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1. 发明授权

US07256093B2 Method of forming a recessed buried-diffusion device 有权
标题翻译：形成埋入式扩散装置的方法
公开(公告)号：US07256093B2
公开(公告)日：2007-08-14
申请号：US11248786
申请日：2005-10-11
申请人： Chiu Hung Yu , Yang Chung-Heng , Wu Lin-June
发明人： Chiu Hung Yu , Yang Chung-Heng , Wu Lin-June
IPC分类号： H01L21/336
CPC分类号： H01L29/6656 , H01L29/665 , H01L29/6659 , H01L29/66636 , H01L29/7834
摘要： A method of forming a device (and the device so formed) comprising the following steps. A structure having a gate structure formed thereover is provided. Respective low doped drains are formed within the structure at least adjacent to the gate structure. A pocket implant is formed within the structure. The structure adjacent the gate structure is etched to form respective trenches having exposed side walls. Respective first liner structures are formed at least over the exposed side walls of trenches. Respective second liner structures are formed over the first liner structures. Source/drain implants are formed adjacent to, and outboard of, second liner structures to complete formation of device.
摘要翻译：一种形成装置（以及如此形成的装置）的方法，包括以下步骤。提供具有形成在其上的栅极结构的结构。在结构内形成至少与栅极结构相邻的各种低掺杂漏极。在结构内形成袋状植入物。蚀刻与栅极结构相邻的结构以形成具有暴露侧壁的相应沟槽。至少在沟槽的暴露的侧壁上形成相应的第一衬里结构。在第一衬里结构上形成相应的第二衬里结构。源/漏植入物邻近第二衬里结构并且在其外侧形成以完成器件的形成。

2. 发明授权

US06975000B2 Method of forming a recessed buried-diffusion device 失效
标题翻译：形成埋入式扩散装置的方法
公开(公告)号：US06975000B2
公开(公告)日：2005-12-13
申请号：US10820390
申请日：2004-04-08
申请人： Chiu-Hung Yu , Yang Chung-Heng , Wu Lin-June
发明人： Chiu-Hung Yu , Yang Chung-Heng , Wu Lin-June
IPC分类号： H01L21/00 , H01L21/336 , H01L29/76 , H01L29/78 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/6656 , H01L29/665 , H01L29/6659 , H01L29/66636 , H01L29/7834
摘要： A method of forming a device (and the device so formed) comprising the following steps. A structure having a gate structure formed thereover is provided. Respective low doped drains are formed within the structure at least adjacent to the gate structure. A pocket implant is formed within the structure. The structure adjacent the gate structure is etched to form respective trenches having exposed side walls. Respective first liner structures are formed at least over the exposed side walls of trenches. Respective second liner structures are formed over the first liner structures. Source/drain implants are formed adjacent to, and outboard of, second liner structures to complete formation of device.
摘要翻译：一种形成装置（以及如此形成的装置）的方法，包括以下步骤。提供具有形成在其上的栅极结构的结构。在结构内形成至少与栅极结构相邻的各种低掺杂漏极。在结构内形成袋状植入物。蚀刻与栅极结构相邻的结构以形成具有暴露侧壁的相应沟槽。至少在沟槽的暴露的侧壁上形成相应的第一衬里结构。在第一衬里结构上形成相应的第二衬里结构。源/漏植入物邻近第二衬里结构并且在其外侧形成以完成器件的形成。

3. 发明申请

US20050224873A1 METHOD OF FORMING A RECESSED BURIED-DIFFUSION DEVICE 失效
标题翻译：形成受阻扩张装置的方法
公开(公告)号：US20050224873A1
公开(公告)日：2005-10-13
申请号：US10820390
申请日：2004-04-08
申请人： Chiu-Hung Yu , Yang Chung-Heng , Wu Lin-June
发明人： Chiu-Hung Yu , Yang Chung-Heng , Wu Lin-June
IPC分类号： H01L21/00 , H01L21/336 , H01L29/76 , H01L29/78 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/6656 , H01L29/665 , H01L29/6659 , H01L29/66636 , H01L29/7834
摘要： A method of forming a device (and the device so formed) comprising the following steps. A structure having a gate structure formed thereover is provided. Respective low doped drains are formed within the structure at least adjacent to the gate structure. A pocket implant is formed within the structure. The structure adjacent the gate structure is etched to form respective trenches having exposed side walls. Respective first liner structures are formed at least over the exposed side walls of trenches. Respective second liner structures are formed over the first liner structures. Source/drain implants are formed adjacent to, and outboard of, second liner structures to complete formation of device.
摘要翻译：一种形成装置（以及如此形成的装置）的方法，包括以下步骤。提供具有形成在其上的栅极结构的结构。在结构内形成至少与栅极结构相邻的各种低掺杂漏极。在结构内形成袋状植入物。蚀刻与栅极结构相邻的结构以形成具有暴露侧壁的相应沟槽。至少在沟槽的暴露的侧壁上形成相应的第一衬里结构。在第一衬里结构上形成相应的第二衬里结构。源/漏植入物邻近第二衬里结构并且在其外侧形成以完成器件的形成。

4. 发明申请

US20060027866A1 Method of forming a recessed buried-diffusion device 有权
标题翻译：形成埋入式扩散装置的方法
公开(公告)号：US20060027866A1
公开(公告)日：2006-02-09
申请号：US11248786
申请日：2005-10-11
申请人： Chiu-Hung Yu , Yang Chung-Heng , Wu Lin-June
发明人： Chiu-Hung Yu , Yang Chung-Heng , Wu Lin-June
IPC分类号： H01L29/76
CPC分类号： H01L29/6656 , H01L29/665 , H01L29/6659 , H01L29/66636 , H01L29/7834
摘要： A method of forming a device (and the device so formed) comprising the following steps. A structure having a gate structure formed thereover is provided. Respective low doped drains are formed within the structure at least adjacent to the gate structure. A pocket implant is formed within the structure. The structure adjacent the gate structure is etched to form respective trenches having exposed side walls. Respective first liner structures are formed at least over the exposed side walls of trenches. Respective second liner structures are formed over the first liner structures. Source/drain implants are formed adjacent to, and outboard of, second liner structures to complete formation of device.
摘要翻译：一种形成装置（以及如此形成的装置）的方法，包括以下步骤。提供具有形成在其上的栅极结构的结构。在结构内形成至少与栅极结构相邻的各种低掺杂漏极。在结构内形成袋状植入物。蚀刻与栅极结构相邻的结构以形成具有暴露侧壁的相应沟槽。至少在沟槽的暴露的侧壁上形成相应的第一衬里结构。在第一衬里结构上形成相应的第二衬里结构。源/漏植入物邻近第二衬里结构并且在其外侧形成以完成器件的形成。

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