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1. 发明授权

US08563429B2 Methods of forming a metal silicide layer for semiconductor devices 失效
标题翻译：形成用于半导体器件的金属硅化物层的方法
公开(公告)号：US08563429B2
公开(公告)日：2013-10-22
申请号：US12704873
申请日：2010-02-12
申请人： Won-Goo Hur , Kyu-Tae Na , Min Kim , Hyun-Young Kim , Je-Hyeon Park
发明人： Won-Goo Hur , Kyu-Tae Na , Min Kim , Hyun-Young Kim , Je-Hyeon Park
IPC分类号： H01L21/44 , H01L21/302 , H01L21/461 , H01L21/336 , H01L21/8234 , H01L21/8238
CPC分类号： H01L27/11524 , H01L29/665 , H01L29/66825
摘要： Methods of forming a metal silicide layer are provided that include exposing polysilicon through just dry etching (JDE) and recessesing an oxide layer through chemical dry etching (CDE). In particular, dry etching is primarily performed to an extent to expose the polysilicon. Then, CDE is secondarily performed to expose the polysilicon. The CDE process includes selecting an etchant source among combinations of NF3 and NH3, HF and NH3, and N2, H2, and NF3, dissociating the etchant source, forming an etchant of NH4F and NH4F.HF through the dissociation, producing solid by-products of (NH4)2SiF6 through the reaction between the etchant and an oxide at a low temperature, and annealing the by-products at a high temperature such that the by-products are sublimated into gas-phase SiF4, NH3, and HF.
摘要翻译：提供了形成金属硅化物层的方法，其包括通过刚刚干蚀刻（JDE）暴露多晶硅并通过化学干蚀刻（CDE）凹陷氧化物层。特别地，干蚀刻主要在暴露多晶硅的程度上进行。然后，再次执行CDE以暴露多晶硅。 CDE方法包括在NF3和NH3，HF和NH3以及N2，H2和NF3的组合中选择蚀刻源，解离蚀刻剂源，通过解离形成NH4F和NH4F.HF的蚀刻剂，产生固体副产物的（NH 4）2 SiF 6通过蚀刻剂和氧化物在低温下的反应，并在高温下退火副产物，使得副产物升华成气相SiF 4，NH 3和HF。

2. 发明申请

US20130029445A1 METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20130029445A1
公开(公告)日：2013-01-31
申请号：US13558051
申请日：2012-07-25
申请人： Gi Bum KIM , Won Goo HUR , Seung Woo CHOI , Seung Jae LEE , Si Hyuk LEE , Tae Hun KIM
发明人： Gi Bum KIM , Won Goo HUR , Seung Woo CHOI , Seung Jae LEE , Si Hyuk LEE , Tae Hun KIM
IPC分类号： H01L33/02
CPC分类号： H01L33/007 , H01L33/0095 , H01L33/20
摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: preparing a substrate including first and second main surfaces opposing each other; forming a plurality of protruding parts in the first main surface of the substrate; forming a light emitting stack on the first main surface on which the plurality of protruding parts are formed; forming a plurality of light emitting structures by removing portions of the light emitting stack formed in regions corresponding to groove parts around the plurality of protruding parts; and separating the substrate along the groove parts.
摘要翻译：提供一种制造半导体发光器件的方法，该方法包括：制备包括彼此相对的第一和第二主表面的衬底; 在基板的第一主表面上形成多个突出部分; 在形成有所述多个突出部的所述第一主表面上形成发光层; 通过去除形成在与所述多个突出部分周围的槽部分相对应的区域中的所述发光堆叠的部分来形成多个发光结构; 以及沿着所述凹槽部分分离所述基底。

3. 发明申请

US20100210099A1 METHODS OF FORMING A METAL SILICIDE LAYER FOR SEMICONDUCTOR DEVICES 失效
标题翻译：形成用于半导体器件的金属硅化物层的方法
公开(公告)号：US20100210099A1
公开(公告)日：2010-08-19
申请号：US12704873
申请日：2010-02-12
申请人： Won-Goo Hur , Kyu-Tae Na , Min Kim , Hyun-Young Kim , Je-Hyeon Park
发明人： Won-Goo Hur , Kyu-Tae Na , Min Kim , Hyun-Young Kim , Je-Hyeon Park
IPC分类号： H01L21/28 , H01L21/285
CPC分类号： H01L27/11524 , H01L29/665 , H01L29/66825
摘要： Methods of forming a metal silicide layer are provided that include exposing polysilicon through just dry etching (JDE) and recessesing an oxide layer through chemical dry etching (CDE). In particular, dry etching is primarily performed to an extent to expose the polysilicon. Then, CDE is secondarily performed to expose the polysilicon. The CDE process includes selecting an etchant source among combinations of NF3 and NH3, HF and NH3, and N2, H2, and NF3, dissociating the etchant source, forming an etchant of NH4F and NH4F.HF through the dissociation, producing solid by-products of (NH4)2SiF6 through the reaction between the etchant and an oxide at a low temperature, and annealing the by-products at a high temperature such that the by-products are sublimated into gas-phase SiF4, NH3, and HF.
摘要翻译：提供了形成金属硅化物层的方法，其包括通过刚刚干蚀刻（JDE）暴露多晶硅并通过化学干蚀刻（CDE）凹陷氧化物层。特别地，干蚀刻主要在暴露多晶硅的程度上进行。然后，再次执行CDE以暴露多晶硅。 CDE方法包括在NF3和NH3，HF和NH3以及N2，H2和NF3的组合中选择蚀刻源，解离蚀刻剂源，通过解离形成NH4F和NH4F.HF的蚀刻剂，产生固体副产物的（NH 4）2 SiF 6通过蚀刻剂和氧化物在低温下的反应，并且在高温下退火副产物，使得副产物升华成气相SiF 4，NH 3和HF。

4. 发明申请

US20120025246A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120025246A1
公开(公告)日：2012-02-02
申请号：US13167396
申请日：2011-06-23
申请人： Tae Hun KIM , Gi Bum KIM , Won Goo HUR , Young Sun KIM , Ki Sung KIM
发明人： Tae Hun KIM , Gi Bum KIM , Won Goo HUR , Young Sun KIM , Ki Sung KIM
IPC分类号： H01L33/58 , B82Y40/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L2933/0091
摘要： Disclosed are a semiconductor light emitting device and a method of manufacturing the same. The method includes providing a substrate having first and second main surfaces opposing each other and forming a first uneven structure in the first main surface, forming a sacrificial layer on the first main surface of the substrate, forming a mask having open regions on the sacrificial layer so as to expose a portion of an upper surface of the sacrificial layer, forming a second uneven structure in the substrate by etching the sacrificial layer and the substrate through the open regions, removing the sacrificial layer and the mask from the substrate, and forming a light emitting stack on the first and second uneven structures of the substrate.
摘要翻译：公开了一种半导体发光器件及其制造方法。该方法包括提供具有彼此相对的第一和第二主表面的衬底，并且在第一主表面中形成第一不平坦结构，在衬底的第一主表面上形成牺牲层，在牺牲层上形成具有开放区域的掩模以便暴露牺牲层的上表面的一部分，通过通过开放区域蚀刻牺牲层和衬底，在衬底中形成第二不均匀结构，从衬底去除牺牲层和掩模，并形成发光堆叠在基板的第一和第二不平坦结构上。

5. 发明申请

US20080179746A1 WIRING STRUCTURES OF SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME 审中-公开
标题翻译：半导体器件的布线结构及其形成方法
公开(公告)号：US20080179746A1
公开(公告)日：2008-07-31
申请号：US12017538
申请日：2008-01-22
申请人： Won-Goo Hur , Dong-Kyun Park , Je-Hyeon Park , Young-Joo Cho , Kyu-Tae Na
发明人： Won-Goo Hur , Dong-Kyun Park , Je-Hyeon Park , Young-Joo Cho , Kyu-Tae Na
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L21/76838 , H01L21/28556 , H01L21/28562 , H01L21/76877 , H01L27/10885 , H01L27/10888 , H01L27/11521
摘要： A wiring structure of a semiconductor device comprises an insulating interlayer, a plug and a conductive pattern. The insulating interlayer has an opening therethrough on a substrate. The plug includes tungsten and fills up the opening. The plug is formed by a deposition process using a reaction of a source gas. A conductive pattern structure makes contact with the plug and includes a first tungsten layer pattern and a second tungsten layer pattern. The first tungsten layer pattern is formed by the deposition process. The second tungsten layer pattern is formed by a physical vapor deposition (PVD) process.
摘要翻译：半导体器件的布线结构包括绝缘中间层，插头和导电图案。绝缘中间层在基板上具有穿过其的开口。插头包括钨并填满开口。插塞通过使用源气体的反应的沉积工艺形成。导电图案结构与插头接触并且包括第一钨层图案和第二钨层图案。第一钨层图案通过沉积工艺形成。第二钨层图案通过物理气相沉积（PVD）工艺形成。

6. 发明申请

US20140197026A1 SPUTTERING APPARATUS AND METHOD FOR FORMING A TRANSMISSIVE CONDUCTIVE LAYER OF A LIGHT EMITTING DEVICE 审中-公开
标题翻译：用于形成发光装置的透射导电层的溅射装置和方法
公开(公告)号：US20140197026A1
公开(公告)日：2014-07-17
申请号：US14239109
申请日：2011-08-17
申请人： Young Chul Shin , Gi Bum Kim , Won Goo Hur
发明人： Young Chul Shin , Gi Bum Kim , Won Goo Hur
IPC分类号： H01J37/34
CPC分类号： H01J37/3411 , C23C14/0641 , C23C14/34 , H01L31/1884 , H01L33/42 , Y02E10/50
摘要： There is provided a method for manufacturing a nitride semiconductor light emitting device, including: forming a light emitting structure including first and second conductive nitride semiconductor layers on a substrate and an active layer formed therebetween; forming the first conductive nitride semiconductor layer, the active layer, and the second conductive nitride semiconductor layer in sequence; forming a first electrode connected to the first conductive nitride semiconductor layer; forming a photo-resist layer on the second conductive nitride semiconductor layer so as to expose a portion of the semiconductor layer; and removing the photo-resist layer after a reflective metal layer and a barrier metal layer serving as a second electrode structure are successively formed on the second conductive nitride semiconductor layer exposed by the photo-resist layer.
摘要翻译：提供了一种用于制造氮化物半导体发光器件的方法，包括：在衬底上形成包括第一和第二导电氮化物半导体层的发光结构和在其间形成的有源层; 依次形成第一导电氮化物半导体层，有源层和第二导电氮化物半导体层; 形成连接到所述第一导电氮化物半导体层的第一电极; 在所述第二导电氮化物半导体层上形成光致抗蚀剂层，以暴露所述半导体层的一部分; 并且在用作第二电极结构的反射金属层和阻挡金属层之后依次形成在由光致抗蚀剂层暴露的第二导电氮化物半导体层上，去除光致抗蚀剂层。

7. 发明申请

US20120107987A1 METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20120107987A1
公开(公告)日：2012-05-03
申请号：US13286834
申请日：2011-11-01
申请人： Won Goo HUR , Young Chul SHIN , Gi Bum KIM , Seung Woo CHOI
发明人： Won Goo HUR , Young Chul SHIN , Gi Bum KIM , Seung Woo CHOI
IPC分类号： H01L33/02
CPC分类号： H01L33/42 , H01L33/025 , H01L2933/0016
摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: forming a light emitting structure by sequentially growing an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a transparent electrode on the p-type nitride semiconductor layer through a sputtering process; and forming a nitrogen gas atmosphere in an interior of a reaction chamber in which the sputtering process is performed, prior to or during the sputtering process.In the case of the semiconductor light emitting device obtained according to embodiments of the invention, a deterioration phenomenon in electrode characteristics caused due to a nitrogen vacancy may be minimized in manufacturing a transparent electrode through a sputtering process to thereby allow for the provision of a transparent electrode having significantly improved electrical characteristics.
摘要翻译：提供一种制造半导体发光器件的方法，该方法包括：通过在衬底上依次生长n型氮化物半导体层，有源层和p型氮化物半导体层来形成发光结构; 通过溅射法在p型氮化物半导体层上形成透明电极; 以及在溅射工艺之前或期间在其中进行溅射工艺的反应室的内部形成氮气气氛。在根据本发明的实施例获得的半导体发光器件的情况下，由于氮空位引起的电极特性的劣化现象在通过溅射工艺制造透明电极时可能被最小化，从而允许提供透明电极具有显着改善的电特性。

8. 发明授权

US6077772A Methods of forming metal interconnections including thermally treated barrier layers 有权
标题翻译：形成包括热处理阻挡层的金属互连的方法
公开(公告)号：US6077772A
公开(公告)日：2000-06-20
申请号：US270174
申请日：1999-03-16
申请人： In-Seon Park , Sung-Tae Kim , Du-Hwan Lee , Won-Goo Hur
发明人： In-Seon Park , Sung-Tae Kim , Du-Hwan Lee , Won-Goo Hur
IPC分类号： H01L21/768 , H01L21/4763
CPC分类号： H01L21/76856 , H01L21/76843 , H01L21/76882
摘要： A method of forming a metal interconnection includes the steps of forming a first conductive layer on a substrate, and forming an insulating layer on the first conductive layer and on the substrate. A contact hole is formed in the insulating layer thereby exposing a portion of the first conductive layer, a barrier layer is formed on the exposed portion of the first conductive layer in the contact hole, and a thermal treatment is performed on the barrier layer. After the step of performing the thermal treatment, a wetting layer is formed on a sidewall of the contact hole, and a second conductive layer is formed on the barrier layer and on the wetting layer in the contact hole.
摘要翻译：形成金属互连的方法包括以下步骤：在衬底上形成第一导电层，并在第一导电层和衬底上形成绝缘层。在绝缘层中形成接触孔，从而露出第一导电层的一部分，在接触孔中的第一导电层的暴露部分上形成阻挡层，并对阻挡层进行热处理。在进行热处理的步骤之后，在接触孔的侧壁上形成润湿层，并且在阻挡层和接触孔中的润湿层上形成第二导电层。

9. 发明授权

US09172000B2 Semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09172000B2
公开(公告)日：2015-10-27
申请号：US13167396
申请日：2011-06-23
申请人： Tae Hun Kim , Gi Bum Kim , Won Goo Hur , Young Sun Kim , Ki Sung Kim
发明人： Tae Hun Kim , Gi Bum Kim , Won Goo Hur , Young Sun Kim , Ki Sung Kim
IPC分类号： H01L21/00 , H01L51/40 , H01L33/22 , H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L2933/0091
摘要： Disclosed are a semiconductor light emitting device and a method of manufacturing the same. The method includes providing a substrate having first and second main surfaces opposing each other and forming a first uneven structure in the first main surface, forming a sacrificial layer on the first main surface of the substrate, forming a mask having open regions on the sacrificial layer so as to expose a portion of an upper surface of the sacrificial layer, forming a second uneven structure in the substrate by etching the sacrificial layer and the substrate through the open regions, removing the sacrificial layer and the mask from the substrate, and forming a light emitting stack on the first and second uneven structures of the substrate.
摘要翻译：公开了一种半导体发光器件及其制造方法。该方法包括提供具有彼此相对的第一和第二主表面的衬底，并且在第一主表面中形成第一不平坦结构，在衬底的第一主表面上形成牺牲层，在牺牲层上形成具有开放区域的掩模以便暴露牺牲层的上表面的一部分，通过通过开放区域蚀刻牺牲层和衬底，在衬底中形成第二不均匀结构，从衬底去除牺牲层和掩模，并形成发光堆叠在基板的第一和第二不平坦结构上。

10. 发明授权

US08409896B2 Method of manufacturing semiconductor light emitting device 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：US08409896B2
公开(公告)日：2013-04-02
申请号：US13286834
申请日：2011-11-01
申请人： Won Goo Hur , Young Chul Shin , Gi Bum Kim , Seung Woo Choi
发明人： Won Goo Hur , Young Chul Shin , Gi Bum Kim , Seung Woo Choi
IPC分类号： H01L21/00
CPC分类号： H01L33/42 , H01L33/025 , H01L2933/0016
摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: forming a light emitting structure by sequentially growing an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a transparent electrode on the p-type nitride semiconductor layer through a sputtering process; and forming a nitrogen gas atmosphere in an interior of a reaction chamber in which the sputtering process is performed, prior to or during the sputtering process.In the case of the semiconductor light emitting device obtained according to embodiments of the invention, a deterioration phenomenon in electrode characteristics caused due to a nitrogen vacancy may be minimized in manufacturing a transparent electrode through a sputtering process to thereby allow for the provision of a transparent electrode having significantly improved electrical characteristics.
摘要翻译：提供一种制造半导体发光器件的方法，该方法包括：通过在衬底上依次生长n型氮化物半导体层，有源层和p型氮化物半导体层来形成发光结构; 通过溅射工艺在p型氮化物半导体层上形成透明电极; 以及在溅射工艺之前或期间在其中进行溅射工艺的反应室的内部形成氮气气氛。在根据本发明的实施例获得的半导体发光器件的情况下，由于氮空位引起的电极特性的劣化现象在通过溅射工艺制造透明电极时可能被最小化，从而允许提供透明电极具有显着改善的电特性。

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