专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06274492B1 Process and device for production of metallic coatings on semiconductor structures 失效
标题翻译：在半导体结构上生产金属涂层的工艺和装置
公开(公告)号：US06274492B1
公开(公告)日：2001-08-14
申请号：US09194370
申请日：1999-01-03
申请人： Wolfgang Klimes , Christian Wenzel , Norbert Urbansky , Peter Siemroth , Thomas Shuelke , Bernd Schultrich
发明人： Wolfgang Klimes , Christian Wenzel , Norbert Urbansky , Peter Siemroth , Thomas Shuelke , Bernd Schultrich
IPC分类号： H01L21314
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/325 , H01L21/76877
摘要： The invention relates to a process and a device for metallization of semiconductor structures, with which areas of the surface can be connected to be electrically conductive using strip conductors in one or a plurality of planes, and contacts between the strip conductors of different planes. The process for producing metallic coatings on semiconductor structures by depositing from a vapor phase under vacuum, in trenches produced for the strip conductors and holes for strip conductor connection in the substrate material such as SiO2 or other inorganic and organic materials is characterized in that a known per se pulsed vacuum-arc evaporator is used, a barrier layer being deposited on the surface of the trenches and holes of the substrates using the plasma of the evaporator and/or the trenches and holes being filled with low-impedance strip conductor material from a further plasma of said type of evaporator. The invention describes a device for carrying out the process which can be used, along with the device, to metal-coat trenches and holes with a high aspect ratio without hollow spaces.
摘要翻译：本发明涉及用于半导体结构金属化的方法和装置，其中可以使用一个或多个平面中的带状导体将该表面的区域连接成导电，以及不同平面的带状导体之间的接触。通过在真空下的气相沉积在用于带状导体的沟槽中形成半导体结构上的金属涂层的方法以及诸如SiO 2或其它无机和有机材料的衬底材料中的带状导体连接的孔的特征在于已知本身使用脉冲真空电弧蒸发器，使用蒸发器的等离子体和/或沟槽和孔填充低阻抗带状导体材料的方法，将阻挡层沉积在衬底的沟槽和孔的表面上，所述类型蒸发器的进一步等离子体。本发明描述了一种用于实施该方法的装置，该装置可以与该装置一起使用，以高纵横比的金属覆盖沟槽和孔而没有中空空间。

IPRDB

热门服务

关于我们

友情链接

联系方式