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1. 发明授权

US08361560B2 Immersion platinum plating solution 失效
标题翻译：浸镀铂溶液
公开(公告)号：US08361560B2
公开(公告)日：2013-01-29
申请号：US13587774
申请日：2012-08-16
申请人： Robin Cheung , Wen Zhong Kong
发明人： Robin Cheung , Wen Zhong Kong
IPC分类号： B05D1/02 , B05D1/18 , C23C18/42 , B32B15/01
CPC分类号： C23C18/54 , B32B15/018 , Y10T428/12875
摘要： A platinum plating solution for immersion plating a continuous film of platinum on a metal structure. The immersion platinum plating solution is free of a reducing agent. The plating process does not require electricity (e.g., electrical current) and does not require electrodes (e.g., anode and/or cathode). The solution includes a platinum source and a complexing agent including Oxalic Acid. The solution enables immersion plating of platinum onto a metal surface, a metal substrate, or a structure of which at least a portion is a metal. The resulting platinum plating comprises a continuous thin film layer of platinum having a thickness not exceeding 300 Å. The solution can be used for plating articles including but not limited to jewelry, medical devices, electronic structures, microelectronics structures, MEMS structures, nano-sized or smaller structures, structures used for chemical and/or catalytic reactions (e.g., catalytic converters), and irregularly shaped metal surfaces.
摘要翻译：一种用于在金属结构上浸镀铂金的铂电镀溶液。浸渍铂电镀溶液不含还原剂。电镀工艺不需要电（例如电流），并且不需要电极（例如阳极和/或阴极）。该溶液包括铂源和包括草酸的络合剂。该解决方案能够将铂浸入金属表面，金属基材或其至少一部分是金属的结构。所得的铂镀层包括厚度不超过300埃的连续的铂薄膜层。该溶液可用于包括但不限于珠宝，医疗装置，电子结构，微电子结构，MEMS结构，纳米尺寸或更小结构，用于化学和/或催化反应的结构（例如，催化转化器））的电镀制品，和不规则形状的金属表面。

2. 发明申请

US20120315503A1 IMMERSION PLATINUM PLATING SOLUTION 失效
标题翻译：浸入式铂金溶液
公开(公告)号：US20120315503A1
公开(公告)日：2012-12-13
申请号：US13587774
申请日：2012-08-16
申请人： Robin Cheung , Wen Zhong Kong
发明人： Robin Cheung , Wen Zhong Kong
IPC分类号： B05D1/18 , B01J23/42 , B05D1/02 , B32B15/01
CPC分类号： C23C18/54 , B32B15/018 , Y10T428/12875
摘要： A platinum plating solution for immersion plating a continuous film of platinum on a metal structure. The immersion platinum plating solution is free of a reducing agent. The plating process does not require electricity (e.g., electrical current) and does not require electrodes (e.g., anode and/or cathode). The solution includes a platinum source and a complexing agent including Oxalic Acid. The solution enables immersion plating of platinum onto a metal surface, a metal substrate, or a structure of which at least a portion is a metal. The resulting platinum plating comprises a continuous thin film layer of platinum having a thickness not exceeding 300 Å. The solution can be used for plating articles including but not limited to jewelry, medical devices, electronic structures, microelectronics structures, MEMS structures, nano-sized or smaller structures, structures used for chemical and/or catalytic reactions (e.g., catalytic converters), and irregularly shaped metal surfaces.
摘要翻译：一种用于在金属结构上浸镀铂金的铂电镀溶液。浸渍铂电镀溶液不含还原剂。电镀工艺不需要电（例如电流），并且不需要电极（例如阳极和/或阴极）。该溶液包括铂源和包括草酸的络合剂。该解决方案能够将铂浸入金属表面，金属基材或其至少一部分是金属的结构。所得的铂镀层包括厚度不超过300埃的连续的铂薄膜层。该溶液可用于包括但不限于珠宝，医疗装置，电子结构，微电子结构，MEMS结构，纳米尺寸或更小结构，用于化学和/或催化反应的结构（例如，催化转化器））的电镀制品，和不规则形状的金属表面。

3. 发明申请

US20110229734A1 Immersion platinum plating solution 失效
标题翻译：浸镀铂溶液
公开(公告)号：US20110229734A1
公开(公告)日：2011-09-22
申请号：US12661678
申请日：2010-03-22
申请人： Robin Cheung , Wen Zhong Kong
发明人： Robin Cheung , Wen Zhong Kong
IPC分类号： B32B15/01 , B05D1/18 , C23C18/42
CPC分类号： C23C18/54 , B32B15/018 , Y10T428/12875
摘要： A platinum plating solution for immersion plating a continuous film of platinum on a metal structure. The immersion platinum plating solution is free of a reducing agent. The plating process does not require electricity (e.g., electrical current) and does not require electrodes (e.g., anode and/or cathode). The solution includes a platinum source and a complexing agent including Oxalic Acid. The solution enables immersion plating of platinum onto a metal surface, a metal substrate, or a structure of which at least a portion is a metal. The resulting platinum plating comprises a continuous thin film layer of platinum having a thickness not exceeding 300 Å. The solution can be used for plating articles including but not limited to jewelry, medical devices, electronic structures, microelectronics structures, MEMS structures, nano-sized or smaller structures, structures used for chemical and/or catalytic reactions (e.g., catalytic converters), and irregularly shaped metal surfaces.
摘要翻译：一种用于在金属结构上浸镀铂金的铂电镀溶液。浸渍铂电镀溶液不含还原剂。电镀工艺不需要电（例如电流），并且不需要电极（例如阳极和/或阴极）。该溶液包括铂源和包括草酸的络合剂。该解决方案能够将铂浸入金属表面，金属基材或其至少一部分是金属的结构。所得的铂镀层包括厚度不超过300埃的连续的铂薄膜层。该溶液可用于包括但不限于珠宝，医疗装置，电子结构，微电子结构，MEMS结构，纳米尺寸或更小结构，用于化学和/或催化反应的结构（例如，催化转化器））的电镀制品，和不规则形状的金属表面。

4. 发明授权

US06873039B2 Methods of making microelectronic packages including electrically and/or thermally conductive element 有权
标题翻译：制造包括电和/或导热元件的微电子封装的方法
公开(公告)号：US06873039B2
公开(公告)日：2005-03-29
申请号：US10607289
申请日：2003-06-26
申请人： Masud Beroz , Bob Wen Zhong Kong , Michael Warner
发明人： Masud Beroz , Bob Wen Zhong Kong , Michael Warner
IPC分类号： H01L21/56 , H01L21/68 , H01L23/13 , H01L23/24 , H01L23/31 , H01L23/367 , H01L23/433 , H01L23/492 , H01L23/498 , H01L23/552
CPC分类号： H01L21/561 , H01L21/565 , H01L21/6835 , H01L23/13 , H01L23/24 , H01L23/3114 , H01L23/3128 , H01L23/3675 , H01L23/4334 , H01L23/492 , H01L23/49816 , H01L23/4985 , H01L23/552 , H01L24/26 , H01L24/48 , H01L24/83 , H01L24/97 , H01L2224/05599 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/73153 , H01L2224/8319 , H01L2224/83801 , H01L2224/85399 , H01L2224/97 , H01L2225/0651 , H01L2225/0652 , H01L2225/06582 , H01L2225/06589 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/16152 , H01L2924/181 , H01L2924/3025 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A method of manufacturing a plurality of microelectronic packages including electrically and/or thermally conductive elements. The method includes providing a support structure having a plurality of protrusions and depressions extending outwardly from the support. A conductive element is then mated to the support structure in a male-to-female relationship. The depressions formed in the support structure and conductive element are used to house a microelectronic element such as a semiconductor chip. A substrate is provided so as to cover substantially each depression located in the conductive element. Leads interconnect contacts to the chip to terminals on the substrate. A curable encapsulant material may be deposited into the depression so as to protect and support the leads and the microelectronic element. Additionally, the curable encapsulant material forms part of the exterior of a single resulting chip package once the assembly is diced and cut into individual packages.
摘要翻译：一种制造包括电和/或导热元件的多个微电子封装件的方法。该方法包括提供具有从支撑体向外延伸的多个突起和凹陷的支撑结构。然后将导电元件以男性与女性的关系配合到支撑结构。在支撑结构和导电元件中形成的凹陷用于容纳诸如半导体芯片的微电子元件。提供基板以便基本上覆盖位于导电元件中的每个凹部。引线将接触芯片连接到基板上的端子。可固化的密封剂材料可以沉积到凹陷中，以保护和支撑引线和微电子元件。此外，一旦组装被切割并切割成单独的包装，可固化的密封剂材料形成单个所得的芯片封装的外部的一部分。

5. 发明授权

US08317910B2 Immersion platinum plating solution 失效
标题翻译：浸镀铂溶液
公开(公告)号：US08317910B2
公开(公告)日：2012-11-27
申请号：US12661678
申请日：2010-03-22
申请人： Robin Cheung , Wen Zhong Kong
发明人： Robin Cheung , Wen Zhong Kong
IPC分类号： C23C18/42
CPC分类号： C23C18/54 , B32B15/018 , Y10T428/12875
摘要： A platinum plating solution for immersion plating a continuous film of platinum on a metal structure. The immersion platinum plating solution is free of a reducing agent. The plating process does not require electricity (e.g., electrical current) and does not require electrodes (e.g., anode and/or cathode). The solution includes a platinum source and a complexing agent including Oxalic Acid. The solution enables immersion plating of platinum onto a metal surface, a metal substrate, or a structure of which at least a portion is a metal. The resulting platinum plating comprises a continuous thin film layer of platinum having a thickness not exceeding 300 Å. The solution can be used for plating articles including but not limited to jewelry, medical devices, electronic structures, microelectronics structures, MEMS structures, nano-sized or smaller structures, structures used for chemical and/or catalytic reactions (e.g., catalytic converters), and irregularly shaped metal surfaces.
摘要翻译：一种用于在金属结构上浸镀铂金的铂电镀溶液。浸渍铂电镀溶液不含还原剂。电镀工艺不需要电（例如电流），并且不需要电极（例如阳极和/或阴极）。该溶液包括铂源和包括草酸的络合剂。该解决方案能够将铂浸入金属表面，金属基材或其至少一部分是金属的结构。所得的铂镀层包括厚度不超过300埃的连续的铂薄膜层。该溶液可用于包括但不限于珠宝，医疗装置，电子结构，微电子结构，MEMS结构，纳米尺寸或更小结构，用于化学和/或催化反应的结构（例如，催化转化器））的电镀制品，和不规则形状的金属表面。

6. 发明申请

US20120012897A1 Vertically Fabricated BEOL Non-Volatile Two-Terminal Cross-Trench Memory Array with Two-Terminal Memory Elements and Method of Fabricating the Same 审中-公开
标题翻译：具有双端存储器元件的垂直制造的BEOL非易失性双端口交叉沟槽存储器阵列及其制造方法
公开(公告)号：US20120012897A1
公开(公告)日：2012-01-19
申请号：US13185410
申请日：2011-07-18
申请人： PAUL BESSER , ROBIN CHEUNG , WEN ZHONG KONG
发明人： PAUL BESSER , ROBIN CHEUNG , WEN ZHONG KONG
IPC分类号： H01L23/52
CPC分类号： H01L27/101 , H01L27/2472 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/147
摘要： A non-Flash non-volatile cross-trench memory array formed using an array of trenches formed back-end-of-the-line (BEOL) over a front-end-of-the-line (FEOL) substrate includes two-terminal memory elements operative to store at least one bit of data that are formed at a cross-point of a first trench and a second trench. The first and second trenches are arranged orthogonally to each other. At least one layer of memory comprises a plurality of the first and second trenches to form a plurality of memory elements. The non-volatile memory can be used to replace or emulate other memory types including but not limited to embedded memory, DRAM, SRAM, ROM, and FLASH. The memory is randomly addressable down to the bit level and erase or block erase operation prior to a write operation are not required.
摘要翻译：使用在前端（FEOL）衬底上形成的后端（BEOL）形成的沟槽阵列形成的非闪存非易失性交叉沟槽存储器阵列包括两端存储元件可操作地存储形成在第一沟槽和第二沟槽的交叉点处的至少一个数据位。第一和第二沟槽彼此正交配置。至少一层存储器包括多个第一和第二沟槽以形成多个存储元件。非易失性存储器可用于替换或模拟其它存储器类型，包括但不限于嵌入式存储器，DRAM，SRAM，ROM和FLASH。存储器可以随机寻址到位电平，并且不需要在写操作之前擦除或擦除擦除操作。

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