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1. 发明申请

US20130087823A1 LIGHT EMITTING DIODE CHIP, LIGHT EMITTING DIODE PACKAGE STRUCTURE, AND METHOD FOR FORMING THE SAME 有权
标题翻译：发光二极管芯片，发光二极管封装结构及其形成方法
公开(公告)号：US20130087823A1
公开(公告)日：2013-04-11
申请号：US13806703
申请日：2011-08-03
申请人： Yao-Jun Tsai , Chen-Peng Hsu , Kuo-Feng Lin , Hsun-Chin Liu , Ji-Feng Chen , Hung-Lieh Hu , Chien-Jen Sun
发明人： Yao-Jun Tsai , Chen-Peng Hsu , Kuo-Feng Lin , Hsun-Chin Liu , Ji-Feng Chen , Hung-Lieh Hu , Chien-Jen Sun
IPC分类号： H01L33/20 , H01L33/10
CPC分类号： H01L33/62 , H01L33/0079 , H01L33/0095 , H01L33/10 , H01L33/20 , H01L33/38 , H01L33/48 , H01L2224/06102 , H01L2224/14 , H01L2224/16225 , H01L2224/24 , H01L2224/48091 , H01L2224/48227 , H01L2224/48463 , H01L2224/73267 , H01L2224/82 , H01L2224/8592 , H01L2224/92244 , H01L2924/12032 , H01L2924/00 , H01L2924/00014
摘要： A light emitting diode chip, a light emitting diode package structure and a method for forming the same are provided. The light emitting diode chip includes a bonding layer, which has a plurality of voids, or a minimum horizontal distance between a surrounding boundary of the light emitting diode chip and the bonding layer is larger than 0. The light emitting diode chip, the light emitting diode package structure and the method may improve the product yields and enhance the light emitting efficiency.
摘要翻译：提供一种发光二极管芯片，发光二极管封装结构及其形成方法。发光二极管芯片包括具有多个空隙的接合层，或者发光二极管芯片的周围边界与接合层之间的最小水平距离大于0.发光二极管芯片，发光二极管封装结构和方法可以提高产品产量并提高发光效率。

2. 发明申请

US20120145078A1 SHOWERHEAD INTEGRATING INTAKE AND EXHAUST 审中-公开
标题翻译：淋浴收集和排气
公开(公告)号：US20120145078A1
公开(公告)日：2012-06-14
申请号：US13211309
申请日：2011-08-17
申请人： Chih-Yung Huang , Ching-Chiun Wang , Chen-Der Tsai , Wen-Tung Hsu , Fu-Ching Tung , Chien-Chih Chen , Yi-Tsung Pan , Chien-Jen Sun
发明人： Chih-Yung Huang , Ching-Chiun Wang , Chen-Der Tsai , Wen-Tung Hsu , Fu-Ching Tung , Chien-Chih Chen , Yi-Tsung Pan , Chien-Jen Sun
IPC分类号： C23C16/455 , B05B1/14
CPC分类号： C23C16/45565 , C23C16/4412
摘要： A showerhead integrating intake and exhaust is provided for showering a gas. The showerhead at least includes a showerhead body that has a gas-active surface and a plurality of intake bores thereon. The showerhead body further includes a central exhaust vent disposed on the gas-active surface. The central exhaust vent may exhaust standing gas and further pre-exhaust byproduct from reaction process.
摘要翻译：提供集成进气和排气的淋浴头，用于喷射气体。淋浴头至少包括具有气体活性表面和多个进气孔的喷头体。喷头体还包括设置在气体活性表面上的中央排气口。中央排气口可以从反应过程中排放站立气体和进一步预排气副产物。

3. 发明申请

US20120034714A1 WAFER-LEVEL LIGHT EMITTING DIODE STRUCTURE, LIGHT EMITTING DIODE CHIP, AND METHOD FOR FORMING THE SAME 有权
标题翻译：水平发光二极管结构，发光二极管芯片及其形成方法
公开(公告)号：US20120034714A1
公开(公告)日：2012-02-09
申请号：US13197677
申请日：2011-08-03
申请人： Yao-Jun TSAI , Chen-Peng HSU , Kuo-Feng LIN , Hsun-Chih LIU , Hung-Lieh HU , Chien-Jen SUN
发明人： Yao-Jun TSAI , Chen-Peng HSU , Kuo-Feng LIN , Hsun-Chih LIU , Hung-Lieh HU , Chien-Jen SUN
IPC分类号： H01L21/66 , H01L33/36
CPC分类号： H01L33/0095 , H01L33/20 , H01L33/44 , H01L2933/0016
摘要： A method for fabricating a wafer-level light emitting diode structure is provided. The method includes: providing a substrate, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are sequentially disposed on the substrate; subjecting the first semiconductor layer, the light emitting layer, and the second semiconductor layer with a patterning process to form a first depressed portion, a second depressed portion, a stacked structure disposed on the second depressed portion and a remained first semiconductor layer disposed on the depressed portion, wherein the stacked structure comprises a patterned second semiconductor layer, a patterned emitting layer, and a patterned first semiconductor layer; forming a first electrode on the remained first semiconductor layer of the first depressed portion; and forming a second electrode correspondingly disposed on the patterned second semiconductor layer of the second depressed portion.
摘要翻译：提供了一种制造晶片级发光二极管结构的方法。该方法包括：提供衬底，其中第一半导体层，发光层和第二半导体层依次设置在衬底上; 通过图案化工艺对第一半导体层，发光层和第二半导体层进行处理，以形成设置在第二凹部上的第一凹部，第二凹部，层叠结构，以及设置在第二凹部凹陷部分，其中所述堆叠结构包括图案化的第二半导体层，图案化发光层和图案化的第一半导体层; 在第一凹部的残留的第一半导体层上形成第一电极; 以及形成相应地设置在所述第二凹陷部分的图案化的第二半导体层上的第二电极。

4. 发明申请

US20110280511A1 BONDING SYSTEM FOR OPTICAL ALIGNMENT 有权
标题翻译：用于光学对准的接合系统
公开(公告)号：US20110280511A1
公开(公告)日：2011-11-17
申请号：US12778127
申请日：2010-05-12
申请人： Chih-Tsung Shih , Chien-Jen Sun , Jerry Chien , Chu-Liang Cheng , Yi-Jen Chan
发明人： Chih-Tsung Shih , Chien-Jen Sun , Jerry Chien , Chu-Liang Cheng , Yi-Jen Chan
IPC分类号： G02B6/12 , H01L33/48
CPC分类号： G02B6/423 , G02B6/4238 , H01L2224/8114
摘要： A bonding system and a bonding method for alignment are provided. An optical semiconductor includes a light source and a plurality of protruded elements on a surface thereof. A semiconductor bench includes a light receiving element and a plurality of recess elements on a surface thereof. A sidewall of the protruded elements or a sidewall of the recess elements is slanted. A first metallized layer is disposed on a bonding surface of each protruded element and a second metallized layer is disposed on a bottom surface of each recess element, wherein the first metallized layer is used for bonding with the second metallized layer.
摘要翻译：提供了一种接合系统和用于对准的接合方法。光学半导体在其表面上包括光源和多个突出元件。半导体工作台在其表面上包括光接收元件和多个凹陷元件。突出元件的侧壁或凹部的侧壁是倾斜的。第一金属化层设置在每个突出元件的接合表面上，并且第二金属化层设置在每个凹陷元件的底表面上，其中第一金属化层用于与第二金属化层结合。

5. 发明申请

US20110062414A1 LIGHT EMITTING DEVICES 有权
标题翻译：发光装置
公开(公告)号：US20110062414A1
公开(公告)日：2011-03-17
申请号：US12953323
申请日：2010-11-23
申请人： Jih-Fu Wang , Chia-Hsin Chao , Chen-Yang Huang , Han-Tsung Hsueh , Chun-Feng Lai , Wen-Yung Yeh , Chien-Jen Sun
发明人： Jih-Fu Wang , Chia-Hsin Chao , Chen-Yang Huang , Han-Tsung Hsueh , Chun-Feng Lai , Wen-Yung Yeh , Chien-Jen Sun
IPC分类号： H01L33/04 , B82Y99/00
CPC分类号： H01L33/02 , H01L33/22 , H01L33/405 , H01L2933/0083
摘要： A new light emitting device is disclosed, including a polarizing surface layer, a light emitting layer which emits light at a wavelength, and a light transformation layer disposed between the light emitting layer and the reflective layer, wherein the light emitting layer is disposed between the reflective layer and the polarizing surface layer, and an optical thickness between the light emitting layer and the reflective layer is less than a value of five times of a quarter of the wavelength.
摘要翻译：公开了一种新的发光器件，其包括偏振表面层，发射波长的光的发光层和设置在发光层和反射层之间的光变换层，其中发光层设置在反射层和偏振表面层，并且发光层和反射层之间的光学厚度小于四分之一波长的五倍的值。

6. 发明授权

US09178107B2 Wafer-level light emitting diode structure, light emitting diode chip, and method for forming the same 有权
标题翻译：晶圆级发光二极管结构，发光二极管芯片及其形成方法
公开(公告)号：US09178107B2
公开(公告)日：2015-11-03
申请号：US13197677
申请日：2011-08-03
申请人： Yao-Jun Tsai , Chen-Peng Hsu , Kuo-Feng Lin , Hsun-Chih Liu , Hung-Lieh Hu , Chien-Jen Sun
发明人： Yao-Jun Tsai , Chen-Peng Hsu , Kuo-Feng Lin , Hsun-Chih Liu , Hung-Lieh Hu , Chien-Jen Sun
IPC分类号： H01L33/00 , H01L33/20 , H01L33/44
CPC分类号： H01L33/0095 , H01L33/20 , H01L33/44 , H01L2933/0016
摘要： A method for fabricating a wafer-level light emitting diode structure is provided. The method includes: providing a substrate, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are sequentially disposed on the substrate; subjecting the first semiconductor layer, the light emitting layer, and the second semiconductor layer with a patterning process to form a first depressed portion, a second depressed portion, a stacked structure disposed on the second depressed portion and a remained first semiconductor layer disposed on the depressed portion, wherein the stacked structure comprises a patterned second semiconductor layer, a patterned emitting layer, and a patterned first semiconductor layer; forming a first electrode on the remained first semiconductor layer of the first depressed portion; and forming a second electrode correspondingly disposed on the patterned second semiconductor layer of the second depressed portion.
摘要翻译：提供了一种制造晶片级发光二极管结构的方法。该方法包括：提供衬底，其中第一半导体层，发光层和第二半导体层依次设置在衬底上; 通过图案化工艺对第一半导体层，发光层和第二半导体层进行处理，以形成设置在第二凹部上的第一凹部，第二凹部，层叠结构，以及设置在第二凹部凹陷部分，其中所述堆叠结构包括图案化的第二半导体层，图案化发光层和图案化的第一半导体层; 在第一凹部的残留的第一半导体层上形成第一电极; 以及形成相应地设置在所述第二凹陷部分的图案化的第二半导体层上的第二电极。

7. 发明授权

US08410503B2 Light emitting devices 有权
标题翻译：发光装置
公开(公告)号：US08410503B2
公开(公告)日：2013-04-02
申请号：US12953323
申请日：2010-11-23
申请人： Jih-Fu Wang , Chia-Hsin Chao , Chen-Yang Huang , Han-Tsung Hsueh , Chun-Feng Lai , Wen-Yung Yeh , Chien-Jen Sun
发明人： Jih-Fu Wang , Chia-Hsin Chao , Chen-Yang Huang , Han-Tsung Hsueh , Chun-Feng Lai , Wen-Yung Yeh , Chien-Jen Sun
IPC分类号： H01L33/00 , H01L27/15
CPC分类号： H01L33/02 , H01L33/22 , H01L33/405 , H01L2933/0083
摘要： A new light emitting device is disclosed, including a polarizing surface layer, a light emitting layer which emits light at a wavelength, and a light transformation layer disposed between the light emitting layer and the reflective layer, wherein the light emitting layer is disposed between the reflective layer and the polarizing surface layer, and an optical thickness between the light emitting layer and the reflective layer is less than a value of five times of a quarter of the wavelength.
摘要翻译：公开了一种新的发光器件，其包括偏振表面层，发射波长的光的发光层和设置在发光层和反射层之间的光变换层，其中发光层设置在反射层和偏振表面层，并且发光层和反射层之间的光学厚度小于四分之一波长的五倍的值。

8. 发明申请

US20090317033A1 INTEGRATED CIRCUIT AND PHOTONIC BOARD THEREOF 审中-公开
标题翻译：集成电路和光电板
公开(公告)号：US20090317033A1
公开(公告)日：2009-12-24
申请号：US12142808
申请日：2008-06-20
申请人： Chih-Tsung Shih , Ding-Yuan Chen , Hung-Pin Yang , Shu-Mei Yang , Shinh Chao , Yung-Jui Chen , Chien-Jen Sun
发明人： Chih-Tsung Shih , Ding-Yuan Chen , Hung-Pin Yang , Shu-Mei Yang , Shinh Chao , Yung-Jui Chen , Chien-Jen Sun
IPC分类号： G02B6/12
CPC分类号： G02B6/12004 , G02B6/3596 , G02B6/43
摘要： An integrated circuit (IC) including at least a first and a second logical blocks and a photonic board is provided. The photonic board connects with the first and the second logical blocks through a eutectic bonding technology, and communicates at least a logical signal of the first logical block to the second logical block by light conduction.
摘要翻译：提供包括至少第一和第二逻辑块的集成电路（IC）和光子板。光子板通过共晶接合技术与第一和第二逻辑块连接，并且通过光传导将第一逻辑块的至少逻辑信号传送到第二逻辑块。

9. 发明申请

US20090115313A1 LIGHT EMITTING DEVICE AND FABRICATING METHOD THEREOF 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20090115313A1
公开(公告)日：2009-05-07
申请号：US12182218
申请日：2008-07-30
申请人： Chien-Chun LU , Chia-Tai Kuo , Chen-Peng Hsu , Hung-Lieh Hu , Chien-Jen Sun
发明人： Chien-Chun LU , Chia-Tai Kuo , Chen-Peng Hsu , Hung-Lieh Hu , Chien-Jen Sun
IPC分类号： H01J1/62 , H01J9/02
CPC分类号： H01L33/505 , H01L33/508 , H01L33/60 , H01L2924/0002 , H05B33/10 , H01L2924/00
摘要： A light emitting device and a fabricating method thereof are described. The light emitting device includes a substrate, a light emitting chip, a tubular structure, and a fluorescent conversion layer. The tubular structure is formed on a surface of the substrate. The light emitting chip is disposed on the surface of the substrate and is surrounded by the tubular structure. The fluorescent conversion layer is disposed in the tubular structure and covers the light emitting chip. A ratio of a maximal vertical thickness and a maximal horizontal thickness of the fluorescent conversion layer at the light emitting chip is between 0.1 and 10. A distance for the light ray to pass through the fluorescent conversion layer is controlled by using the tubular structure, so as to solve a problem of the conventional art that fluorescent powder coating package technique results in non-uniform color temperature of the emitted light.
摘要翻译：描述了发光器件及其制造方法。发光器件包括衬底，发光芯片，管状结构和荧光转换层。管状结构形成在基板的表面上。发光芯片设置在基板的表面上并被管状结构包围。荧光转换层设置在管状结构中并覆盖发光芯片。发光芯片上的荧光转换层的最大垂直厚度与最大水平厚度之比在0.1和10之间。通过使用管状结构来控制光线通过荧光转换层的距离，因此为了解决现有技术的问题，荧光粉末涂布包装技术导致发出的光的不均匀的色温。

10. 发明授权

US08368099B2 Light emitting device and fabricating method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08368099B2
公开(公告)日：2013-02-05
申请号：US12182218
申请日：2008-07-30
申请人： Chien-Chun Lu , Chia-Tai Kuo , Chen-Peng Hsu , Hung-Lieh Hu , Chien-Jen Sun
发明人： Chien-Chun Lu , Chia-Tai Kuo , Chen-Peng Hsu , Hung-Lieh Hu , Chien-Jen Sun
IPC分类号： H01L33/00
CPC分类号： H01L33/505 , H01L33/508 , H01L33/60 , H01L2924/0002 , H05B33/10 , H01L2924/00
摘要： A light emitting device and a fabricating method thereof are described. The light emitting device includes a substrate, a light emitting chip, a tubular structure, and a fluorescent conversion layer. The tubular structure is formed on a surface of the substrate. The light emitting chip is disposed on the surface of the substrate and is surrounded by the tubular structure. The fluorescent conversion layer is disposed in the tubular structure and covers the light emitting chip. A ratio of a maximal vertical thickness and a maximal horizontal thickness of the fluorescent conversion layer at the light emitting chip is between 0.1 and 10. A distance for the light ray to pass through the fluorescent conversion layer is controlled by using the tubular structure, so as to solve a problem of the conventional art that fluorescent powder coating package technique results in non-uniform color temperature of the emitted light.
摘要翻译：描述了发光器件及其制造方法。发光器件包括衬底，发光芯片，管状结构和荧光转换层。管状结构形成在基板的表面上。发光芯片设置在基板的表面上并被管状结构包围。荧光转换层设置在管状结构中并覆盖发光芯片。发光芯片上的荧光转换层的最大垂直厚度与最大水平厚度的比率为0.1至10.通过使用管状结构来控制光线穿过荧光转换层的距离，因此为了解决现有技术的问题，荧光粉末涂布包装技术导致发出的光的不均匀的色温。

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