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1. 发明授权

US09547734B2 Array modeling for one or more analog devices 有权
标题翻译：一个或多个模拟设备的阵列建模
公开(公告)号：US09547734B2
公开(公告)日：2017-01-17
申请号：US13596214
申请日：2012-08-28
申请人： Yang Chung-Chieh , Chih-Chiang Chang , Chung-Ting Lu
发明人： Yang Chung-Chieh , Chih-Chiang Chang , Chung-Ting Lu
IPC分类号： G06F17/50
CPC分类号： G06F17/5036 , G06F17/5063 , G06F17/5068
摘要： Among other things, one or more techniques for creating an array model for analog device modeling are provided. In an embodiment, the array model represents a mean value or a standard deviation value of an analog device characteristic for an analog device based on a physical location of the analog device within a circuit layout, where the physical location is identified using a physical set of coordinates. The physical set of coordinates maps to an array set of coordinates of the array model. In this manner, a mean value and a standard deviation value are obtainable from the array model using the array set of coordinates. The mean value and the standard deviation value are usable to model the analog device, and thus a circuit within which the analog device is used, to obtain a more accurate or realistic prediction of operation or behavior, for example.
摘要翻译：提供了一种或多种用于创建用于模拟设备建模的阵列模型的技术。在一个实施例中，阵列模型表示基于电路布局内的模拟设备的物理位置的模拟设备的模拟设备特性的平均值或标准偏差值，其中使用物理位置坐标物理坐标系映射到数组模型的坐标数组。以这种方式，可以使用阵列坐标系从阵列模型中获得平均值和标准偏差值。平均值和标准偏差值可用于对模拟装置进行建模，并因此对使用模拟装置的电路进行建模，以获得例如操作或行为的更准确或更现实的预测。

2. 发明申请

US20130142594A1 Methods for Transporting Wafers Between Wafer Holders and Chambers 有权
标题翻译：在晶片座和室之间传输晶片的方法
公开(公告)号：US20130142594A1
公开(公告)日：2013-06-06
申请号：US13309283
申请日：2011-12-01
申请人： Shao-Yen Ku , Ming-Jung Chen , Tsu-Yang Chung , Chi-Yun Tseng , Jui-Ping Chuang
发明人： Shao-Yen Ku , Ming-Jung Chen , Tsu-Yang Chung , Chi-Yun Tseng , Jui-Ping Chuang
IPC分类号： H01L21/677
CPC分类号： H01L21/67201
摘要： An apparatus comprises a process chamber, and a loadlock connected to the process chamber. The loadlock is configured to have a wafer holder disposed therein. The wafer holder is configured to store a plurality of wafers, and is configured to transport the plurality of wafers away from the loadlock.
摘要翻译：一种装置包括处理室和连接到处理室的负载锁。负载锁被配置为具有设置在其中的晶片保持架。晶片保持器被配置为存储多个晶片，并且被配置为将多个晶片远离装载锁传送。

3. 发明申请

US20120263978A1 ENERGY STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：能源储存装置及其制造方法
公开(公告)号：US20120263978A1
公开(公告)日：2012-10-18
申请号：US13445856
申请日：2012-04-12
申请人： Chung-Hsiung Wang , Chi-Feng Lin , Han-Yang Chung , Wen-Hsiung Liao
发明人： Chung-Hsiung Wang , Chi-Feng Lin , Han-Yang Chung , Wen-Hsiung Liao
IPC分类号： H01M2/00 , H05K5/00 , H01M10/04
CPC分类号： H01M10/4257 , H01G2/06 , H01G11/74 , H01G11/82 , H01M2/0202 , H01M2/08 , Y02E60/13 , Y10T29/43 , Y10T29/4911
摘要： An energy storage device and a method of manufacturing the same are disclosed. The energy storage device includes a circuit board, a conductive cover disposed above the circuit board, a sealing structure, a metal coating layer, and an electrochemical cell. The sealing structure is disposed between the circuit board and the circumference of the conductive cover such that the circuit board, the conductive cover, and the sealing structure together form a sealed space where the electrochemical cell is disposed. The metal coating layer continuously covers a part of the conductive cover, an exposed portion of the sealing structure, and a part of the circuit board. Therefore, even if the energy storage device needs to be heated during a product assembly, the metal coating layer can keep the sealing structure structurally stable, and the electrolyte of the electrochemical cell will not leak; the whole energy storage device therefore can keeps undamaged.
摘要翻译：公开了一种储能装置及其制造方法。能量存储装置包括电路板，布置在电路板上方的导电盖，密封结构，金属涂层和电化学电池。密封结构设置在电路板和导电盖的圆周之间，使得电路板，导电盖和密封结构一起形成电化学电池设置的密封空间。金属涂层连续地覆盖导电盖的一部分，密封结构的暴露部分和电路板的一部分。因此，即使在产品组装时需要对能量储存装置进行加热，金属涂层也可以使结构稳定地保持密封结构，电解池的电解液不会泄漏; 因此，整个储能装置可以保持不损坏。

4. 发明授权

US07256093B2 Method of forming a recessed buried-diffusion device 有权
标题翻译：形成埋入式扩散装置的方法
公开(公告)号：US07256093B2
公开(公告)日：2007-08-14
申请号：US11248786
申请日：2005-10-11
申请人： Chiu Hung Yu , Yang Chung-Heng , Wu Lin-June
发明人： Chiu Hung Yu , Yang Chung-Heng , Wu Lin-June
IPC分类号： H01L21/336
CPC分类号： H01L29/6656 , H01L29/665 , H01L29/6659 , H01L29/66636 , H01L29/7834
摘要： A method of forming a device (and the device so formed) comprising the following steps. A structure having a gate structure formed thereover is provided. Respective low doped drains are formed within the structure at least adjacent to the gate structure. A pocket implant is formed within the structure. The structure adjacent the gate structure is etched to form respective trenches having exposed side walls. Respective first liner structures are formed at least over the exposed side walls of trenches. Respective second liner structures are formed over the first liner structures. Source/drain implants are formed adjacent to, and outboard of, second liner structures to complete formation of device.
摘要翻译：一种形成装置（以及如此形成的装置）的方法，包括以下步骤。提供具有形成在其上的栅极结构的结构。在结构内形成至少与栅极结构相邻的各种低掺杂漏极。在结构内形成袋状植入物。蚀刻与栅极结构相邻的结构以形成具有暴露侧壁的相应沟槽。至少在沟槽的暴露的侧壁上形成相应的第一衬里结构。在第一衬里结构上形成相应的第二衬里结构。源/漏植入物邻近第二衬里结构并且在其外侧形成以完成器件的形成。

5. 发明申请

US20060151313A1 Thin film battery, anode film for thin film battery and preparation method thereof 审中-公开
标题翻译：薄膜电池，薄膜电池用阳极膜及其制备方法
公开(公告)号：US20060151313A1
公开(公告)日：2006-07-13
申请号：US11035855
申请日：2005-01-13
申请人： Maw-Kuen Wu , Chia-Lin Wang , Yang-Chung Liao , Nyan-Hwa Tai , Fong-Chi Hsu
发明人： Maw-Kuen Wu , Chia-Lin Wang , Yang-Chung Liao , Nyan-Hwa Tai , Fong-Chi Hsu
IPC分类号： C23C14/00
CPC分类号： H01M4/40 , C23C14/08 , C23C14/3414 , H01M4/58 , H01M4/5825 , H01M4/661
摘要： Method for preparation of anode film for thin film battery comprises: providing a target material to provide Li ion and Ti ion and a substrate comprising a base layer, a buffer layer and a precious metal current collector layer; sputtering LiMO layer on a said substrate at high temperature in a vacuum chamber and obtaining the anode film for thin film battery of this invention. In this invention, material for the precious metal current collector may be a precious metal such as Ag, Au, Pt etc., the alloy and oxides of these metals. The sputtering temperature may be above 300° C., preferably above 500° C. and most preferably above 650° C. The anode thin film material so prepared may be Li4Ti5O12. This invention also discloses anode film so prepared and thin film battery using such anode film.
摘要翻译：制备薄膜电池用阳极薄膜的方法包括：提供靶材以提供Li离子和Ti离子，以及包括基底层，缓冲层和贵金属集电体层的基底; 在真空室中在高温下在所述基板上溅射LiMO层，并获得本发明的薄膜电池用阳极膜。在本发明中，贵金属集电体的材料可以是Ag，Au，Pt等贵金属，这些金属的合金和氧化物。溅射温度可以高于300℃，优选高于500℃，最优选高于650℃。如此制备的阳极薄膜材料可以是Li 4 Ti 5， 12＆gt; 12＆lt; 12＆gt ;. 本发明还公开了如此制备的阳极膜和使用这种阳极膜的薄膜电池。

6. 发明授权

US06975000B2 Method of forming a recessed buried-diffusion device 失效
标题翻译：形成埋入式扩散装置的方法
公开(公告)号：US06975000B2
公开(公告)日：2005-12-13
申请号：US10820390
申请日：2004-04-08
申请人： Chiu-Hung Yu , Yang Chung-Heng , Wu Lin-June
发明人： Chiu-Hung Yu , Yang Chung-Heng , Wu Lin-June
IPC分类号： H01L21/00 , H01L21/336 , H01L29/76 , H01L29/78 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/6656 , H01L29/665 , H01L29/6659 , H01L29/66636 , H01L29/7834
摘要： A method of forming a device (and the device so formed) comprising the following steps. A structure having a gate structure formed thereover is provided. Respective low doped drains are formed within the structure at least adjacent to the gate structure. A pocket implant is formed within the structure. The structure adjacent the gate structure is etched to form respective trenches having exposed side walls. Respective first liner structures are formed at least over the exposed side walls of trenches. Respective second liner structures are formed over the first liner structures. Source/drain implants are formed adjacent to, and outboard of, second liner structures to complete formation of device.
摘要翻译：一种形成装置（以及如此形成的装置）的方法，包括以下步骤。提供具有形成在其上的栅极结构的结构。在结构内形成至少与栅极结构相邻的各种低掺杂漏极。在结构内形成袋状植入物。蚀刻与栅极结构相邻的结构以形成具有暴露侧壁的相应沟槽。至少在沟槽的暴露的侧壁上形成相应的第一衬里结构。在第一衬里结构上形成相应的第二衬里结构。源/漏植入物邻近第二衬里结构并且在其外侧形成以完成器件的形成。

7. 发明申请

US20050224873A1 METHOD OF FORMING A RECESSED BURIED-DIFFUSION DEVICE 失效
标题翻译：形成受阻扩张装置的方法
公开(公告)号：US20050224873A1
公开(公告)日：2005-10-13
申请号：US10820390
申请日：2004-04-08
申请人： Chiu-Hung Yu , Yang Chung-Heng , Wu Lin-June
发明人： Chiu-Hung Yu , Yang Chung-Heng , Wu Lin-June
IPC分类号： H01L21/00 , H01L21/336 , H01L29/76 , H01L29/78 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/6656 , H01L29/665 , H01L29/6659 , H01L29/66636 , H01L29/7834
摘要： A method of forming a device (and the device so formed) comprising the following steps. A structure having a gate structure formed thereover is provided. Respective low doped drains are formed within the structure at least adjacent to the gate structure. A pocket implant is formed within the structure. The structure adjacent the gate structure is etched to form respective trenches having exposed side walls. Respective first liner structures are formed at least over the exposed side walls of trenches. Respective second liner structures are formed over the first liner structures. Source/drain implants are formed adjacent to, and outboard of, second liner structures to complete formation of device.
摘要翻译：一种形成装置（以及如此形成的装置）的方法，包括以下步骤。提供具有形成在其上的栅极结构的结构。在结构内形成至少与栅极结构相邻的各种低掺杂漏极。在结构内形成袋状植入物。蚀刻与栅极结构相邻的结构以形成具有暴露侧壁的相应沟槽。至少在沟槽的暴露的侧壁上形成相应的第一衬里结构。在第一衬里结构上形成相应的第二衬里结构。源/漏植入物邻近第二衬里结构并且在其外侧形成以完成器件的形成。

8. 发明授权

US6156263A Molten steel smelting apparatus for producing ultra-low carbon steel 失效
标题翻译：用于生产超低碳钢的熔钢冶炼设备
公开(公告)号：US6156263A
公开(公告)日：2000-12-05
申请号：US77906
申请日：1998-06-04
申请人： Sang Bok An , Joon Yang Chung , Dae Saeng Kim , Chang Hee Yim , Byeong Og You , Hyeon Soo Choi , Wang Yeol Seo , Chang Hyun Lee
发明人： Sang Bok An , Joon Yang Chung , Dae Saeng Kim , Chang Hee Yim , Byeong Og You , Hyeon Soo Choi , Wang Yeol Seo , Chang Hyun Lee
IPC分类号： C21C7/00 , C21C7/10
CPC分类号： C21C7/10
摘要： A molten steel refining apparatus and a method therefor, in which the carbon component of molten steel can be easily removed, the temperature drop of molten steel can be effectively reduced, and a stable operation is realized. The apparatus for refining molten steel for manufacturing ultra low carbon steel includes an RH vacuum-degassing device consisting of a vessel and a snorkel composed of an up-leg and a down-leg. The apparatus further includes a plurality of gas injection lance nozzles each consisting of an inner tube and an outer tube, and installed on the side wall of the vessel of the RH vacuum-degassing device so as to inject gas toward molten steel within the vessel. The inner tube includes a throat for forming a jet stream of super-sonic velocity, and the outer tube injects cooling gas for cooling the inner tube.
摘要翻译： PCT No.PCT / KR96 / 00264 Sec。 371日期：1998年6月4日 102（e）1998年6月4日PCT 1996年12月30日PCT PCT。出版物WO98 / 15664 日期：1998年04月16日一种能够容易地除去钢水的碳成分的钢水精炼装置及其制造方法，可以有效地降低钢水的温度下降，实现稳定的运转。用于精炼用于制造超低碳钢的钢水的设备包括由容器和由上腿和下腿组成的浮潜的RH真空脱气装置。该装置还包括多个气体喷射喷枪喷嘴，每个喷嘴喷枪喷嘴各自由内管和外管组成，并且安装在RH真空脱气装置的容器的侧壁上，以将气体注入容器内的钢水。内管包括用于形成超声速喷射流的喉部，外管注入用于冷却内管的冷却气体。

9. 发明授权

US5901135A Signal constellation time division multiplexing arrangement 失效
标题翻译：信号星座时分复用布置
公开(公告)号：US5901135A
公开(公告)日：1999-05-04
申请号：US808703
申请日：1997-02-28
申请人： Hong Yang Chung , Massimo Sorbara
发明人： Hong Yang Chung , Massimo Sorbara
IPC分类号： H03M13/00 , H03M13/23 , H04L1/00 , H04L27/00 , H04L27/34 , H04J3/22
CPC分类号： H04L27/3433 , H04L27/34
摘要： Data to be transmitted is converted into symbols using a plurality of data-to-symbol conversion processes. The symbols from these processes are then time-division multiplexed. Advantageously, at least one of these conversion processes incorporate coding in a manner which provides the same degree of error protection for each process. In the disclosed embodiments, the data originates from two independent sources and the data from each source is converted into symbols using a different data-to-symbol conversion process.
摘要翻译：要发送的数据使用多个数据到符号转换处理转换成符号。然后来自这些处理的符号被时分复用。有利地，这些转换过程中的至少一个以对每个处理提供相同程度的错误保护的方式并入编码。在所公开的实施例中，数据源自两个独立的源，并且使用不同的数据到符号转换处理将来自每个源的数据转换成符号。

10. 发明授权

US09997384B2 Methods for transporting wafers between wafer holders and chambers 有权
公开(公告)号：US09997384B2
公开(公告)日：2018-06-12
申请号：US13309283
申请日：2011-12-01
申请人： Shao-Yen Ku , Ming-Jung Chen , Tzu Yang Chung , Chi-Yun Tseng , Rui-Ping Chuang
发明人： Shao-Yen Ku , Ming-Jung Chen , Tzu Yang Chung , Chi-Yun Tseng , Rui-Ping Chuang
IPC分类号： H01L21/67
CPC分类号： H01L21/67201
摘要： An apparatus comprises a process chamber, and a loadlock connected to the process chamber. The loadlock is configured to have a wafer holder disposed therein. The wafer holder is configured to store a plurality of wafers, and is configured to transport the plurality of wafers away from the loadlock.

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