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1. 发明授权

US07579042B2 Methods for the fabrication of thermally stable magnetic tunnel junctions 有权
标题翻译：用于制造热稳定磁隧道结的方法
公开(公告)号：US07579042B2
公开(公告)日：2009-08-25
申请号：US10902281
申请日：2004-07-29
申请人： Y. Austin Chang , Jianhua J. Yang , Peter F. Ladwig
发明人： Y. Austin Chang , Jianhua J. Yang , Peter F. Ladwig
IPC分类号： C23C16/00 , B05D3/00
CPC分类号： H01L43/12 , H01L27/224 , Y10T29/49002 , Y10T29/49021
摘要： Magnetic tunnel junctions and method for making the magnetic tunnel junctions are provided. The magnetic tunnel junctions are characterized by a tunnel barrier oxide layer sandwiched between two ferromagnetic layers. The methods used to fabricate the magnetic tunnel junctions are capable of completely and selectively oxidizing a tunnel junction precursor material using an oxidizing gas containing a mixture of gases to provide a tunnel junction oxide without oxidizing the adjacent ferromagnetic materials. In some embodiments the gas mixture is a mixture of CO and CO2 or a mixture of H2 and H2O.
摘要翻译：提供磁隧道结以及制造磁隧道结的方法。磁隧道结的特征在于夹在两个铁磁层之间的隧道势垒氧化层。用于制造磁隧道结的方法能够使用包含气体混合物的氧化气体完全和选择性地氧化隧道结前体材料，以提供隧道结氧化物而不氧化相邻的铁磁材料。在一些实施方案中，气体混合物是CO和CO 2的混合物或H 2和H 2 O的混合物。

2. 发明授权

US07450352B2 Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers 有权
标题翻译：具有外延和纹理铁磁层的磁隧道结的制造
公开(公告)号：US07450352B2
公开(公告)日：2008-11-11
申请号：US11169320
申请日：2005-06-28
申请人： Y. Austin Chang , Jianhua Joshua Yang
发明人： Y. Austin Chang , Jianhua Joshua Yang
IPC分类号： G11B5/33 , G11B5/39 , G11B5/127
CPC分类号： G01R33/07 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11C11/16 , H01L43/08 , H01L43/12
摘要： This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.
摘要翻译：本发明涉及磁隧道结以及制造磁隧道结的方法。磁隧道结包括夹在两个铁磁层之间的隧道势垒氧化物层，两个铁磁层相对于其上生长磁隧道结的下面的基底是外延的或织构的。磁隧道结提供了改善的磁性，界面更清晰，缺陷少。

3. 发明授权

US07368023B2 Zirconium-rich bulk metallic glass alloys 有权
标题翻译：富锆块状金属玻璃合金
公开(公告)号：US07368023B2
公开(公告)日：2008-05-06
申请号：US10963413
申请日：2004-10-12
申请人： Y. Austin Chang , Hongbo Cao , Dong Ma , Ling Ding , Ker-chang Hsieh
发明人： Y. Austin Chang , Hongbo Cao , Dong Ma , Ling Ding , Ker-chang Hsieh
IPC分类号： C22C45/10
CPC分类号： C22C45/10
摘要： Zirconium-rich bulk metallic glass alloys include quinary alloys containing zirconium, aluminum, titanium, copper and nickel. The bulk metallic glass alloys may be provided as completely amorphous pieces having cross-sectional diameters of at least about 5 mm or even greater.
摘要翻译：富含锆的块状金属玻璃合金包括含有锆，铝，钛，铜和镍的二元合金。块状金属玻璃合金可以被提供为具有至少约5mm或甚至更大截面直径的完全非晶片。

4. 发明授权

US5516725A Process for preparing schottky diode contacts with predetermined barrier heights 失效
标题翻译：制备具有预定屏障高度的肖特基二极管触点的工艺
公开(公告)号：US5516725A
公开(公告)日：1996-05-14
申请号：US85622
申请日：1993-06-30
申请人： Y. Austin Chang , Chia-Hong Jan , Chia-Ping Chen
发明人： Y. Austin Chang , Chia-Hong Jan , Chia-Ping Chen
IPC分类号： C22C5/04 , C22C19/00 , C23C14/14 , C23C14/18 , C23C14/34 , H01L21/28 , H01L21/285 , H01L21/768 , H01L23/522 , H01L29/40 , H01L29/47 , H01L21/44
CPC分类号： C23C14/185 , C22C19/00 , C22C5/04 , H01L29/475 , H01L2924/0002
摘要： A process is provided for producing a Schottky diode having a preselected barrier height .phi..sub.Bn. The substrate is preferably n-GaAs, the metallic contact is derived from a starting alloy of the Formula [.SIGMA.M.sub..delta. ](Al.sub.x Ga.sub.1-x) wherein: .SIGMA.M is a moiety which consists of at least one M, and when more than one M is present, each M is different, M is a Group VIII metal selected from the group consisting of nickel, cobalt, ruthenium, rhodium, indium and platinum, .delta. is a stoichiometric coefficient whose total value in any given .SIGMA.M moiety is 1, and x is a positive number between 0 and 1 (that is, x ranges from greater than 0 to less than 1). Also, the starting alloy is capable of forming with the substrate a two phase equilibrium reciprocal system of the binary alloy mixture [.SIGMA.M.sub..delta. ]Ga-[.SIGMA.M.sub..delta. ]Al-AlAs-GaAs. When members of an alloy subclass within this Formula are each preliminarily correlated with the barrier height .phi..sub.Bn of a contact producable therewith, then Schottky diodes of predetermined barrier heights are producable by sputtering and annealing. Further provided are the product Schottky diodes that are produced according to this process.
摘要翻译：提供了一种制备具有预先选择的势垒高度phi Bn的肖特基二极管的工艺。衬底优选为n-GaAs，金属接触源自式[SIGMA Mδ]（Al x Ga 1-x）的起始合金，其中：SIGMA M是由至少一个M组成的部分，并且当多于一个 M存在，每个M不同，M是选自镍，钴，钌，铑，铟和铂的Ⅷ族金属，δ是任何给定的SIGMA M部分的总值为1的化学计量系数， x是0和1之间的正数（即x大于0到小于1）。此外，起始合金能够与基板一起形成二元合金混合物[SIGMA Mδ] Ga - [SIGMA M] Al-AlAs-GaAs的两相平衡互易系统。当该式中的合金子类的成员各自与可生产的接触层的势垒高度phi Bn初步相关时，则可以通过溅射和退火产生预定的屏障高度的肖特基二极管。还提供了根据该方法生产的肖特基二极管产品。

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