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    • 1. 发明授权
    • Semiconductor device fabricating method
    • 半导体器件制造方法
    • US07759245B2
    • 2010-07-20
    • US11948932
    • 2007-11-30
    • Yun-Sheng LiuWen-Chung Chen
    • Yun-Sheng LiuWen-Chung Chen
    • H01L21/4763
    • H01L21/28518H01L21/823443H01L27/105H01L27/112H01L27/11206H01L27/11286
    • A semiconductor device fabricating method is described. The semiconductor device fabricating method comprises providing a substrate with a logic device region and a memory device region. A logic device with a first silicide region and a first silicide block region and a memory device with a second silicide region and a second silicide block region are formed in the logic device region and the memory device region, respectively. A first insulating layer is formed covering the first and second silicide block regions. A silicide process is performed to form a silicide layer on the first and second silicide regions. An underlying second insulating layer and an insulating barrier layer are formed covering the first insulating layer and the silicide layer.
    • 描述半导体器件制造方法。 半导体器件制造方法包括向基板提供逻辑器件区域和存储器件区域。 分别在逻辑器件区域和存储器件区域中分别形成具有第一硅化物区域和第一硅化物块区域的逻辑器件以及具有第二硅化物区域和第二硅化物块区域的存储器件。 形成覆盖第一和第二硅化物块区域的第一绝缘层。 执行硅化处理以在第一和第二硅化物区域上形成硅化物层。 形成覆盖第一绝缘层和硅化物层的下面的第二绝缘层和绝缘阻挡层。
    • 3. 发明申请
    • SEMICONDUCTOR DEVICE FABRICATING METHOD
    • 半导体器件制造方法
    • US20090142918A1
    • 2009-06-04
    • US11948932
    • 2007-11-30
    • Yun-Sheng LiuWen-Chung Chen
    • Yun-Sheng LiuWen-Chung Chen
    • H01L21/4763
    • H01L21/28518H01L21/823443H01L27/105H01L27/112H01L27/11206H01L27/11286
    • A semiconductor device fabricating method is described. The semiconductor device fabricating method comprises providing a substrate with a logic device region and a memory device region. A logic device with a first silicide region and a first silicide block region and a memory device with a second silicide region and a second silicide block region are formed in the logic device region and the memory device region, respectively. A first insulating layer is formed covering the first and second silicide block regions. A silicide process is performed to form a silicide layer on the first and second silicide regions. An underlying second insulating layer and an insulating barrier layer are formed covering the first insulating layer and the silicide layer.
    • 描述半导体器件制造方法。 半导体器件制造方法包括向基板提供逻辑器件区域和存储器件区域。 分别在逻辑器件区域和存储器件区域中分别形成具有第一硅化物区域和第一硅化物块区域的逻辑器件以及具有第二硅化物区域和第二硅化物块区域的存储器件。 形成覆盖第一和第二硅化物块区域的第一绝缘层。 执行硅化处理以在第一和第二硅化物区域上形成硅化物层。 形成覆盖第一绝缘层和硅化物层的下面的第二绝缘层和绝缘阻挡层。
    • 4. 发明申请
    • DEVICE FOR SIMULATING RECTIFIED CONSTANT IMPEDANCE LOAD AND METHOD THEREOF
    • 用于模拟整流的恒定阻抗负载的装置及其方法
    • US20090091958A1
    • 2009-04-09
    • US12244346
    • 2008-10-02
    • Hung-Hsiang KAOWen-Chung CHENKuo-Cheng LIUMing-Ying TSOU
    • Hung-Hsiang KAOWen-Chung CHENKuo-Cheng LIUMing-Ying TSOU
    • H02M7/00
    • G01R31/42G01R31/2848
    • The device for simulating a rectified constant impedance load provide by the present invention is to test a power product and comprises an analog-digital converter, a digital signal processor, a digital-analog converter, and an active electrical load module in order to replacing the passive components of a traditional rectified passive load. method for simulating a rectified constant impedance load being applied to test a power product and comprising the steps of: (S1) replacing the plurality of passive components of the rectified constant impedance load with a digital control module and an active electrical load module; (S2) establishing a passive load model function in order to represent the application relationships of the plurality of the passive components; (S3) executing the operation of the passive load model function by the digital control module in order to gain a load current value, and transferring the load current value to an analog control signal via the digital control module; and (S4) controlling the active electrical load module via the analog control signal so as to draw currents from the power product.
    • 本发明提供的用于模拟整流恒定阻抗负载的装置是测试功率产品,并且包括模拟数字转换器,数字信号处理器,数模转换器和有源电负载模块,以便更换 被动元件的传统整流被动负载。 用于模拟整流的恒定阻抗负载的方法,用于测试电力产品,并且包括以下步骤:(S1)用数字控制模块和有源电负载模块代替整流的恒定阻抗负载的多个无源部件; (S2)建立无源负载模型功能,以便表示多个无源组件的应用关系; (S3)通过数字控制模块执行无源负载模型功能的操作,以获得负载电流值,并通过数字控制模块将负载电流值传递给模拟控制信号; 和(S4)经由模拟控制信号控制有源电负载模块,以便从电力产品中抽取电流。
    • 6. 发明授权
    • Shared memory synchronization systems and methods
    • 共享内存同步系统和方法
    • US07430139B2
    • 2008-09-30
    • US11451079
    • 2006-06-12
    • Wen-Chung ChenJianming XuHuizhong OuChienkang ChengShou-Yu Joyce Cheng
    • Wen-Chung ChenJianming XuHuizhong OuChienkang ChengShou-Yu Joyce Cheng
    • G11C7/06
    • G11C7/1039G06F12/084
    • The present disclosure provides system and method embodiments for synchronizing access to memory between a plurality of modules in a pipelined system. One system embodiment, among others, includes an upstream module and a downstream module that each share one or more locations in memory. The upstream module is configured to receive a command pair having matched identifiers, one half (wait command) of which enables the upstream module to delay access to the memory to avoid read-after-write (RAW) hazard, the other half (signal command) which is passed to the downstream module. The downstream module passes the identifier from the signal command to the upstream module at a time corresponding to the downstream module reaching an idle state, thus ceasing access to the memory. The upstream module, upon determining that the identifier received over a direct connection from the downstream module is from the command pair, accesses the one or more locations in the memory.
    • 本公开提供了用于在流水线系统中的多个模块之间同步对存储器的访问的系统和方法实施例。 一个系统实施例包括上游模块和下游模块,每个模块在存储器中共享一个或多个位置。 上游模块被配置为接收具有匹配标识符的命令对,其一半(等待命令)使得上游模块能够延迟对存储器的访问以避免读写(RAW)危险,另一半(信号命令 )传递给下游模块。 下游模块在与下游模块相对应的时间到达空闲状态的时候,将信号命令中的标识符从信号命令传递到上游模块,从而停止对存储器的访问。 上游模块在确定通过来自下游模块的直接连接接收到的标识符来自命令对时,访问存储器中的一个或多个位置。
    • 8. 发明申请
    • Method and system for multiple GPU support
    • 支持多种GPU的方法和系统
    • US20070139423A1
    • 2007-06-21
    • US11300980
    • 2005-12-15
    • Dehai KongWen-Chung ChenPing ChenIrene (Chih-Yiieh) ChengTatsang MakXi LiuLi ZhangLi SunChenggang Liu
    • Dehai KongWen-Chung ChenPing ChenIrene (Chih-Yiieh) ChengTatsang MakXi LiuLi ZhangLi SunChenggang Liu
    • G06F15/16
    • G09G5/363
    • Supporting multiple graphics processing units (GPUs) comprises a first path coupled to a north bridge device (or a root complex device) and a first GPU, which may include a portion of the first GPU's total communication lanes. A second communication path may be coupled to the north bridge device and a second GPU and may include a portion of the second GPU's total communication lanes. A third communication path may be coupled between the first and second GPUs directly or through one or more switches that can be configured for single or multiple GPU operations. The third communication path may include some or all of the remaining communication lanes for the first and second GPUs. As a nonlimiting example, the first and second GPUs may each utilize an 8-lane PCI express communication path with the north bridge device and an 8-lane PCI express communication path with each other.
    • 支持多个图形处理单元(GPU)包括耦合到北桥设备(或根复杂设备)的第一路径和可以包括第一GPU总通信线路的一部分的第一GPU。 第二通信路径可以耦合到北桥设备和第二GPU,并且可以包括第二GPU的总通信线路的一部分。 第三通信路径可以直接地耦合在第一和第二GPU之间,或者通过一个或多个可以被配置用于单个或多个GPU操作的交换机。 第三通信路径可以包括用于第一和第二GPU的剩余通信线路中的一些或全部。 作为非限制性示例,第一和第二GPU可以各自利用与北桥设备的8通道PCI快速通信路径和彼此之间的8通道PCI快速通信路径。
    • 10. 发明申请
    • Buffering missed requests in processor caches
    • 缓冲处理器缓存中的未请求
    • US20070067572A1
    • 2007-03-22
    • US11229939
    • 2005-09-19
    • Yang JiaoYiping ChenWen-Chung Chen
    • Yang JiaoYiping ChenWen-Chung Chen
    • G06F12/00
    • G06F12/0859
    • The present disclosure relates to caches that are capable of improving processor performance. In some embodiments, among others, a cache request is received, and logic within the cache determines whether the received cache request results in a hit on the cache. If the cache request results in a hit on the cache, then that cache request is serviced. Conversely, if the cache request does not result in a hit (e.g., miss, miss-on-miss, hit-on-miss, etc.), then information related to the received cache request is stored in a missed request table. For some embodiments, missed read requests are stored in a missed read request table, while missed write requests are stored in a missed write request table.
    • 本公开涉及能够提高处理器性能的高速缓存。 在一些实施例中,其中包括缓存请求被接收,高速缓存内的逻辑确定所接收的高速缓存请求是否导致高速缓存的命中。 如果缓存请求导致高速缓存中的命中,则该缓存请求被服务。 相反,如果缓存请求不导致命中(例如,未命中,未命中,命中等等),则与所接收的高速缓存请求相关的信息被存储在错过的请求表中。 对于一些实施例,错过的读取请求被存储在错过的读取请求表中,而错过的写入请求被存储在错过的写入请求表中。