载体，第一突起，LED芯片和粘合层。第一突起设置在载体上并且具有第一开口以使载体露出。 LED芯片设置在载体上的第一开口中，第一开口的宽度与LED芯片的宽度之比为1〜1.5。粘合层设置在LED芯片和载体之间，以将LED芯片接合到载体上。

5. 发明申请

US20080133909A1 METHOD AND APPARATUS FOR INSERTING AUTHENTICATION CODE, AND METHOD AND APPARATUS FOR USING DATA THROUGH AUTHENTICATION 有权
标题翻译：用于插入认证码的方法和装置，以及通过认证使用数据的方法和装置
公开(公告)号：US20080133909A1
公开(公告)日：2008-06-05
申请号：US11873570
申请日：2007-10-17
申请人： Yong-kuk You , Yao Jun , Choong-hoon Lee
发明人： Yong-kuk You , Yao Jun , Choong-hoon Lee
IPC分类号： H04L9/00
CPC分类号： H04L9/3226 , H04L63/04 , H04L63/08 , H04L63/083 , H04L63/123 , H04L63/166
摘要： Provided is a method of inserting authentication code into a data packet. The method includes determining whether to insert authentication code into a data packet based on at least one of an importance of the data packet and a type of the data packet, and inserting the authentication code into the data packet based on a result of the determining.
摘要翻译：提供了将认证码插入到数据包中的方法。该方法包括基于数据分组的重要性和数据分组的类型中的至少一个来确定是否将认证码插入到数据分组中，并且基于确定的结果将认证码插入到数据分组中。

6. 发明授权

US09178107B2 Wafer-level light emitting diode structure, light emitting diode chip, and method for forming the same 有权
标题翻译：晶圆级发光二极管结构，发光二极管芯片及其形成方法
公开(公告)号：US09178107B2
公开(公告)日：2015-11-03
申请号：US13197677
申请日：2011-08-03
申请人： Yao-Jun Tsai , Chen-Peng Hsu , Kuo-Feng Lin , Hsun-Chih Liu , Hung-Lieh Hu , Chien-Jen Sun
发明人： Yao-Jun Tsai , Chen-Peng Hsu , Kuo-Feng Lin , Hsun-Chih Liu , Hung-Lieh Hu , Chien-Jen Sun
IPC分类号： H01L33/00 , H01L33/20 , H01L33/44
CPC分类号： H01L33/0095 , H01L33/20 , H01L33/44 , H01L2933/0016
摘要： A method for fabricating a wafer-level light emitting diode structure is provided. The method includes: providing a substrate, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are sequentially disposed on the substrate; subjecting the first semiconductor layer, the light emitting layer, and the second semiconductor layer with a patterning process to form a first depressed portion, a second depressed portion, a stacked structure disposed on the second depressed portion and a remained first semiconductor layer disposed on the depressed portion, wherein the stacked structure comprises a patterned second semiconductor layer, a patterned emitting layer, and a patterned first semiconductor layer; forming a first electrode on the remained first semiconductor layer of the first depressed portion; and forming a second electrode correspondingly disposed on the patterned second semiconductor layer of the second depressed portion.
摘要翻译：提供了一种制造晶片级发光二极管结构的方法。该方法包括：提供衬底，其中第一半导体层，发光层和第二半导体层依次设置在衬底上; 通过图案化工艺对第一半导体层，发光层和第二半导体层进行处理，以形成设置在第二凹部上的第一凹部，第二凹部，层叠结构，以及设置在第二凹部凹陷部分，其中所述堆叠结构包括图案化的第二半导体层，图案化发光层和图案化的第一半导体层; 在第一凹部的残留的第一半导体层上形成第一电极; 以及形成相应地设置在所述第二凹陷部分的图案化的第二半导体层上的第二电极。

7. 发明授权

US08692274B2 Light emitting diode package structure 有权
标题翻译：发光二极管封装结构
公开(公告)号：US08692274B2
公开(公告)日：2014-04-08
申请号：US13448413
申请日：2012-04-17
申请人： Chao-Wei Li , Chen-Peng Hsu , Yao-Jun Tsai , Hung-Lieh Hu
发明人： Chao-Wei Li , Chen-Peng Hsu , Yao-Jun Tsai , Hung-Lieh Hu
IPC分类号： H01L33/00
CPC分类号： H01L33/648 , H01L33/642 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A light-emitting diode (LED) package structure including a carrier substrate, at least one LED chip, an optical element and a thermal-conductive transparent liquid is provided. The LED chip is disposed on the carrier substrate and has an active layer. The optical element is disposed on the substrate and forms a sealed space with the carrier substrate, and the LED chip is disposed in the sealed space. The thermal-conductive transparent liquid fills up the sealed space.
摘要翻译：提供了包括载体基板，至少一个LED芯片，光学元件和导热透明液体的发光二极管（LED）封装结构。 LED芯片设置在载体基板上并具有有源层。光学元件设置在基板上并与载体基板形成密封空间，并且LED芯片设置在密封空间中。导热透明液体填充密封空间。

8. 发明授权

US08193541B2 Light emitting diode structure having a conductive thin film for connecting a light emitting stack to an electrode and LED packaging structure using the same 有权
标题翻译：具有用于将发光堆叠连接到电极的导电薄膜的发光二极管结构和使用其的LED封装结构
公开(公告)号：US08193541B2
公开(公告)日：2012-06-05
申请号：US12980593
申请日：2010-12-29
申请人： Yao-Jun Tsai , Chen-Peng Hsu , Hung-Lieh Hu , Ji-Feng Chen
发明人： Yao-Jun Tsai , Chen-Peng Hsu , Hung-Lieh Hu , Ji-Feng Chen
IPC分类号： H01L33/00 , H01L33/18
CPC分类号： H01L25/167 , H01L2924/0002 , H01L2924/00
摘要： A light emitting diode (LED) structure and a LED packaging structure are disclosed. The LED structure includes a sub-mount, a stacked structure, an electrode, an isolation layer and a conductive thin film layer. The sub-mount has a first surface and a second surface opposite the first surface. The stacked structure has a first semiconductor layer, an active layer and a second semiconductor layer that are laminated on the first surface. The electrode is disposed apart from the stacked structure on the first surface. The isolation layer is disposed on the first surface to surround the stacked structure as well as cover the lateral sides of the active layer. The conductive thin film layer connects the electrode to the stacked structure and covers the stacked structure.
摘要翻译：公开了一种发光二极管（LED）结构和LED封装结构。 LED结构包括子安装座，堆叠结构，电极，隔离层和导电薄膜层。子安装座具有与第一表面相对的第一表面和第二表面。叠层结构具有层压在第一表面上的第一半导体层，有源层和第二半导体层。电极与第一表面上的堆叠结构隔开。隔离层设置在第一表面上以包围堆叠结构以及覆盖有源层的侧面。导电薄膜层将电极连接到堆叠结构并覆盖堆叠结构。

9. 发明授权

US5919937A Process for phosphodiesterase IV inhibitors 失效
标题翻译：磷酸二酯酶IV抑制剂的方法
公开(公告)号：US5919937A
公开(公告)日：1999-07-06
申请号：US167462
申请日：1998-10-07
申请人： Joseph E. Lynch , Kenneth M. Wells , Yao-Jun Shi
发明人： Joseph E. Lynch , Kenneth M. Wells , Yao-Jun Shi
IPC分类号： C07D213/30
CPC分类号： C07D213/30
摘要： The invention encompasses a novel process for the formation of enantiomerically enriched mixtures of compounds of Formula I, which are useful precursors in the synthesis of phosphodiestersae IV inhibitors.
摘要翻译：本发明包括形成式I化合物的对映异构体富集的混合物的新方法，其是合成磷酸二酯IV抑制剂中的有用前体。

10. 发明授权

US5777123A Process for regioselective substitution of trifluorobenzoate or trifluorobenzonitrile 失效
标题翻译：三氟苯甲酸或三氟苄腈的区域选择性取代方法
公开(公告)号：US5777123A
公开(公告)日：1998-07-07
申请号：US806502
申请日：1997-02-27
申请人： Joseph E. Lynch , Yao-Jun Shi , Kenneth M. Wells
发明人： Joseph E. Lynch , Yao-Jun Shi , Kenneth M. Wells
IPC分类号： C07D211/46 , C07D295/155 , C07D413/14 , C07D211/44 , A61K31/445
CPC分类号： C07D295/155 , C07D211/46 , C07D413/14
摘要： The invention provides a process for regioselective substitution of trifluorobenzoate/trifluorobenzonitrile to afford the difluorobenzoate/difluorobenzonitrile in good yields. The resulting difluorobenzoate/difluorobenzonitrile can again be regioselectively substituted with a second nucleophile to give monofluorobenzoate/monofluorobenzonitrile also in good yields. This process is particularly useful for forming key intermediates in the synthesis of oxytocin antagonist compounds.
摘要翻译：本发明提供了一种三氟苯甲酸酯/三氟苄腈的区域选择性取代方法，以高产率得到二氟苯甲酸酯/二氟苄腈。得到的二氟苯甲酸酯/二氟苄腈可以再次用第二亲核试剂区域选择性地取代，得到单氟苯甲酸酯/单氟苄腈，也以良好的产率。该方法特别适用于在合成催产素拮抗剂化合物中形成关键中间体。

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